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1. 发明授权

US4584668A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4584668A
公开(公告)日：1986-04-22
申请号：US603450
申请日：1984-04-24
申请人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
发明人： Teruaki Takeuchi , Ryo Suzuki , Naoki Kodama , Masatoshi Takeshita , Tadashi Ikeda , Toshihiro Sato , Yutaka Sugita
IPC分类号： G11C19/08
CPC分类号： G11C19/08 , G11C19/0891
摘要： A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.
摘要翻译：磁性气泡存储器件具有两种类型的气泡传播轨迹。通过将离子注入到磁性层中形成一种类型的气泡传播轨迹。另一种由软磁性材料，例如坡莫合金形成。至少软磁性材料所在的区域的厚度比其他区域的厚度小。

2. 发明授权

US4621344A Magnetic bubble device 失效
标题翻译：磁性气泡装置
公开(公告)号：US4621344A
公开(公告)日：1986-11-04
申请号：US669427
申请日：1984-11-08
申请人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Teruaki Takeuchi , Yutaka Sugita
发明人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Teruaki Takeuchi , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0816
摘要： A magnetic bubble device has minor loops formed through ion implantation and used for storing information. As the density becomes higher, inside turn corner portions are formed on the minor loops. Dummy patterns having circular, triangular or other shapes are disposed in the vicinity of the corner portion. It is desirable that the minimum distance X between the dummy pattern and the propagation track satisfy the relation of 1.5 D.ltoreq.X.ltoreq.3.5 D, where D represents the diameter of a bubble.
摘要翻译：磁性气泡装置具有通过离子注入形成的较小的环，用于存储信息。随着密度变高，在小环上形成内转角部。具有圆形，三角形或其他形状的虚拟图案设置在角部附近。期望虚拟图案和传播轨迹之间的最小距离X满足1.5D≤X≤3.5D的关系，其中D表示气泡的直径。

3. 发明授权

US4744051A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4744051A
公开(公告)日：1988-05-10
申请号：US752587
申请日：1985-07-08
申请人： Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
发明人： Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
IPC分类号： G11C19/08
CPC分类号： G11C19/0883
摘要： A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.
摘要翻译：用于实现其实际使用的高存储密度的磁气泡存储装置通常由占据小环的大部分的离子注入元件和由软磁材料制成的其它元件组成。具有较高密度的离子注入次环被折叠多次，并且包括彼此相邻并通过内部转弯连接的直线传播轨迹，而具有面向内侧转弯的外侧转弯的另一条直线传播轨道被放置在相邻直线轨道

4. 发明授权

US4769783A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4769783A
公开(公告)日：1988-09-06
申请号：US804164
申请日：1985-12-03
申请人： Toshihiro Sato , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Tadashi Ikeda , Ryo Suzuki
发明人： Toshihiro Sato , Takashi Toyooka , Teruaki Takeuchi , Masatoshi Takeshita , Naoki Kodama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C19/08
CPC分类号： G11C19/0875
摘要： In a magnetic bubble memory device employing ion-implanted tracks as minor loops for data storage, there is proposed a magnetic bubble memory element employing a minor loop having a folded structure and a turn composed of three tips formed convexly toward an ion-implanted area and two cusps as an inside turn for accomplishing the folding with a center as the ion-implanted area. In this inside turn, the line connecting between the two cusps of the turn includes a gradient in the range of 90 degrees to 120 degrees in relation to the ion-implanted straight line tracks.
摘要翻译：在采用离子注入轨迹作为用于数据存储的小环路的磁性气泡存储装置中，提出了一种使用具有折叠结构的小环的磁性气泡存储元件，并且由三个尖端组成的转弯，凸起地形成离子注入区域，作为内部转弯的两个尖端，用于实现具有中心的折叠作为离子注入区域。在这个内部转弯中，连接两个转弯之间的线相对于离子注入的直线轨迹包括在90度至120度范围内的梯度。

5. 发明授权

US4559617A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4559617A
公开(公告)日：1985-12-17
申请号：US635169
申请日：1984-07-27
申请人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Masatoshi Takeshita , Yutaka Sugita
发明人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Masatoshi Takeshita , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08 , H01F41/34
CPC分类号： G11C19/0816 , H01F41/34
摘要： A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.
摘要翻译：高密度磁气泡存储装置包括通过离子注入形成的第一磁气体传播路径和由软磁材料形成的第二磁气泡传播路径。深入离子注入用于实现第二磁性气泡传播轨迹的区域。相邻的软磁性材料膜之间的间隙也被深度离子注入。第二个磁性气泡传播轨迹可以是浅离子注入的，也可以不用离子注入。

6. 发明授权

US4837741A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4837741A
公开(公告)日：1989-06-06
申请号：US46170
申请日：1987-05-05
申请人： Toshihiro Sato , Takashi Toyooka , Naoki Kodama , Teruaki Takeuchi , Masatoshi Takeshita , Ryo Suzuki
发明人： Toshihiro Sato , Takashi Toyooka , Naoki Kodama , Teruaki Takeuchi , Masatoshi Takeshita , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0883
摘要： In a magnetic bubble memory device in which a major line and minor loops are constituted by ion-implanted tracks, a gate is constituted having two functions, i.e., having a replicate function and a pseudo swap function using conductor patterns of two layers that overlap on both the major line and on the minor loops. By controlling the pulsed current supplied to the conductor patterns of the two layers, the replicate function divides the bubble in the minor loop into two bubbles, so that one of the bubbles is taken onto the major line and is propagated to the detector. The pseudo swap function annihilates the bubble in the minor loop, divides the bubble on the major line into two bubbles and introduces one of them into the minor loop, thereby to realize the same function as that of the conventional swap gate.
摘要翻译：在其中通过离子注入轨迹构成主线和次级环的磁性气泡存储装置中，构成具有两个功能的门，即具有复制功能和使用两层重叠的导体图案的伪交换功能主要线路和次要线路。通过控制提供给两层导体图案的脉冲电流，复制功能将次环中的气泡分成两个气泡，使得一个气泡被带到主线上并被传播到检测器。伪交换功能消除了小循环中的气泡，将主线上的气泡划分为两个气泡，并将其中的一个引入次循环，从而实现与常规交换门相同的功能。

7. 发明授权

US5014239A Magnetic bubble generator using plural conductors with common current source 失效
标题翻译：使用具有共同电流源的多个导体的磁性气泡发生器
公开(公告)号：US5014239A
公开(公告)日：1991-05-07
申请号：US308081
申请日：1989-02-09
申请人： Masatoshi Takeshita , Toshihiro Sato , Takashi Toyooka , Ryo Suzuki
发明人： Masatoshi Takeshita , Toshihiro Sato , Takashi Toyooka , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： In a magnetic bubble generator having an ion-implanted track (1), a conductor pattern is composed of hairpin conductor patterns (5, 6) of two layers with an insulating layer (12) interlaid, and a part of intersection of the fore end parts of the gaps of these hairpin conductor patterns (5,6) is positioned in the vicinity of a cusp (4) of the ion-implanted track (1). The hairpin conductors may be electrically connected to each other and may be supplied by a common source. Thereby an error to be caused by a generated bubble stretching so much as to be divided into a plurality of pieces can be prevented, and the bubble can be generated by a small current pulse, while the amplitude margin thereof is enlarged.
摘要翻译：在具有离子注入轨道（1）的磁性气泡发生器中，导体图案由两层的发夹导体图案（5,6）组成，其中包含绝缘层（12），并且前端的一部分交叉这些发夹导体图案（5,6）的间隙的一部分位于离子注入轨道（1）的尖点（4）附近。发夹导体可以彼此电连接并且可以由公共源提供。因此，可以防止由产生的气泡拉伸而被分成多个部分引起的误差，并且可以通过小的电流脉冲产生气泡，同时其幅度裕度被扩大。

8. 发明授权

US08292992B2 Flue gas desulfurization apparatus 有权
标题翻译：烟气脱硫装置
公开(公告)号：US08292992B2
公开(公告)日：2012-10-23
申请号：US12021666
申请日：2008-01-29
申请人： Toshihiro Sato , Manabu Oda , Koichiro Iwashita , Eiji Ochi , Susumu Okino , Takeo Shinoda , Tetsu Ushiku
发明人： Toshihiro Sato , Manabu Oda , Koichiro Iwashita , Eiji Ochi , Susumu Okino , Takeo Shinoda , Tetsu Ushiku
IPC分类号： B01D47/00
CPC分类号： B01D53/18 , B01D45/08 , B01D53/504 , B01D2257/302
摘要： A flue gas desulfurization apparatus includes an absorption tower that absorbs sulfur oxide in a flue gas, and drift suppression members that are arranged near a bend portion of a purified gas exhaust passage arranged at an outlet portion of the absorption tower, the drift suppression members serving to collect mist particles.
摘要翻译：烟道气脱硫装置包括：吸收烟道气中的硫氧化物的吸收塔;配置在吸收塔出口部的净化气体排出通道的弯曲部附近的漂移抑制部件，收集雾粒。

9. 发明授权

US08274218B1 Light emitting display 有权
标题翻译：发光显示
公开(公告)号：US08274218B1
公开(公告)日：2012-09-25
申请号：US13472863
申请日：2012-05-16
申请人： Masaya Adachi , Toshihiro Sato , Naoki Tokuda
发明人： Masaya Adachi , Toshihiro Sato , Naoki Tokuda
IPC分类号： H01J1/62
CPC分类号： H01L51/5262 , H01L27/3211 , H01L27/3244 , H01L27/3248 , H01L2251/5315 , H01L2251/558
摘要： A color light emitting display includes light-emitting devices constituting a plurality of red, green and blue pixels disposed in a matrix form on a substrate, said light-emitting display takes out light from a side of said light-emitting devices opposite to said substrate on which said light-emitting devices are formed, and wherein when a wavelength of the light having an interference intensity of which with respect to the light emitted from an emissive layer constituting said light-emitting device becomes a maximum value at 0 degree of a viewing angle is λimax, and a wavelength of the light becomes a maximum in a light intensity of the light emitted from said emissive layer is λemax, a relationship of λemax−50 nm≦λimax
摘要翻译：彩色发光显示器包括构成以矩阵形式设置在基板上的多个红色，绿色和蓝色像素的发光器件，所述发光显示器从与所述基板相对的所述发光元件的一侧取出光其上形成有所述发光装置，并且其中当相对于构成所述发光装置的发光层发射的光的干涉强度的光的波长在0度时成为最大值角度为λimax，并且从所述发射层发射的光的光强度中的光的波长变为最大值为λemax，满足λemax-50nm＆lt; lE;λimax<λemax的关系。

10. 发明申请

US20120168970A1 SPACER FORMATION FILM, METHOD OF MANUFACTURING SEMICONDUCTOR WAFER BONDING PRODUCT, SEMICONDUCTOR WAFER BONDING PRODUCT AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：隔膜形成膜，制造半导体波形粘结产品的方法，半导体波形粘结产品和半导体器件
公开(公告)号：US20120168970A1
公开(公告)日：2012-07-05
申请号：US13496354
申请日：2010-09-13
申请人： Toshihiro Sato , Masakazu Kawata , Masahiro Yoneyama , Toyosei Takahashi , Hirohisa Dejima , Fumihiro Shiraishi
发明人： Toshihiro Sato , Masakazu Kawata , Masahiro Yoneyama , Toyosei Takahashi , Hirohisa Dejima , Fumihiro Shiraishi
IPC分类号： H01L23/544 , H01L23/12 , B32B7/02 , H01L21/50
CPC分类号： H01L24/29 , H01L24/13 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29386 , H01L2224/29388 , H01L2224/83 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01033 , H01L2924/01052 , H01L2924/01059 , H01L2924/01074 , H01L2924/014 , H01L2924/0665 , H01L2924/15788 , H01L2924/181 , Y10T428/2495 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05432 , H01L2924/00014 , H01L2924/05442 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： A method of manufacturing a semiconductor wafer bonding product according to the present invention includes: a step of preparing a spacer formation film including a support base having a sheet-like shape and a spacer formation layer provided on the support base and having photosensitivity; a step of attaching the spacer formation layer to a semiconductor wafer having one surface from a side of the one surface; a step of forming a spacer by subjecting exposure and development to the spacer formation layer to be patterned and removing the support base; a step of bonding a transparent substrate to a region of the spacer, with which the removed support base made contact, so as to be included within the region. This makes it possible to manufacture a semiconductor wafer bonding product in which the semiconductor wafer and the transparent substrate are bonded together through the spacer uniformly and reliably.
摘要翻译：根据本发明的制造半导体晶片接合产品的方法包括：制备包括具有片状形状的支撑基底和设置在支撑基底上并具有光敏性的间隔物形成层的间隔物形成膜的步骤; 将间隔物形成层从一个表面的一侧附着到具有一个表面的半导体晶片的步骤; 通过对间隔物形成层进行曝光和显影以形成图案化并去除支撑基底来形成间隔物的步骤; 将透明基板粘合到被移除的支撑基底与之接触的间隔件的区域中以便包括在该区域内的步骤。这使得可以制造半导体晶片接合产品，其中半导体晶片和透明基板通过间隔件均匀可靠地结合在一起。

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