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1. 发明授权

US4845671A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4845671A
公开(公告)日：1989-07-04
申请号：US225318
申请日：1988-07-28
申请人： Youji Maruyama , Tadashi Ikeda , Teruaki Takeuchi , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Teruaki Takeuchi , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.
摘要翻译：一种布洛赫线存储器件和一种擦除信息的方法，其中为了擦除代表一比特信息并位于一个条带域的一个端部中的布洛赫线对，条带域通过降低偏置强度而被拉伸将具有与被擦除的布洛赫线对相反的磁化旋转的擦除布洛赫线对通过将电流脉冲信号提供给布置在基本上延伸的导体上而被注入延伸条带域的端部，通过恢复偏置磁场的强度，条状域的长度方向和拉伸的条状域被收缩，使得被擦除的Bloch线对与擦除布洛赫线对组合以取消前者。

2. 发明授权

US4831584A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4831584A
公开(公告)日：1989-05-16
申请号：US76215
申请日：1987-07-22
申请人： Youji Maruyama , Ryo Suzuki
发明人： Youji Maruyama , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device in which a stripe magnetic domain is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current is caused to flow through a single conductor which is so disposed as to cross the magnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain.

3. 发明授权

US5050122A Bloch line memory device and method for operating same 失效
标题翻译： Bloch线存储器件及其操作方法
公开(公告)号：US5050122A
公开(公告)日：1991-09-17
申请号：US16656
申请日：1987-02-19
申请人： Youji Maruyama , Ryo Suzuki
发明人： Youji Maruyama , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0883 , G11C19/0858 , G11C19/0866
摘要： There are disclosed techniques concerning reading out Bloch lines in a Bloch line memory device, where pairs of Bloch lines are used as an information carrier. The pairs of Bloch lines are transferred to the head portion of a stripe magnetic domain and an inplane magnetic field is applied at the proximity of the head portion of the stripe magnetic domain so that the pairs of Bloch lines are split. In this way only one of the Bloch lines can exist stably at the head portion of the stripe magnetic domain. Then the Bloch lines are transformed into a magnetic bubble domain by making electric current to flow through a hair-pin shaped conductor disposed at the proximity of the head portion of the stripe magnetic domain. This magnetic bubble domain is detected by a magnetic bubble detector.
摘要翻译：公开了在Bloch线存储器件中读出Bloch线的技术，其中使用Bloch线对作为信息载体。将布洛赫线对转移到条形磁畴的头部，并且在条形磁畴的头部附近施加内平面磁场，使得布洛赫线对被分开。以这种方式，只有布洛赫线之一可以稳定地存在于条状磁畴的头部。然后，通过使电流流过布置在条形磁畴的头部附近的发针形导体，将Bloch线转换成磁性气泡区域。该磁性气泡区域由磁性气泡检测器检测。

4. 发明授权

US5047978A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US5047978A
公开(公告)日：1991-09-10
申请号：US362646
申请日：1989-06-07
申请人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866 , G11C19/0858
摘要： A Bloch line read/write memory in which a Bloch line or lines near the end portion of a stripe domain are moved in a predetermined direction to turn the direction of a wall magnetization at the end portion to a right turn direction as viewed form the surface of a film on which a bubble chopping conductor is disposed, and thereby reduce erroneous reading errors and increase the chopping current margin.
摘要翻译：布洛赫线读/写存储器，其中在条纹域的端部附近的布洛赫线或线沿预定方向移动，以将端部处的壁磁化方向转动到从表面观察的右转方向设置有气泡斩波导体的膜，从而减少错误读取误差并增加斩波电流裕度。

5. 发明授权

US4949304A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4949304A
公开(公告)日：1990-08-14
申请号：US241731
申请日：1988-09-08
申请人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0866
摘要： In a Bloch line memory device, information corresponds to the presence or absence of a Bloch line pair present in the magnetic wall of a stripe magnetic domain. Reading of information is effected by converting the presence and absence of a Bloch line pair into the presence and absence of a magnetic bubble domain. The conversion is effected such that, after the stripe magnetic domain has been shrunk in such a manner that no Bloch line is present therein, a magnetic field for chopping off the stripe magnetic domain is applied to the shrunken portion. Thus, when a Bloch line is present at an end portion of the stripe magnetic domain, the stripe magnetic domain is chopped off to form a magnetic bubble domain, whereas, when no Bloch line is present at the end portion of the stripe magnetic domain, the stripe magnetic domain is not chopped off and therefore no magnetic bubble domain is formed. Whether the magnetic bubble domain is present or absent is processed as information.
摘要翻译：在布洛克线存储器件中，信息对应于存在于条状磁畴的磁壁中的Bloch线对的存在或不存在。信息的读取通过将Bloch线对的存在和不存在转换为存在和不存在磁性气泡域来实现。进行转换，使得在条形磁畴已经以不存在布洛赫线的方式收缩之后，将用于切断条形磁畴的磁场施加到缩小部分。因此，当在条形磁畴的端部存在布洛赫线时，条状磁畴被切断以形成磁性气泡畴，而当在条状磁畴的端部没有布洛赫线时，条纹磁畴不会被切断，因此不会形成磁性气泡畴。是否存在或不存在磁泡区域作为信息被处理。

6. 发明授权

US08987737B2 Polycrystalline silicon wafer 有权
标题翻译：多晶硅片
公开(公告)号：US08987737B2
公开(公告)日：2015-03-24
申请号：US14003388
申请日：2012-03-08
申请人： Hiroshi Takamura , Ryo Suzuki
发明人： Hiroshi Takamura , Ryo Suzuki
IPC分类号： H01L29/04 , C01B33/037 , C30B28/06 , C30B29/06 , H01L31/18 , C30B11/00 , H01L21/02
CPC分类号： H01L29/04 , C01B33/037 , C30B11/00 , C30B28/06 , C30B29/06 , H01L21/02381 , H01L21/02433 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.
摘要翻译：提供了一种通过熔融和单向凝固方法制造的多晶硅晶片，其中多晶硅晶片的直径为450mm以上，厚度为900μm以上，平均晶粒尺寸为5〜50mm，由一件组成。本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片，其中：机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向，抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

7. 发明申请

US20140194353A1 COMPOSITIONS AND METHODS FOR THE TREATMENT OF NERVOUS DISORDERS ASSOCIATED WITH DIABETES 审中-公开
标题翻译：用于治疗与糖尿病有关的神经疾病的组合物和方法
公开(公告)号：US20140194353A1
公开(公告)日：2014-07-10
申请号：US13990523
申请日：2011-11-29
申请人： C. Ronald Kahn , Ryo Suzuki
发明人： C. Ronald Kahn , Ryo Suzuki
IPC分类号： A61K38/28 , G01N33/53
CPC分类号： A61K38/28 , G01N33/53
摘要： Compositions and methods for treating neural dysfunction. A exemplary method comprises administering to a subject having a neuropathy, e.g., a cognitive dysfunction or Alzheimer's, a therapeutically effective amount of an insulin or insulin analog, wherein the insulin or insulin analog crosses the BBB and/or a compound that increases SREBP-2 expression or activity in the CNS of the subject.
摘要翻译：治疗神经功能障碍的组合物和方法。一种示例性方法包括对具有神经病，例如认知功能障碍或阿尔茨海默病的受试者施用治疗有效量的胰岛素或胰岛素类似物，其中胰岛素或胰岛素类似物穿过BBB和/或增加SREBP-2的化合物表达或活动在CNS的主题。

8. 发明授权

US08512868B2 Hybrid silicon wafer 有权
标题翻译：混合硅片
公开(公告)号：US08512868B2
公开(公告)日：2013-08-20
申请号：US13499304
申请日：2010-10-28
申请人： Ryo Suzuki , Hiroshi Takamura
发明人： Ryo Suzuki , Hiroshi Takamura
IPC分类号： B32B9/04 , B32B13/04 , C01B33/02
CPC分类号： C30B29/06 , C30B11/00 , C30B28/06 , C30B33/06
摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims 1 to 6, wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.
摘要翻译：具有以下结构的硅晶片的混合硅晶片，其中通过单向凝固/熔融法制备的多晶硅的主平面取向为（311），单晶硅嵌入多晶硅中。 7.根据权利要求1〜6中任一项所述的复合硅晶片，其特征在于，除了气体成分以外的多晶硅部分的纯度为6N以上，金属杂质的总量为1重量ppm以下，在金属杂质中，Cu ，Fe，Ni，Al分别为0.1重量ppm以下。因此，提供了具有多晶硅晶片和单晶硅晶片的功能的混合硅晶片，并且防止了多晶硅和单晶硅之间的抛光凸起和宏观尺寸的不均匀性的出现。

9. 发明申请

US20130196820A1 VEHICLE ENGINE CONTROL DEVICE 有权
标题翻译：车用发动机控制装置
公开(公告)号：US20130196820A1
公开(公告)日：2013-08-01
申请号：US13818004
申请日：2010-08-20
申请人： Ryo Suzuki , Akiyoshi Negishi , Shinichi Takeuchi , Takeshi Kaino , Katsuya Kobayashi
发明人： Ryo Suzuki , Akiyoshi Negishi , Shinichi Takeuchi , Takeshi Kaino , Katsuya Kobayashi
IPC分类号： B60W10/02 , B60W10/06
CPC分类号： B60W10/02 , B60W10/06 , F02D29/02 , F02D41/022 , F02D41/123 , F02D2200/101 , F02D2200/602 , Y10T477/79
摘要： A vehicle engine control device stopping fuel injection if a predetermined fuel cut condition is satisfied, is provided, during running with the fuel injection stopped, when inertia of a power transmission system rotating with the engine has a smaller rate of inertia of the power transmission system acting on rotation of an output shaft of the engine, the fuel injection being started at a lower engine rotation speed as compared to the case of a larger rate of inertia of the power transmission system acting on rotation of the output shaft of the engine, a clutch capable of connecting and interrupting power transmission between the engine and the power transmission system being interposed between the engine and the power transmission system, a rate of inertia of the power transmission system acting on rotation of the output shaft of the engine being configured to decrease as a clutch stroke of the clutch that is an operation amount of a clutch pedal increases, and an engine rotation speed for starting the fuel injection being set to a lower value as the clutch stroke increases.
摘要翻译：在满足规定的燃料切断条件的情况下，设置停止燃料喷射的车辆发动机控制装置，在停止燃料的行驶中，当与发动机一起旋转的动力传递系统的惯性具有较小的动力传递系统的惯量作用于发动机的输出轴的旋转，与作为发动机的输出轴的旋转的动力传递系统的较大惯量的情况相比，燃料喷射以较低的发动机转速开始，能够连接和中断发动机和动力传递系统之间的动力传递的离合器插入在发动机和动力传动系统之间，作用在发动机的输出轴的旋转上的动力传动系统的惯性率被配置为减小作为离合器的作为离合器踏板的操作量的离合器行程增加，并且发动机旋转 d随着离合器行程的增加而将燃油喷射设定为较低的值。

10. 发明授权

US08118984B2 Sintered sputtering target made of refractory metals 有权
$Sintered sputtering target made of refractory metals$
标题翻译：由难熔金属制成的烧结溅射靶
公开(公告)号：US08118984B2
公开(公告)日：2012-02-21
申请号：US12279067
申请日：2007-02-22
申请人： Ryo Suzuki
发明人： Ryo Suzuki
IPC分类号： C23C14/00 , C25B11/00 , C25B13/00
CPC分类号： C23C14/3414 , C22C1/0466 , C22C5/04 , C22C27/00 , C22C27/02 , C22C27/04 , C22C30/00
摘要： Proposed is a sintered sputtering target containing two or more types of refractory metals. In particular, proposed is a sintered sputtering target of refractory metals that is able to improve the target structure to prevent the dropout of metal particles other than the matrix-forming major component, improve the deposition quality as well as the workability of the target by reducing impurities such as gas components, enhancing the density and eliminating the generation of arcing and particles in sputtering. This sintered sputtering target of refractory metals is composed of one or more types of minor components selected from W, Ta and Hf at less than 50 at % as well as at least one or more major components selected from Ru, Rh and Ir and inevitable impurities as the remainder. The metal structure of the major component comprises a granular minor component metal phase, or an alloy phase or a compound phase of the major and the minor component having an average grain size of 100 μm to 500 μm.
摘要翻译：提出的是含有两种以上难熔金属的烧结溅射靶。特别地，提出了一种难熔金属的烧结溅射靶，其能够改善目标结构以防止除基体形成主要成分之外的金属颗粒的脱落，通过减少来提高沉积质量以及靶的可加工性诸如气体组分的杂质，增强了密度并消除了溅射中电弧和颗粒的产生。难熔金属的烧结溅射靶由小于50at％的选自W，Ta和Hf的一种或多种次要组分以及选自Ru，Rh和Ir中的至少一种或多种主要成分和不可避免的杂质构成作为剩余部分。主要成分的金属组织包括平均粒径为100μm〜500μm的粒状次成分金属相或主成分和次要成分的合金相或化合物相。

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