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    • 1. 发明授权
    • Method for preparing elongated-shaped silica sol
    • 制备细长形硅胶的方法
    • US5597512A
    • 1997-01-28
    • US323119
    • 1994-10-14
    • Yoshitane WatanabeYoshiyuki KashimaHiroyuki Takagi
    • Yoshitane WatanabeYoshiyuki KashimaHiroyuki Takagi
    • C01B33/148B01J13/00C01B33/141C01B33/151
    • C01B33/141B01J13/00
    • A method for preparing a silica sol having an elongated shape comprising a step (a) where an aqueous solution containing a water-soluble calcium salt or a water-soluble magnesium salt or a mixture of the water-soluble calcium salt or the water-soluble magnesium salt is mixed with an aqueous colloidal solution of an active silicic acid; a step (b) where an alkaline substance is mixed with the aqueous liquid obtained in the step (a); a step (c) where a part or the whole of the mixture obtained in the step (b) is heated at 60.degree. C. or higher to obtain a heel solution and a feed solution is prepared by a part of the mixture obtained in the step (b) or a mixture separately prepared by the step (b) and the feed solution is added to the heel solution; and a step where water is evaporated during said addition step so that SiO.sub.2 concentration is concentrated to 6 to 30% by weight.
    • 一种制备具有细长形状的硅溶胶的方法,包括步骤(a),其中含有水溶性钙盐或水溶性镁盐的水溶液或水溶性钙盐或水溶性钙盐的混合物 镁盐与活性硅酸的水性胶体溶液混合; 步骤(b)其中将碱性物质与步骤(a)中获得的水性液体混合; 步骤(c)将步骤(b)中获得的混合物的一部分或全部加热至60℃或更高以获得脚后跟溶液,并且通过在 将步骤(b)或通过步骤(b)分开制备的混合物和进料溶液加入到脚后跟溶液中; 以及在所述添加步骤中水蒸发的步骤,使SiO 2浓度浓缩至6〜30重量%。
    • 2. 发明授权
    • Polishing composition
    • 抛光组成
    • US06398827B1
    • 2002-06-04
    • US09605542
    • 2000-06-29
    • Isao OtaTohru NishimuraYoshitane WatanabeYoshiyuki KashimaKiyomi EmaYutaka Ohmori
    • Isao OtaTohru NishimuraYoshitane WatanabeYoshiyuki KashimaKiyomi EmaYutaka Ohmori
    • C09K314
    • C09K3/1463C09G1/02
    • The present invention relates to a polishing composition for polishing alumina disks, polishing substrates having silica surfaces and semiconductor wafers, comprising a stable aqueous silica sol containing moniliform colloidal silica particles having a ratio (D1/D2) of a particle diameter D1 nm (as measured by dynamic light scattering method) to a mean particle diameter D2 (as measured by nitrogen absorption method) of 3 or more, wherein D1 is between 50 to 800 nm and D2 is between 10 to 120 nm, said moniliform colloidal silica particles being composed of spherical colloidal silica particles and a metal oxide-containing silica bond which bonds these spherical colloidal silica particles together, wherein the spherical colloidal silica particles are linked together in rows in only one plane by observation through an electron microscope, and further wherein said polishing composition contains 0.5 to 50% by weight of said moniliform colloidal silica particles.
    • 本发明涉及一种用于抛光氧化铝盘的抛光组合物,具有二氧化硅表面的抛光衬底和半导体晶片,其包含稳定的含水二氧化硅溶胶,其含有粒径为D1nm(D1 / D2)的粒径为D1nm 通过动态光散射法)至平均粒径D2(通过氮吸收法测定)为3以上,其中D1为50〜800nm,D2为10〜120nm,所述观察胶体二氧化硅粒子为 球形胶体二氧化硅颗粒和将这些球形胶体二氧化硅颗粒结合在一起的含金属氧化物的二氧化硅结合体,其中通过电子显微镜观察,球形胶体二氧化硅颗粒在一个平面内以行排列在一起,并且其中所述抛光组合物含有 0.5〜50重量%的所述念珠状胶体二氧化硅粒子。
    • 3. 发明授权
    • Moniliform silica sol, process for producing the same, and ink-jet recording medium
    • 单晶硅溶胶,其制造方法和喷墨记录介质
    • US06632489B1
    • 2003-10-14
    • US09763965
    • 2001-02-28
    • Yoshitane WatanabeYoshiyuki KashimaKiyomi EmaYutaka Ohmori
    • Yoshitane WatanabeYoshiyuki KashimaKiyomi EmaYutaka Ohmori
    • B32B300
    • B41M5/5218B41M2205/12C01B33/1485
    • A stable silica sol having an SiO2 concentration of 1 to 50% by weight and containing liquid-medium dispersed moniliform colloidal silica particles each having 3 or more as a ratio of D1/D2 of a particle diameter (D1 nm) measured by a dynamic light scattering method to a mean particle diameter (a particle diameter measured by a nitrogen absorption method: D2 nm) where D1 is 50 to 500 nm, and which are comprised by spherical colloidal silica particles having a mean particle diameter of 10 to 80 nm and metal oxide-containing silica bonding these spherical-colloidal silica particles, and in which the spherical colloidal silica particles link in rows in only one plane, process for producing such and a coating composition for ink receiving layers containing such a silica sol and an ink jet recording medium.
    • 一种稳定的硅溶胶,其SiO 2浓度为1〜50重量%,含有液体介质分散的单状胶体二氧化硅粒子,其分别具有3个以上的D < 具有粒径(D 1 nm的HIL> 1 / D 2 )通过动态光散射法测量为平均粒径(通过氮吸收法测量的粒径:D 2 PDAT> nm)其中D 1 为50〜500nm,由平均粒径为10〜80nm的球形胶体二氧化硅粒子和与这些球状胶体二氧化硅粒子结合的含金属氧化物的二氧化硅粒子构成, 球形胶体二氧化硅颗粒仅在一个平面中成行排列,制备方法和用于含有这种二氧化硅溶胶和喷墨记录介质的油墨接收层的涂料组合物。
    • 5. 发明授权
    • Production of stable aqueous silica sol
    • 生产稳定的水性硅胶
    • US5196177A
    • 1993-03-23
    • US641709
    • 1991-01-15
    • Yoshitane WatanabeYoshiyuki KashimaKenji Tanimoto
    • Yoshitane WatanabeYoshiyuki KashimaKenji Tanimoto
    • C01B33/149
    • C01B33/149
    • A sol of flat silica particles (100-1000 nm in size) is produced by the following steps (a) to (d) from an acidic aqueous sol (S.sub.0) of negatively charged silica particles (7-30 nm in diameter) and an aqueous solution (B) of basic aluminum or zirconium salt.(a) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.0) with 0.2-10 parts by weight (as Al.sub.2 O.sub.3 or ZrO.sub.2) of the aqueous solution (B), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.1),(b) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.1) with 20-200 parts by weight (as SiO.sub.2) of the sol (S.sub.0), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.2),(c) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.2) with the aqueous solution (B) in an amount corresponding to 2-50% of the amount (as Al.sub.2 O.sub.3 or ZrO.sub.2 in parts by weight) added to 100 parts by weight (as SiO.sub.2) of the sol (S.sub.0) used in step (a), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.3), and(d) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.3) with the sol (S.sub.0) in an amount corresponding to 10-95% of the amount (as SiO.sub.2 in parts by weight) added to 100 parts by weight (as SiO.sub.2) of the sol (S.sub.1) in step (b), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.4).
    • 6. 发明申请
    • Polishing Composition For Silicon Wafer
    • 硅片抛光组合物
    • US20080115423A1
    • 2008-05-22
    • US11662804
    • 2005-10-27
    • Yoshiyuki KashimaMasaaki OhshimaEiichirou IshimizuNaohiko Suemura
    • Yoshiyuki KashimaMasaaki OhshimaEiichirou IshimizuNaohiko Suemura
    • C09K3/14
    • H01L21/02024C09G1/02
    • The present invention relates to a polishing composition for silicon wafer comprising silica; a basic compound; at least one compound selected from the group consisting of amino acid derivatives represented by formula (1) wherein R1, R2 and R3 are identical or different one another, C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and formula (2) wherein R4 and R5 are identical or different each other, hydrogen atom, or C1-12alkyl group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, with a proviso that both R4 and R5 are not hydrogen at the same time, and R6 is C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and the salts of the amino acid derivatives; and water. The polishing composition can prevent metal contamination, particularly copper contamination in polishing of silicon wafer.
    • 本发明涉及包含二氧化硅的硅晶片抛光组合物; 一个基本的化合物; 选自由式(1)表示的氨基酸衍生物中的至少一种化合物,其中R 1,R 2和R 3是 可以被羟基,羧基,苯基或氨基取代的C 1-12亚烷基,以及式(2)中R 1,R 2, >和R 5相同或不同,可以被羟基,羧基,苯基或氨基取代的氢原子或C 1-12烷基 基团,条件是R 4和R 5都不同时为氢,R 6为C 1 可以被羟基,羧基,苯基或氨基取代的-12个亚烷基,以及氨基酸衍生物的盐; 和水。 抛光组合物可以防止金属污染,特别是硅晶片抛光中的铜污染。
    • 7. 发明申请
    • SEMICONDUCTOR WAFER POLISHING LIQUID COMPOSITION
    • 半导体波长抛光液体组合物
    • US20140319411A1
    • 2014-10-30
    • US14357673
    • 2011-11-16
    • Hiroaki SakaidaFumiaki ArakiYoshiyuki Kashima
    • Hiroaki SakaidaFumiaki ArakiYoshiyuki Kashima
    • C09G1/02
    • C09G1/02B24B37/044C09K3/1463H01L21/02024
    • There is provided a polishing liquid composition that can effectively reduce LPDs having a size of 50 nm or less on a wafer surface in polishing of semiconductor wafers. A semiconductor wafer polishing liquid composition including: water; silica particles; an alkaline compound; a water-soluble polymer compound; and polyethylene glycol, wherein the semiconductor wafer polishing liquid composition satisfies conditions (a) to (c): (a) a shape factor SF1 of the silica particles is 1.00 to 1.20, (b) a mean primary particle diameter of the silica particles that is obtained by a nitrogen adsorption method is 5 nm to 100 nm, and a coefficient of particle diameter variation CV value obtained from image analysis of the transmission electron microscope image is in a range of 0% to 15%, and (c) the polyethylene glycol has a number average molecular weight of 200 to 15,000.
    • 提供了一种研磨液组合物,其能够有效地减少在半导体晶片的研磨中的晶片表面上的尺寸为50nm以下的LPD。 一种半导体晶片抛光液组合物,包括:水; 二氧化硅颗粒; 碱性化合物; 水溶性高分子化合物; 和聚乙二醇,其中半导体晶片抛光液组合物满足条件(a)〜(c):(a)二氧化硅粒子的形状因子SF1为1.00〜1.20,(b)二氧化硅粒子的平均一次粒径, 通过氮吸附法得到5nm〜100nm,通过透射型电子显微镜图像的图像分析获得的粒径变化CV值的系数在0%〜15%的范围内,(c)聚乙烯 乙二醇的数均分子量为200〜15,000。