专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06398827B1 Polishing composition 失效
标题翻译：抛光组成
公开(公告)号：US06398827B1
公开(公告)日：2002-06-04
申请号：US09605542
申请日：2000-06-29
申请人： Isao Ota , Tohru Nishimura , Yoshitane Watanabe , Yoshiyuki Kashima , Kiyomi Ema , Yutaka Ohmori
发明人： Isao Ota , Tohru Nishimura , Yoshitane Watanabe , Yoshiyuki Kashima , Kiyomi Ema , Yutaka Ohmori
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C09G1/02
摘要： The present invention relates to a polishing composition for polishing alumina disks, polishing substrates having silica surfaces and semiconductor wafers, comprising a stable aqueous silica sol containing moniliform colloidal silica particles having a ratio (D1/D2) of a particle diameter D1 nm (as measured by dynamic light scattering method) to a mean particle diameter D2 (as measured by nitrogen absorption method) of 3 or more, wherein D1 is between 50 to 800 nm and D2 is between 10 to 120 nm, said moniliform colloidal silica particles being composed of spherical colloidal silica particles and a metal oxide-containing silica bond which bonds these spherical colloidal silica particles together, wherein the spherical colloidal silica particles are linked together in rows in only one plane by observation through an electron microscope, and further wherein said polishing composition contains 0.5 to 50% by weight of said moniliform colloidal silica particles.
摘要翻译：本发明涉及一种用于抛光氧化铝盘的抛光组合物，具有二氧化硅表面的抛光衬底和半导体晶片，其包含稳定的含水二氧化硅溶胶，其含有粒径为D1nm（D1 / D2）的粒径为D1nm 通过动态光散射法）至平均粒径D2（通过氮吸收法测定）为3以上，其中D1为50〜800nm，D2为10〜120nm，所述观察胶体二氧化硅粒子为球形胶体二氧化硅颗粒和将这些球形胶体二氧化硅颗粒结合在一起的含金属氧化物的二氧化硅结合体，其中通过电子显微镜观察，球形胶体二氧化硅颗粒在一个平面内以行排列在一起，并且其中所述抛光组合物含有 0.5〜50重量％的所述念珠状胶体二氧化硅粒子。

2. 发明申请

US20090127501A1 Polishing Composition for Silicon Wafer 审中-公开
标题翻译：硅晶片抛光组合物
公开(公告)号：US20090127501A1
公开(公告)日：2009-05-21
申请号：US11918253
申请日：2006-05-17
申请人： Yoshiyuki Kashima , Masaaki Ohshima , Eiichirou Ishimizu , Naohiko Suemura
发明人： Yoshiyuki Kashima , Masaaki Ohshima , Eiichirou Ishimizu , Naohiko Suemura
IPC分类号： C09K13/02 , C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02024
摘要： The present invention relates to a polishing composition for silicon wafer comprising silica, a basic compound, a polyaminopolycarboxylic acid compound having hydroxy group, and water. The polishing composition can prevent metal contamination by nickel, chromium, iron, copper or the like, particularly copper contamination in polishing of silicon wafer.
摘要翻译：本发明涉及包含二氧化硅，碱性化合物，具有羟基的多氨基多羧酸化合物和水的硅晶片抛光组合物。抛光组合物可以防止镍，铬，铁，铜等的金属污染，特别是硅晶片的抛光中的铜污染。

3. 发明授权

US5989515A Process for producing an acidic aqueous alumina sol 失效
标题翻译：酸性水性氧化铝溶胶的制造方法
公开(公告)号：US5989515A
公开(公告)日：1999-11-23
申请号：US897084
申请日：1997-07-18
申请人： Yoshitane Watanabe , Yoshiyuki Kashima , Kiyomi Ema
发明人： Yoshitane Watanabe , Yoshiyuki Kashima , Kiyomi Ema
IPC分类号： C01F7/02 , C01F7/44 , B01J20/00 , C04B35/10
CPC分类号： B82Y30/00 , C01F7/02 , C01F7/448 , C01P2002/72 , C01P2004/10 , C01P2004/20 , C01P2004/51 , C01P2004/54 , C01P2004/64 , C01P2006/22 , C01P2006/40 , C01P2006/80
摘要： A process for producing a stable acidic aqueous alumina sol containing 50 to 300 nm of elongate secondary particles which are elongated in only one plane and formed by edge-to-edge coagulation of rectangular plate-like primary particles having a length of one side of 10 to 30 nm when observed through an electron microscope, the process comprises the steps of:(A) adding an alkali to an aqueous alumina sol containing fibrous colloidal particles of an amorphous alumina hydrate to produce a reaction mixture having a pH of 9 to 12,(B) subjecting the reaction mixture obtained in the step (A) to a hydrothermal treatment at a temperature of 110 to 250.degree. C. to produce an aqueous suspension containing an alumina hydrate having a boehmite structure, and(C) desalting the aqueous suspension obtained in the step (B) by adding water and an acid by ultrafiltration to form an acidic aqueous alumina sol having a pH of 3 to 6.
摘要翻译：一种制造含有50〜300nm的细长二次粒子的稳定的酸性水溶性氧化铝溶胶的方法，所述细长二次粒子仅在一个平面上伸长，并且通过一边长度为10的矩形板状一次粒子的边缘到边缘凝固而形成至30nm，该方法包括以下步骤：（A）向含有无定形氧化铝水合物的纤维状胶体颗粒的含水氧化铝溶胶中加入碱以产生pH为9至12的反应混合物，（B）将在步骤（A）中获得的反应混合物在110-250℃的温度下进行水热处理，以制备含有勃姆石结构的水合氧化铝的水性悬浮液，和（C）将含水悬浮液在步骤（B）中通过超滤加入水和酸，形成pH为3至6的酸性水性氧化铝溶胶。

4. 发明授权

US5196177A Production of stable aqueous silica sol 失效
标题翻译：生产稳定的水性硅胶
公开(公告)号：US5196177A
公开(公告)日：1993-03-23
申请号：US641709
申请日：1991-01-15
申请人： Yoshitane Watanabe , Yoshiyuki Kashima , Kenji Tanimoto
发明人： Yoshitane Watanabe , Yoshiyuki Kashima , Kenji Tanimoto
IPC分类号： C01B33/149
CPC分类号： C01B33/149
摘要： A sol of flat silica particles (100-1000 nm in size) is produced by the following steps (a) to (d) from an acidic aqueous sol (S.sub.0) of negatively charged silica particles (7-30 nm in diameter) and an aqueous solution (B) of basic aluminum or zirconium salt.(a) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.0) with 0.2-10 parts by weight (as Al.sub.2 O.sub.3 or ZrO.sub.2) of the aqueous solution (B), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.1),(b) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.1) with 20-200 parts by weight (as SiO.sub.2) of the sol (S.sub.0), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.2),(c) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.2) with the aqueous solution (B) in an amount corresponding to 2-50% of the amount (as Al.sub.2 O.sub.3 or ZrO.sub.2 in parts by weight) added to 100 parts by weight (as SiO.sub.2) of the sol (S.sub.0) used in step (a), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.3), and(d) mixing 100 parts by weight (as SiO.sub.2) of the sol (S.sub.3) with the sol (S.sub.0) in an amount corresponding to 10-95% of the amount (as SiO.sub.2 in parts by weight) added to 100 parts by weight (as SiO.sub.2) of the sol (S.sub.1) in step (b), and adjusting the resulting sol to pH 4-7, thereby yielding a sol (S.sub.4).

5. 发明申请

US20080115423A1 Polishing Composition For Silicon Wafer 审中-公开
标题翻译：硅片抛光组合物
公开(公告)号：US20080115423A1
公开(公告)日：2008-05-22
申请号：US11662804
申请日：2005-10-27
申请人： Yoshiyuki Kashima , Masaaki Ohshima , Eiichirou Ishimizu , Naohiko Suemura
发明人： Yoshiyuki Kashima , Masaaki Ohshima , Eiichirou Ishimizu , Naohiko Suemura
IPC分类号： C09K3/14
CPC分类号： H01L21/02024 , C09G1/02
摘要： The present invention relates to a polishing composition for silicon wafer comprising silica; a basic compound; at least one compound selected from the group consisting of amino acid derivatives represented by formula (1) wherein R1, R2 and R3 are identical or different one another, C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and formula (2) wherein R4 and R5 are identical or different each other, hydrogen atom, or C1-12alkyl group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, with a proviso that both R4 and R5 are not hydrogen at the same time, and R6 is C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and the salts of the amino acid derivatives; and water. The polishing composition can prevent metal contamination, particularly copper contamination in polishing of silicon wafer.
摘要翻译：本发明涉及包含二氧化硅的硅晶片抛光组合物; 一个基本的化合物; 选自由式（1）表示的氨基酸衍生物中的至少一种化合物，其中R 1，R 2和R 3是可以被羟基，羧基，苯基或氨基取代的C 1-12亚烷基，以及式（2）中R 1，R 2， >和R 5相同或不同，可以被羟基，羧基，苯基或氨基取代的氢原子或C 1-12烷基基团，条件是R 4和R 5都不同时为氢，R 6为C 1 可以被羟基，羧基，苯基或氨基取代的-12个亚烷基，以及氨基酸衍生物的盐; 和水。抛光组合物可以防止金属污染，特别是硅晶片抛光中的铜污染。

6. 发明授权

US5597512A Method for preparing elongated-shaped silica sol 失效
标题翻译：制备细长形硅胶的方法
公开(公告)号：US5597512A
公开(公告)日：1997-01-28
申请号：US323119
申请日：1994-10-14
申请人： Yoshitane Watanabe , Yoshiyuki Kashima , Hiroyuki Takagi
发明人： Yoshitane Watanabe , Yoshiyuki Kashima , Hiroyuki Takagi
IPC分类号： C01B33/148 , B01J13/00 , C01B33/141 , C01B33/151
CPC分类号： C01B33/141 , B01J13/00
摘要： A method for preparing a silica sol having an elongated shape comprising a step (a) where an aqueous solution containing a water-soluble calcium salt or a water-soluble magnesium salt or a mixture of the water-soluble calcium salt or the water-soluble magnesium salt is mixed with an aqueous colloidal solution of an active silicic acid; a step (b) where an alkaline substance is mixed with the aqueous liquid obtained in the step (a); a step (c) where a part or the whole of the mixture obtained in the step (b) is heated at 60.degree. C. or higher to obtain a heel solution and a feed solution is prepared by a part of the mixture obtained in the step (b) or a mixture separately prepared by the step (b) and the feed solution is added to the heel solution; and a step where water is evaporated during said addition step so that SiO.sub.2 concentration is concentrated to 6 to 30% by weight.
摘要翻译：一种制备具有细长形状的硅溶胶的方法，包括步骤（a），其中含有水溶性钙盐或水溶性镁盐的水溶液或水溶性钙盐或水溶性钙盐的混合物镁盐与活性硅酸的水性胶体溶液混合; 步骤（b）其中将碱性物质与步骤（a）中获得的水性液体混合; 步骤（c）将步骤（b）中获得的混合物的一部分或全部加热至60℃或更高以获得脚后跟溶液，并且通过在将步骤（b）或通过步骤（b）分开制备的混合物和进料溶液加入到脚后跟溶液中; 以及在所述添加步骤中水蒸发的步骤，使SiO 2浓度浓缩至6〜30重量％。

7. 发明申请

US20140319411A1 SEMICONDUCTOR WAFER POLISHING LIQUID COMPOSITION 审中-公开
标题翻译：半导体波长抛光液体组合物
公开(公告)号：US20140319411A1
公开(公告)日：2014-10-30
申请号：US14357673
申请日：2011-11-16
申请人： Hiroaki Sakaida , Fumiaki Araki , Yoshiyuki Kashima
发明人： Hiroaki Sakaida , Fumiaki Araki , Yoshiyuki Kashima
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/02024
摘要： There is provided a polishing liquid composition that can effectively reduce LPDs having a size of 50 nm or less on a wafer surface in polishing of semiconductor wafers. A semiconductor wafer polishing liquid composition including: water; silica particles; an alkaline compound; a water-soluble polymer compound; and polyethylene glycol, wherein the semiconductor wafer polishing liquid composition satisfies conditions (a) to (c): (a) a shape factor SF1 of the silica particles is 1.00 to 1.20, (b) a mean primary particle diameter of the silica particles that is obtained by a nitrogen adsorption method is 5 nm to 100 nm, and a coefficient of particle diameter variation CV value obtained from image analysis of the transmission electron microscope image is in a range of 0% to 15%, and (c) the polyethylene glycol has a number average molecular weight of 200 to 15,000.
摘要翻译：提供了一种研磨液组合物，其能够有效地减少在半导体晶片的研磨中的晶片表面上的尺寸为50nm以下的LPD。一种半导体晶片抛光液组合物，包括：水; 二氧化硅颗粒; 碱性化合物; 水溶性高分子化合物; 和聚乙二醇，其中半导体晶片抛光液组合物满足条件（a）〜（c）：（a）二氧化硅粒子的形状因子SF1为1.00〜1.20，（b）二氧化硅粒子的平均一次粒径，通过氮吸附法得到5nm〜100nm，通过透射型电子显微镜图像的图像分析获得的粒径变化CV值的系数在0％〜15％的范围内，（c）聚乙烯乙二醇的数均分子量为200〜15,000。

8. 发明授权

US06632489B1 Moniliform silica sol, process for producing the same, and ink-jet recording medium 有权
标题翻译：单晶硅溶胶，其制造方法和喷墨记录介质
公开(公告)号：US06632489B1
公开(公告)日：2003-10-14
申请号：US09763965
申请日：2001-02-28
申请人： Yoshitane Watanabe , Yoshiyuki Kashima , Kiyomi Ema , Yutaka Ohmori
发明人： Yoshitane Watanabe , Yoshiyuki Kashima , Kiyomi Ema , Yutaka Ohmori
IPC分类号： B32B300
CPC分类号： B41M5/5218 , B41M2205/12 , C01B33/1485
摘要： A stable silica sol having an SiO2 concentration of 1 to 50% by weight and containing liquid-medium dispersed moniliform colloidal silica particles each having 3 or more as a ratio of D1/D2 of a particle diameter (D1 nm) measured by a dynamic light scattering method to a mean particle diameter (a particle diameter measured by a nitrogen absorption method: D2 nm) where D1 is 50 to 500 nm, and which are comprised by spherical colloidal silica particles having a mean particle diameter of 10 to 80 nm and metal oxide-containing silica bonding these spherical-colloidal silica particles, and in which the spherical colloidal silica particles link in rows in only one plane, process for producing such and a coating composition for ink receiving layers containing such a silica sol and an ink jet recording medium.
摘要翻译：一种稳定的硅溶胶，其SiO 2浓度为1〜50重量％，含有液体介质分散的单状胶体二氧化硅粒子，其分别具有3个以上的D < 具有粒径（D 1 nm的HIL> 1 / D 2 ）通过动态光散射法测量为平均粒径（通过氮吸收法测量的粒径：D 2 PDAT> nm）其中D 1 为50〜500nm，由平均粒径为10〜80nm的球形胶体二氧化硅粒子和与这些球状胶体二氧化硅粒子结合的含金属氧化物的二氧化硅粒子构成，球形胶体二氧化硅颗粒仅在一个平面中成行排列，制备方法和用于含有这种二氧化硅溶胶和喷墨记录介质的油墨接收层的涂料组合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式