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1. 发明申请

US20070077874A1 Flexible materials processing rotation tool 审中-公开
标题翻译：柔性材料加工旋转工具
公开(公告)号：US20070077874A1
公开(公告)日：2007-04-05
申请号：US11534315
申请日：2006-09-22
申请人： Yoshitada Ataka , Akira Osada , Ryuichi Matsuki
发明人： Yoshitada Ataka , Akira Osada , Ryuichi Matsuki
IPC分类号： B24B21/18
CPC分类号： B24D7/18 , B24B53/017 , B24B53/12
摘要： A flexible material processing rotation tool that executes processing against a target material composed of flexible material, and which is characterized by forming or more cutting blade protrusions on the surface of the substrate so that they project upward, formation of an inclined surface on the surface of cutting blade protrusion and formation of cutting blade ridge at the section that projects most upward from among the ridge areas of inclined surface, and by arrangement so that a portion of the inclined surfaces of cutting blade protrusions facing at least in one direction of the circumferential direction of the rotation of the substrate, and arrangement of at least a portion of the remaining inclined surfaces of cutting blade protrusions in at least the other direction of the circumferential direction of the rotation of the substrate.
摘要翻译：一种柔性材料处理旋转工具，其对由柔性材料构成的目标材料执行处理，其特征在于，在所述基板的表面上形成或更多切割刀片突起，使得它们向上突出，在所述表面上形成倾斜表面切割刀片突起和在从倾斜表面的脊区域中最向最突出的部分形成切割刀脊，并且通过布置使得切割刀片突起的倾斜表面的一部分至少沿圆周方向的一个方向基板旋转的至少一部分，以及至少沿着基板的旋转方向的另一方向的切割刀片突起的剩余倾斜面的至少一部分的布置。

2. 发明申请

US20060130627A1 Cutting tool for soft material 审中-公开
标题翻译：软材切割工具
公开(公告)号：US20060130627A1
公开(公告)日：2006-06-22
申请号：US10542234
申请日：2003-03-28
申请人： Ryuichi Matsuki , Yoshitada Ataka , Hideo Oshima
发明人： Ryuichi Matsuki , Yoshitada Ataka , Hideo Oshima
IPC分类号： B23D57/00
CPC分类号： B24B53/017 , B23C5/02 , B24B53/12 , Y10T83/9319
摘要： A cutting tool for machining a soft material is characterized by, on a substrate, a formation of an upward projecting protruding portion having a cutting blade ridge and a formation of an upward projecting pressing portion having a lower height than the protruding portion. The pressing portion adjoins at least the front side of the protruding portion in the rotational direction T (front side in the work material cutting direction). This cutting tool for machining a soft material may improve machining efficiency when conditioning the surface of a pad.
摘要翻译：用于加工软质材料的切削工具的特征在于，在基板上形成具有切割刃脊的向上突出的突出部分，并形成具有比突出部分低的高度的向上突出的按压部分。按压部至少在突出部的前侧沿旋转方向T（工件材料切削方向的前侧）相邻。用于加工柔软材料的该切割工具可以在调节垫的表面时提高加工效率。

3. 发明授权

US5943212A Ceramic circuit board and semiconductor device using same 失效
标题翻译：陶瓷电路基板和使用其的半导体器件
公开(公告)号：US5943212A
公开(公告)日：1999-08-24
申请号：US841707
申请日：1997-04-30
申请人： Michio Horiuchi , Shigetsugu Muramatsu , Ryuichi Matsuki
发明人： Michio Horiuchi , Shigetsugu Muramatsu , Ryuichi Matsuki
IPC分类号： H01L23/15 , H01L23/498 , H05K1/02 , H05K1/03 , H05K1/11 , H05K3/40 , H05H7/20
CPC分类号： H05K1/0271 , H01L23/49816 , H01L23/49827 , H01L23/49894 , H01L2224/48091 , H01L2224/48227 , H01L24/48 , H01L2924/00014 , H01L2924/01079 , H01L2924/01087 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/1532 , H01L2924/15787 , H01L2924/181 , H05K1/0306 , H05K1/113 , H05K2201/0133 , H05K3/4053 , Y10S428/901
摘要： Thermal stress caused by a difference in the coefficient of thermal expansion between the mounting substrate and the ceramic substrate acts little on the junction portions of the external connection terminals when a semiconductor device is mounted avoiding such problems that the junction portions are broken or peeled off the mounting substrate. An insulating buffer layer 40 is adhered onto the mounting surface of ceramic substrate 32 having required wiring patterns 34 onto where the external connection terminals 12 will be connected, the insulating buffer layer 40 having a Young's modulus smaller than that of a ceramic material of the ceramic substrate 32 and having electrically insulating property, terminal pads 14 are provided on the outer surface of the insulating buffer layer 40, and the terminal pads 14 and the wiring patterns 34 are electrically connected together through buffer conducting portions 42 provided penetrating through the insulating buffer layer 40 and having a Young's modulus nearly equal to that of the insulating buffer layer 40.
摘要翻译：由于安装基板和陶瓷基板之间的热膨胀系数的差异导致的热应力在安装半导体器件时在外部连接端子的接合部分上几乎不起作用，从而避免了连接部分断开或剥离的问题安装基板。将绝缘缓冲层40粘附到具有所需布线图案34的陶瓷基板32的安装面上，连接到外部连接端子12上，绝缘缓冲层40的杨氏模量小于陶瓷的陶瓷材料基板32并具有电绝缘性能，在绝缘缓冲层40的外表面上设置端子焊盘14，并且端子焊盘14和布线图案34通过穿过绝缘缓冲层的缓冲导电部分42电连接在一起 40，其杨氏模量几乎等于绝缘缓冲层40的杨氏模量。

4. 发明申请

US20080128915A1 Semiconductor package and method for manufacturing the same 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US20080128915A1
公开(公告)日：2008-06-05
申请号：US11976825
申请日：2007-10-29
申请人： Keisuke Ueda , Takaharu Miyamoto , Ryuichi Matsuki
发明人： Keisuke Ueda , Takaharu Miyamoto , Ryuichi Matsuki
IPC分类号： H01L23/52 , H01L21/00
CPC分类号： H01L23/49827 , H01L21/4857 , H01L23/147 , H01L23/15 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/09701 , H01L2924/10253 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.
摘要翻译：半导体封装包括：包括金属布线层和绝缘树脂层的堆积布线层; 以及与积层布线层的绝缘树脂层相比，热膨胀系数比安装在积层布线层上的半导体芯片的热膨胀系数更接近的低热膨胀材料层，低热膨胀材料层为结合到构成布线层的后表面的与安装有半导体芯片的积聚线层的前表面的区域相对应的整个区域。

5. 发明申请

US20110291258A1 HEAT RADIATION COMPONENT AND SEMICONDUCTOR PACKAGE INCLUDING SAME 有权
标题翻译：热辐射组件和半导体封装包括它们
公开(公告)号：US20110291258A1
公开(公告)日：2011-12-01
申请号：US13114188
申请日：2011-05-24
申请人： Kei MURAYAMA , Shigeaki Suganuma , Masakuni Kitajima , Ryuichi Matsuki , Hiroyuki Miyajima
发明人： Kei MURAYAMA , Shigeaki Suganuma , Masakuni Kitajima , Ryuichi Matsuki , Hiroyuki Miyajima
IPC分类号： H01L23/34 , F28F7/00
CPC分类号： H01L23/3736 , F28D2021/0029 , F28F7/00 , F28F2255/04 , F28F2255/06 , F28F2265/26 , F28F2275/025 , H01L23/3675 , H01L23/42 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2924/16251
摘要： A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from the semiconductor device than the first side. The coefficient of thermal expansion of the second layer is lower than the coefficient of thermal expansion of the first layer.
摘要翻译：构造成通过安装在基板上的半导体器件上的热界面材料提供的散热部件包括：第一层，其被定位在第一侧上，第二层被堆叠在第一层上，以定位在离第二侧更远的第二侧半导体器件比第一面。第二层的热膨胀系数低于第一层的热膨胀系数。

6. 发明申请

US20100022054A1 SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US20100022054A1
公开(公告)日：2010-01-28
申请号：US12575142
申请日：2009-10-07
申请人： Keisuke UEDA , Takaharu Miyamoto , Ryuichi Matsuki
发明人： Keisuke UEDA , Takaharu Miyamoto , Ryuichi Matsuki
IPC分类号： H01L21/56
CPC分类号： H01L23/49827 , H01L21/4857 , H01L23/147 , H01L23/15 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/09701 , H01L2924/10253 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.
摘要翻译：半导体封装包括：包括金属布线层和绝缘树脂层的堆积布线层; 以及与积层布线层的绝缘树脂层相比，热膨胀系数比安装在积层布线层上的半导体芯片的热膨胀系数更接近的低热膨胀材料层，低热膨胀材料层为结合到构成布线层的后表面的与安装有半导体芯片的积聚线层的前表面的区域相对应的整个区域。

7. 发明授权

US07619316B2 Semiconductor package and method for manufacturing the same 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US07619316B2
公开(公告)日：2009-11-17
申请号：US11976825
申请日：2007-10-29
申请人： Keisuke Ueda , Takaharu Miyamoto , Ryuichi Matsuki
发明人： Keisuke Ueda , Takaharu Miyamoto , Ryuichi Matsuki
IPC分类号： H01L22/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49827 , H01L21/4857 , H01L23/147 , H01L23/15 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/09701 , H01L2924/10253 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor package includes: a build-up wiring layer including a metal wiring layer and an insulation resin layer; and a low thermal expansion material layer having a coefficient of thermal expansion closer to that of a semiconductor chip mounted on the build-up wiring layer as compared with the insulation resin layer of the build-up wiring layer, the low thermal expansion material layer being bonded to an entire region of a rear surface of the build-up wiring layer corresponding to a region of a front surface of the build-up wiring layer on which the semiconductor chip is mounted.
摘要翻译：半导体封装包括：包括金属布线层和绝缘树脂层的堆积布线层; 以及与积层布线层的绝缘树脂层相比，热膨胀系数比安装在积层布线层上的半导体芯片的热膨胀系数更接近的低热膨胀材料层，低热膨胀材料层为结合到构成布线层的后表面的与安装有半导体芯片的积聚线层的前表面的区域相对应的整个区域。

8. 发明授权

US5324693A Ceramic composites and process for manufacturing the same 失效
标题翻译：陶瓷复合材料及其制造方法相同
公开(公告)号：US5324693A
公开(公告)日：1994-06-28
申请号：US959958
申请日：1992-10-13
申请人： Ryuichi Matsuki , Takeyoshi Takenouchi , Hisao Ueda , Hiroshi Sasaki
发明人： Ryuichi Matsuki , Takeyoshi Takenouchi , Hisao Ueda , Hiroshi Sasaki
IPC分类号： C04B35/117 , C04B35/54 , C04B35/56
CPC分类号： C04B35/117
摘要： The ceramic composites consisting of sintered alumina comprising a polycrystalline alumina matrix having a grain size of from 0.5 to 10 .mu.m, and fine particles of TiB.sub.2 2 .mu.m or less in diameter being dispersed in the alumina grains, the composite alumina ceramic containing from 15 to 40% by volume of TiB.sub.2 ; or a ceramic composites comprising a polycrystalline alumina matrix as above, fine particles of TiB.sub.2, and fine particles of SiC, the fine particles of TiB.sub.2 and SiC being each 2 .mu.m or less in diameter and being dispersed in the alumina grains, the ceramic composites containing from 5 to 30% by volume of TiB.sub.2 and from 5 to 30% by volume of SiC.
摘要翻译：由包含晶粒尺寸为0.5至10μm的多晶氧化铝基质和直径为2μm或更小的TiB2细颗粒的烧结氧化铝组成的陶瓷复合材料分散在氧化铝颗粒中，复合氧化铝陶瓷含有15 至40体积％的TiB 2; 或包含如上所述的多晶氧化铝基体的陶瓷复合材料，TiB 2的细颗粒和SiC的细颗粒，TiB 2和SiC的细颗粒直径均为2μm或更小并分散在氧化铝颗粒中，陶瓷复合材料含有5〜30体积％的TiB 2和5〜30体积％的SiC。

9. 发明授权

US5322823A Ceramic composites and process for its production 失效
标题翻译：陶瓷复合材料及其生产工艺
公开(公告)号：US5322823A
公开(公告)日：1994-06-21
申请号：US27525
申请日：1993-03-08
申请人： Hisao Ueda , Ryuichi Matsuki , Takeyoshi Takenouchi , Hiroshi Sasaki , Koichi Niihara
发明人： Hisao Ueda , Ryuichi Matsuki , Takeyoshi Takenouchi , Hiroshi Sasaki , Koichi Niihara
IPC分类号： C04B35/10 , C04B35/117 , C04B35/80 , C04B35/56 , C04B35/58
CPC分类号： C04B35/117 , C04B35/803
摘要： A ceramics composites prepared by dispersing any one of the following materials (i) to (viii) in Al.sub.2 O.sub.3 which as a matrix-containing crystalline grains having a grain size of 0.5 to 100 .mu.m. (i) 3 to 40% by volume of fine TiN particles having a particle size of not more than 2 .mu.m and 3 to 40% by volume of fine SiC particles having a particle size of not more than 2 .mu.m. (ii) 3 to 40% by volume of fine TiN particles having a particle size of not more than 2 .mu.m and 3 to 40% by volume of fine Si.sub.3 N.sub.4 particles having a particle size of not more than 2 .mu.m. (iii) 2 to 35% by volume of fine TiC particles having a particle size of not more than 2 .mu.m and 5 to 40% by volume of SiC whiskers having a diameter of 0.05 to 2 .mu.m. (iv) 2 to 35% by volume of fine TiC particles having a particle size of not more than 2 .mu.m and 5 to 40% by volume of Si.sub.3 N.sub.4 whiskers having a diameter of 0.1 to 2 .mu.m. (v) 3 to 40% by volume of fine TiN particles having a particle size of not more than 2 .mu.m and 3 to 30% by volume of SiC whiskers having a diameter of 0.05 to 2 .mu.m. (vi) 3 to 40% by volume of fine TiN particles having a particle size of not more than 2 .mu.m and 3 to 30% by volume of Si.sub.3 N.sub.4 whiskers having a diameter of 0.1 to 2 .mu.m. (vii) 2 to 35% by volume of fine TiC particles having a particle size of not more than 2 .mu.m and 5 to 40% by volume of fine SiC particles having a particle size of not more than 2 .mu.m. (viii) 2 to 35% by volume of fine TiC particles having a particle size of not more than 2 .mu.m and 5 to 40% by volume of fine Si.sub.3 N.sub.4 particles having a particle size of not more than 2 .mu.m.
摘要翻译：通过在Al 2 O 3中分散以下材料（i）至（viii）中的任一种制备的陶瓷复合材料，其作为晶粒尺寸为0.5至100μm的基质的晶粒。（i）3〜40体积％的粒径为2μm以下的细TiN粒子和3〜40体积％的粒径为2μm以下的微细SiC粒子。（ii）3〜40体积％的粒径为2μm以下的细小TiN粒子和3〜40体积％的粒径为2μm以下的细小Si3N4粒子。（iii）2〜35体积％的粒径为2μm以下的细小TiC粒子和5〜40体积％的直径为0.05〜2μm的SiC晶须。（iv）2〜35体积％的粒径为2μm以下的细小TiC粒子和5〜40体积％的直径为0.1〜2μm的Si 3 N 4晶须。（v）3〜40体积％的粒径为2μm以下的细小TiN粒子和3〜30体积％的直径为0.05〜2μm的SiC晶须。（vi）3〜40体积％的粒径不大于2μm的细TiN粒子和3〜30体积％的直径为0.1〜2μm的Si 3 N 4晶须。（vii）2〜35体积％的粒径为2μm以下的细小TiC粒子和5〜40体积％的粒径为2μm以下的微细SiC粒子。（viii）2〜35体积％的粒径为2μm以下的细小TiC粒子和5〜40体积％的粒径为2μm以下的微细Si 3 N 4粒子。

10. 发明授权

US08674499B2 Heat radiation component and semiconductor package including same 有权
标题翻译：散热部件和包括其的半导体封装
公开(公告)号：US08674499B2
公开(公告)日：2014-03-18
申请号：US13114188
申请日：2011-05-24
申请人： Kei Murayama , Shigeaki Suganuma , Masakuni Kitajima , Ryuichi Matsuki , Hiroyuki Miyajima
发明人： Kei Murayama , Shigeaki Suganuma , Masakuni Kitajima , Ryuichi Matsuki , Hiroyuki Miyajima
IPC分类号： H01L23/34 , H01L23/10 , H01L21/00
CPC分类号： H01L23/3736 , F28D2021/0029 , F28F7/00 , F28F2255/04 , F28F2255/06 , F28F2265/26 , F28F2275/025 , H01L23/3675 , H01L23/42 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2924/16251
摘要： A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from the semiconductor device than the first side. The coefficient of thermal expansion of the second layer is lower than the coefficient of thermal expansion of the first layer.
摘要翻译：构造成通过安装在基板上的半导体器件上的热界面材料提供的散热部件包括：第一层，其被定位在第一侧上，第二层被堆叠在第一层上，以定位在离第二侧更远的第二侧半导体器件比第一面。第二层的热膨胀系数低于第一层的热膨胀系数。

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