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1. 发明授权

US06917780B2 Image forming apparatus that prevents attachment of toner to lateral sides of the developing roll 失效
标题翻译：图像形成装置防止调色剂附着到显影辊的侧面
公开(公告)号：US06917780B2
公开(公告)日：2005-07-12
申请号：US10173416
申请日：2002-06-13
申请人： Yoshio Ozawa , Eiji Ochiai , Shoichi Sakata , Toshinori Nishimura , Masayoshi Yamada
发明人： Yoshio Ozawa , Eiji Ochiai , Shoichi Sakata , Toshinori Nishimura , Masayoshi Yamada
IPC分类号： G03G15/08
CPC分类号： G03G15/0808 , G03G2215/0607 , G03G2215/0634
摘要： An image forming apparatus of non-contact developing method using two-component developer material which is capable of obtaining a clear image free from fogging, ghost and toner contamination. The image forming apparatus has at least one developing unit which includes a developing roll and a magnetic roll, the developing unit develops an electrostatic latent image on a photosensitive body with a toner thin layer formed on the surface of a developing roll wherein a toner thin layer forming region on the developing roll is smaller than a magnetic brush forming region on the magnetic roll. A high resistivity region is adjacent each end of the toner thin layer forming region on the developing roll. A control device controls a developer material replenishment and controls the biasing to the developing roll and magnetic roll.
摘要翻译：一种使用双组分显影剂材料的非接触显影方法的图像形成装置，其能够获得没有起雾，重影和调色剂污染的清晰图像。图像形成装置具有至少一个包括显影辊和磁性辊的显影单元，显影单元在感光体上显影，其中形成在显影辊表面上的调色剂薄层，其中调色剂薄层显影辊上的成膜区域小于磁辊上的磁刷形成区域。高电阻率区域与显影辊上的调色剂薄层形成区域的每一端相邻。控制装置控制显影剂材料补充并控制对显影辊和磁辊的偏置。

2. 发明授权

US06868240B2 Method for developing in hybrid developing apparatus 失效
标题翻译：在混合显影装置中显影的方法
公开(公告)号：US06868240B2
公开(公告)日：2005-03-15
申请号：US10388563
申请日：2003-03-14
申请人： Yoshio Ozawa , Shoichi Sakata , Toshinori Nishimura
发明人： Yoshio Ozawa , Shoichi Sakata , Toshinori Nishimura
IPC分类号： G03G15/09 , G03G21/00
CPC分类号： G03G15/0907
摘要： To avoid developing ghost and selective developing without complicating a developing apparatus and to supply surly charged toner to a developing roll while unevenness of images is not generated to obtain stable images for a long time even when continuous printing, a method for developing in a hybrid developing apparatus is provided, which is characterized in that a data amount of each image, which an image forming apparatus prints and a number of paper sheets passed are detected and that an interval of the action of recovering and exchanging a toner layer on the developing roll to the magnetic roll after printing between paper sheets is variably set in accordance with a printing coefficient determined by the data amount and the number of paper sheets passed and further, a method for developing in a color tandem-type image forming apparatus provided with a plurality of the hybrid developing apparatuses for all different colors of toner, which are disposed along the moving direction of a transfer medium of images is provided, wherein after toner layers on the developing rolls of the all developing apparatuses are peeled off toward the magnetic rolls after developing, a thickness of the toner layer of the each developing apparatus is variably controlled at the beginning of developing in accordance with the image consistency of the developing apparatus having a highest image consistency among image data of toner colors.
摘要翻译：为了避免在不使显影装置复杂化的情况下发生重影和选择性显影，并且即使在连续印刷时也不产生不均匀图像以获得稳定图像的显影辊中的充满电的调色剂，用于在混合显影中发展的方法提供了一种装置，其特征在于，检测图像形成装置打印的每张图像的数据量和通过的纸张数量，并且将显影辊上的调色剂层回收和更换的动作的间隔设置为根据由数据量和通过的纸张数量确定的打印系数，可变地设置在纸张之间打印之后的磁辊，并且还提供了一种在具有多个纸张的彩色串列型图像形成装置中显影的方法用于所有不同颜色的调色剂的混合显影装置沿着a的移动方向设置提供了图像的转印介质，其中在显影之后，在显影装置的显影辊上的调色剂层之后朝向磁性辊剥离，每个显影装置的调色剂层的厚度在显影开始时被可变地控制根据调色剂图像数据之间具有最高图像一致性的显影装置的图像一致性。

3. 发明授权

US06512909B2 Image forming process and apparatus and control method thereof 有权
公开(公告)号：US06512909B2
公开(公告)日：2003-01-28
申请号：US09922003
申请日：2001-07-31
申请人： Yoshio Ozawa , Eiji Ochiai , Shoichi Sakata
发明人： Yoshio Ozawa , Eiji Ochiai , Shoichi Sakata
IPC分类号： G03G1509
CPC分类号： G03G13/08 , G03G15/065 , G03G2215/0607 , G03G2215/0634
摘要： When image formation is performed by an apparatus comprising: a magnetic roll for generating a magnetic brush by carrier having toner adhering triboelectrically thereto, a developer roll on the surface of which a thin layer of the toner supplied by the magnetic brush is formed, and a photoreceptor onto which the toner of thin layer jumps selectively in accordance with the latent image thereon; positively chargeable toner of which charge amount is controlled in 5˜20 &mgr;C/g is used, the surface potential of the photoreceptor is set to a range above 0 to 250 V, and the after exposure potential which is the potential right after the photoreceptor is exposed is in a range of 0˜ to 100 V.

4. 发明授权

US06829448B2 Image forming apparatus and image forming method 有权
标题翻译：图像形成装置及图像形成方法
公开(公告)号：US06829448B2
公开(公告)日：2004-12-07
申请号：US10396080
申请日：2003-03-25
申请人： Yoshio Ozawa , Yuji Kamiyama , Shoichi Sakata , Toshinori Nishimura
发明人： Yoshio Ozawa , Yuji Kamiyama , Shoichi Sakata , Toshinori Nishimura
IPC分类号： G03G1508
CPC分类号： G03G15/0815 , G03G2215/0624
摘要： A method and apparatus for image forming includes a hybrid developing apparatus that supplies surly charged toner to a developing roll. The apparatus includes a developing roll that is electrically conductive at least on its surface. The image forming apparatus and the method have a constitution capable of applying an alternating current bias having a duty ratio in the range of 10 to 50% and a direct current bias superposed thereon. The developing roll is directly confronted with a latent image bearing body through an insulative toner thin layer at the nearest region of the developing roll and the latent image bearing body. An independent bias is applied to each of the developing roll and the magnetic roll, and the toner is refreshed by the varying duty ratio of the alternate current bias and the direct current bias after developing.
摘要翻译：图像形成方法和装置包括向显影辊供给带电荷的调色剂的混合显影装置。该装置包括至少在其表面上导电的显影辊。图像形成装置和方法具有能够施加占空比在10〜50％的范围内的交流偏压和叠加在其上的直流偏压的结构。显影辊在显影辊和潜像承载体的最近的区域处通过绝缘性调色剂薄层直接面对潜像承载体。对显影辊和磁辊中的每一个施加独立的偏压，并且调色剂由显影后的交流偏压和直流偏压的变化占空比来刷新。

5. 发明授权

US08637915B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08637915B2
公开(公告)日：2014-01-28
申请号：US13007258
申请日：2011-01-14
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

6. 再颁专利

USRE44630E1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE44630E1
公开(公告)日：2013-12-10
申请号：US13616208
申请日：2012-09-14
申请人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
发明人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
IPC分类号： H01L21/331
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/28282 , H01L27/11521 , H01L29/42332 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括设置在所述半导体衬底的表面上的隧道绝缘膜，所述隧道绝缘膜包括半导体晶粒，所述半导体晶粒包括在隧道绝缘膜的两端部比隧道绝缘膜的其他部分所包含的半导体晶粒小的晶粒尺寸，隧道绝缘膜上设置的电荷存储层，设置在电荷存储层上的绝缘膜，以及控制栅电极设置在绝缘膜上。

7. 发明授权

US08604536B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08604536B2
公开(公告)日：2013-12-10
申请号：US12406841
申请日：2009-03-18
申请人： Katsuyuki Sekine , Yoshio Ozawa
发明人： Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/513 , H01L29/66833
摘要： A semiconductor device includes a memory cell transistor including a first lower insulating film provided on a semiconductor substrate, a first intermediate insulating film provided on the first lower insulating film, a first upper insulating film provided on the first intermediate insulating film, and a first gate electrode provided on the first upper insulating film, and a select transistor including a second lower insulating film provided on the semiconductor substrate, a second intermediate insulating film provided on the second lower insulating film, a second upper insulating film provided on the second intermediate insulating film, and a second gate electrode provided on the second upper insulating film, wherein trap density of the second intermediate insulating film is lower than that of the first intermediate insulating film.
摘要翻译：半导体器件包括存储单元晶体管，其包括设置在半导体衬底上的第一下绝缘膜，设置在第一下绝缘膜上的第一中间绝缘膜，设置在第一中间绝缘膜上的第一上绝缘膜和第一栅极设置在第一上绝缘膜上的电极和设置在半导体衬底上的第二下绝缘膜的选择晶体管，设置在第二下绝缘膜上的第二中间绝缘膜，设置在第二中间绝缘膜上的第二上绝缘膜以及设置在第二上绝缘膜上的第二栅电极，其中第二中间绝缘膜的阱密度低于第一中间绝缘膜的陷阱密度。

8. 发明授权

US08324679B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08324679B2
公开(公告)日：2012-12-04
申请号：US13430153
申请日：2012-03-26
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

9. 发明申请

US20120282773A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120282773A1
公开(公告)日：2012-11-08
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/302
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

10. 发明授权

US08304352B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08304352B2
公开(公告)日：2012-11-06
申请号：US13051031
申请日：2011-03-18
申请人： Masayuki Tanaka , Kazuhiro Matsuo , Yoshio Ozawa
发明人： Masayuki Tanaka , Kazuhiro Matsuo , Yoshio Ozawa
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28282 , H01L27/11568 , H01L27/11582
摘要： According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.
摘要翻译：根据一个实施例，提供一种制造半导体器件的方法，包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜并且与半导体区域相邻，相对于氮化物膜进行氧化，将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜，并且使形成在该半导体层上的氮化膜的一部分半导体区域作为电荷存储绝缘膜的至少一部分，在电荷存储绝缘膜上形成块绝缘膜，并在块绝缘膜上形成栅极电极膜。

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