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1. 发明授权

US06515073B2 Anti-reflective coating-forming composition 失效
标题翻译：防反射涂层组合物
公开(公告)号：US06515073B2
公开(公告)日：2003-02-04
申请号：US09817077
申请日：2001-03-26
申请人： Yoshinori Sakamoto , Katsumi Omori , Yoshio Hagiwara
发明人： Yoshinori Sakamoto , Katsumi Omori , Yoshio Hagiwara
IPC分类号： C08G7718
CPC分类号： C08F8/42
摘要： An anti-reflective coating-forming composition comprising: (A) at least one compound selected from the group consisting of (i) a compound represented by the following formula (1): Si(OR1)a(OR2)b(OR3)c(OR4)d (1) (ii) a compound represented by the following formula (2): R5Si(OR6)e(OR7)f(OR8)g (2) and (iii) a compound represented by the following formula (3): R9R10Si(OR11)h(OR12)I (3) and (B) a thermosetting resin which can be condensed to said component (A) and has an absorption capacity with respect to exposing light.
摘要翻译：一种抗反射涂层组合物，其包含：（A）至少一种选自（i）由下式（1）表示的化合物的化合物：（ii）由下式（2）表示的化合物：和（iii）由下式（3）表示的化合物：和（B）可以与所述组分（A）冷凝并具有相对于曝光的吸收能力的热固性树脂。

2. 发明授权

US5496402A Method and liquid coating composition for the formation of silica-based coating film on substrate surface 失效
标题翻译：用于在基材表面形成二氧化硅基涂膜的方法和液体涂料组合物
公开(公告)号：US5496402A
公开(公告)日：1996-03-05
申请号：US307063
申请日：1994-09-16
申请人： Yoshinori Sakamoto , Yoshio Hagiwara , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Yoshinori Sakamoto , Yoshio Hagiwara , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： C08G77/18 , C03C1/00 , C08G77/06 , C09D183/02 , C09D183/04 , C09D183/05 , C09D183/06 , C03C3/06
CPC分类号： C03C1/008 , C09D183/02 , C09D183/04
摘要： Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydrolysis-cocondensation product of(a) a first hydrolyzable silane compound represented by the general formulaHSi(OR).sub.3, in which each R is, independently from the others, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and(b) a second hydrolyzable silane compound represented by the general formulaSi(OR).sub.4, in which each R has the same meaning as defined above, in a molar ratio of (a):(b) in the range from 1:9 to 9:1; and (B) an organic solvent to dissolve the component (A). The storage stability of the coating composition can be improved by removing the alcohol contained therein as the hydrolysis product of the silane compounds to such a content as not to exceed 15% by weight.
摘要翻译：提出了一种液体涂料组合物，用于形成具有良好保存稳定性的硅质涂膜，用于各种基材表面的保护，调平或电绝缘。该组合物是均匀的溶液，其包含：（A）（a）由通式HSi（OR）3表示的第一可水解硅烷化合物的部分共水解 - 缩聚产物，其中每个R独立地为烷基具有1至4个碳原子的基团或苯基，和（b）由通式Si（OR）4表示的第二可水解硅烷化合物，其中每个R具有与上述相同的含义，摩尔比为 a）:( b）在1:9至9:1的范围内; 和（B）有机溶剂以溶解组分（A）。通过将其中含有的醇作为硅烷化合物的水解产物除去不超过15重量％的含量，可以提高涂料组合物的保存稳定性。

3. 发明授权

US5795378A Coating solution for silica-based coating film and method for the preparation thereof 失效
公开(公告)号：US5795378A
公开(公告)日：1998-08-18
申请号：US935510
申请日：1997-09-23
申请人： Yoshinori Sakamoto , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Yoshinori Sakamoto , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： C08G77/06 , C08J3/09 , C09D183/04 , H01L21/316 , C09D183/06
CPC分类号： C08J3/095 , C08G77/06 , C09D183/04 , C08J2383/04
摘要： Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.

4. 发明授权

US5614251A Method and liquid coating composition for the formation of silica-based coating film on substrate surface 失效
标题翻译：用于在基材表面形成二氧化硅基涂膜的方法和液体涂料组合物
公开(公告)号：US5614251A
公开(公告)日：1997-03-25
申请号：US564710
申请日：1995-11-29
申请人： Yoshinori Sakamoto , Yoshio Hagiwara , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Yoshinori Sakamoto , Yoshio Hagiwara , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： C08G77/18 , C03C1/00 , C08G77/06 , C09D183/02 , C09D183/04 , C09D183/05 , B05D3/02
CPC分类号： C03C1/008 , C09D183/02 , C09D183/04
摘要： Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydrolysis-cocondensation product of(a) a first hydrolyzable silane compound represented by the general formulaHSi(OR).sub.3, in which each R is, independently from the others, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and(b) a second hydrolyzable silane compound represented by the general formulaSi(OR).sub.4, in which each R has the same meaning as defined above,in a molar ratio of (a):(b) in the range from 1:9 to 9:1; and (B) an organic solvent to dissolve the component (A). The storage stability of the coating composition can be improved by removing the alcohol contained therein as the hydrolysis product of the silane compounds to such a content as not to exceed 15% by weight.
摘要翻译：提出了一种液体涂料组合物，用于形成具有良好保存稳定性的硅质涂膜，用于各种基材表面的保护，调平或电绝缘。该组合物是一种均匀溶液，其包含：（A）（a）由通式为H（OR）3表示的第一可水解硅烷化合物的部分共水解 - 缩聚产物，其中每个R独立地为烷基具有1至4个碳原子或苯基，和（b）由通式Si（OR）4表示的第二可水解硅烷化合物，其中每个R具有与上述相同的含义，摩尔比为（a）：（b）在1：9至9：1的范围内; 和（B）有机溶剂以溶解组分（A）。通过将其中含有的醇作为硅烷化合物的水解产物除去不超过15重量％的含量，可以提高涂料组合物的保存稳定性。

5. 发明授权

US6074962A Method for the formation of silica-based coating film 失效
标题翻译：二氧化硅基涂膜的形成方法
公开(公告)号：US6074962A
公开(公告)日：2000-06-13
申请号：US070881
申请日：1998-05-01
申请人： Yoshinori Sakamoto , Yoshio Hagiwara
发明人： Yoshinori Sakamoto , Yoshio Hagiwara
IPC分类号： C23C18/14 , G02F1/1333 , H01L21/312 , H01L21/316 , B05D3/02 , B05D3/06 , H01L21/31 , H01L21/4763
CPC分类号： H01L21/02126 , G02F1/133345 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/3122 , H01L21/316
摘要： Disclosed is a method for the formation of a silica-based coating film of a relatively large thickness in the manufacturing process of semiconductor devices and liquid crystal display panels by repeating the sequence consisting of coating of the surface with a coating solution containing a partial hydrolysis-condensation product of a trialkoxy silane compound followed by drying until a desired overall thickness of the coating film is obtained prior to a final baking treatment at 350 to 500.degree. C . The invention provides an improvement obtained by an ultraviolet irradiation treatment of the coating film intervening between a sequence of coating and drying and the next sequence of coating and drying so that the adhesion between the coating layers formed by repeating the sequence of coating and drying can be improved along with an advantage of absence of pinholes in the coating film.
摘要翻译：本发明公开了一种在半导体器件和液晶显示面板的制造工艺中形成厚度相对较大的二氧化硅系涂膜的方法，其中，通过重复由包含部分水解反应器的涂布液，三醇烷氧基硅烷化合物的缩合产物，然后在350-500℃下进行最终烘烤处理之前，直到获得所需的涂膜总厚度为止。本发明提供了通过在涂布和干燥顺序之间的涂膜的紫外线照射处理和下一个涂布和干燥顺序的紫外线照射处理而获得的改进，使得通过重复涂布和干燥顺序形成的涂层之间的粘合力可以是改善了涂膜中没有针孔的优点。

6. 发明授权

US5762697A Coating solution for silica-based coating film and method for the preparation thereof 失效
标题翻译：二氧化硅系涂膜用涂布液及其制备方法
公开(公告)号：US5762697A
公开(公告)日：1998-06-09
申请号：US749845
申请日：1996-11-15
申请人： Yoshinori Sakamoto , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Yoshinori Sakamoto , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： C08G77/06 , C08J3/09 , C09D183/04 , H01L21/316 , C09D183/06
CPC分类号： C08J3/095 , C08G77/06 , C09D183/04 , C08J2383/04
摘要： Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.
摘要翻译：提出了用于在半导体器件的制造工艺中使用的基板表面上形成二氧化硅基涂膜的涂布溶液以及涂布溶液的方法，其表现出优异的储存稳定性而没有凝胶化，并且能够形成即使当涂膜具有相对较大的厚度时也由于诸如裂纹形成等气体的析出而无法解决的二氧化硅系涂膜。通过加入特定量的水，然后除去由三烷氧基硅烷的水解反应形成的醇，通过溶解在规定浓度的丙二醇二甲醚中的三烷氧基硅烷如三乙氧基硅烷等水解反应制备涂布溶液，蒸馏到使涂布溶液中的醇的含量不超过10重量％，优选3重量％的程度。

7. 发明授权

US4155762A Liquid developer for binary diazo copying materials 失效
标题翻译：双重复印材料的液体显影剂
公开(公告)号：US4155762A
公开(公告)日：1979-05-22
申请号：US900411
申请日：1978-04-27
申请人： Tsutomu Matsuda , Yoshio Hagiwara , Yoichi Arai , Takeo Hirabayashi
发明人： Tsutomu Matsuda , Yoshio Hagiwara , Yoichi Arai , Takeo Hirabayashi
IPC分类号： G03C5/18 , G03C1/58 , G03C1/52 , G03C1/64
CPC分类号： G03C5/18
摘要： A liquid developer for use in developing binary diazo copying materials which consists essentially of an alkali metal salt of an aminoacid and/or an alkaline earth metal salt of an aminoacid.
摘要翻译：用于开发二元重氮复制材料的液体显影剂，其基本上由氨基酸的碱金属盐和/或氨基酸的碱土金属盐组成。

8. 发明授权

US06338868B1 Method for the formation of a siliceous coating film 有权
标题翻译：形成硅质涂膜的方法
公开(公告)号：US06338868B1
公开(公告)日：2002-01-15
申请号：US09733948
申请日：2000-12-12
申请人： Tatsuhiko Shibuya , Yoshio Hagiwara
发明人： Tatsuhiko Shibuya , Yoshio Hagiwara
IPC分类号： B05D302
CPC分类号： H01L21/3125 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1283 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , Y10T428/12556
摘要： Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature higher than 500° C. without excessive diffusion of dopant through the source layer or drain layer of the semiconductor device. The method comprises the steps of: coating the substrate surface with a coating solution containing a modified polysilazane which is a reaction product of a polysilazane and a dialkyl alkanol amine, drying the coating layer, subjecting the coating layer to a first baking treatment at 350-450° C. for 10-60 minutes and subjecting the layer to a second baking treatment at 550-800° C. for 0.5-60 minutes.
摘要翻译：公开了一种形成二氧化硅涂膜的方法，该二氧化硅涂膜在基板的表面上具有非常高的耐龟裂性的极高的耐热性，例如具有多晶硅的电路布线层以承受更高的温度超过500℃，没有掺杂剂过度扩散通过半导体器件的源极层或漏极层。该方法包括以下步骤：用含有聚硅氮烷（聚硅氮烷和二烷基链烷醇胺的反应产物）的改性聚硅氮烷的涂布溶液涂布基材表面，干燥该涂层，在350℃下进行第一次烘烤处理， 450℃10-60分钟，并在550-800℃下对该层进行第二次烘烤处理0.5-60分钟。

9. 发明授权

US5614271A Method for the formation of a silica-based coating film 失效
标题翻译：形成二氧化硅基涂膜的方法
公开(公告)号：US5614271A
公开(公告)日：1997-03-25
申请号：US692187
申请日：1996-08-05
申请人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： B05D3/06 , B05D7/00 , B05D7/24 , C04B41/50 , C09D183/00 , C09D183/16 , C23C18/12 , C23C18/14 , H01L21/316 , B29C71/02
CPC分类号： H01L21/316 , C04B41/5035 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C04B2111/00844
摘要： Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.
摘要翻译：提出了在半导体器件的制造中在硅晶片等基板的表面上形成二氧化硅类涂膜的改进方法，其中通过用含聚硅氮烷的涂布溶液涂布基板表面，随后将涂层转化聚硅氮烷层形成二氧化硅基涂膜。该方法包括以规定的加热速度按照加热方案干燥聚硅氮烷的涂层，连续或逐步升高温度至240℃至350℃，然后在远紫外光的温度下进行辐射处理 240℃至350℃，然后在350℃至800℃下进行烘烤处理。

10. 发明授权

US08021968B2 Susceptor and method for manufacturing silicon epitaxial wafer 有权
标题翻译：受体和制造硅外延晶片的方法
公开(公告)号：US08021968B2
公开(公告)日：2011-09-20
申请号：US12452862
申请日：2008-07-30
申请人： Tsuyoshi Nishizawa , Yoshio Hagiwara , Hideki Hariya
发明人： Tsuyoshi Nishizawa , Yoshio Hagiwara , Hideki Hariya
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/6875 , H01L21/68757
摘要： Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 μm or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 μm or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.
摘要翻译：提供一种用于制造外延晶片的感受体13，其在安装面上安装有硅基板W的网状槽13b，其中在安装面上形成有碳化硅的涂层H，涂层在中心线平均粗糙度Ra和在形成涂层H时产生的突起13p的最大高度为5μm以下的表面粗糙度为1μm以上。因此，防止诸如翘曲和滑动的缺陷以及硅衬底对基座的粘附。

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