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1. 发明授权

US4585512A Method for making seed crystals for single-crystal semiconductor devices 失效
标题翻译：制造单晶半导体器件晶种的方法
公开(公告)号：US4585512A
公开(公告)日：1986-04-29
申请号：US574537
申请日：1984-01-27
申请人： Yoshinori Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
发明人： Yoshinori Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
IPC分类号： C30B13/22 , C30B13/34 , H01L21/20 , H01L21/263
CPC分类号： H01L21/2022 , C30B13/22 , C30B13/34 , H01L21/2636 , Y10S117/905
摘要： Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.
摘要翻译：使用电子束在基板上的多晶层的区域中制造晶种。该束用于熔化该区域，该区域然后在第一方向上从一端固定到另一端，并沿垂直于第一方向的第二方向向外朝向边缘固化。可以使用几种不同的技术来促进固化方向。可以不均匀地加热该区域，然后冷却以保持所需的温度分布。该区域也可以不均匀地冷却以提供所需的温度分布。可以使用通过电子束控制在该区域中沉积的能量的装置，该区域可以被不均匀地加热。

2. 发明授权

US4549913A Wafer construction for making single-crystal semiconductor device 失效
标题翻译：晶圆制造单晶半导体器件
公开(公告)号：US4549913A
公开(公告)日：1985-10-29
申请号：US574535
申请日：1984-01-27
申请人： Yoshinori Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
发明人： Yoshinori Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
IPC分类号： C30B13/22 , C30B13/34 , H01L21/20 , H01L21/263 , H01L21/324 , H01L23/28
CPC分类号： C30B13/34 , C30B13/22 , H01L21/2022 , H01L21/2636 , H01L21/324 , Y10T428/12528
摘要： Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. The desired cooling pattern is established by providing a thermal layer under the polycrystalline layer, which thermal layer is used to provide different rates of heat conduction therethrough in different parts of the thermal layer. A large, single-crystal device can be made by providing an operating layer of polycrystalline material in contact with the seed, melting the operating layer and recrystallizing it so that its solidification proceeds from the seed. The thermal layer can be used to ensure the desired direction of resolidification by providing different rates of heat conduction therethrough in different parts of the thermal layer.
摘要翻译：晶种通过熔化该区域而在基底上的多晶层的区域中制成，然后冷却，使得其在第一方向上从一端固定到另一端，并沿垂直于第一方向的第二方向朝向边缘。通过在多晶层下提供热层来建立所需的冷却模式，该热层用于在热层的不同部分中提供不同的热传导速率。可以通过提供与种子接触的多晶材料的操作层，熔化操作层并重结晶以使其固化从种子进行而制成大型单晶器件。热层可用于通过在热层的不同部分提供不同的热传导速率来确保所需的再凝固方向。

3. 发明授权

US4564403A Single-crystal semiconductor devices and method for making them 失效
标题翻译：单晶半导体器件及其制造方法
公开(公告)号：US4564403A
公开(公告)日：1986-01-14
申请号：US574571
申请日：1984-01-27
申请人： Yoshinari Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
发明人： Yoshinari Hayafuji , Akashi Sawada , Setsuo Usui , Akikazu Shibata
IPC分类号： C30B13/22 , C30B13/34 , H01L21/20 , H01L21/263 , H01L21/208
CPC分类号： H01L21/2636 , C30B13/22 , C30B13/34 , H01L21/2022 , Y10S117/905 , Y10T428/12528
摘要： A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.
摘要翻译：一个大的单晶半导体器件由具有多晶或无定形材料层的衬底制成，通过将该层的一部分暴露于电子束以熔化该区域，然后从一端固化到另一端在第一方向上并且沿着与第一方向垂直的第二方向朝向边缘向外，以在该区域中形成单晶种子。在与种子接触的基板上的多晶或非晶材料的操作层用具有条状构造的电子束扫描。光束重熔一部分种子，并通过从种子进行横向外延重结晶在该层中产生作为单晶重结晶的熔融区。

4. 发明授权

US06953754B2 Functional device and method of manufacturing the same 失效
标题翻译：功能器件及其制造方法
公开(公告)号：US06953754B2
公开(公告)日：2005-10-11
申请号：US10478888
申请日：2002-06-04
申请人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
IPC分类号： B32B7/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/822 , H01L27/04 , H01L29/786 , H01L31/04 , H01L21/31
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78675 , H01L29/78678
摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.
摘要翻译：本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致在功能层（14）中没有裂纹或分离。有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。

5. 发明申请

US20050092358A1 Optical energy conversion apparatus 审中-公开
标题翻译：光能转换装置
公开(公告)号：US20050092358A1
公开(公告)日：2005-05-05
申请号：US10999049
申请日：2004-11-29
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L31/00 , H01L31/0368
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

6. 发明授权

US06794277B2 Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device 失效
标题翻译：掺杂半导体层的方法，薄膜半导体器件的制造方法以及薄膜半导体器件
公开(公告)号：US06794277B2
公开(公告)日：2004-09-21
申请号：US10204167
申请日：2002-10-23
申请人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
发明人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
IPC分类号： H01L2126
CPC分类号： H01L29/66757 , H01L21/223 , H01L21/2236 , H01L21/268 , H01L29/78621 , Y10S438/914 , Y10S438/923
摘要： A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.
摘要翻译：即使使用低耐热性基板，也可以在优异的控制下形成浓度较低的杂质扩散区域。在掺杂半导体层时，在半导体层（21）的表面的一部分上形成诸如能量束通过的侧壁（24）的掩模，掺杂离子（25）被吸附在表面除了形成有掩模的区域之外的半导体层（21）和能量束EBL被照射到具有形成的掩模的半导体层（21）上以将掺杂剂离子引入到半导体层（21）中。在掩模的下部，这样的侧壁（24）发生横向扩散，并且在优异的控制下可以以优异的再现性形成较低浓度的杂质扩散区域。

7. 发明授权

US06410412B1 Methods for fabricating memory devices 失效
标题翻译：制造存储器件的方法
公开(公告)号：US06410412B1
公开(公告)日：2002-06-25
申请号：US09663006
申请日：2000-09-15
申请人： Kenichi Taira , Noriyuki Kawashima , Takashi Noguchi , Dharam Pal Gosain , Setsuo Usui
发明人： Kenichi Taira , Noriyuki Kawashima , Takashi Noguchi , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L214763
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/66757 , H01L29/7881 , Y10S438/927
摘要： Methods for fabricating memory devices having a multi-dot floating gate ensuring a desirable crystallization of a semiconductor film without ruining the flatness of the surface of the polycrystallized silicon layer and a tunnel oxide film, allowing desirable semiconductor dots to be produced, and allowing production of the memory devices having a multi-dot floating gate with ease and at low costs even when a substrate is made of glass or plastic. Such a method for fabricating memory devices includes steps for forming on a substrate a semiconductor film and treating said semiconductor film by a first laser annealing so as to have a polycrystalline structure; forming on the semiconductor film a semiconductor dot forming film having a non-stoichiometric composition with an excessive content of a semiconductor element; and dispersing semiconductor dots within the semiconductor dot forming film by a second laser annealing thereby to produce semiconductor dots; in which a pulse energy density of the laser used for the first laser annealing is larger than a pulse energy density of the laser used for the second laser annealing.
摘要翻译：用于制造具有多点浮置栅极的存储器件的方法，其确保半导体膜的期望结晶，而不破坏多晶硅层的表面的平坦度和隧道氧化物膜，从而允许产生期望的半导体点，并且允许存储器件具有多点浮置栅极，即使当衬底由玻璃或塑料制成时，其容易且成本低廉。这种用于制造存储器件的方法包括以下步骤：在衬底上形成半导体膜并通过第一激光退火处理所述半导体膜以具有多晶结构; 在半导体膜上形成具有半导体元件含量过多的非化学计量组成的半导体点形成膜; 并通过第二激光退火将半导体点分散在半导体点形成膜内，从而产生半导体点; 其中用于第一激光退火的激光器的脉冲能量密度大于用于第二激光退火的激光器的脉冲能量密度。

8. 发明授权

US06716664B2 Functional device and method of manufacturing the same 失效
标题翻译：功能器件及其制造方法
公开(公告)号：US06716664B2
公开(公告)日：2004-04-06
申请号：US10391811
申请日：2003-03-20
申请人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L5140
CPC分类号： H01L29/78603 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L27/1281 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate (11) made of an organic material such as polyethylene terephthalate, and a functional layer (14) made of polysilicon is formed thereon. The functional layer (14) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate (11) and the substrate (11) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate (11) and the functional layer (14) is absorbed by the low-temperature softening layer (12), so that no cracks and peeling occurs in the functional layer (14). The low-temperature softening layer (12) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate (11) and the functional layer (14), a laser beam of higher intensity can be irradiated.
摘要翻译：公开了一种没有破裂和功能特性优异的功能元件及其制造方法。在由诸如聚对苯二甲酸乙二醇酯的有机材料制成的基板（11）上依次形成低温软化层（12）和耐热层（13），并且由多晶硅制成的功能层（14）形成在其上。通过用激光束照射使作为前体层的非晶硅层结晶来形成功能层（14）。当施加激光束时，热量传递到基板（11），并且基板（11）趋于膨胀。然而，由基板（11）和功能层（14）之间的热膨胀系数的差异引起的应力被低温软化层（12）吸收，从而在功能层中不会发生裂纹和剥离（14）。低温软化层（12）优选由含有丙烯酸树脂的聚合材料制成。通过在基板（11）和功能层（14）之间适当地插入金属层和耐热层，可以照射更高强度的激光束。

9. 发明授权

US06548830B1 Semiconductor device formed of single crystal grains in a grid pattern 有权
标题翻译：半导体器件由栅格图案中的单晶晶粒形成
公开(公告)号：US06548830B1
公开(公告)日：2003-04-15
申请号：US09616685
申请日：2000-07-14
申请人： Takashi Noguchi , Yasuhiro Kanaya , Masafumi Kunii , Yuji Ikeda , Setsuo Usui
发明人： Takashi Noguchi , Yasuhiro Kanaya , Masafumi Kunii , Yuji Ikeda , Setsuo Usui
IPC分类号： H01L2976
CPC分类号： H01L21/02686 , B82Y10/00 , H01L21/02532 , H01L21/02598 , H01L21/02609 , H01L21/02691 , H01L21/2026 , H01L21/28273 , H01L29/66765 , H01L29/78678 , Y10T428/24372
摘要： A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.
摘要翻译：一种半导体器件，包括源极/漏极区域和形成在由硅单晶颗粒组成的硅薄膜中的沟槽区域，所述硅单晶晶体每个近似矩形并且以基板上的网格图案布置，其中硅单晶晶粒的基体的表面的选择取向大致为<100>方向。

10. 发明授权

US06376290B1 Method of forming a semiconductor thin film on a plastic substrate 失效
标题翻译：在塑料基板上形成半导体薄膜的方法
公开(公告)号：US06376290B1
公开(公告)日：2002-04-23
申请号：US09116119
申请日：1998-07-16
申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
发明人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78603
摘要： A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. It is possible to increase energy intensity of energy beam radiated for polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译：提供了一种用于形成半导体薄膜的方法，该半导体薄膜不会损坏具有用于完美多晶化的最佳能量值的脉冲激光束的辐射。为了形成非晶硅薄膜，以用作去除挥发性污染物如抗蚀剂的脉冲激光束作为基底和绝缘层的塑料基板的表面各自辐射，作为预处理。因此防止了由基底衬底发出的气体和由挥发性污染物引起的绝缘层引起的膜损伤。在基板上形成包括阻气层和难熔缓冲层的保护层。从而防止了从基板到非晶硅膜的气体渗透。也可以防止能量束辐射产生的热量传导到基板上。可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。

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