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1. 发明授权

US06376290B1 Method of forming a semiconductor thin film on a plastic substrate 失效
标题翻译：在塑料基板上形成半导体薄膜的方法
公开(公告)号：US06376290B1
公开(公告)日：2002-04-23
申请号：US09116119
申请日：1998-07-16
申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
发明人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78603
摘要： A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. It is possible to increase energy intensity of energy beam radiated for polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译：提供了一种用于形成半导体薄膜的方法，该半导体薄膜不会损坏具有用于完美多晶化的最佳能量值的脉冲激光束的辐射。为了形成非晶硅薄膜，以用作去除挥发性污染物如抗蚀剂的脉冲激光束作为基底和绝缘层的塑料基板的表面各自辐射，作为预处理。因此防止了由基底衬底发出的气体和由挥发性污染物引起的绝缘层引起的膜损伤。在基板上形成包括阻气层和难熔缓冲层的保护层。从而防止了从基板到非晶硅膜的气体渗透。也可以防止能量束辐射产生的热量传导到基板上。可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。

2. 发明授权

US06285055B1 Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device 有权
标题翻译：存储器件及其制造方法，以及半导体器件的集成电路及其制造方法
公开(公告)号：US06285055B1
公开(公告)日：2001-09-04
申请号：US09381987
申请日：1999-11-29
申请人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
发明人： Dharam Pal Gosain , Kazumasa Nomoto , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Takashi Noguchi , Yoshifumi Mori
IPC分类号： H01L29788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/8221 , H01L21/84 , H01L27/1203 , H01L29/7883 , H01L29/792
摘要： While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.
摘要翻译：虽然存储区域15具有许多分散的微粒（点）（15a），但是微粒（15a）的表面密度被设定为高于在隧道绝缘膜（14a）中产生的结构孔（针孔）的表面密度，或存储区域（15）中的微粒（15a）的数量设定为五个以上。虽然通过表面粗糙度为0.1nm至100nm的多晶硅层（13）形成导电区域（13c），但存储区域（15）中的微粒（15a）的数量被设定为大于数字的导电区域（13c）中的晶粒。即使当在隧道绝缘膜（14a）中出现诸如针孔的缺陷，并且存储在一部分微粒中的电荷泄漏时，存储在形成于不发生缺陷的区域中的微粒中的电荷也不会泄漏。因此，信息可以持续很长时间。

3. 发明授权

US06794673B2 Plastic substrate for a semiconductor thin film 失效
标题翻译：半导体薄膜用塑料基板
公开(公告)号：US06794673B2
公开(公告)日：2004-09-21
申请号：US10011736
申请日：2001-12-11
申请人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
发明人： Dharam Pal Gosain , Jonathan Westwater , Miyako Nakagoe , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L2906
CPC分类号： H01L29/66765 , H01L29/78603
摘要： An amorphous silicon thin film includes a plastic substrate as a base, and insulating layers are formed thereon each radiated with a pulse laser beam which removes volatile contaminants like a resist as a pretreatment. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. it is possible to increase energy intensity of energy beam radiated for the polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
摘要翻译：非晶硅薄膜包括作为基底的塑料基板，并且在其上形成绝缘层，各自用脉冲激光束辐射，该脉冲激光束除去作为预处理的抗蚀剂等挥发性污染物。在基板上形成包括阻气层和难熔缓冲层的保护层。从而防止了从基板到非晶硅膜的气体渗透。也可以防止能量束辐射产生的热量传导到基板上。可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。

4. 发明授权

US06645837B2 Method of manufacturing semiconductor device 失效
公开(公告)号：US06645837B2
公开(公告)日：2003-11-11
申请号：US09871033
申请日：2001-05-31
申请人： Dharam Pal Gosain , Kazumasa Nomoto , Akio Machida , Miyako Nakagoe , Setsuo Usui
发明人： Dharam Pal Gosain , Kazumasa Nomoto , Akio Machida , Miyako Nakagoe , Setsuo Usui
IPC分类号： H01L21425
CPC分类号： H01L29/66757 , H01L27/12
摘要： A polycrystalline silicon layer is formed on a substrate. An insulating layer and a gate electrode are formed on the polycrystalline silicon layer. Then, a channel region, a source region and a drain region are formed in a self-aligned manner by doping an impurity in the polycrystalline silicon layer using the gate electrode as a mask. Then, an energy absorption layer is formed so as to cover the entire substrate and a pulsed laser beam is irradiated from the energy absorption layer side. The energy of the pulsed laser beam is almost completely absorbed in the energy absorption layer and a heat treatment is indirectly performed on the underlying layers by radiating the heat. In other words, activation of the impurity and removal of defects in the insulating layer are performed at the same time without damaging the substrate by the heat.

5. 发明授权

US06461917B2 Memory device, manufacturing method thereof and integrated circuit thereof 失效
标题翻译：存储器件及其制造方法及其集成电路
公开(公告)号：US06461917B2
公开(公告)日：2002-10-08
申请号：US09888862
申请日：2001-06-25
申请人： Kazumasa Nomoto , Dharam Pal Gosain , Setsuo Usui , Takashi Noguchi
发明人： Kazumasa Nomoto , Dharam Pal Gosain , Setsuo Usui , Takashi Noguchi
IPC分类号： H01L218247
CPC分类号： H01L27/1203 , B82Y10/00 , H01L21/84 , H01L27/115 , H01L29/7883
摘要： A memory device, a manufacturing method thereof, and an integrated circuit thereof are provided for storing information over a long period of time even if the memory device is manufactured at low temperatures. On a substrate made of glass, etc., a memory transistor and a selection transistor are formed, with a silicon nitride film and a silicon dioxide film in between. The memory transistor and the selection transistor are connected in series at a second impurity region. The conduction region for memory of the memory transistor is made of non-single crystal silicon and a storage region comprises a plurality of dispersed particulates made of non-single crystal silicon. Therefore, electrical charges can be stored partially if a tunnel insulating film has any defects. The tunnel insulating film is formed by exposing the surface of the conduction region for memory to the ionized gas containing oxygen atoms.
摘要翻译：提供了一种存储器件，其制造方法及其集成电路，用于长时间存储信息，即使存储器件在低温下制造。在由玻璃等制成的基板上，形成存储晶体管和选择晶体管，其间具有氮化硅膜和二氧化硅膜。存储晶体管和选择晶体管在第二杂质区域串联连接。用于存储晶体管的存储器的导电区域由非单晶硅制成，并且存储区域包括由非单晶硅制成的多个分散的微粒。因此，如果隧道绝缘膜有任何缺陷，则可以部分地存储电荷。隧道绝缘膜通过将用于记忆的导电区域的表面暴露于含有氧原子的电离气体而形成。

6. 发明授权

US06274903B1 Memory device having a storage region is constructed with a plurality of dispersed particulates 失效
标题翻译：具有存储区域的存储器件由多个分散的颗粒构成
公开(公告)号：US06274903B1
公开(公告)日：2001-08-14
申请号：US09404479
申请日：1999-09-24
申请人： Kazumasa Nomoto , Dharam Pal Gosain , Setsuo Usui , Takashi Noguchi
发明人： Kazumasa Nomoto , Dharam Pal Gosain , Setsuo Usui , Takashi Noguchi
IPC分类号： H01L29788
CPC分类号： H01L27/1203 , B82Y10/00 , H01L21/84 , H01L27/115 , H01L29/7883
摘要： A memory device, a manufacturing method thereof, and an integrated circuit thereof are provided for storing information over a long period of time even if the memory device is manufactured at low temperatures. On a substrate made of glass, etc., a memory transistor and a selection transistor are formed, with a silicon nitride film and a silicon dioxide film in between. The memory transistor and the selection transistor are connected in series at a second impurity region. The conduction region for memory of the memory transistor is made of non-single crystal silicon and a storage region comprises a plurality of dispersed particulates made of non-single crystal silicon. Therefore, electrical charges can be stored partially if a tunnel insulating film has any defects. The tunnel insulating film is formed by exposing the surface of the conduction region for memory to the ionized gas containing oxygen atoms.
摘要翻译：提供了一种存储器件，其制造方法及其集成电路，用于长时间存储信息，即使存储器件在低温下制造。在由玻璃等制成的基板上，形成存储晶体管和选择晶体管，其间具有氮化硅膜和二氧化硅膜。存储晶体管和选择晶体管在第二杂质区域串联连接。用于存储晶体管的存储器的导电区域由非单晶硅制成，并且存储区域包括由非单晶硅制成的多个分散的微粒。因此，如果隧道绝缘膜有任何缺陷，则可以部分地存储电荷。隧道绝缘膜通过将用于记忆的导电区域的表面暴露于含有氧原子的电离气体而形成。

7. 发明授权

US07199303B2 Optical energy conversion apparatus 失效
标题翻译：光能转换装置
公开(公告)号：US07199303B2
公开(公告)日：2007-04-03
申请号：US10221719
申请日：2001-03-13
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01N6/00
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

8. 发明申请

US20050092358A1 Optical energy conversion apparatus 审中-公开
标题翻译：光能转换装置
公开(公告)号：US20050092358A1
公开(公告)日：2005-05-05
申请号：US10999049
申请日：2004-11-29
申请人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
发明人： Akio Machida , Setsuo Usui , Kazumasa Nomoto
IPC分类号： H01L31/00 , H01L31/0368
CPC分类号： H01L31/03682 , Y02E10/546
摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.
摘要翻译：光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

9. 发明申请

US20100264410A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 失效
标题翻译：薄膜晶体管和制造薄膜晶体管的方法
公开(公告)号：US20100264410A1
公开(公告)日：2010-10-21
申请号：US12757605
申请日：2010-04-09
申请人： Kazumasa Nomoto , Mao Katsuhara , Akira Yumoto
发明人： Kazumasa Nomoto , Mao Katsuhara , Akira Yumoto
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/102 , H01L51/0023 , H01L51/0545
摘要： A method for manufacturing a thin film transistor includes the steps of covering a gate electrode patterned on a substrate with a gate insulating film, forming an organic semiconductor layer and an electrode film on the gate insulating film in that lamination order, and forming a negative type photoresist film on the substrate provided with the organic semiconductor layer and the electrode film and forming a resist pattern, which serves as a mask for forming a source-drain by etching the electrode film, through back surface exposure from the substrate side by using the gate electrode as a light-shielding mask and the following development treatment.
摘要翻译：一种制造薄膜晶体管的方法包括以栅层绝缘膜覆盖在基板上图案化的栅电极，以栅层绝缘膜形成有机半导体层和电极膜的步骤，并且形成负型在设置有有机半导体层的基板和电极膜上形成抗蚀剂图案，并且通过使用栅极从基板侧通过背面曝光形成用作通过蚀刻电极膜形成源极 - 漏极的掩模的抗蚀剂图案电极作为遮光掩模，并进行以下显影处理。

10. 发明申请

US20070026554A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070026554A1
公开(公告)日：2007-02-01
申请号：US11458573
申请日：2006-07-19
申请人： Kazumasa Nomoto
发明人： Kazumasa Nomoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L51/0004 , H01L51/0005 , H01L51/0022 , H01L51/0541 , H01L51/0545 , H01L2251/105
摘要： A semiconductor device and process for producing same are provided. The process for producing a semiconductor device includes a first embossing step of pressing a stamp having a relief pattern onto a surface of a substrate to form a depression pattern on the surface of the substrate; a second step of feeding an application material composed of a semiconductor material or a conductive material into the depression pattern by printing; and a third step of curing the application material fed by printing.
摘要翻译：提供半导体器件及其制造方法。制造半导体器件的方法包括：第一压花步骤，将具有浮雕图案的印模压印到基板的表面上，以在基板的表面上形成凹陷图案; 第二步，通过印刷将由半导体材料或导电材料构成的涂布材料进料到凹陷图案中; 以及固化通过印刷进料的涂布材料的第三步骤。

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