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1. 发明授权

US08134154B2 Thin film transistor and display 有权
标题翻译：薄膜晶体管和显示屏
公开(公告)号：US08134154B2
公开(公告)日：2012-03-13
申请号：US12392153
申请日：2009-02-25
申请人： Dharam Pal Gosain , Tsutomu Tanaka , Narihiro Morosawa
发明人： Dharam Pal Gosain , Tsutomu Tanaka , Narihiro Morosawa
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译：提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。薄膜晶体管包括：栅电极; 活性层以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触，所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。

2. 发明申请

US20090230390A1 THIN FILM TRANSISTOR AND DISPLAY 有权
标题翻译：薄膜晶体管和显示器
公开(公告)号：US20090230390A1
公开(公告)日：2009-09-17
申请号：US12392153
申请日：2009-02-25
申请人： Dharam Pal Gosain , Tsutomu Tanaka , Narihiro Morosawa
发明人： Dharam Pal Gosain , Tsutomu Tanaka , Narihiro Morosawa
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66765 , H01L29/78651
摘要： A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.
摘要翻译：提供能够可靠地防止光进入有源层的薄膜晶体管，以及包括薄膜晶体管的显示器。薄膜晶体管包括：栅电极; 活性层以及栅极绝缘膜，其配置在所述栅电极和所述有源层之间，所述栅极绝缘膜包括第一绝缘膜，第一光吸收层和第二绝缘膜，所述第一绝缘膜与所述栅极电极接触，所述第一光吸收层与所述第一绝缘膜接触并由吸收420nm以下的光的材料制成，所述第二绝缘膜布置在所述第一光吸收层和所述有源层之间。

3. 发明申请

US20090194760A1 Memory element and display device 有权
标题翻译：存储元件和显示设备
公开(公告)号：US20090194760A1
公开(公告)日：2009-08-06
申请号：US12320307
申请日：2009-01-23
申请人： Dharam Pal Gosain , Makoto Takatoku , Yoshiharu Nakajima , Tsutomu Tanaka
发明人： Dharam Pal Gosain , Makoto Takatoku , Yoshiharu Nakajima , Tsutomu Tanaka
IPC分类号： H01L45/00 , H01L29/786
CPC分类号： H01L27/12 , G02F1/1362 , G09G3/3648 , G09G2300/088 , G09G2330/021 , H01L27/1214 , H01L27/24
摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.
摘要翻译：这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少一个氧化物膜层设置在一个导电层和另一个导电层之间。

4. 发明申请

US20090121605A1 METHOD OF MANUFACTURING TUBULAR CARBON MOLECULE AND TUBULAR CARBON MOLECULE, METHOD OF MANUFACTURING RECORDING APPARATUS AND RECORDING APPARATUS, METHOD OF MANUFACUTRING FIELD ELECTRON EMISSION DEVICE AND FIELD ELECTRON EMISSION DEVICE 失效
标题翻译：制造管状碳分子和管状碳分子的方法，制造记录装置和记录装置的方法，制造场致电子发射装置和场电子发射装置的方法
公开(公告)号：US20090121605A1
公开(公告)日：2009-05-14
申请号：US12353610
申请日：2009-01-14
申请人： Dharam Pal Gosain , Hisashi Kajiura , Ryuichiro Maruyama , Masashi Shiraishi , Houjin Huang , Koji Kodono , Shigeaki Wachi , Masafumi Ata
发明人： Dharam Pal Gosain , Hisashi Kajiura , Ryuichiro Maruyama , Masashi Shiraishi , Houjin Huang , Koji Kodono , Shigeaki Wachi , Masafumi Ata
IPC分类号： H01J1/02 , H01J9/02
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , H01J1/304 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
摘要翻译：提供了一种制造能够以更细的间隔规则地对准碳纳米管的管状碳分子的方法。通过使用根据调制的热分布（11）的熔化，将催化剂布置在由诸如硅（Si）的半导体和包括铁（Fe））作为催化剂的材料基板（10）上。热分布（11）例如通过衍射光栅（13）衍射能量束（12）而形成。作为布置催化剂的方法，例如，铁可以在对应于热分布（11）的位置中以平面形状或突起形状沉积，或者沉积的铁可以用作主转移到另一个基质。通过使用所配置的催化剂生长碳纳米管。生长的碳纳米管可以用作记录装置，场电子发射装置，FED等。

5. 发明申请

US20080315746A1 Method of Manufacturing Fine Structure, Fine Structure, Display Unit, Method of Manufacturing Recoding Device, and Recoding Device 审中-公开
标题翻译：制造精细结构，精细结构，显示单元，制造再编码装置的方法和重新编码装置的方法
公开(公告)号：US20080315746A1
公开(公告)日：2008-12-25
申请号：US10570077
申请日：2004-08-31
申请人： Dharam Pal Gosain , Hisashi Kajiura , Yosuke Murakami , Masafumi Ata
发明人： Dharam Pal Gosain , Hisashi Kajiura , Yosuke Murakami , Masafumi Ata
IPC分类号： H01J17/04 , B32B3/20 , G11B5/64 , H01L21/306
CPC分类号： H01J9/025 , G11B5/855 , H01J1/3042 , Y10T428/24744
摘要： A method of manufacturing a fine structure capable of accurately controlling formation positions of tubular structures made of carbon or the like is provided. Column-shaped protrusions (11) are formed on a substrate (10). Next, a catalyst material (20) such as iron (Fe) is adhered to the substrate (10). Subsequently, by providing the substrate (10) with heat treatment, the catalyst material (20) is melted and agglomerated on the side faces (11A) of the protrusions (11), and thereby cyclic catalyst patterns made of the catalyst material (20) are formed on the side faces (11A) of the protrusions (11). After that, tubular structures (30) in a state of tube are grown by using the catalyst patterns. The tubular structures (30) become carbon (nano) pipes, which are raised from the side faces (11A) of the protrusions (11) and whose ends (30A) are opened. The tubular structures (30) can be formed correspondingly to the positions of the protrusions (11) accurately.
摘要翻译：提供一种能够精确控制由碳等制成的管状结构的形成位置的精细结构体的制造方法。柱状突起（11）形成在基板（10）上。接下来，将诸如铁（Fe）的催化剂材料（20）粘合到基板（10）上。随后，通过使基板（10）进行热处理，催化剂材料（20）在突起（11）的侧面（11A）上熔化并凝聚，由此由催化剂材料（20）制成的环状催化剂图案，形成在突起（11）的侧面（11A）上。之后，通过使用催化剂图案生长处于管状状的管状结构（30）。管状结构（30）成为从突起（11）的侧面（11A）升起并且其端部（30A）打开的碳（纳米）管。可以精确地对应于突起（11）的位置形成管状结构（30）。

6. 发明授权

US06953754B2 Functional device and method of manufacturing the same 失效
标题翻译：功能器件及其制造方法
公开(公告)号：US06953754B2
公开(公告)日：2005-10-11
申请号：US10478888
申请日：2002-06-04
申请人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Setsuo Usui
IPC分类号： B32B7/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/822 , H01L27/04 , H01L29/786 , H01L31/04 , H01L21/31
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78675 , H01L29/78678
摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.
摘要翻译：本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致在功能层（14）中没有裂纹或分离。有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。

7. 发明授权

US06794277B2 Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device 失效
标题翻译：掺杂半导体层的方法，薄膜半导体器件的制造方法以及薄膜半导体器件
公开(公告)号：US06794277B2
公开(公告)日：2004-09-21
申请号：US10204167
申请日：2002-10-23
申请人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
发明人： Akio Machida , Setsuo Usui , Dharam Pal Gosain
IPC分类号： H01L2126
CPC分类号： H01L29/66757 , H01L21/223 , H01L21/2236 , H01L21/268 , H01L29/78621 , Y10S438/914 , Y10S438/923
摘要： A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.
摘要翻译：即使使用低耐热性基板，也可以在优异的控制下形成浓度较低的杂质扩散区域。在掺杂半导体层时，在半导体层（21）的表面的一部分上形成诸如能量束通过的侧壁（24）的掩模，掺杂离子（25）被吸附在表面除了形成有掩模的区域之外的半导体层（21）和能量束EBL被照射到具有形成的掩模的半导体层（21）上以将掺杂剂离子引入到半导体层（21）中。在掩模的下部，这样的侧壁（24）发生横向扩散，并且在优异的控制下可以以优异的再现性形成较低浓度的杂质扩散区域。

8. 发明授权

US06410412B1 Methods for fabricating memory devices 失效
标题翻译：制造存储器件的方法
公开(公告)号：US06410412B1
公开(公告)日：2002-06-25
申请号：US09663006
申请日：2000-09-15
申请人： Kenichi Taira , Noriyuki Kawashima , Takashi Noguchi , Dharam Pal Gosain , Setsuo Usui
发明人： Kenichi Taira , Noriyuki Kawashima , Takashi Noguchi , Dharam Pal Gosain , Setsuo Usui
IPC分类号： H01L214763
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/66757 , H01L29/7881 , Y10S438/927
摘要： Methods for fabricating memory devices having a multi-dot floating gate ensuring a desirable crystallization of a semiconductor film without ruining the flatness of the surface of the polycrystallized silicon layer and a tunnel oxide film, allowing desirable semiconductor dots to be produced, and allowing production of the memory devices having a multi-dot floating gate with ease and at low costs even when a substrate is made of glass or plastic. Such a method for fabricating memory devices includes steps for forming on a substrate a semiconductor film and treating said semiconductor film by a first laser annealing so as to have a polycrystalline structure; forming on the semiconductor film a semiconductor dot forming film having a non-stoichiometric composition with an excessive content of a semiconductor element; and dispersing semiconductor dots within the semiconductor dot forming film by a second laser annealing thereby to produce semiconductor dots; in which a pulse energy density of the laser used for the first laser annealing is larger than a pulse energy density of the laser used for the second laser annealing.
摘要翻译：用于制造具有多点浮置栅极的存储器件的方法，其确保半导体膜的期望结晶，而不破坏多晶硅层的表面的平坦度和隧道氧化物膜，从而允许产生期望的半导体点，并且允许存储器件具有多点浮置栅极，即使当衬底由玻璃或塑料制成时，其容易且成本低廉。这种用于制造存储器件的方法包括以下步骤：在衬底上形成半导体膜并通过第一激光退火处理所述半导体膜以具有多晶结构; 在半导体膜上形成具有半导体元件含量过多的非化学计量组成的半导体点形成膜; 并通过第二激光退火将半导体点分散在半导体点形成膜内，从而产生半导体点; 其中用于第一激光退火的激光器的脉冲能量密度大于用于第二激光退火的激光器的脉冲能量密度。

9. 发明授权

US08619208B2 Display and method for manufacturing display 有权
标题翻译：显示器和制造显示方法
公开(公告)号：US08619208B2
公开(公告)日：2013-12-31
申请号：US12530801
申请日：2008-09-18
申请人： Dharam Pal Gosain , Tsutomu Tanaka , Makoto Takatoku
发明人： Dharam Pal Gosain , Tsutomu Tanaka , Makoto Takatoku
IPC分类号： G02F1/136 , G02F1/13
CPC分类号： H01L27/1222 , G02F1/1368 , G02F2001/13312 , G06F3/0412 , G06F3/0421 , H01L27/1214 , H01L27/124 , H01L29/66765
摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.
摘要翻译：在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。

10. 发明授权

US07828620B2 Method of manufacturing tubular carbon molecule and tubular carbon molecule, method of manufacturing field electron emission device and field electron emission device, and method of manufacturing display unit and display unit 失效
标题翻译：制造管状碳分子和管状碳分子的方法，制造场致电子发射器件和场电子发射器件的方法以及制造显示单元和显示单元的方法
公开(公告)号：US07828620B2
公开(公告)日：2010-11-09
申请号：US10541936
申请日：2004-01-08
申请人： Dharam Pal Gosain , Hisashi Kajiura , Ryuichiro Maruyama , Masashi Shiraishi , Houjin Huang , Koji Kadono , Shigeaki Wachi , Masafumi Ata
发明人： Dharam Pal Gosain , Hisashi Kajiura , Ryuichiro Maruyama , Masashi Shiraishi , Houjin Huang , Koji Kadono , Shigeaki Wachi , Masafumi Ata
IPC分类号： H01J9/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , H01J1/304 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
摘要翻译：提供了一种制造能够以更细的间隔规则地对准碳纳米管的管状碳分子的方法。通过使用根据调制的热分布（11）的熔化，将催化剂布置在由诸如硅（Si）的半导体和包括铁（Fe））作为催化剂的材料基板（10）上。热分布（11）例如通过衍射光栅（13）衍射能量束（12）而形成。作为布置催化剂的方法，例如，铁可以在对应于热分布（11）的位置中以平面形状或突起形状沉积，或者沉积的铁可以用作主转移到另一个基质。通过使用所配置的催化剂生长碳纳米管。生长的碳纳米管可以用作记录装置，场电子发射装置，FED等。

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