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1. 发明授权

US4563695A Superconducting switching device 失效
标题翻译：超导开关器件
公开(公告)号：US4563695A
公开(公告)日：1986-01-07
申请号：US575273
申请日：1984-01-30
申请人： Yoshinobu Tarutani , Toshikazu Nishino
发明人： Yoshinobu Tarutani , Toshikazu Nishino
IPC分类号： H01L39/22
CPC分类号： H01L39/223 , Y10S505/874
摘要： A superconducting switching device is provided in which a base electrode layer of a sandwich type superconducting tunnel junction and a control line film are formed at the same level. The control line film having a high accuracy pattern can be formed, and the number of overall layers can also be reduced.
摘要翻译：提供了一种超导开关器件，其中夹层型超导隧道结的基极层和控制线膜形成在同一水平。可以形成具有高精度图案的控制线膜，并且还可以减少总层数。

2. 发明授权

US06069369A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US06069369A
公开(公告)日：2000-05-30
申请号：US957732
申请日：1997-10-24
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

3. 发明授权

US5250506A Superconductive switching element with semiconductor channel 失效
标题翻译：具有半导体通道的超导开关元件
公开(公告)号：US5250506A
公开(公告)日：1993-10-05
申请号：US647234
申请日：1991-01-29
申请人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
发明人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
IPC分类号： H01L39/14 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/225 , H01L39/146
摘要： A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.
摘要翻译：一种超导元件，至少包括由氧化物超导体材料构成的第一和第二超导电极以及由位于第一和第二超导电极之间并与第一和第二超导电极相邻设置的氧化物半导体材料构成的半导体膜，其中半导体膜由包含除Pr，Ba和Cu之外的稀土元素作为主要成分的氧化物或包含预定量的Pr以外的稀土元素的氧化物形成，预定量的Pr，Ba和Cu作为主要成分元件。非常精细的尺寸不再需要使用现有的精细制造技术进行制造。

4. 发明授权

US5126315A High Tc superconducting device with weak link between two superconducting electrodes 失效
标题翻译：具有两个超级电极之间的弱连接的高TC超导体器件
公开(公告)号：US5126315A
公开(公告)日：1992-06-30
申请号：US155806
申请日：1988-02-16
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

5. 发明授权

US5729046A Superconducting device having pinning regions 失效
标题翻译：具有钉扎区域的超导装置
公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L39/00
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

6. 发明授权

US5326745A Superconducting device with C-axis orientation perpendicular to current flow 失效
标题翻译：具有C轴取向垂直于电流的超导装置
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L23/48
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

7. 发明授权

US5552375A Method for forming high T.sub.c superconducting devices 失效
标题翻译：形成高Tc超导器件的方法
公开(公告)号：US5552375A
公开(公告)日：1996-09-03
申请号：US192573
申请日：1994-02-07
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：公开了形成超导体的方法，包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流经该超导体的电流的方向。

8. 发明授权

US5380704A Superconducting field effect transistor with increased channel length 失效
标题翻译：超导场效应晶体管具有增加的沟道长度
公开(公告)号：US5380704A
公开(公告)日：1995-01-10
申请号：US113006
申请日：1993-08-30
申请人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
发明人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
IPC分类号： H01L29/43 , H01L29/49 , H01L29/786 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L29/78696 , H01L29/437 , H01L29/4908 , H01L29/78645 , H01L29/7869 , H01L39/146
摘要： Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.
摘要翻译：本发明公开了一种超导场效应晶体管（FET），其至少具有由氧化物正导体膜形成的有源区，由氧化物超导体的膜形成的多个电极，以及控制在氧化物超导体之间流动的电流的装置电极通过有源区。具有比常规超导装置更大的电极距离，其可以通过光刻而容易地制造，而不需要采用特殊技术。

9. 发明授权

US06341145B1 Communication method for broadband digital radio system and broadband digital radio communication terminal 失效
标题翻译：宽带数字无线电系统和宽带数字无线电通信终端的通信方法
公开(公告)号：US06341145B1
公开(公告)日：2002-01-22
申请号：US09041771
申请日：1998-03-13
申请人： Willy Hioe , Toshikazu Nishino
发明人： Willy Hioe , Toshikazu Nishino
IPC分类号： H04L2700
CPC分类号： H04L1/0009 , H04L1/0003 , H04L1/0007 , H04L1/0026
摘要： A broadband radio communication system and method therefore that conducts communication on a plurality of narrowband channels obtained by dividing a broadband channel into a plurality of narrowband channels. The invention provides a first radio communication terminal which sets transmission conditions of at least part of the narrowband channels and transmits a wireless packet on the narrowband channels of which the transmission conditions have been set, and a second radio communication terminal which receives the wireless packet from the first radio communication terminal, measures the line qualities of the narrowband channels and transmits measured line quality information to said first radio communication terminal. The first radio communication terminal receives the line quality information, sets new transmission conditions based on the line quality information, and transmits a wireless packet to the second radio communication terminal through the narrowband channels under the new transmission conditions.
摘要翻译：因此，宽带无线电通信系统和方法在通过将宽带信道划分成多个窄带信道而获得的多个窄带信道上进行通信。本发明提供了一种第一无线电通信终端，其设置至少部分窄带信道的传输条件，并且在已经设置了传输条件的窄带信道上发送无线分组，以及从无线分组接收无线分组的第二无线电通信终端第一无线电通信终端测量窄带信道的线路质量，并将测量的线路质量信息发送到所述第一无线电通信终端。第一无线电通信终端接收线路质量信息，基于线路质量信息设置新的发送条件，并且在新的发送条件下通过窄带信道向第二无线电通信终端发送无线分组。

10. 发明授权

US5442195A Superconducting device including plural superconducting electrodes formed on a normal conductor 失效
标题翻译：超导装置包括形成在正常导体上的多个超导电极
公开(公告)号：US5442195A
公开(公告)日：1995-08-15
申请号：US136984
申请日：1993-10-18
申请人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
发明人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
IPC分类号： H01L39/22 , H01L27/18 , H01L39/24 , B05D5/12 , G11C11/44 , H01B12/00
CPC分类号： H01L27/18 , Y10S505/832
摘要： A superconducting device may include a superconducting weak link equipped with plural superconducting devices that are used as input-output terminals formed on the same plane and at least one current source for applying current to at least one of these superconducting electrodes. A superconducting device suitable for high integration can be realized as it enables structuring of a superconducting weak link 1 equipped with plural superconducting electrodes 101, 102, 103 and 104 that can be used as input-output terminals and changing symmetry of superconducting electrode arrangement through the form of a normal conductor 201 which is forming a superconducting weak link. In addition, when this superconducting device is used as a quasi-particle injection type device, a superconducting device with plural superconducting electrodes that can be used for a gate electrode, drain electrode or control electrode can be realized. Further, a superconducting device equipped with new functions (e.g. motion as a neuron device) which are capable of high integration can be realized by utilizing these characteristics. Furthermore, being a proximity effect type, superconducting weak link has an advantage of realizing an ultra highspeed, low electricity consuming switching device.
摘要翻译：超导装置可以包括配备有多个超导装置的超导弱连接器，所述多个超导装置用作形成在同一平面上的输入 - 输出端子和用于向这些超导电极中的至少一个施加电流的至少一个电流源。可以实现适用于高集成度的超导装置，因为它能够构成配备有可用作输入 - 输出端子的多个超导电极101,102,103和104的超导弱连接件1，并且通过所述超导电极装置改变超导电极装置的对称性形成超导弱连接的正常导体201的形式。此外，当该超导装置用作准粒子注入型装置时，可以实现具有可用于栅电极，漏电极或控制电极的多个超导电极的超导装置。此外，可以通过利用这些特性来实现配备有能够高集成度的新功能（例如作为神经元装置的运动）的超导装置。此外，作为接近效应型，超导弱连接具有实现超高速，低耗电开关器件的优点。

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