专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5380704A Superconducting field effect transistor with increased channel length 失效
标题翻译：超导场效应晶体管具有增加的沟道长度
公开(公告)号：US5380704A
公开(公告)日：1995-01-10
申请号：US113006
申请日：1993-08-30
申请人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
发明人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
IPC分类号： H01L29/43 , H01L29/49 , H01L29/786 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L29/78696 , H01L29/437 , H01L29/4908 , H01L29/78645 , H01L29/7869 , H01L39/146
摘要： Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.
摘要翻译：本发明公开了一种超导场效应晶体管（FET），其至少具有由氧化物正导体膜形成的有源区，由氧化物超导体的膜形成的多个电极，以及控制在氧化物超导体之间流动的电流的装置电极通过有源区。具有比常规超导装置更大的电极距离，其可以通过光刻而容易地制造，而不需要采用特殊技术。

2. 发明授权

US5250506A Superconductive switching element with semiconductor channel 失效
标题翻译：具有半导体通道的超导开关元件
公开(公告)号：US5250506A
公开(公告)日：1993-10-05
申请号：US647234
申请日：1991-01-29
申请人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
发明人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
IPC分类号： H01L39/14 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/225 , H01L39/146
摘要： A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.
摘要翻译：一种超导元件，至少包括由氧化物超导体材料构成的第一和第二超导电极以及由位于第一和第二超导电极之间并与第一和第二超导电极相邻设置的氧化物半导体材料构成的半导体膜，其中半导体膜由包含除Pr，Ba和Cu之外的稀土元素作为主要成分的氧化物或包含预定量的Pr以外的稀土元素的氧化物形成，预定量的Pr，Ba和Cu作为主要成分元件。非常精细的尺寸不再需要使用现有的精细制造技术进行制造。

3. 发明授权

US06486756B2 Superconductor signal amplifier 失效
标题翻译：超导体信号放大器
公开(公告)号：US06486756B2
公开(公告)日：2002-11-26
申请号：US09816240
申请日：2001-03-26
申请人： Yoshinobu Tarutani , Kazuo Saitoh , Kazumasa Takagi , Yoshihisa Soutome , Tokuumi Fukazawa , Akira Tsukamoto
发明人： Yoshinobu Tarutani , Kazuo Saitoh , Kazumasa Takagi , Yoshihisa Soutome , Tokuumi Fukazawa , Akira Tsukamoto
IPC分类号： H03F1700
CPC分类号： H03K19/1952 , H01L27/18 , H03F19/00
摘要： A superconductor signal amplifier which receives an extremely small high-frequency signal having a frequency of tens of GHz generated in a superconductive circuit, amplifies the voltage of the high-frequency signal without a decrease in frequency, and outputs the thus amplified high-frequency signal from the superconductive circuit. At an output part of a single flux quantum circuit using a flux quantum as a binary information carrier, there are provided a superconductive junction line for flux quantum transmission and a splitter for simultaneously producing two flux quanta from a flux quantum. According to the number of plural series-connected SQUIDs, a plurality of flux quantum signals are generated and input to the plural series-connected SQUIDs so that the SQUIDs are simultaneously switched to a voltage state. In each SQUID pair comprising two SQUIDs, a part of an inductor is shared by the two SQUIDs for reduction in inductance, thereby increasing an output voltage of the series-connected SQUIDs. Furthermore, a magnetic shielding film formed under each SQUID is electrically isolated from ground to prevent a signal delay due to a parasitic capacitance.
摘要翻译：接收在超导电路中产生的具有数十GHz频率的极小的高频信号的超导体信号放大器放大高频信号的电压而不降低频率，并输出这样放大的高频信号从超导电路。在使用磁通量子作为二进制信息载体的单个量子电路的输出部分，提供了用于磁通量子传输的超导结线和用于从磁通量子同时产生两个通量量子的分离器。根据多个串联SQUID的数量，产生多个通量量子信号并将其输入到多个串联连接的SQUID，使得SQUID同时切换到电压状态。在包含两个SQUID的每个SQUID对中，电感器的一部分由两个SQUID共享以减小电感，从而增加串联连接的SQUID的输出电压。此外，形成在每个SQUID下方的磁屏蔽膜与地电隔离以防止由寄生电容引起的信号延迟。

4. 发明授权

US5729046A Superconducting device having pinning regions 失效
标题翻译：具有钉扎区域的超导装置
公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L39/00
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

5. 发明授权

US5326745A Superconducting device with C-axis orientation perpendicular to current flow 失效
标题翻译：具有C轴取向垂直于电流的超导装置
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L23/48
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

6. 发明授权

US06069369A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US06069369A
公开(公告)日：2000-05-30
申请号：US957732
申请日：1997-10-24
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

7. 发明授权

US5126315A High Tc superconducting device with weak link between two superconducting electrodes 失效
标题翻译：具有两个超级电极之间的弱连接的高TC超导体器件
公开(公告)号：US5126315A
公开(公告)日：1992-06-30
申请号：US155806
申请日：1988-02-16
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

8. 发明授权

US5552375A Method for forming high T.sub.c superconducting devices 失效
标题翻译：形成高Tc超导器件的方法
公开(公告)号：US5552375A
公开(公告)日：1996-09-03
申请号：US192573
申请日：1994-02-07
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：公开了形成超导体的方法，包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流经该超导体的电流的方向。

9. 发明授权

US4921834A Flux method of growing oxide superconductors 失效
标题翻译：生长氧化物超导体的助焊剂方法
公开(公告)号：US4921834A
公开(公告)日：1990-05-01
申请号：US149557
申请日：1988-01-28
申请人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
发明人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
IPC分类号： C04B35/45 , H01L39/12 , H01L39/24
CPC分类号： H01L39/2419 , C04B35/4504 , H01L39/126 , Y10S505/729
摘要： An oxide-superconductor improved so as to have a high critical temperature (T.sub.c) comprises an oxide having a K.sub.2 NiF.sub.4 crystalline structure similar to a perovskite crystalline structure and represented by the following formula:(Ba.sub.x Sr.sub.z La.sub.1-x-z).sub.2 Cu.sub.1-w Ag.sub.w O.sub.4(1-y)wherein 0.1

10. 发明授权

US06310488B1 Superconductive single flux quantum logic circuit 失效
标题翻译：超导单通量子量子逻辑电路
公开(公告)号：US06310488B1
公开(公告)日：2001-10-30
申请号：US09451910
申请日：1999-12-01
申请人： Haruhiro Hasegawa , Yoshinobu Tarutani , Tokuumi Fukazawa , Kazumasa Takagi
发明人： Haruhiro Hasegawa , Yoshinobu Tarutani , Tokuumi Fukazawa , Kazumasa Takagi
IPC分类号： H03K19195
CPC分类号： H03K19/1952
摘要： In a superconductive single flux quantum logic circuit having two superconductive closed loops each comprising a Josephson junction and one or more inductors, a load inductance part is comprised of an inductor and a Josephson junction and two or more means for supplying a signal current are included. The load inductance part is made by one or more inductors and means for applying flux via the inductors is included.
摘要翻译：在具有两个包含约瑟夫逊结和一个或多个电感器的两个超导闭环的超导单通量量子逻辑电路中，负载电感部分包括电感器和约瑟夫逊结，并且包括用于提供信号电流的两个或更多个装置。负载电感部分由一个或多个电感器制成，并且包括用于通过电感器施加磁通的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式