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1. 发明授权

US5442195A Superconducting device including plural superconducting electrodes formed on a normal conductor 失效
标题翻译：超导装置包括形成在正常导体上的多个超导电极
公开(公告)号：US5442195A
公开(公告)日：1995-08-15
申请号：US136984
申请日：1993-10-18
申请人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
发明人： Kazuo Saitoh , Toshikazu Nishino , Mutsuko Hatano
IPC分类号： H01L39/22 , H01L27/18 , H01L39/24 , B05D5/12 , G11C11/44 , H01B12/00
CPC分类号： H01L27/18 , Y10S505/832
摘要： A superconducting device may include a superconducting weak link equipped with plural superconducting devices that are used as input-output terminals formed on the same plane and at least one current source for applying current to at least one of these superconducting electrodes. A superconducting device suitable for high integration can be realized as it enables structuring of a superconducting weak link 1 equipped with plural superconducting electrodes 101, 102, 103 and 104 that can be used as input-output terminals and changing symmetry of superconducting electrode arrangement through the form of a normal conductor 201 which is forming a superconducting weak link. In addition, when this superconducting device is used as a quasi-particle injection type device, a superconducting device with plural superconducting electrodes that can be used for a gate electrode, drain electrode or control electrode can be realized. Further, a superconducting device equipped with new functions (e.g. motion as a neuron device) which are capable of high integration can be realized by utilizing these characteristics. Furthermore, being a proximity effect type, superconducting weak link has an advantage of realizing an ultra highspeed, low electricity consuming switching device.
摘要翻译：超导装置可以包括配备有多个超导装置的超导弱连接器，所述多个超导装置用作形成在同一平面上的输入 - 输出端子和用于向这些超导电极中的至少一个施加电流的至少一个电流源。可以实现适用于高集成度的超导装置，因为它能够构成配备有可用作输入 - 输出端子的多个超导电极101,102,103和104的超导弱连接件1，并且通过所述超导电极装置改变超导电极装置的对称性形成超导弱连接的正常导体201的形式。此外，当该超导装置用作准粒子注入型装置时，可以实现具有可用于栅电极，漏电极或控制电极的多个超导电极的超导装置。此外，可以通过利用这些特性来实现配备有能够高集成度的新功能（例如作为神经元装置的运动）的超导装置。此外，作为接近效应型，超导弱连接具有实现超高速，低耗电开关器件的优点。

2. 发明授权

US5550389A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5550389A
公开(公告)日：1996-08-27
申请号：US171869
申请日：1993-12-22
申请人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
发明人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/145
摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
摘要翻译：通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。

3. 发明授权

US5326745A Superconducting device with C-axis orientation perpendicular to current flow 失效
标题翻译：具有C轴取向垂直于电流的超导装置
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L23/48
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

4. 发明授权

US5729046A Superconducting device having pinning regions 失效
标题翻译：具有钉扎区域的超导装置
公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L39/00
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

5. 发明授权

US5272358A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5272358A
公开(公告)日：1993-12-21
申请号：US796885
申请日：1991-11-25
申请人： Toshikazu Nishino , Ushio Kawabe , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Mutsuko Hatano
IPC分类号： H01L39/22
CPC分类号： H01L39/228
摘要： In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.
摘要翻译：在超导装置中，通过设置在超导电极之间的控制电极来控制与半导体接触的两个超导电极之间流过的超导电流的值，在半导体内形成高的杂质浓度区域以便接触与超导电极并延伸到控制电极的下端。

6. 发明授权

US5552375A Method for forming high T.sub.c superconducting devices 失效
标题翻译：形成高Tc超导器件的方法
公开(公告)号：US5552375A
公开(公告)日：1996-09-03
申请号：US192573
申请日：1994-02-07
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：公开了形成超导体的方法，包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流经该超导体的电流的方向。

7. 发明授权

US5317168A Superconducting field effect transistor 失效
标题翻译：超导场效应晶体管
公开(公告)号：US5317168A
公开(公告)日：1994-05-31
申请号：US978454
申请日：1992-11-19
申请人： Toshikazu Nishino , Ushio Kawabe , Fumio Murai , Tokuo Kure , Mutsuko Hatano , Haruhiro Hasegawa
发明人： Toshikazu Nishino , Ushio Kawabe , Fumio Murai , Tokuo Kure , Mutsuko Hatano , Haruhiro Hasegawa
IPC分类号： H01L29/43 , H01L39/22
CPC分类号： H01L29/437
摘要： A superconducting field effect transistor which is very small in size and high in dimensional accuracy, has a first layer of material forming a control electrode and a second layer of another material is disposed on said first layer. A width of said first layer in a direction toward a superconducting source electrode and a superconducting drain electrode is narrower than a width of the second layer in the same direction. Polycrystalline silicon may be used as the control electrode while the second layer can be made of silicon nitride. Furthermore, a side surface of the control electrode may be coated with an insulator film. Accordingly, the above transistor has a fine structure gate electrode part that can be fabricated easily and accurately.
摘要翻译：尺寸非常小，尺寸精度高的超导场效应晶体管具有形成控制电极的第一层材料，另一材料的第二层设置在所述第一层上。所述第一层在朝向超导源电极和超导漏电极的方向上的宽度比相同方向上的第二层的宽度窄。多晶硅可以用作控制电极，而第二层可以由氮化硅制成。此外，控制电极的侧表面可以涂覆有绝缘膜。因此，上述晶体管具有可以容易且精确地制造的精细结构的栅电极部。

8. 发明授权

US5256897A Oxide superconducting device 失效
标题翻译：氧化物超导器件
公开(公告)号：US5256897A
公开(公告)日：1993-10-26
申请号：US729867
申请日：1991-07-10
申请人： Haruhiro Hasegawa , Toshiyuki Aida , Toshikazu Nishino , Mutsuko Hatano , Hideaki Nakane , Tokuumi Fukazawa
发明人： Haruhiro Hasegawa , Toshiyuki Aida , Toshikazu Nishino , Mutsuko Hatano , Hideaki Nakane , Tokuumi Fukazawa
IPC分类号： H01L39/22 , H01L29/161 , H01L29/48 , H01L29/56
CPC分类号： H01L39/22 , H01L39/228
摘要： An oxide superconducting device has a junction structure composed of at least one oxide superconductor and at least one insulator in which carriers have been generated. As the insulator in which carriers have been generated, there can be used, for example, SrTiO.sub.3 doped with Nb. With such a device, rectifying characteristics can be attained in the junction.
摘要翻译：氧化物超导装置具有由至少一个氧化物超导体和至少一个其中已经产生载流子的绝缘体组成的结结构。作为已经生成载流子的绝缘体，可以使用例如掺杂有Nb的SrTiO 3。利用这种装置，可以在接合处获得整流特性。

9. 发明授权

US06069369A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US06069369A
公开(公告)日：2000-05-30
申请号：US957732
申请日：1997-10-24
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

10. 发明授权

US5126315A High Tc superconducting device with weak link between two superconducting electrodes 失效
标题翻译：具有两个超级电极之间的弱连接的高TC超导体器件
公开(公告)号：US5126315A
公开(公告)日：1992-06-30
申请号：US155806
申请日：1988-02-16
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

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