会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • External combustion engine
    • 外燃机
    • US07493751B2
    • 2009-02-24
    • US11717794
    • 2007-03-13
    • Shuzo OdaShinichi YatsuzukaKatsuya KomakiShunji OkemotoToshiyuki Morishita
    • Shuzo OdaShinichi YatsuzukaKatsuya KomakiShunji OkemotoToshiyuki Morishita
    • F02C5/00
    • F01K11/00
    • An external combustion engine is disclosed, comprising a container (11) for sealing a working liquid (12) in a way adapted to allow the liquid to flow therein, a heater (13) for heating and vaporizing the working liquid (12) in the container (11), and a cooler (14) for cooling and liquefying the vapor of the working liquid (12) heated and vaporized by the heater (13). The displacement of the working liquid (12) caused by the volume change of the vapor of the working liquid (12) is output by being converted into mechanical energy. In the heated portion (11d) of the container (11) for vaporizing the working liquid (12), the direction of displacement of the working liquid (12) at the parts (17, 19) far from the cooler (14) is changed with respect to the direction of displacement at the part (16) near to the cooler (14).
    • 公开了一种外燃机,包括用于以适于允许液体在其中流动的方式密封工作液体(12)的容器(11),用于加热和蒸发工作液体(12)的加热器(13) 容器(11)和用于冷却和液化由加热器(13)加热和蒸发的工作液体(12)的蒸气的冷却器(14)。 由工作液体(12)的蒸汽的体积变化引起的工作液体(12)的位移通过转换为机械能而被输出。 在用于蒸发工作液体(12)的容器(11)的加热部分(11d)中,改变远离冷却器(14)的部分(17,19)处的工作液体(12)的位移方向被改变 相对于靠近冷却器(14)的部分(16)处的位移方向。
    • 10. 发明申请
    • Silicon carbide semiconductor device
    • 碳化硅半导体器件
    • US20080224150A1
    • 2008-09-18
    • US12073837
    • 2008-03-11
    • Naohiro SuzukiTsuyoshi YamamotoToshiyuki Morishita
    • Naohiro SuzukiTsuyoshi YamamotoToshiyuki Morishita
    • H01L29/24
    • H01L29/66068H01L21/0465H01L29/0615H01L29/063H01L29/0638H01L29/1608H01L29/45H01L29/7828
    • The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.
    • SiC半导体器件包括由碳化硅制成的第一导电类型的衬底,由碳化硅制成的第一导电类型的漂移层,漂移层比衬底掺杂少,由衬底的一部分构成的单元部分 以及漂移层的一部分,由基板的另一部分和漂移层的另一部分构成的圆周部分,周向部分形成为围绕电池部分,以及形成在第二导电类型的RESURF层 漂移层的表面部分,以便位于圆周部分中。 RESURF层由具有不同杂质浓度的第一和第二RESURF层构成,第二RESURF层与第一RESURF层的外周接触并延伸到电池单元的周围。