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1. 发明授权

US06452213B1 SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：具有第一，第二和第三非晶体薄膜的半导体器件在具有不低于第一薄膜且不高于第三薄膜的热导率的第二薄膜的绝缘基底上形成，及其制造方法
公开(公告)号：US06452213B1
公开(公告)日：2002-09-17
申请号：US09696002
申请日：2000-10-26
申请人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L29786
CPC分类号： H01L29/66757 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/78603 , H01L29/78621 , H01L29/78633 , H01L29/78675
摘要： A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.
摘要翻译：第一薄膜形成在绝缘基底的一个表面上，并且在第一薄膜上形成具有高于第一薄膜的导热率的第二薄膜。至少在第二薄膜上形成具有比第二薄膜更高的热导率的非晶半导体薄膜。通过激光退火将非晶半导体薄膜变为多晶半导体薄膜。提供第二薄膜导致多晶半导体薄膜中更大且均匀的晶粒直径和较少的保护性。

2. 发明授权

US07491972B1 Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device 有权
标题翻译：多晶硅半导体薄膜基板，其制造方法，半导体器件和电子器件
公开(公告)号：US07491972B1
公开(公告)日：2009-02-17
申请号：US10019407
申请日：2000-06-23
申请人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/66757
摘要： A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconductor thin film. A transistor is then formed in the polycrystalline semiconductor thin film. More specifically, a UV-ray is irradiated to the rear face of the insulative substrate or the amorphous semiconductor film to heat the amorphous semiconductor film to a melting temperature or lower. Then a laser beam at a suitable shape selection laser energy density Ec forms the crystal grains with the number of closest crystal grains of 6 most predominantly being irradiated to convert the amorphous semiconductor film into a polycrystalline semiconductor thin film. The thin film transistor formed in this structure has a high yield and is capable of high-speed operation.
摘要翻译：一种半导体器件及其制造方法，其通过在绝缘性基板的表面上形成非晶半导体膜，并用激光束照射所述非晶半导体膜，使其结晶而形成多晶半导体薄膜。然后在多晶半导体薄膜中形成晶体管。更具体地，将紫外线照射到绝缘基板或非晶半导体膜的背面，以将非晶半导体膜加热至熔融温度以下。然后以合适的形状选择激光能量密度Ec的激光束形成最主要被照射的最接近晶粒数6的晶粒，以将非晶半导体膜转换为多晶半导体薄膜。在该结构中形成的薄膜晶体管具有高产率并且能够高速操作。

3. 发明授权

US09191030B2 Memory controller, data storage device, and memory controlling method 有权
标题翻译：内存控制器，数据存储设备和内存控制方式
公开(公告)号：US09191030B2
公开(公告)日：2015-11-17
申请号：US13693360
申请日：2012-12-04
申请人： Akihiro Sakata , Yoshinobu Kimura
发明人： Akihiro Sakata , Yoshinobu Kimura
IPC分类号： H03M13/29 , G06F11/10
CPC分类号： H03M13/29 , G06F11/1004 , H03M13/2906
摘要： A memory controller includes a first error detection code generator for generating a first error detection code for data received from a host, a controller to write the data and the first error detection code to nonvolatile memory and to read the data and the first error detection code from the nonvolatile memory, an error detector to perform an error detection based on the data and the first error detection code that are read from the nonvolatile memory, a second error detection code generator to generate a second detection error code based on the data read from the nonvolatile memory, and a mismatch code generator to generate a mismatch code signaling the presence of an error in the data, wherein either the second error detection code or the mismatch code is selected based on the error detection and sent to the host.
摘要翻译：存储器控制器包括：第一错误检测码发生器，用于产生用于从主机接收的数据的第一错误检测码，控制器将数据和第一错误检测码写入非易失性存储器，并读取数据和第一错误检测码来自所述非易失性存储器的误差检测器，基于从所述非易失性存储器读取的所述数据和所述第一检错码执行错误检测;第二检错码发生器，用于基于从所述非易失性存储器读取的数据产生第二检测错误代码; 所述非易失性存储器和不匹配码发生器产生用于发信号通知所述数据中存在错误的不匹配码，其中所述第二错误检测码或所述不匹配码是基于所述错误检测被选择的并被发送给所述主机。

4. 发明申请

US20090181483A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 审中-公开
公开(公告)号：US20090181483A1
公开(公告)日：2009-07-16
申请号：US12403776
申请日：2009-03-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： H01L21/336 , H01L21/26 , H01L21/78
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

5. 发明授权

US07518252B2 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device 失效
标题翻译：薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
公开(公告)号：US07518252B2
公开(公告)日：2009-04-14
申请号：US11509605
申请日：2006-08-25
申请人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L23/28 , H01L29/04
CPC分类号： H01L21/0268 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.
摘要翻译：薄膜半导体衬底包括绝缘衬底，形成在绝缘衬底上的非晶半导体薄膜和位于半导体薄膜上并指示用于结晶的参考位置的多个对准标记。

6. 发明授权

US07413604B2 Process for producing polysilicon film 有权
标题翻译：多晶硅薄膜生产工艺
公开(公告)号：US07413604B2
公开(公告)日：2008-08-19
申请号：US10942911
申请日：2004-09-17
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： C30B1/02
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

7. 发明申请

US20060073664A1 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060073664A1
公开(公告)日：2006-04-06
申请号：US11242961
申请日：2005-10-05
申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L21/336
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.
摘要翻译：提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

8. 发明申请

US20060040436A1 Method and apparatus forming crystallized semiconductor layer, and method for manufacturing semiconductor apparatus 审中-公开
标题翻译：形成结晶半导体层的方法和装置以及半导体装置的制造方法
公开(公告)号：US20060040436A1
公开(公告)日：2006-02-23
申请号：US11203962
申请日：2005-08-16
申请人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
发明人： Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshinobu Kimura
IPC分类号： H01L21/84
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66772
摘要： A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.
摘要翻译：一种形成结晶化半导体层的方法包括制备其中形成至少一个晶种的非单晶半导体层，并且用能量线照射其中形成晶种的非单晶半导体层以允许在非单晶半导体层中从晶种横向生长的晶体，通过将至少一部分晶种定位到晶种的至少一部分，进行能量射线的最小强度值的区域的照射，能量射线确认具有能量射线的最大强度值的区域连续地减少到照射表面中具有最小强度值的区域。

9. 发明申请

US20050272274A1 Apparatus for forming a semiconductor thin film 有权
标题翻译：用于形成半导体薄膜的装置
公开(公告)号：US20050272274A1
公开(公告)日：2005-12-08
申请号：US11198656
申请日：2005-08-05
申请人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
发明人： Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Masayuki Jyumonji , Yukio Taniguchi , Masato Hiramatsu , Fumiki Nakano
IPC分类号： B23K26/06 , C30B1/00 , C30B13/00 , C30B13/24 , H01L21/20 , H01L21/268 , H01L21/26
CPC分类号： H01L21/02678 , B23K26/06 , B23K26/066 , B23K2101/40 , C30B1/00 , C30B13/24 , C30B29/06 , H01L21/02691 , H01L21/2026 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.
摘要翻译：公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

10. 发明授权

US06903371B2 Thin film transistor and display using the same 有权
标题翻译：薄膜晶体管和显示器使用相同
公开(公告)号：US06903371B2
公开(公告)日：2005-06-07
申请号：US10773950
申请日：2004-02-06
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

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