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1. 发明授权

US06452213B1 SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：具有第一，第二和第三非晶体薄膜的半导体器件在具有不低于第一薄膜且不高于第三薄膜的热导率的第二薄膜的绝缘基底上形成，及其制造方法
公开(公告)号：US06452213B1
公开(公告)日：2002-09-17
申请号：US09696002
申请日：2000-10-26
申请人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L29786
CPC分类号： H01L29/66757 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/78603 , H01L29/78621 , H01L29/78633 , H01L29/78675
摘要： A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.
摘要翻译：第一薄膜形成在绝缘基底的一个表面上，并且在第一薄膜上形成具有高于第一薄膜的导热率的第二薄膜。至少在第二薄膜上形成具有比第二薄膜更高的热导率的非晶半导体薄膜。通过激光退火将非晶半导体薄膜变为多晶半导体薄膜。提供第二薄膜导致多晶半导体薄膜中更大且均匀的晶粒直径和较少的保护性。

2. 发明授权

US07491972B1 Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device 有权
标题翻译：多晶硅半导体薄膜基板，其制造方法，半导体器件和电子器件
公开(公告)号：US07491972B1
公开(公告)日：2009-02-17
申请号：US10019407
申请日：2000-06-23
申请人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
发明人： Yoshinobu Kimura , Takahiro Kamo , Yoshiyuki Kaneko
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/66757
摘要： A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconductor thin film. A transistor is then formed in the polycrystalline semiconductor thin film. More specifically, a UV-ray is irradiated to the rear face of the insulative substrate or the amorphous semiconductor film to heat the amorphous semiconductor film to a melting temperature or lower. Then a laser beam at a suitable shape selection laser energy density Ec forms the crystal grains with the number of closest crystal grains of 6 most predominantly being irradiated to convert the amorphous semiconductor film into a polycrystalline semiconductor thin film. The thin film transistor formed in this structure has a high yield and is capable of high-speed operation.
摘要翻译：一种半导体器件及其制造方法，其通过在绝缘性基板的表面上形成非晶半导体膜，并用激光束照射所述非晶半导体膜，使其结晶而形成多晶半导体薄膜。然后在多晶半导体薄膜中形成晶体管。更具体地，将紫外线照射到绝缘基板或非晶半导体膜的背面，以将非晶半导体膜加热至熔融温度以下。然后以合适的形状选择激光能量密度Ec的激光束形成最主要被照射的最接近晶粒数6的晶粒，以将非晶半导体膜转换为多晶半导体薄膜。在该结构中形成的薄膜晶体管具有高产率并且能够高速操作。

3. 发明授权

US08222645B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08222645B2
公开(公告)日：2012-07-17
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译：提供了具有优异的光电转换效率的光传感器的显示装置。在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

4. 发明申请

US20090061575A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090061575A1
公开(公告)日：2009-03-05
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

5. 发明申请

US20080173871A1 Display Device and Manufacturing Method of Display Device 审中-公开
标题翻译：显示设备的显示设备和制造方法
公开(公告)号：US20080173871A1
公开(公告)日：2008-07-24
申请号：US11939073
申请日：2007-11-13
申请人： Takeshi Noda , Takahiro Kamo , Hideaki Shimmoto
发明人： Takeshi Noda , Takahiro Kamo , Hideaki Shimmoto
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1259 , H01L27/1214 , H01L29/04 , H01L29/42384 , H01L29/4908
摘要： In a display device which includes MIS transistors having semiconductor layers thereof formed of an amorphous semiconductor and MIS transistors having semiconductor layers thereof including a polycrystalline semiconductor, the present invention can enhance crystallinity of the semiconductor layers formed of the polycrystalline semiconductor when the respective MIS transistors adopt the bottom gate structure. In the display device, first MIS transistors formed in a first region of a substrate and second MIS transistors formed in a second region different from the first region respectively have a gate electrode thereof between the substrate and the semiconductor layer, the first MIS transistor has the semiconductor layer thereof formed of only the amorphous semiconductor, the second MIS transistor has the semiconductor layer thereof including the polycrystalline semiconductor, and a gate electrode of the second MIS transistor has a thickness smaller than a thickness of a gate electrode of the first MIS transistor.
摘要翻译：在包括由非晶半导体形成的半导体层的MIS晶体管的显示装置和具有包含多晶半导体的半导体层的MIS晶体管的本发明中，当各个MIS晶体管采用时，本发明可提高由多晶半导体形成的半导体层的结晶度底栅结构。在显示装置中，形成在基板的第一区域的第一MIS晶体管和形成在与第一区域不同的第二区域的第二MIS晶体管分别在基板和半导体层之间具有栅电极，第一MIS晶体管具有半导体层仅由非晶半导体形成，第二MIS晶体管的半导体层包括多晶半导体，第二MIS晶体管的栅电极的厚度小于第一MIS晶体管的栅电极的厚度。

6. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

7. 发明授权

US07727784B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07727784B2
公开(公告)日：2010-06-01
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/00
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

8. 发明授权

US07723135B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07723135B2
公开(公告)日：2010-05-25
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线形激光束的横截面的所有位置中确定E /√{平方根超过（）}（W）。由于适合于硅膜的横向晶体生长的激光功率与E /√{平方根超过（）}（W）具有密切相关性，所以将该值用作本发明上述的评估结果。

9. 发明授权

US07456433B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07456433B2
公开(公告)日：2008-11-25
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜并且将植入物施加到前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

10. 发明申请

US20080188012A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080188012A1
公开(公告)日：2008-08-07
申请号：US12022201
申请日：2008-01-30
申请人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
发明人： Akio Yazaki , Mikio Hongo , Takeshi Sato , Takahiro Kamo
IPC分类号： H01L21/66
CPC分类号： H01L21/02691 , B23K26/032 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L27/1214 , H01L27/1285
摘要： In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced. In the present invention, (1) the energy distribution of the linear-shaped laser beam is measured by a detector type CCD camera moved stepwise in the directions that its long axis and short axis extend, respectively, (2) a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signals in a direction parallel to the short axis by the square root of the width W of the short axis of the linear-shaped laser beam in each position in the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam. Since a laser power which is suitable for lateral crystal growth of the silicon film has a close correlation with E/√{square root over ( )}(W), this value is used as an evaluation result mentioned above in the present invention.
摘要翻译：在用具有不均匀宽度的光束的线形激光束退火的硅膜的结晶中，评估激光束的轮廓（强度分布），并将结果反馈到振荡条件的激光束或将其投影到硅膜上的光学条件，由此产生包括高质量结晶硅膜的显示装置。在本发明中，（1）线状激光的能量分布通过分别沿其长轴和短轴延伸的方向逐步移动的检测器型CCD照相机来测量，（2）通过分割获得的值通过在长轴方向的各位置上将线性激光束的短轴的宽度W的平方根累积到与短轴平行的方向上的检测信号而获得的长轴方向上的累积强度E：在线性激光束的横截面的所有位置中确定E /√{（W））的平方根，由于适合于硅膜的横向晶体生长的激光功率与 E（√）（（W））的平方根，将该值用作本发明上述的评价结果。

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