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    • 1. 发明授权
    • Method to stabilize a carbon alignment layer for liquid crystal displays
    • 稳定液晶显示器的碳取向层的方法
    • US06485614B2
    • 2002-11-26
    • US09727572
    • 2000-11-30
    • Yoshimine KatohYoshiki NakagawaShuhichi OdaharaMahesh Govind Samant
    • Yoshimine KatohYoshiki NakagawaShuhichi OdaharaMahesh Govind Samant
    • C07C100
    • C23C14/5833C23C14/0605C23C14/584G02F1/13378
    • A method for improving the anchoring of liquid crystals on carbon alignment layers used in liquid crystal displays involves exposing the alignment layer to hydrogen atoms. The atomic hydrogen exposure passivates the surface of the carbon layer to stabilize the anchoring of the subsequently deposited liquid crystals. The substrate on which the carbon layer is supported is located beneath a stretched tungsten filament, and the substrate and filament are located in a vacuum chamber containing hydrogen gas. The heating of the tungsten filament by an appropriate power source dissociates the hydrogen gas into hydrogen atoms and the hydrogen atoms contact the surface of the carbon layer. The process is applicable to stabilize carbon alignment layers that have been formed by directional deposition of carbon, as well as carbon alignment layers where the alignment is caused by a separate ion irradiation step after the carbon layer is formed.
    • 用于改善在液晶显示器中使用的碳取向层上的液晶的锚定的方法包括将取向层暴露于氢原子。 原子氢暴露钝化碳层的表面以稳定随后沉积的液晶的锚定。 其上支撑有碳层的基板位于拉伸的钨丝之下,并且基材和长丝位于含有氢气的真空室中。 通过适当的电源对钨丝进行加热将氢气解离成氢原子,氢原子与碳层的表面接触。 该方法适用于稳定通过碳的定向沉积形成的碳取向层,以及在形成碳层之后通过单独的离子照射步骤引起排列的碳取向层。
    • 2. 发明授权
    • Method for forming a multi-domain alignment layer for a liquid crystal display device
    • 用于形成液晶显示装置的多畴取向层的方法
    • US06313896B1
    • 2001-11-06
    • US09387215
    • 1999-08-31
    • Mahesh Govind SamantJoachim Stöhr
    • Mahesh Govind SamantJoachim Stöhr
    • G02F11337
    • G02F1/133753G02F1/13378
    • A method for producing a multi-domain alignment layer, as well as multi-domain alignment layers produced thereby and liquid crystal displays comprising the same, are provided. In the subject method, an alignment layer is produced on an alignment surface by directing an ion beam or ion beams at the surface at an angle not equal to 90°, so that the ions contact the surface at non-normal incidence. The substrate may be rotated or the ion beam(s) re-directed or the ion beam source moved so that the surface may be bombarded from different directions in different regions resulting in multiple alignment layer domains with differing alignment. In an alternative embodiment, two ion beams with different angles of incidence may be directed at the surface simultaneously or sequentially, thereby creating multiple alignment layer domains without need for rotation of the substrate. The resultant multi-domain alignment layers find use in liquid crystal display devices.
    • 提供了多畴取向层的制造方法,以及由此制造的多畴取向膜和包括其的液晶显示器。 在本发明方法中,通过以不等于90°的角度引导离子束或离子束在表面处,在对准表面上产生取向层,使得离子以非正常入射接触表面。 衬底可以旋转或者离子束被重新定向或离子束源移动,使得可以在不同区域中从不同方向轰击表面,导致具有不同对准的多个取向层畴。 在替代实施例中,具有不同入射角的两个离子束可以同时或顺序地指向表面,由此产生多个取向层畴,而不需要旋转衬底。 所得的多畴取向层可用于液晶显示装置。
    • 3. 发明授权
    • Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device
    • 用于磁性隧道结装置的反铁磁交换耦合结构
    • US06326637B1
    • 2001-12-04
    • US09420213
    • 1999-10-18
    • Stuart Stephen Papworth ParkinMahesh Govind Samant
    • Stuart Stephen Papworth ParkinMahesh Govind Samant
    • H01L2906
    • H01F10/3268B82Y10/00B82Y25/00G11B5/3903G11B5/3909G11B2005/3996H01L43/08H01L43/10
    • An antiferromagnetically exchange-coupled structure for use in various types of magnetic devices, such as magnetic tunnel junctions and spin-valve giant magnetoresistance recording heads, includes an antiferromagnetic layer formed of an alloy of osmium and manganese, wherein the osmium is present in the range of approximately 10 to 30 atomic %. The antiferromagnetic layer is deposited on a non-reactive underlayer, preferably one formed of a noble metal, such as platinum, palladium or alloys thereof. The antiferromagnetic material provides a strong exchange biasing for the ferromagnetic layer that is deposited on the antiferromagnetic layer. Iridium may be added to the osmium-manganese alloy, wherein the total of osmium and iridium is in the range of the approximately 10 to 30 atomic %, to increase the blocking temperature of the antiferromagnetic material. A template layer of permalloy (nickel-iron alloy) may be formed between the underlayer and the antiferromagnetic layer to improve the growth of the osmium-manganese alloy. The resulting antiferromagnetically exchange-coupled structure exhibits very high thermal stability, i.e., the magnetoresistance of magnetic tunnel junction devices is retained even during relatively high annealing process temperatures. This allows magnetic tunnel junction devices using the structure to be used as memory cells in magnetic random access memory arrays that are formed on substrates with electronic circuitry formed by conventional high-temperature CMOS processes and which require high temperature anneals of the completed memory chips.
    • 用于各种磁性装置(例如磁性隧道结和自旋阀巨磁电阻记录头)的反铁磁交换耦合结构包括由锇和锰合金形成的反铁磁层,其中锇存在于该范围内 约10至30原子%。 反铁磁层沉积在非反应性底层上,优选由贵金属形成的铂,钯或其合金形成。 反铁磁材料为沉积在反铁磁层上的铁磁层提供强的交换偏置。 铱可以添加到锇锰合金中,其中锇和铱的总和在大约10至30原子%的范围内,以增加反铁磁性材料的封闭温度。 可以在底层和反铁磁层之间形成坡莫合金(镍 - 铁合金)的模板层,以改善锇锰合金的生长。 所得到的反铁磁交换耦合结构表现出非常高的热稳定性,即即使在相对高的退火工艺温度下,磁性隧道结装置的磁阻仍然保持。 这允许使用该结构的磁隧道结器件用作磁性随机存取存储器阵列中的存储器单元,其形成在具有由常规高温CMOS工艺形成的电子电路的衬底上,并且需要完成的存储器芯片的高温退火。
    • 8. 发明授权
    • Method of producing a multi-domain alignment layer by bombarding ions of
normal incidence
    • 通过轰击正常入射的离子制备多畴取向层的方法
    • US6061115A
    • 2000-05-09
    • US185234
    • 1998-11-03
    • Mahesh Govind SamantJoachim Stohr
    • Mahesh Govind SamantJoachim Stohr
    • G02F1/1337C07C1/00
    • G02F1/133753G02F1/13378
    • Methods for producing a multi-domain alignment layer, as well as the multi-domain alignment layers produced thereby and liquid crystal displays comprising the same, are provided. In the subject methods, a surface of an alignment film, usually present on a substrate such a planar component of a polarized material, is bombarded with ions initially at normal incidence in the presence of an electric field in a manner sufficient such that the ions contact the surface of the alignment film at non-normal incidence. In a preferred embodiment, the electric field is produced by an array of conducting means associated with the surface of the alignment film, at least two of which means are differentially biased, e.g. alternately biased. The resultant alignment layers find use in liquid crystal display devices.
    • 提供了多畴取向层的制造方法,以及由此制造的多畴取向膜和包括其的液晶显示器。 在本方法中,通常存在于基板上的取向膜的表面,如极化材料的平面部件,在电场存在下以最初以正常入射的离子以足够的方式被轰击,使得离子接触 取向膜的表面非正常入射。 在优选实施例中,电场通过与取向膜的表面相关联的导电装置的阵列产生,其中至少两个装置被差分偏置,例如, 交替偏见。 所得到的取向层用于液晶显示装置。