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1. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

2. 发明授权

US09018954B2 Sample holder for electricity-detection electron spin resonance device 有权
标题翻译：电子检测电子自旋共振装置的样品架
公开(公告)号：US09018954B2
公开(公告)日：2015-04-28
申请号：US13499915
申请日：2010-10-01
申请人： Yoshiki Yonamoto , Naotoshi Akamatsu
发明人： Yoshiki Yonamoto , Naotoshi Akamatsu
IPC分类号： G01V3/00 , G01R33/30 , G01N24/10 , G01R33/60
CPC分类号： G01R33/30 , G01N24/10 , G01R33/60
摘要： A sample holder structure is provided with which it is possible to reduce current noise derived from electromagnetic induction, etc. in electricity-detection electron spin resonance spectroscopy. Also provided is a process for producing the structure. The material of the sample holder, which is used in an electricity-detection electron spin resonance device, is an FR-4 resin, alumina, glass, or Teflon. The sample holder has four wiring leads formed on the surface thereof. The four wiring leads each has a three-layer structure composed of a nickel layer, a gold layer, and a resist layer which have been arranged in the order from the sample holder surface, and the sample holder has the shape of the letter T. The sample holder has, formed in the end thereof, a gold pad for affixing a sample, and the gold pad has a multilayer structure composed of a nickel layer and a gold layer arranged in this order from the sample holder surface. In the T-shaped head part of the sample holder, the four wiring leads are spaced wider from each other.
摘要翻译：提供了一种样品保持器结构，其可以在电检测电子自旋共振光谱法中减少由电磁感应等产生的电流噪声。还提供了用于生产该结构的方法。用于检测电子自旋共振装置的样品架的材料是FR-4树脂，氧化铝，玻璃或特氟隆。样品架具有形成在其表面上的四个布线引线。四个布线引线各自具有由从样品保持器表面按顺序排列的镍层，金层和抗蚀剂层构成的三层结构，并且样品架具有字母T的形状。样品保持器在其末端形成有用于固定样品的金垫，并且金垫具有由样品保持器表面依次排列的镍层和金层构成的多层结构。在样品架的T形头部分中，四个布线引线彼此间隔开。

3. 发明申请

US20120223716A1 SAMPLE HOLDER FOR ELECTRICITY-DETECTION ELECTRON SPIN RESONANCE DEVICE 有权
标题翻译：电子检测电子旋转谐振装置的样品座
公开(公告)号：US20120223716A1
公开(公告)日：2012-09-06
申请号：US13499915
申请日：2010-10-01
申请人： Yoshiki Yonamoto , Naotoshi Akamatsu
发明人： Yoshiki Yonamoto , Naotoshi Akamatsu
IPC分类号： G01R33/30
CPC分类号： G01R33/30 , G01N24/10 , G01R33/60
摘要： A sample holder structure is provided with which it is possible to reduce current noise derived from electromagnetic induction, etc. in electricity-detection electron spin resonance spectroscopy. Also provided is a process for producing the structure. The material of the sample holder, which is used in an electricity-detection electron spin resonance device, is an FR-4 resin, alumina, glass, or Teflon. The sample holder has four wiring leads formed on the surface thereof. The four wiring leads each has a three-layer structure composed of a nickel layer, a gold layer, and a resist layer which have been arranged in the order from the sample holder surface, and the sample holder has the shape of the letter T. The sample holder has, formed in the end thereof, a gold pad for affixing a sample, and the gold pad has a multilayer structure composed of a nickel layer and a gold layer arranged in this order from the sample holder surface. In the T-shaped head part of the sample holder, the four wiring leads are spaced wider from each other.
摘要翻译：提供了一种样品保持器结构，其可以在电检测电子自旋共振光谱法中减少由电磁感应等产生的电流噪声。还提供了用于生产该结构的方法。用于检测电子自旋共振装置的样品架的材料是FR-4树脂，氧化铝，玻璃或特氟隆。样品架具有形成在其表面上的四个布线引线。四个布线引线各自具有由从样品保持器表面按顺序排列的镍层，金层和抗蚀剂层构成的三层结构，并且样品架具有字母T的形状。样品保持器在其末端形成有用于固定样品的金垫，并且金垫具有由样品保持器表面依次排列的镍层和金层构成的多层结构。在样品架的T形头部分中，四个布线引线彼此间隔开。

4. 发明授权

US08053826B2 Non-volatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08053826B2
公开(公告)日：2011-11-08
申请号：US12602154
申请日：2007-09-10
申请人： Yoshiki Yonamoto
发明人： Yoshiki Yonamoto
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/115 , H01L29/4234 , H01L29/513 , H01L29/66833 , H01L29/792
摘要： The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).
摘要翻译：非易失性存储器，特别是MONOS型非易失性存储器的电荷保持特性得到改善。在包括隧道氧化硅膜（107），用作电荷存储膜的氮化硅膜（104），氧化硅膜（105）和栅电极（108）的非挥发性存储单元中，其顺序地形成在半导体衬底上，隧道氧化硅膜（107）具有氮氧化硅膜（102）和氧化硅膜（103）的叠层结构。这里，在氧氮化硅膜（102）的膜厚度方向上离开与半导体基板的界面的距离增加时，氮氧化合物膜（102）中所含的氮原子的密度降低。

5. 发明授权

US08084315B2 Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation 有权
标题翻译：通过等离子体成膜法和等离子体氮化法制造非易失性半导体存储器件的方法
公开(公告)号：US08084315B2
公开(公告)日：2011-12-27
申请号：US12622816
申请日：2009-11-20
申请人： Katsuhiko Yamamoto , Tadashi Terasaki , Yoshiki Yonamoto , Hirotaka Hamamura
发明人： Katsuhiko Yamamoto , Tadashi Terasaki , Yoshiki Yonamoto , Hirotaka Hamamura
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/792
CPC分类号： H01L21/28282 , H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/3115 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/7885
摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.
摘要翻译：提供了一种能够提高非易失性存储器的记忆保持特性的技术。特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性非易失性存储器的保留特性。在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

6. 发明申请

US20100176439A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20100176439A1
公开(公告)日：2010-07-15
申请号：US12602154
申请日：2007-09-10
申请人： Yoshiki Yonamoto
发明人： Yoshiki Yonamoto
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/28282 , H01L27/115 , H01L29/4234 , H01L29/513 , H01L29/66833 , H01L29/792
摘要： The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).
摘要翻译：非易失性存储器，特别是MONOS型非易失性存储器的电荷保持特性得到改善。在包括隧道氧化硅膜（107），用作电荷存储膜的氮化硅膜（104），氧化硅膜（105）和栅电极（108）的非挥发性存储单元中，其顺序地形成在半导体衬底上，隧道氧化硅膜（107）具有氮氧化硅膜（102）和氧化硅膜（103）的叠层结构。这里，在氧氮化硅膜（102）的膜厚度方向上离开与半导体基板的界面的距离增加时，氮氧化合物膜（102）中所含的氮原子的密度降低。

7. 发明申请

US20080316656A1 Magnetic head and method of manufacturing the magnetic head 审中-公开
标题翻译：磁头及制造磁头的方法
公开(公告)号：US20080316656A1
公开(公告)日：2008-12-25
申请号：US12214748
申请日：2008-06-20
申请人： Kazuhito Miyata , Kentarou Namiki , Nobuto Yasui , Hideaki Tanaka , ATsuko Okawa , Akihiro Namba , Yoshiki Yonamoto
发明人： Kazuhito Miyata , Kentarou Namiki , Nobuto Yasui , Hideaki Tanaka , ATsuko Okawa , Akihiro Namba , Yoshiki Yonamoto
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/41 , G11B2005/3996 , Y10T29/49048
摘要： Embodiments of the present invention provide a magnetic head suitable for high density recording at a high yield by reducing the thickness of an air-bearing surface protection layer of a magnetic head and suppressing reduction in the signal-to-noise (S/N) ratio of a read element. According to one embodiment, a read element of a magnetic head has a magnetoresistive effect film (TMR film) between a lower magnetic shield layer and an upper magnetic shield layer, and has a refill film and a magnetic domain control film in both sides of the TMR film. The TMR film is configured by a lower metal layer, an antiferromagnetic layer, a ferromagnetic pinned layer, an intermediate layer, a ferromagnetic free layer, and an upper metal layer. An air-bearing surface protection layer, including a silicon nitride film about 2.0 nm in thickness, is formed on a recording medium facing surface of the TMR film. Since silicon in the silicon nitride film is inactivated by nitrogen, the silicon does not damage the TMR film. Therefore, noise of the read element can be controlled to be at a low level.
摘要翻译：本发明的实施例通过减小磁头的空气轴承表面保护层的厚度并且抑制信噪比（S / N）比的降低来提供适于高收率地高密度记录的磁头的读取元素。根据一个实施例，磁头的读取元件在下磁屏蔽层和上磁屏蔽层之间具有磁阻效应膜（TMR膜），并且在该磁屏蔽的两侧具有补充膜和磁畴控制膜 TMR膜。 TMR膜由下金属层，反铁磁层，铁磁性钉扎层，中间层，铁磁性自由层和上金属层构成。在TMR膜的面向记录介质的表面上形成包含厚度约为2.0nm的氮化硅膜的空气轴承表面保护层。由于氮化硅膜中的硅被氮气灭活，因此硅不会损坏TMR膜。因此，可以将读取元件的噪声控制在低水平。

8. 发明申请

US20100123183A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非挥发性半导体存储器件及其制造方法
公开(公告)号：US20100123183A1
公开(公告)日：2010-05-20
申请号：US12622816
申请日：2009-11-20
申请人： Katsuhiko YAMAMOTO , Tadashi Terasaki , Yoshiki Yonamoto , Hirotaka Hamamura
发明人： Katsuhiko YAMAMOTO , Tadashi Terasaki , Yoshiki Yonamoto , Hirotaka Hamamura
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/28282 , H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/3115 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/7885
摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.
摘要翻译：提供了一种能够提高非易失性存储器的记忆保持特性的技术。特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性非易失性存储器的保留特性。在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

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