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    • 4. 发明申请
    • Substrate processing apparatus and manufacturing method of semiconductor device
    • 基板加工装置及半导体装置的制造方法
    • US20100317199A1
    • 2010-12-16
    • US12801444
    • 2010-06-09
    • Tadashi HorieAkito HiranoTadashi Terasaki
    • Tadashi HorieAkito HiranoTadashi Terasaki
    • H01L21/46
    • C23C16/34C23C16/56H01J37/3244H01J37/32449H01J2237/2001H01L21/76856H01L21/76862H01L28/60
    • To reduce a residual amount of chlorine atoms and oxygen atoms in a metal nitride film, and improve oxidation resistance of the metal nitride, film, in a temperature range of not deteriorating the characteristics of other film adjacent to the metal nitride film. A substrate processing apparatus is provided, comprising: a processing chamber into which a substrate is loaded, having thereon a substrate containing oxygen atoms, chlorine atoms, and metal atoms; a substrate support part for supporting and heating the substrate in the processing chamber; a gas supply part for supplying nitrogen atoms-containing gas and hydrogen atoms-containing gas into the processing chamber; a gas exhaust part for exhausting inside of the processing chamber; a plasma generation part for exciting the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber; and a control part for controlling the substrate support part, the gas supply part, and the plasma generation part.
    • 为了减少金属氮化物膜中的氯原子和氧原子的残留量,并且在不会使与金属氮化物膜相邻的其它膜的特性不劣化的温度范围内提高金属氮化物膜的抗氧化性。 提供了一种基板处理装置,包括:处理室,其上装载有基板,其上具有含有氧原子,氯原子和金属原子的基板; 用于在处理室中支撑和加热衬底的衬底支撑部分; 用于向所述处理室供给含氮原子的气体和含氢原子的气体的气体供给部; 用于排出处理室内部的排气部分; 用于激发含氮原子的气体和供给到处理室中的含氢原子气体的等离子体产生部件; 以及用于控制基板支撑部分,气体供应部分和等离子体产生部分的控制部分。
    • 5. 发明授权
    • Producing method of semiconductor device
    • 半导体器件的生产方法
    • US07795156B2
    • 2010-09-14
    • US11664287
    • 2005-10-31
    • Tadashi TerasakiAkito HiranoMasanori NakayamaUnryu Ogawa
    • Tadashi TerasakiAkito HiranoMasanori NakayamaUnryu Ogawa
    • H01L21/469
    • H01L21/28273H01J37/32678H01L21/0214H01L21/02238H01L21/02255H01L21/02332H01L21/02337H01L21/0234H01L21/31662
    • Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
    • 公开了一种半导体器件的制造方法,包括形成闪光器件的隧道绝缘膜的步骤,该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜 氮化和热氮化,等离子体氮化通过使用通过等离子体激活的气体进行氮化处理,该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体,并且使用热进行氮化处理 通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤, 热氮化。