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    • 2. 发明授权
    • Group III nitride-based compound semiconductor device
    • III族氮化物类化合物半导体器件
    • US07948061B2
    • 2011-05-24
    • US12219695
    • 2008-07-25
    • Yoshiki SaitoYasuhisa Ushida
    • Yoshiki SaitoYasuhisa Ushida
    • H01L29/04
    • H01L33/32H01L33/02H01L33/16H01L33/20H01L33/382
    • A characteristic feature of the invention is to form, in a Group III nitride-based compound semiconductor device, a negative electrode on a surface other than a Ga-polar C-plane. In a Group III nitride-based compound semiconductor light-emitting device, there are formed, on an R-plane sapphire substrate, an n-contact layer, a layer for improving static breakdown voltage, an n-cladding layer made of a multi-layer structure having ten stacked sets of an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer, a multi-quantum well (MQW) light-emitting layer made of a combination of In0.25Ga0.75N well layers and GaN barrier layers stacked alternatingly, a p-cladding layer made of a multi-layer structure including a p-type Al0.3Ga0.7N layer and a p-In0.08Ga0.92N layer, and a p-contact layer (thickness: about 80 nm) made of a stacked structure including two p-GaN layers having different magnesium concentrations. Through etching, the n-contact layer having a thickness direction along the c-axis is provided with stripe-patterned microditches each having side walls, which assume a C-plane, whereby ohmic contact is established between a negative electrode and each C-plane side wall.
    • 本发明的特征在于,在III族氮化物系化合物半导体装置中,在Ga极C面以外的表面上形成负极。 在III族氮化物系化合物半导体发光元件中,在R面蓝宝石衬底上形成n接触层,用于提高静电击穿电压的层,由多层结构形成的n包层, 具有未堆积的In0.1Ga0.9N层,未掺杂的GaN层和硅(Si)掺杂的GaN层的十个堆叠组的多层结构,由In0组合的多量子阱(MQW)发光层 0.25Ga0.75N阱层和GaN势垒层交替堆叠,由包括p型Al0.3Ga0.7N层和p-In0.08Ga0.92N层的多层结构制成的p型包层,p - 接触层(厚度:约80nm),其由包括具有不同镁浓度的两个p-GaN层的堆叠结构制成。 通过蚀刻,具有沿着c轴的厚度方向的n接触层设置有条形图案化的每个具有侧壁的微阵列,其呈现C面,由此在负极和每个C面之间建立欧姆接触 侧墙。
    • 3. 发明申请
    • Group III nitride compound semiconductor light emitting element and manufacturing method thereof
    • III族氮化物化合物半导体发光元件及其制造方法
    • US20100244042A1
    • 2010-09-30
    • US12659763
    • 2010-03-19
    • Yoshiki SaitoYasuhisa Ushida
    • Yoshiki SaitoYasuhisa Ushida
    • H01L33/44H01L33/30H01L21/20
    • H01L33/24H01L33/08H01L33/32
    • A group III nitride compound semiconductor light emitting element comprising: a first layer which is a single crystal layer of a group III nitride compound semiconductor, the first layer formed on the buffer layer and including a threading dislocation; a second layer of a group III nitride compound semiconductor formed on the first layer, the second layer including a pit and a flat portion, wherein the pit continuing from the threading dislocations and having a cross section parallel to the substrate expanding in a growth direction of the second layer; a luminescent layer including a flat portion and a pit corresponding to those of the second layer. The indium concentration in the pit of the luminescent layer is smaller than that in the flat portion of the luminescent layer. A luminescent spectrum width of thereof is expanded as compared to a case where the pit does not exist.
    • 一种III族氮化物化合物半导体发光元件,包括:第一层,其是III族氮化物化合物半导体的单晶层,所述第一层形成在所述缓冲层上并且包括穿透位错; 形成在第一层上的第III族氮化物化合物半导体的第二层,第二层包括凹坑和平坦部分,其中所述凹坑从穿透位错继续并且具有平行于基板沿其生长方向扩展的横截面 第二层; 包括平坦部分和与第二层相对应的凹坑的发光层。 发光层的凹坑中的铟浓度比发光层的平坦部的铟浓度小。 与不存在凹坑的情况相比,其发光光谱宽度扩大。
    • 6. 发明申请
    • Group III nitride-based compound semiconductor device
    • III族氮化物类化合物半导体器件
    • US20090065900A1
    • 2009-03-12
    • US12219695
    • 2008-07-25
    • Yoshiki SaitoYasuhisa Ushida
    • Yoshiki SaitoYasuhisa Ushida
    • H01L29/20
    • H01L33/32H01L33/02H01L33/16H01L33/20H01L33/382
    • A characteristic feature of the invention is to form, in a Group III nitride-based compound semiconductor device, a negative electrode on a surface other than a Ga-polar C-plane. In a Group III nitride-based compound semiconductor light-emitting device, there are formed, on an R-plane sapphire substrate, an n-contact layer, a layer for improving static breakdown voltage, an n-cladding layer made of a multi-layer structure having ten stacked sets of an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer, a multi-quantum well (MQW) light-emitting layer made of a combination of In0.25Ga0.75N well layers and GaN barrier layers stacked alternatingly, a p-cladding layer made of a multi-layer structure including a p-type Al0.3Ga0.7N layer and a p-In0.08Ga0.92N layer, and a p-contact layer (thickness: about 80 nm) made of a stacked structure including two p-GaN layers having different magnesium concentrations. Through etching, the n-contact layer having a thickness direction along the c-axis is provided with stripe-patterned microditches each having side walls, which assume a C-plane, whereby ohmic contact is established between a negative electrode and each C-plane side wall.
    • 本发明的特征在于,在III族氮化物系化合物半导体装置中,在Ga极C面以外的表面上形成负极。 在III族氮化物系化合物半导体发光元件中,在R面蓝宝石衬底上形成n接触层,用于提高静电击穿电压的层,由多层结构形成的n包层, 具有未堆积的In0.1Ga0.9N层,未掺杂的GaN层和硅(Si)掺杂的GaN层的十个堆叠组的多层结构,由In0组合的多量子阱(MQW)发光层 0.25Ga0.75N阱层和GaN势垒层交替堆叠,由包括p型Al0.3Ga0.7N层和p-In0.08Ga0.92N层的多层结构制成的p型包层,p - 接触层(厚度:约80nm),其由包括具有不同镁浓度的两个p-GaN层的堆叠结构制成。 通过蚀刻,具有沿着c轴的厚度方向的n接触层设置有条形图案化的每个具有侧壁的微阵列,其呈现C面,由此在负极和每个C面之间建立欧姆接触 侧墙。
    • 7. 发明授权
    • Group III nitride semiconductor light-emitting device
    • III族氮化物半导体发光器件
    • US08598599B2
    • 2013-12-03
    • US13064454
    • 2011-03-25
    • Yoshiki SaitoKoji OkunoYasuhisa Ushida
    • Yoshiki SaitoKoji OkunoYasuhisa Ushida
    • H01L33/00
    • H01L33/02H01L33/007H01L33/32
    • The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.
    • 本发明提供一种III族氮化物半导体发光器件,其主表面是提供内部电场为零的平面,并且其表现出改善的发射性能。 发光装置包括:蓝宝石基板,其表面具有从上方观察的条纹图案的多个凹部; 形成在蓝宝石衬底的凹陷表面上的n接触层; 形成在所述n接触层上的发光层; 形成在发光层上的电子阻挡层; 形成在电子阻挡层上的p型接触层; p电极; 和n电极。 电子阻挡层的厚度为2〜8nm,由Al组成比例为20〜30%的由Mg掺杂的AlGaN构成。
    • 8. 发明申请
    • METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
    • 生产III族氮化物半导体发光器件的方法
    • US20110244610A1
    • 2011-10-06
    • US13074714
    • 2011-03-29
    • Yoshiki SAITOKoji OkunoYasuhisa Ushida
    • Yoshiki SAITOKoji OkunoYasuhisa Ushida
    • H01L33/22
    • H01L33/20H01L33/007H01L33/0079
    • The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits.
    • 本发明提供一种主要表面是提供内部电场为零的平面的III族氮化物半导体发光器件的制造方法,其表现出提高的光提取性能。 在制造方法中,对a面蓝宝石基板的一个表面进行干蚀刻,从而形成具有从上方观察而成蜂窝状图案的多个台面的压花图案; 以及由具有m面主表面的III族氮化物半导体层形成的n型层,发光层和p型层依次层叠在蓝宝石基板的表面上 在其上形成台面。 接着,在p型层上形成p电极,p电极通过金属层与支撑基板接合。 接下来,通过激光剥离处理去除蓝宝石衬底。 在这样暴露的n型层的表面上形成具有通过蓝宝石衬底的压花图案的台面的转印提供的凹痕的压花图案。 然后,对n型层的压花图案表面进行湿式蚀刻,从而形成许多蚀刻凹坑。
    • 9. 发明申请
    • Group III nitride semiconductor light-emitting device
    • III族氮化物半导体发光器件
    • US20110240956A1
    • 2011-10-06
    • US13064454
    • 2011-03-25
    • Yoshiki SaitoKoji OkunoYasuhisa Ushida
    • Yoshiki SaitoKoji OkunoYasuhisa Ushida
    • H01L33/06
    • H01L33/02H01L33/007H01L33/32
    • The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.
    • 本发明提供一种III族氮化物半导体发光器件,其主表面是提供内部电场为零的平面,并且其表现出改善的发射性能。 发光装置包括:蓝宝石基板,其表面具有从上方观察的条纹图案的多个凹部; 形成在蓝宝石衬底的凹陷表面上的n接触层; 形成在所述n接触层上的发光层; 形成在发光层上的电子阻挡层; 形成在电子阻挡层上的p型接触层; p电极; 和n电极。 电子阻挡层的厚度为2〜8nm,由Al组成比例为20〜30%的由Mg掺杂的AlGaN构成。