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1. 发明申请

US20130017639A1 METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：用于生产III族氮化物半导体发光器件的方法
公开(公告)号：US20130017639A1
公开(公告)日：2013-01-17
申请号：US13545902
申请日：2012-07-10
申请人： Shinya BOYAMA , Yasuhisa Ushida
发明人： Shinya BOYAMA , Yasuhisa Ushida
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/14
摘要： The present invention is a method for producing a light- emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process.
摘要翻译：本发明是一种发光器件的制造方法，该发光器件的p接触层具有p型导电和与电极的接触电阻降低。在p包层上，通过MOCVD，形成掺杂有Mg的第一p接触层的GaN。随后，在700℃的后续工艺中将温度降低到形成第二p接触层的生长温度之后，停止供应氨并将载气从氢转换成氮。由此，Mg在第一p接触层中被激活，并且第一p接触层具有p型导电。接下来，通过使用氮气作为载气的MOCVD在第一p接触层上形成掺杂有Mg的第一p接触层，同时保持温度为700℃，这是先前工艺的温度。

2. 发明授权

US08546836B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08546836B2
公开(公告)日：2013-10-01
申请号：US13067588
申请日：2011-06-10
申请人： Masao Kamiya , Shinya Boyama , Yasuhisa Ushida
发明人： Masao Kamiya , Shinya Boyama , Yasuhisa Ushida
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed by removing a part of the second semiconductor layer and the light-emitting layer, a concave portion formed in the exposed portion of the first semiconductor layer, a first electrode formed on the concave portion and being in ohmic contact with the first semiconductor layer, and a second electrode being in ohmic contact with the second semiconductor layer and formed surrounding the first electrode.
摘要翻译：发光元件包括具有氮化物半导体的半导体叠层结构，通过层叠第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的发光层和第二半导体层通过去除第二半导体层和发光层的一部分来露出第一半导体层，形成在第一半导体层的暴露部分中的凹部，形成在凹部上并且与欧姆接触的第一电极与第一半导体层和第二电极与第二半导体层欧姆接触并形成在第一电极周围。

3. 发明授权

US08980657B2 Method for producing a group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08980657B2
公开(公告)日：2015-03-17
申请号：US13545902
申请日：2012-07-10
申请人： Shinya Boyama , Yasuhisa Ushida
发明人： Shinya Boyama , Yasuhisa Ushida
IPC分类号： H01L21/00 , H01L33/00 , H01L21/02 , H01L33/14
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/14
摘要： The present invention is a method for producing a light-emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process.
摘要翻译：本发明是一种发光装置的制造方法，该发光装置的p型接触层与电极具有p型导电性和降低的接触电阻。在p包层上，通过MOCVD，形成掺杂有Mg的第一p接触层的GaN。随后，在700℃的后续工艺中将温度降低到形成第二p接触层的生长温度之后，停止供应氨并将载气从氢转换成氮。由此，Mg在第一p接触层中被激活，并且第一p接触层具有p型导电。接下来，通过使用氮气作为载气的MOCVD在第一p接触层上形成掺杂有Mg的第一p接触层，同时保持温度为700℃，这是先前工艺的温度。

4. 发明授权

US08518806B2 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体的制造方法，含有III族氮化物系化合物半导体的晶片和III族氮化物系化合物半导体装置
公开(公告)号：US08518806B2
公开(公告)日：2013-08-27
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

5. 发明申请

US20120049236A1 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US20120049236A1
公开(公告)日：2012-03-01
申请号：US13067588
申请日：2011-06-10
申请人： Masao Kamiya , Shinya Boyama , Yasuhisa Ushida
发明人： Masao Kamiya , Shinya Boyama , Yasuhisa Ushida
IPC分类号： H01L33/40
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed by removing a part of the second semiconductor layer and the light-emitting layer, a concave portion formed in the exposed portion of the first semiconductor layer, a first electrode formed on the concave portion and being in ohmic contact with the first semiconductor layer, and a second electrode being in ohmic contact with the second semiconductor layer and formed surrounding the first electrode.
摘要翻译：发光元件包括具有氮化物半导体的半导体叠层结构，通过层叠第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的发光层和第二半导体层通过去除第二半导体层和发光层的一部分来露出第一半导体层，形成在第一半导体层的暴露部分中的凹部，形成在凹部上并且与欧姆接触的第一电极与第一半导体层和第二电极与第二半导体层欧姆接触并形成在第一电极周围。

6. 发明申请

US20100308437A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：用于生产III族氮化物化合物半导体的方法，包括III族氮化物化合物半导体的滤波器和基于III族氮化物的化合物半导体器件
公开(公告)号：US20100308437A1
公开(公告)日：2010-12-09
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

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