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1. 发明授权

US08598599B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08598599B2
公开(公告)日：2013-12-03
申请号：US13064454
申请日：2011-03-25
申请人： Yoshiki Saito , Koji Okuno , Yasuhisa Ushida
发明人： Yoshiki Saito , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/007 , H01L33/32
摘要： The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.
摘要翻译：本发明提供一种III族氮化物半导体发光器件，其主表面是提供内部电场为零的平面，并且其表现出改善的发射性能。发光装置包括：蓝宝石基板，其表面具有从上方观察的条纹图案的多个凹部; 形成在蓝宝石衬底的凹陷表面上的n接触层; 形成在所述n接触层上的发光层; 形成在发光层上的电子阻挡层; 形成在电子阻挡层上的p型接触层; p电极; 和n电极。电子阻挡层的厚度为2〜8nm，由Al组成比例为20〜30％的由Mg掺杂的AlGaN构成。

2. 发明申请

US20110244610A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：生产III族氮化物半导体发光器件的方法
公开(公告)号：US20110244610A1
公开(公告)日：2011-10-06
申请号：US13074714
申请日：2011-03-29
申请人： Yoshiki SAITO , Koji Okuno , Yasuhisa Ushida
发明人： Yoshiki SAITO , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L33/22
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079
摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits.
摘要翻译：本发明提供一种主要表面是提供内部电场为零的平面的III族氮化物半导体发光器件的制造方法，其表现出提高的光提取性能。在制造方法中，对a面蓝宝石基板的一个表面进行干蚀刻，从而形成具有从上方观察而成蜂窝状图案的多个台面的压花图案; 以及由具有m面主表面的III族氮化物半导体层形成的n型层，发光层和p型层依次层叠在蓝宝石基板的表面上在其上形成台面。接着，在p型层上形成p电极，p电极通过金属层与支撑基板接合。接下来，通过激光剥离处理去除蓝宝石衬底。在这样暴露的n型层的表面上形成具有通过蓝宝石衬底的压花图案的台面的转印提供的凹痕的压花图案。然后，对n型层的压花图案表面进行湿式蚀刻，从而形成许多蚀刻凹坑。

3. 发明申请

US20130254637A1 ENCODING APPARATUS, CONTROL METHOD OF ENCODING APPARATUS, AND MEMORY DEVICE 有权
标题翻译：编码装置，编码装置的控制方法和存储装置
公开(公告)号：US20130254637A1
公开(公告)日：2013-09-26
申请号：US13600929
申请日：2012-08-31
申请人： Yoshiki Saito , Shinichi Kanno , Toshikatsu Hida
发明人： Yoshiki Saito , Shinichi Kanno , Toshikatsu Hida
IPC分类号： H03M13/05
CPC分类号： H03M13/05 , H03M13/6516
摘要： According to an embodiment, an encoding apparatus includes a parameter holding unit configured to hold a parameter; an error-detecting code holding unit configured to hold an error-detecting code that is generated from the parameter; an error detecting unit configured to detect an error in the parameter, which is held in the parameter holding unit, with the use of the error-detecting code held in the error-detecting code holding unit; an error correcting unit configured to correct the error detected by the error detecting unit; a selecting unit configured to select the parameter that has been subjected to error correction by the error correcting unit; and an encoding unit configured to encode data with the use of the parameter selected by the selecting unit.
摘要翻译：根据实施例，一种编码装置包括：配置为保存参数的参数保持单元; 错误检测码保持单元，被配置为保存从该参数生成的检错码; 错误检测单元，被配置为使用保持在错误检测码保持单元中的检错码来检测保存在参数保持单元中的参数中的错误; 错误校正单元，被配置为校正由所述错误检测单元检测到的所述错误; 选择单元，被配置为通过误差校正单元选择已经经过纠错的参数; 以及编码单元，被配置为使用由所述选择单元选择的参数来对数据进行编码。

4. 发明申请

US20110240956A1 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US20110240956A1
公开(公告)日：2011-10-06
申请号：US13064454
申请日：2011-03-25
申请人： Yoshiki Saito , Koji Okuno , Yasuhisa Ushida
发明人： Yoshiki Saito , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L33/06
CPC分类号： H01L33/02 , H01L33/007 , H01L33/32
摘要： The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.
摘要翻译：本发明提供一种III族氮化物半导体发光器件，其主表面是提供内部电场为零的平面，并且其表现出改善的发射性能。发光装置包括：蓝宝石基板，其表面具有从上方观察的条纹图案的多个凹部; 形成在蓝宝石衬底的凹陷表面上的n接触层; 形成在所述n接触层上的发光层; 形成在发光层上的电子阻挡层; 形成在电子阻挡层上的p型接触层; p电极; 和n电极。电子阻挡层的厚度为2〜8nm，由Al组成比例为20〜30％的由Mg掺杂的AlGaN构成。

5. 发明申请

US20090039373A1 Group III nitride-based compound semiconductor light emitting device 审中-公开
标题翻译： III族氮化物系化合物半导体发光元件
公开(公告)号：US20090039373A1
公开(公告)日：2009-02-12
申请号：US12219455
申请日：2008-07-22
申请人： Yoshiki Saito , Takayoshi Yajima , Yasuhisa Ushida
发明人： Yoshiki Saito , Takayoshi Yajima , Yasuhisa Ushida
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L33/42
摘要： A group III nitride-based compound semiconductor light emitting device includes a polarity inversion layer including a surface with a convex portion, and a transparent electrode formed on the polarity inversion layer. The polarity inversion layer may have a magnesium concentration of not less than 1×1020 atoms/cm3, or not less than 2×1020 atoms/cm3 and not more than 5×1021 atoms/cm3. The polarity inversion layer may be formed of AlxGa1−xN (0≦x
摘要翻译： III族氮化物类化合物半导体发光器件包括具有凸部表面的极性反转层和形成在极性反转层上的透明电极。极性反转层可以具有不小于1×10 20原子/ cm 3或不小于2×10 20原子/ cm 3且不大于5×10 21原子/ cm 3的镁浓度。极性反转层可以由掺杂有镁的Al x Ga 1-x N（0 <= x <1）形成。

6. 发明授权

US09331713B2 Encoding apparatus, control method of encoding apparatus, and memory device 有权
标题翻译：编码装置，编码装置的控制方法和存储装置
公开(公告)号：US09331713B2
公开(公告)日：2016-05-03
申请号：US13600929
申请日：2012-08-31
申请人： Yoshiki Saito , Shinichi Kanno , Toshikatsu Hida
发明人： Yoshiki Saito , Shinichi Kanno , Toshikatsu Hida
IPC分类号： H03M13/05 , H03M13/00
CPC分类号： H03M13/05 , H03M13/6516
摘要： According to an embodiment, an encoding apparatus includes a parameter holding unit configured to hold a parameter; an error-detecting code holding unit configured to hold an error-detecting code that is generated from the parameter; an error detecting unit configured to detect an error in the parameter, which is held in the parameter holding unit, with the use of the error-detecting code held in the error-detecting code holding unit; an error correcting unit configured to correct the error detected by the error detecting unit; a selecting unit configured to select the parameter that has been subjected to error correction by the error correcting unit; and an encoding unit configured to encode data with the use of the parameter selected by the selecting unit.
摘要翻译：根据实施例，一种编码装置包括：配置为保存参数的参数保持单元; 错误检测码保持单元，被配置为保存从该参数生成的检错码; 错误检测单元，被配置为使用保持在错误检测码保持单元中的检错码来检测保存在参数保持单元中的参数中的错误; 错误校正单元，被配置为校正由所述错误检测单元检测到的所述错误; 选择单元，被配置为通过误差校正单元选择已经经过纠错的参数; 以及编码单元，被配置为使用由所述选择单元选择的参数来对数据进行编码。

7. 发明授权

US08518806B2 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体的制造方法，含有III族氮化物系化合物半导体的晶片和III族氮化物系化合物半导体装置
公开(公告)号：US08518806B2
公开(公告)日：2013-08-27
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

8. 发明申请

US20130020608A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20130020608A1
公开(公告)日：2013-01-24
申请号：US13554796
申请日：2012-07-20
申请人： Hiroaki MAKINO , Yoshiki Saito
发明人： Hiroaki MAKINO , Yoshiki Saito
IPC分类号： H01L33/42
CPC分类号： H01L33/40 , H01L33/38 , H01L33/42
摘要： A Group III nitride semiconductor light-emitting device exhibiting reduced contact resistance between a p contact layer and an ITO electrode. The Group III nitride semiconductor light-emitting device has an AlGaN dot-like structure on the p contact layer, and an ITO electrode on the p contact layer and the dot-like structure. The dot-like structure has a structure in which a plurality of AlGaN dots are discretely distributed on the top surface of the p contact layer. The dot-like structure is bonded to oxygen, and oxygen increases on an interface between the p contact layer and the ITO electrode.
摘要翻译：在p接触层和ITO电极之间具有降低的接触电阻的III族氮化物半导体发光器件。 III族氮化物半导体发光器件在p接触层上具有AlGaN点状结构，在p接触层上具有ITO电极和点状结构。点状结构具有多个AlGaN点离散地分布在p接触层的顶表面上的结构。点状结构键合到氧上，并且在p接触层和ITO电极之间的界面上氧增加。

9. 发明申请

US20100308437A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE 有权
标题翻译：用于生产III族氮化物化合物半导体的方法，包括III族氮化物化合物半导体的滤波器和基于III族氮化物的化合物半导体器件
公开(公告)号：US20100308437A1
公开(公告)日：2010-12-09
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

10. 发明申请

US20090065900A1 Group III nitride-based compound semiconductor device 有权
标题翻译： III族氮化物类化合物半导体器件
公开(公告)号：US20090065900A1
公开(公告)日：2009-03-12
申请号：US12219695
申请日：2008-07-25
申请人： Yoshiki Saito , Yasuhisa Ushida
发明人： Yoshiki Saito , Yasuhisa Ushida
IPC分类号： H01L29/20
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16 , H01L33/20 , H01L33/382
摘要： A characteristic feature of the invention is to form, in a Group III nitride-based compound semiconductor device, a negative electrode on a surface other than a Ga-polar C-plane. In a Group III nitride-based compound semiconductor light-emitting device, there are formed, on an R-plane sapphire substrate, an n-contact layer, a layer for improving static breakdown voltage, an n-cladding layer made of a multi-layer structure having ten stacked sets of an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer, a multi-quantum well (MQW) light-emitting layer made of a combination of In0.25Ga0.75N well layers and GaN barrier layers stacked alternatingly, a p-cladding layer made of a multi-layer structure including a p-type Al0.3Ga0.7N layer and a p-In0.08Ga0.92N layer, and a p-contact layer (thickness: about 80 nm) made of a stacked structure including two p-GaN layers having different magnesium concentrations. Through etching, the n-contact layer having a thickness direction along the c-axis is provided with stripe-patterned microditches each having side walls, which assume a C-plane, whereby ohmic contact is established between a negative electrode and each C-plane side wall.
摘要翻译：本发明的特征在于，在III族氮化物系化合物半导体装置中，在Ga极C面以外的表面上形成负极。在III族氮化物系化合物半导体发光元件中，在R面蓝宝石衬底上形成n接触层，用于提高静电击穿电压的层，由多层结构形成的n包层，具有未堆积的In0.1Ga0.9N层，未掺杂的GaN层和硅（Si）掺杂的GaN层的十个堆叠组的多层结构，由In0组合的多量子阱（MQW）发光层 0.25Ga0.75N阱层和GaN势垒层交替堆叠，由包括p型Al0.3Ga0.7N层和p-In0.08Ga0.92N层的多层结构制成的p型包层，p - 接触层（厚度：约80nm），其由包括具有不同镁浓度的两个p-GaN层的堆叠结构制成。通过蚀刻，具有沿着c轴的厚度方向的n接触层设置有条形图案化的每个具有侧壁的微阵列，其呈现C面，由此在负极和每个C面之间建立欧姆接触侧墙。

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