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1. 发明授权

US07465673B2 Method and apparatus for bilayer photoresist dry development 失效
标题翻译：用于双层光致抗蚀剂干式显影的方法和装置
公开(公告)号：US07465673B2
公开(公告)日：2008-12-16
申请号：US10736782
申请日：2003-12-17
申请人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
发明人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , G03F7/091 , H01L21/31144 , H01L21/76802
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).
摘要翻译：一种用于在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氮（N），氢（H）和氧（O）的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。工艺气体可以例如构成基于NH 3 / O 2，N 2 / H 2 / O 2，N 2 / H 2 / CO，NH 3 / CO或NH 3 / CO / O 2的化学。另外，工艺化学可以进一步包括添加氦。本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氮（N），氢（H）和氧（O）的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。

2. 发明申请

US20130023120A1 METHOD OF FORMING MASK PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成掩模图案的方法和制造半导体器件的方法
公开(公告)号：US20130023120A1
公开(公告)日：2013-01-24
申请号：US13638662
申请日：2011-03-28
申请人： Hidetami Yaegashi , Yoshiki Igarashi , Kazuki Narishige , Takahito Mukawa
发明人： Hidetami Yaegashi , Yoshiki Igarashi , Kazuki Narishige , Takahito Mukawa
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , H01J37/32091 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31116 , H01L21/32139
摘要： A method of forming a mask pattern includes a first pattern forming step of etching an anti-reflection coating film by using as a mask a first line portion made up of a photo resist film formed on the anti-reflection film to form a pattern including a second line portion made up of the photo resist film and the anti-reflection film; an irradiation step of irradiating the photo resist film with electrons; a silicon oxide film forming step to cover the second line portion isotropically; and an etch back step of etching back the silicon oxide film such that the silicon oxide film is removed from the top of the second line portion as sidewalls of the second line portion. The method further includes a second pattern forming step of ashing the second line portion to form a mask pattern including a third line portion made up of the silicon oxide film and remains.
摘要翻译：形成掩模图案的方法包括：通过使用由形成在防反射膜上的光致抗蚀剂膜构成的第一线部分作为掩模来蚀刻抗反射涂膜的第一图案形成步骤，以形成包括由光致抗蚀剂膜和抗反射膜构成的第二线部分; 用电子照射光致抗蚀剂膜的照射步骤; 氧化硅膜形成步骤，各向同性地覆盖第二线部分; 以及回蚀氧化硅膜的回蚀步骤，使得氧化硅膜从第二管线部分的顶部去除，作为第二管线部分的侧壁。该方法还包括第二图形形成步骤，灰化第二线部分以形成包括由氧化硅膜构成的第三线部分的掩模图案并保留。

3. 发明申请

US20050106875A1 Plasma ashing method 审中-公开
标题翻译：等离子体灰化方法
公开(公告)号：US20050106875A1
公开(公告)日：2005-05-19
申请号：US10948241
申请日：2004-09-24
申请人： Kazuhiro Kubota , Yoshiki Igarashi , Shigeru Tahara , Shin Okamoto , Toshihiko Shindo , Yoshinobu Ooya
发明人： Kazuhiro Kubota , Yoshiki Igarashi , Shigeru Tahara , Shin Okamoto , Toshihiko Shindo , Yoshinobu Ooya
IPC分类号： G03F7/42 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31116 , H01J2237/3342 , H01L21/31138
摘要： A plasma ashing method of an object to be processed removes a resist film therefrom in a processing vessel after etching a part of a low dielectric constant film with the resist film having a pattern thereon as a mask in the processing vessel. The plasma ashing method includes a first and a second ashing processes. The first ashing process removes deposits off an inner wall of the processing vessel by using a first processing gas including at least O2 gas while controlling the pressure in the processing vessel to be smaller than or equal to 20 mTorr. The second ashing process removes the resist film by using a second processing gas including at least O2 gas.
摘要翻译：在处理容器内蚀刻一部分具有图案的抗蚀剂膜作为掩模的低介电常数膜的一部分后，处理容器中的等离子体灰化方法从处理容器中除去抗蚀剂膜。等离子体灰化方法包括第一和第二灰化过程。第一灰化过程通过使用包括至少O 2 2气体的第一处理气体同时将处理容器中的压力控制在小于或等于20mTorr，从处理容器的内壁去除沉积物。第二灰化处理通过使用至少包含O 2 O 2气体的第二处理气体去除抗蚀剂膜。

4. 发明授权

US08518830B2 Plasma etching method and storage medium 有权
标题翻译：等离子体蚀刻方法和存储介质
公开(公告)号：US08518830B2
公开(公告)日：2013-08-27
申请号：US13428223
申请日：2012-03-23
申请人： Yoshiki Igarashi , Kazuki Narishige
发明人： Yoshiki Igarashi , Kazuki Narishige
IPC分类号： H01L21/311
CPC分类号： H01L21/31122 , H01J37/32082 , H01L21/31144
摘要： Disclosed is a plasma etching method capable of carrying out an etching process while preventing an etching shape defect such as a bowing from occurring. The plasma etching method includes etching an organic film formed on the substrate to a middle depth using an inorganic film as a mask by generating plasma between an upper electrode a surface of which is formed with a silicon containing material and a lower electrode where a substrate to be processed is placed thereon in a processing chamber; forming a protective film including the silicon containing material of the upper electrode on a side wall of an etching region formed from the etching process by applying a negative DC voltage on the upper electrode while generating the plasma; and continuing the etching process using the plasma thereby etching the organic film to a predetermined depth.
摘要翻译：公开了一种能够进行蚀刻处理同时防止诸如弯曲的蚀刻形状缺陷发生的等离子体蚀刻方法。等离子体蚀刻方法包括：使用无机膜作为掩模，将形成在基板上的有机膜蚀刻到中间深度，在其上形成有含硅材料的上电极和下电极之间产生等离子体，被处理在其上放置在处理室中; 通过在产生等离子体的同时在上部电极上施加负的直流电压，在由蚀刻工艺形成的蚀刻区域的侧壁上形成包括上部电极的含硅材料的保护膜; 并且继续使用等离子体的蚀刻工艺，从而将有机膜蚀刻到预定深度。

5. 发明授权

US08404595B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US08404595B2
公开(公告)日：2013-03-26
申请号：US11860788
申请日：2007-09-25
申请人： Masanobu Honda , Manabu Sato , Yoshiki Igarashi
发明人： Masanobu Honda , Manabu Sato , Yoshiki Igarashi
IPC分类号： H01L23/302 , H01L21/461 , B23P15/00 , C03C25/00 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , B44C1/22
CPC分类号： H01L21/467 , H01J37/32091 , H01J37/32165 , H01L21/31116
摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.
摘要翻译：用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源，设置成面对第一电极的电极。该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二电极。通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

6. 发明申请

US20050269294A1 Etching method 审中-公开
标题翻译：蚀刻方法
公开(公告)号：US20050269294A1
公开(公告)日：2005-12-08
申请号：US11147197
申请日：2005-06-08
申请人： Yoshiki Igarashi , Wakako Naito
发明人： Yoshiki Igarashi , Wakako Naito
IPC分类号： B08B7/00 , C23F1/00 , H01L21/311 , H01L21/316 , H01L21/318
CPC分类号： H01L21/31116 , B08B7/0035 , H01L21/31612 , H01L21/3185
摘要： In an etching method, multiple etchings are sequentially performed in a single processing vessel on a laminated film having a plurality of layers formed on a substrate to be processed, without unloading the substrate to be processed from the vessel. Between the etchings, a cleaning processing for removing deposits from the processing vessel by using a plasma of a cleaning gas is performed. The cleaning gas is O2 containing gas, and preferably, a gaseous mixture of O2 and N2 gas. Further, the cleaning processing is performed under conditions of 50˜200 mTorr in the processing vessel; 5˜15 mL/min of O2 flow rate; and 100˜400 mL/min of N2 flow rate. The method prevents etching characteristics from being affected due to a memory effect, while offering the advantages of an all-in-one etching.
摘要翻译：在蚀刻方法中，在具有形成在待处理基板上的多个层的层压膜上的单个处理容器中顺序地进行多次蚀刻，而不从容器卸载待加工的基板。在蚀刻之间，执行通过使用清洁气体的等离子体从处理容器中去除沉积物的清洁处理。清洁气体是含O 2气体，优选O 2和N 2气体的气体混合物。此外，清洗处理在处理容器中在50〜200mTorr的条件下进行; 5〜15mL / min的O 2流量; 和100〜400mL / min的N 2 H 2流速。该方法防止蚀刻特性受到记忆效应的影响，同时提供了一体化蚀刻的优点。

7. 发明授权

US5189372A Silencer for magnetic field gradient coils in a magnetic resonance imaging apparatus 失效
标题翻译：用于磁共振成像装置中的磁场梯度线圈的消声器
公开(公告)号：US5189372A
公开(公告)日：1993-02-23
申请号：US730095
申请日：1991-07-15
申请人： Yoshiki Igarashi , Goh Miyajima
发明人： Yoshiki Igarashi , Goh Miyajima
IPC分类号： G01R33/20 , A61B5/055 , G01R33/28 , G01R33/385
CPC分类号： G01R33/3854 , G01R33/385
摘要： A silencer for a plurality of magnetic field gradient coils in a magnetic resonance imaging apparatus, comprising a magnet for generating a stationary magnetic field, a bobbin which holds the plurality of inclined magnetic field gradient coils disposed within the magnet for generating in the stationary magnetic field gradients to impart positional information to a magnetic resonance signal, and a silencer provided between an internal space between the magnet and the bobbin and a space outside the magnet for reducing the diffusion of noise occurring due to an electric current flowing through the plurality of magnetic field gradient coils to the external space through the internal space.
摘要翻译：一种用于磁共振成像装置中的多个磁场梯度线圈的消音器，包括用于产生固定磁场的磁体，保持设置在磁体内的多个倾斜磁场梯度线圈的线轴，用于在固定磁场中产生用于将位置信息赋予磁共振信号的梯度，以及设置在磁体和线轴之间的内部空间之间的消音器和磁体外部的空间，用于减少由于流过多个磁场的电流而产生的噪声的扩散梯度线圈通过内部空间到外部空间。

8. 发明授权

US08128831B2 Plasma etching method and computer-readable storage medium 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US08128831B2
公开(公告)日：2012-03-06
申请号：US11617440
申请日：2006-12-28
申请人： Manabu Sato , Yoshiki Igarashi , Yoshimitsu Kon , Masanobu Honda
发明人： Manabu Sato , Yoshiki Igarashi , Yoshimitsu Kon , Masanobu Honda
IPC分类号： H01L21/302
CPC分类号： H01L21/0273 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.
摘要翻译：等离子体处理装置包括在处理室中彼此面对的第一和第二电极，第二电极支撑基板; 用于向第二电极施加较高频率的第一RF功率的第一RF电源; 用于将较低频率的第二RF功率施加到所述第二电极的第二RF电源; 以及用于向第一电极施加DC电压的DC电源。在通过使用等离子体处理装置蚀刻基板的等离子体蚀刻方法中，将第一和第二射频功率施加到第二电极，以将不含CF基气体的处理气体转换成等离子体，并施加DC电压从而通过使用含硅掩模在基板上蚀刻有机膜或非晶碳膜。

9. 发明申请

US20070165355A1 PLASMA ETCHING METHOD AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US20070165355A1
公开(公告)日：2007-07-19
申请号：US11617440
申请日：2006-12-28
申请人： Manabu Sato , Yoshiki Igarashi , Yoshimitsu Kon , Masanobu Honda
发明人： Manabu Sato , Yoshiki Igarashi , Yoshimitsu Kon , Masanobu Honda
IPC分类号： H01T23/00
CPC分类号： H01L21/0273 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous film on the substrate by using a silicon-containing mask.
摘要翻译：等离子体处理装置包括在处理室中彼此面对的第一和第二电极，第二电极支撑基板; 用于向第二电极施加较高频率的第一RF功率的第一RF电源; 用于将较低频率的第二RF功率施加到所述第二电极的第二RF电源; 以及用于向第一电极施加DC电压的DC电源。在通过使用等离子体处理装置蚀刻基板的等离子体蚀刻方法中，将第一和第二射频功率施加到第二电极，以将不含CF基气体的处理气体转换成等离子体，并施加DC电压从而通过使用含硅掩模在基板上蚀刻有机膜或非晶膜。

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