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1. 发明申请

US20130023120A1 METHOD OF FORMING MASK PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成掩模图案的方法和制造半导体器件的方法
公开(公告)号：US20130023120A1
公开(公告)日：2013-01-24
申请号：US13638662
申请日：2011-03-28
申请人： Hidetami Yaegashi , Yoshiki Igarashi , Kazuki Narishige , Takahito Mukawa
发明人： Hidetami Yaegashi , Yoshiki Igarashi , Kazuki Narishige , Takahito Mukawa
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , H01J37/32091 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31116 , H01L21/32139
摘要： A method of forming a mask pattern includes a first pattern forming step of etching an anti-reflection coating film by using as a mask a first line portion made up of a photo resist film formed on the anti-reflection film to form a pattern including a second line portion made up of the photo resist film and the anti-reflection film; an irradiation step of irradiating the photo resist film with electrons; a silicon oxide film forming step to cover the second line portion isotropically; and an etch back step of etching back the silicon oxide film such that the silicon oxide film is removed from the top of the second line portion as sidewalls of the second line portion. The method further includes a second pattern forming step of ashing the second line portion to form a mask pattern including a third line portion made up of the silicon oxide film and remains.
摘要翻译：形成掩模图案的方法包括：通过使用由形成在防反射膜上的光致抗蚀剂膜构成的第一线部分作为掩模来蚀刻抗反射涂膜的第一图案形成步骤，以形成包括由光致抗蚀剂膜和抗反射膜构成的第二线部分; 用电子照射光致抗蚀剂膜的照射步骤; 氧化硅膜形成步骤，各向同性地覆盖第二线部分; 以及回蚀氧化硅膜的回蚀步骤，使得氧化硅膜从第二管线部分的顶部去除，作为第二管线部分的侧壁。该方法还包括第二图形形成步骤，灰化第二线部分以形成包括由氧化硅膜构成的第三线部分的掩模图案并保留。

2. 发明授权

US07846648B2 Substrate developing method, substrate processing method and developing solution supply nozzle 有权
标题翻译：基板显影方法，基板加工方法和显影液供应喷嘴
公开(公告)号：US07846648B2
公开(公告)日：2010-12-07
申请号：US12068897
申请日：2008-02-13
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： G03F7/32
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。

3. 发明授权

US07367710B2 Developing solution supply nozzle with stirrer 有权
标题翻译：开发溶液供应喷嘴与搅拌器
公开(公告)号：US07367710B2
公开(公告)日：2008-05-06
申请号：US11010347
申请日：2004-12-14
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： B01F15/02
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution. The developing solution is supplied to the substrate by a supply nozzle having a stirrer.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。通过具有搅拌器的供给喷嘴将显影液供给到基板。

4. 发明申请

US20070148972A1 Method of repairing seed layer for damascene interconnects 审中-公开
标题翻译：修复大马士革互连种子层的方法
公开(公告)号：US20070148972A1
公开(公告)日：2007-06-28
申请号：US11643959
申请日：2006-12-22
申请人： Kenichi Hara , Mitsuaki Iwashita , Hidetami Yaegashi
发明人： Kenichi Hara , Mitsuaki Iwashita , Hidetami Yaegashi
IPC分类号： H01L21/44
CPC分类号： H01L21/76868 , H01L21/288 , H01L21/76873
摘要： Disclosed is a method of repairing, before embedding a recess with copper, defects of a seed layer formed by sputtering, when forming damascene interconnects. After a copper (silver is also available) nanoparticle-containing sol, e.g., a copper ink is applied onto a substrate, an etch back process for removing the excessive copper ink is performed by supplying an organic solvent onto the substrate. Thereafter, a disperse medium in the copper ink is evaporated by a baking process; and then a dispersant in the copper ink is removed and the nanoparticles are combined with each other to provide a continuous copper film by an annealing process. The etch back process prevents development of defects in a repaired seed layer.
摘要翻译：公开了一种在形成镶嵌互连件之前，在嵌入具有铜的凹槽之前，通过溅射形成的晶种层的缺陷来修复的方法。在铜（也可以使用银）之后，将含有纳米颗粒的溶胶，例如铜油墨施加到基底上，通过向基底上提供有机溶剂来进行用于去除过量铜油墨的回蚀工艺。此后，通过烘烤工艺蒸发铜油墨中的分散介质; 然后除去铜油墨中的分散剂，并将纳米颗粒彼此组合以通过退火工艺提供连续的铜膜。回蚀过程防止修复的种子层中的缺陷的发展。

5. 发明授权

US06884298B2 Method and system for coating and developing 失效
标题翻译：涂层和开发方法和系统
公开(公告)号：US06884298B2
公开(公告)日：2005-04-26
申请号：US10309273
申请日：2002-12-04
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Hidetami Yaegashi
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Hidetami Yaegashi
IPC分类号： G03F7/16 , G03F7/30 , G03F7/38 , H01L21/027 , C23C16/00 , C23C14/00 , C23F1/00
CPC分类号： G03F7/168
摘要： A coating and developing treatment system for performing coating and developing treatment. A coating treatment unit is configured to form a resist film on a substrate. A developing treatment unit is configured to develop the substrate. A heating/cooling unit includes a heat plate configured to continuously heat and a cooling plate configured to continuously cool in one casing the substrate on which the resist film has been formed by the coating treatment unit. A gas nozzle is configured to supply a treatment gas to the resist film formed on the substrate to form a protective film on a surface of the resist film. The gas nozzle is disposed on a cooling plate side in the heating/cooling unit. The gas nozzle is configured to move to a position above the substrate on the cooling plate during cooling at the cooling plate, to supply the treatment gas.
摘要翻译：一种用于进行涂层和显影处理的涂层和显影处理系统。涂布处理单元构造成在基板上形成抗蚀剂膜。显影处理单元构造成显影基板。加热/冷却单元包括被配置为连续加热的加热板和构造成在一个壳体中连续地冷却由涂覆处理单元形成有抗蚀剂膜的基板的冷却板。气体喷嘴被构造成将处理气体供给到形成在基板上的抗蚀剂膜，以在抗蚀剂膜的表面上形成保护膜。气体喷嘴设置在加热/冷却单元中的冷却板侧。气体喷嘴构造成在冷却板冷却期间移动到冷却板上的基板上方的位置，以供应处理气体。

6. 发明授权

US06518199B2 Method and system for coating and developing 失效
标题翻译：涂层和开发方法和系统
公开(公告)号：US06518199B2
公开(公告)日：2003-02-11
申请号：US09851134
申请日：2001-05-09
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Hidetami Yaegashi
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Hidetami Yaegashi
IPC分类号： H01L2131
CPC分类号： G03F7/168
摘要： The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate. According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming: the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film.
摘要翻译：本发明涉及对基材进行涂布和显影处理的方法，其特征在于包括以下步骤：向所述基材供给涂布溶液以在所述基材上形成涂膜; 对其上形成有涂膜的基板进行热处理; 热处理后冷却基板; 对形成在基板上的涂膜进行曝光处理; 并且在曝光处理之后显影衬底，并且还包括在形成涂膜的步骤之后并且在进行曝光处理的步骤之前，在涂膜的表面上提供处理气体以形成处理膜的步骤基质。根据本发明，在形成：涂膜的步骤和暴露基板的步骤之前，供给处理气体以在涂膜的表面上形成处理膜，从而可以保护基板免受杂质作为该处理膜在大气中的氧气和水蒸汽。

7. 发明申请

US20120312472A1 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件制造设备
公开(公告)号：US20120312472A1
公开(公告)日：2012-12-13
申请号：US13591281
申请日：2012-08-22
申请人： Hidetami Yaegashi , Satoru Shimura
发明人： Hidetami Yaegashi , Satoru Shimura
IPC分类号： H01L21/308
CPC分类号： H01L21/0337 , H01L27/105 , H01L27/1052
摘要： A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a boundary layer forming unit for forming a boundary layer at sidewall portions and top portions of the first pattern; a second mask material layer forming unit for forming a second mask material layer so as to cover a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; a boundary layer etching unit for forming a second pattern by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths.
摘要翻译：半导体器件制造装置包括：第一图案形成单元，用于通过图案化第一掩模材料层来形成第一图案; 边界层形成单元，用于在第一图案的侧壁部分和顶部处形成边界层; 第二掩模材料层形成单元，用于形成第二掩模材料层以覆盖边界层的表面; 第二掩模材料去除单元，用于去除所述第二掩模材料层的一部分以暴露所述边界层的顶部; 边界层蚀刻单元，用于通过蚀刻和去除边界层并在第一图案的侧壁部分和第二掩模材料层之间形成空隙来形成第二图案; 以及修整单元，用于将第一图案的宽度和第二图案的宽度减小到预定宽度。

8. 发明申请

US20110220609A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 审中-公开
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20110220609A1
公开(公告)日：2011-09-15
申请号：US13044741
申请日：2011-03-10
申请人： Hidetami Yaegashi , Masanobu Honda , Akitaka Shimizu
发明人： Hidetami Yaegashi , Masanobu Honda , Akitaka Shimizu
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01L21/31116 , H01L21/31122 , H01L21/32137 , H01L21/32139 , H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support 105, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support 105 and an electrode 120 provided so as to face the support 105.
摘要翻译：提供了能够独立地控制晶片表面的线宽和线的分布的等离子体蚀刻方法和等离子体蚀刻装置。用于通过将含有带电粒子和中性粒子的等离子体等离子体等离子体蚀刻到基板W上的等离子体蚀刻方法包括通过调整基板W的表面中的基板W与中性粒子之间的反应量的分布，由支撑体105支撑的基板W的表面的温度分布，通过调整由支撑体105支撑的基板W与电极之间的间隙来控制基板W的表面的带电粒子的照射量的分布 120设置成面对支撑件105。

9. 发明申请

US20110027727A1 Substrate developing method, substrate processing method and developing solution supply nozzle 有权
标题翻译：基板显影方法，基板加工方法和显影液供应喷嘴
公开(公告)号：US20110027727A1
公开(公告)日：2011-02-03
申请号：US12923703
申请日：2010-10-05
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： G03C5/00
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。

10. 发明申请

US20080145799A1 Substrate developing method, substrate processing method and developing solution supply nozzle 有权
标题翻译：基板显影方法，基板加工方法和显影液供应喷嘴
公开(公告)号：US20080145799A1
公开(公告)日：2008-06-19
申请号：US12068897
申请日：2008-02-13
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： G03F7/30
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。

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