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    • 7. 发明授权
    • Power-switching semiconductor device
    • 电源开关半导体器件
    • US06657239B1
    • 2003-12-02
    • US09784451
    • 2001-02-27
    • Kazuhiro MorishitaKatsumi Satoh
    • Kazuhiro MorishitaKatsumi Satoh
    • H01L2945
    • H01L29/41716H01L29/42308
    • In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric circle and a control electrode surrounding the segments are formed on a front major surface of a semiconductor substrate, and a second electrode is formed on a rear major surface thereof, and a turn-on operation is performed between the first main electrode and the second main electrode with a control signal inputted from the control electrode, specifying a relationship between a width of a segment and a distance between adjacent segments, and others.
    • 为了以低成本降低功率开关半导体器件的导通时间,分割成形成多同心圆的段行的多个段的第一主电极和围绕该段的控制电极形成在 半导体衬底的前主表面和第二电极形成在其后主表面上,并且利用从控制电极输入的控制信号在第一主电极和第二主电极之间进行导通操作,指定 片段的宽度与相邻片段之间的距离之间的关系等。