专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06225953B1 Method of manufacturing an antenna device for portable telephone 失效
标题翻译：制造便携式电话天线装置的方法
公开(公告)号：US06225953B1
公开(公告)日：2001-05-01
申请号：US09380443
申请日：1999-09-02
申请人： Yoshikazu Kamei , Masayuki Nakamura , Masato Sakata
发明人： Yoshikazu Kamei , Masayuki Nakamura , Masato Sakata
IPC分类号： H01Q124
CPC分类号： H01Q11/08 , B29C45/14065 , B29C45/1671 , B29L2031/3456 , H01Q1/244 , H01Q1/362
摘要： An antenna device (A3) for a portable telephone includes a whip antenna (1) having a larger-diameter portion (52) formed near its upper end by means of forming. The guide ring (7) consisting essentially of a synthetic resin fits on the whip antenna (1), such that the guide ring (7) abuts against the larger-diameter portion (52) to rest at a position below the larger-diameter portion. The whip antenna (1) and the guide ring (7) are coated with a coating layer (19) consisting essentially of a synthetic resin. The coating layer (19) has a main portion (54) coating the whip antenna (1) below the guide ring (7), and a joint portion (56) coating the guide ring (7) and the larger-diameter portion (52). A helical antenna (25) is arranged such that it is electrically connected to a metal terminal (62) and is mechanically connected to the whip antenna (1) through the joint portion (56) and the metal terminal (62). The helical antenna (25) is coated with a block (31) consisting essentially of a synthetic resin.
摘要翻译：用于便携式电话的天线装置（A3）包括具有通过成形在其上端附近形成的较大直径部分（52）的鞭状天线（1）。基本上由合成树脂组成的导向环（7）装配在鞭状天线（1）上，使得导向环（7）抵靠大直径部分（52）抵靠在较大直径部分。鞭状天线（1）和引导环（7）涂覆有主要由合成树脂组成的涂层（19）。涂层（19）具有在引导环（7）下方涂覆鞭状天线（1）的主要部分（54）和涂覆引导环（7）和大直径部分（52）的接合部分）。螺旋天线（25）被布置成使得其电连接到金属端子（62），并且通过接合部分（56）和金属端子（62）机械连接到鞭状天线（1）。螺旋天线（25）涂覆有基本上由合成树脂组成的块（31）。

2. 发明授权

US09153807B2 Laminated battery and manufacturing method thereof 有权
标题翻译：层叠电池及其制造方法
公开(公告)号：US09153807B2
公开(公告)日：2015-10-06
申请号：US13266226
申请日：2010-05-14
申请人： Ryuichi Amagai , Masayuki Nakamura
发明人： Ryuichi Amagai , Masayuki Nakamura
IPC分类号： H01M2/10 , H01M2/20 , H01M2/30 , H01M2/34 , H01M10/052
CPC分类号： H01M2/1077 , H01M2/206 , H01M2/305 , H01M2/34 , H01M10/052 , Y10T29/49108
摘要： A laminated battery formed by laminating a plurality of flat cells each having an electrode tab includes: an insulating member disposed to prevent a short-circuit in the electrode tab; and a terminal connected to the electrode tab, wherein a tip end side of the terminal is supported by a support member provided on the insulating member.
摘要翻译：通过层叠多个具有电极接头的扁平电池而形成的层叠电池包括：绝缘部件，设置为防止电极接头中的短路; 以及连接到所述电极接头的端子，其中，所述端子的前端侧由设置在所述绝缘构件上的支撑构件支撑。

3. 发明授权

US08772283B2 Imidazo-oxazine compound or salt thereof 有权
标题翻译：咪唑并恶嗪化合物或其盐
公开(公告)号：US08772283B2
公开(公告)日：2014-07-08
申请号：US14004446
申请日：2012-04-05
申请人： Masayuki Nakamura , Kenji Niiyama , Kaori Kamijo , Mitsuru Ohkubo , Toshiyasu Shimomura
发明人： Masayuki Nakamura , Kenji Niiyama , Kaori Kamijo , Mitsuru Ohkubo , Toshiyasu Shimomura
IPC分类号： C07D498/04 , C07D498/14 , A61K31/5365
CPC分类号： C07D498/04 , A61K31/5365 , C07D498/14
摘要： The present invention provides an imidazooxazine compound represented by Formula (I) or a salt thereof, wherein A, B, C, and D are as defined in the specification.
摘要翻译：本发明提供由式（I）表示的咪唑并恶嗪化合物或其盐，其中A，B，C和D如说明书中所定义。

4. 发明授权

US08422263B2 Load reduced memory module and memory system including the same 有权
标题翻译：负载减少的内存模块和包含相同的内存系统
公开(公告)号：US08422263B2
公开(公告)日：2013-04-16
申请号：US12801326
申请日：2010-06-03
申请人： Shunichi Saito , Toshio Sugano , Atsushi Hiraishi , Fumiyuki Osanai , Masayuki Nakamura , Hiroki Fujisawa
发明人： Shunichi Saito , Toshio Sugano , Atsushi Hiraishi , Fumiyuki Osanai , Masayuki Nakamura , Hiroki Fujisawa
IPC分类号： G11C5/06
CPC分类号： G11C7/00 , G11C5/02 , G11C5/04 , G11C5/063 , G11C7/10 , G11C7/1051 , G11C7/106 , G11C7/1078 , G11C7/1087 , G11C7/109 , H01L2224/48091 , H01L2224/48227 , H01L2924/15311 , H01L2924/00014
摘要： A memory module includes a plurality of memory chips, a plurality of data register buffers, and a command/address/control register buffer mounted on a module PCB. The data register buffers perform data transfers with the memory chips. The command/address/control register buffer performs buffering of a command/address/control signal and generates a control signal. The buffered command/address/control signal is supplied to the memory chips, and the control signal is supplied to the data register buffers. According to the present invention, because line lengths between the data register buffers and the memory chips are shortened, it is possible to realize a considerably high data transfer rate.
摘要翻译：存储器模块包括多个存储器芯片，多个数据寄存器缓冲器以及安装在模块PCB上的命令/地址/控制寄存器缓冲器。数据寄存器缓冲器与存储器芯片执行数据传输。命令/地址/控制寄存器缓冲器执行命令/地址/控制信号的缓冲并产生控制信号。缓冲的命令/地址/控制信号被提供给存储器芯片，并且控制信号被提供给数据寄存器缓冲器。根据本发明，由于数据寄存器缓冲器和存储器芯片之间的线路长度被缩短，可以实现相当高的数据传输速率。

5. 再颁专利

USRE42659E1 Large-capacity semiconductor memory with improved layout for sub-amplifiers to increase speed 有权
标题翻译：大容量半导体存储器，具有改进的子放大器布局，以提高速度
公开(公告)号：USRE42659E1
公开(公告)日：2011-08-30
申请号：US11759316
申请日：2007-06-07
申请人： Tsugio Takahashi , Goro Kitsukawa , Takesada Akiba , Yasushi Kawase , Masayuki Nakamura
发明人： Tsugio Takahashi , Goro Kitsukawa , Takesada Akiba , Yasushi Kawase , Masayuki Nakamura
IPC分类号： G11C8/00
CPC分类号： H01L27/10805 , G11C7/10 , G11C11/408 , G11C11/4096 , G11C11/4097 , H01L27/105
摘要： A semiconductor memory such as a dynamic RAM having memory mats each divided into a plurality of units or sub-memory mats. Each sub-memory mat comprises: a memory array having sub-word lines and sub-bit lines intersecting orthogonally and dynamic memory cells located in lattice fashion at the intersection points between the intersecting sub-word and sub-bit lines; a sub-word line driver including unit sub-word line driving circuits corresponding to the sub-word lines; a sense amplifier including unit amplifier circuits and column selection switches corresponding to the sub-bit lines; and sub-common I/O lines to which designated sub-bit lines are connected selectively via the column selection switches. The sub-memory mats are arranged in lattice fashion. Above the sub-memory mats is a layer of: main word lines and column selection signal lines intersecting orthogonally, the main word lines having a pitch that is an integer multiple of the pitch of the sub-word lines, the column selection signal lines having a pitch that is an integer multiple of the pitch of the sub-bit lines; and main common I/O lines to which designated sub-common I/O lines are connected selectively.
摘要翻译：具有各自被划分为多个单元或子存储器垫的存储器垫的动态RAM等半导体存储器。每个子存储器垫包括：存储器阵列，其具有在相交的子字和子位线之间的交叉点处以网格方式位于正交和动态存储器单元的子字线和子位线; 子字线驱动器，包括对应于子字线的单元子字线驱动电路; 感测放大器，包括对应于子位线的单位放大器电路和列选择开关; 以及经由列选择开关选择性地连接指定子位线的子公共I / O线。子存储垫以格子排列。在子存储器衬垫之上是与主要字线和列选择信号线正交相交的层，主字线具有作为子字线的间距的整数倍的间距，列选择信号线具有间距，是子位线的间距的整数倍; 以及指定的子公共I / O线选择性地连接的主要公共I / O。

6. 发明授权

US07839159B2 ZQ calibration circuit and a semiconductor device including a ZQ calibration circuit 有权
标题翻译： ZQ校准电路和包括ZQ校准电路的半导体器件
公开(公告)号：US07839159B2
公开(公告)日：2010-11-23
申请号：US11585108
申请日：2006-10-24
申请人： Masayuki Nakamura , Hideyuki Yoko
发明人： Masayuki Nakamura , Hideyuki Yoko
IPC分类号： G01R31/26
CPC分类号： H04L25/0278 , G11C7/1051 , G11C7/1057 , G11C2207/2254
摘要： A ZQ calibration command is internally generated from an external command different from a ZQ calibration command so as to automatically perform an additional ZQ calibration operation. A command interval between an inputted command and a next command is effectively employed to obtain a ZQ calibration period. The external command different from the ZQ calibration command is preferably a self-refreshed command. The addition of the ZQ calibration operation shortens intervals between ZQ calibration operations. Thus, it is possible to obtain a ZQ calibration circuit capable of performing a ZQ calibration operation more accurately.
摘要翻译： ZQ校准命令在内部从与ZQ校准命令不同的外部命令生成，以便自动执行附加的ZQ校准操作。有效地采用输入命令和下一命令之间的命令间隔来获得ZQ校准周期。与ZQ校准命令不同的外部命令优选为自刷新命令。添加ZQ校准操作可缩短ZQ校准操作之间的间隔。因此，可以更精确地获得能够执行ZQ校准操作的ZQ校准电路。

7. 发明申请

US20100123728A1 MEMORY ACCESS CONTROL CIRCUIT AND IMAGE PROCESSING SYSTEM 有权
标题翻译：存储器访问控制电路和图像处理系统
公开(公告)号：US20100123728A1
公开(公告)日：2010-05-20
申请号：US12608322
申请日：2009-10-29
申请人： Akihiro KAWAHARA , Makoto Adachi , Kouji Nishikawa , Masayuki Nakamura , Motonobu Mamiya , Kae Yamashita
发明人： Akihiro KAWAHARA , Makoto Adachi , Kouji Nishikawa , Masayuki Nakamura , Motonobu Mamiya , Kae Yamashita
IPC分类号： G06F13/00 , G06F12/16
CPC分类号： G09G5/397 , G09G5/363 , G09G5/393
摘要： A memory access control circuit includes a first internal register, an address transmitting unit that sets a state of the first internal register to a first state to transmit a first address and sets a state of the first internal register to a second state to transmit a second address, a second internal register, a data receiving unit that sets a state of the second internal register to a third state to receive first data corresponding to the first address, performs data processing on the first data without delay, sets a state of the second internal register to a fourth state to receive second data corresponding to the second address, and performs data processing on the second data after delaying the second data by a given delay time, a first backup unit and a second backup unit.
摘要翻译：存储器访问控制电路包括第一内部寄存器，地址发送单元，其将第一内部寄存器的状态设置为第一状态以发送第一地址，并将第一内部寄存器的状态设置为第二状态，以发送第二内部寄存器地址，第二内部寄存器，数据接收单元，其将第二内部寄存器的状态设置为第三状态，以接收对应于第一地址的第一数据，对延迟的第一数据执行数据处理，设置第二内部寄存器的状态内部寄存器到第四状态以接收对应于第二地址的第二数据，并且在延迟给定延迟时间的第二数据之后对第二数据执行数据处理，第一备份单元和第二备份单元。

8. 发明申请

US20090270436A1 SPIROCHROMANON DERIVATIVES 有权
标题翻译：螺吡喃衍生物
公开(公告)号：US20090270436A1
公开(公告)日：2009-10-29
申请号：US12518466
申请日：2008-01-08
申请人： Tomoharu Iino , Hideki Jona , Hideki Kurihara , Masayuki Nakamura , Kenji Niiyama , Jun Shibata , Tadashi Shimamura , Hitomi Watanabe , Takeru Yamakawa , Lihu Yang
发明人： Tomoharu Iino , Hideki Jona , Hideki Kurihara , Masayuki Nakamura , Kenji Niiyama , Jun Shibata , Tadashi Shimamura , Hitomi Watanabe , Takeru Yamakawa , Lihu Yang
IPC分类号： A61K31/438 , C07D401/14 , A61P3/00 , A61P35/00 , A61P31/00
CPC分类号： C07D491/107 , C07D491/20 , C07D519/00
摘要： The invention relates to a compound of a general formula (I): wherein Ar1 represents a group formed from an aromatic ring selected from a group consisting of benzene, pyrazole, isoxazole, pyridine, indole, 1H-indazole, 1H-furo[2,3-c]pyrazole, 1H-thieno[2,3-c]pyrazole, benzimidazole, 1,2-benzisoxazole, imidazo[1,2-a]pyridine, imidazo[1,5-a]pyridine and 1H-pyrazolo[3,4-b]pyridine, having Ar2, and optionally having one or two or more substituents selected from R3: R1 and R2 each independently represent a hydrogen atom, a halogen atom, a cyano group, a C2-C6 alkenyl group, a C1-C6 alkoxy group, a C2-C7 alkanoyl group, a C2-C7 alkoxycarbonyl group, an aralkyloxycarbonyl group, a carbamoyl-C1-C6 alkoxy group, a carboxy-C2-C6 alkenyl group, or a group of -Q1-N(Ra)-Q2-Rb; or a C1-C6 alkyl group optionally having a substituent; or an aryl or heterocyclic group optionally having a substituent; or a C1-C6 alkyl group or a C2-C6 alkenyl group having the aryl or heterocyclic group; T and U each independently represent a nitrogen atom or a machine group; and V represents an oxygen atom or a sulfur atom. The compound of the invention is useful as therapeutical agents for various ACC-related diseases.
摘要翻译：本发明涉及通式（I）的化合物：其中Ar 1表示由选自苯，吡唑，异恶唑，吡啶，吲哚，1H-吲唑，1H-呋喃并[ 3-c]吡唑，1H-噻吩并[2,3-c]吡唑，苯并咪唑，1,2-苯并异恶唑，咪唑并[1,2-a]吡啶，咪唑并[1,5-a]吡啶和1H-吡唑并[ 具有Ar 2且任选具有一个或两个以上选自R 3：R 1和R 2的取代基的3,4-b]吡啶各自独立地表示氢原子，卤素原子，氰基，C 2 -C 6烯基， C1-C6烷氧基，C2-C7烷酰基，C2-C7烷氧基羰基，芳烷氧基羰基，氨基甲酰基C1-C6烷氧基，羧基-C2-C6链烯基或-Q1-N （Ra）-Q2-Rb; 或任选具有取代基的C1-C6烷基; 或任选具有取代基的芳基或杂环基; 或具有芳基或杂环基的C 1 -C 6烷基或C 2 -C 6烯基; T和U各自独立地表示氮原子或机组; V表示氧原子或硫原子。本发明的化合物可用作各种ACC相关疾病的治疗剂。

9. 发明授权

US07541862B2 Reference voltage generating circuit 有权
标题翻译：基准电压发生电路
公开(公告)号：US07541862B2
公开(公告)日：2009-06-02
申请号：US11603121
申请日：2006-11-22
申请人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Masayuki Nakamura , Hitoshi Tanaka
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F3/30
摘要： A reference voltage generating circuit is described. The circuit includes a current generating section that generates a first current having a positive temperature coefficient, a voltage generating section that generates a voltage having a negative temperature coefficient, a synthesis section that generates a voltage which is the sum of a voltage having a positive temperature coefficient and developed across both terminals of a resistor, where the voltage has a negative temperature coefficient, and a compensation current generating section that generates a second current having a positive temperature coefficient. The current corresponding to the sum of said first and second currents is caused to flow through the resistor. The synthesis section generates a voltage which is a sum of a terminal voltage of the resistor by the sum current of the first and second currents and the voltage having a negative temperature coefficient.
摘要翻译：描述参考电压产生电路。该电路包括产生具有正温度系数的第一电流的电流产生部分，产生具有负温度系数的电压的电压产生部分，产生与具有正温度的电压之和的电压的合成部分系数，并且在电压具有负温度系数的电阻器的两端开发，以及产生具有正温度系数的第二电流的补偿电流产生部。使与第一和第二电流之和相对应的电流流过电阻器。合成部分产生电阻的端点电压与第一和第二电流的和电流与负温度系数的电压之和的电压。

10. 发明授权

US07488422B2 Method and apparatus for separating a target molecule from a liquid mixture 有权
标题翻译：从液体混合物中分离靶分子的方法和装置
公开(公告)号：US07488422B2
公开(公告)日：2009-02-10
申请号：US11241482
申请日：2005-09-30
申请人： Andrew W. Rabins , Kelly J. Gibbens , Masayuki Nakamura , Kannan Seshadri , Robert T. Fitzsimons, Jr. , Larry J. Carson , Stephen M. Larsen
发明人： Andrew W. Rabins , Kelly J. Gibbens , Masayuki Nakamura , Kannan Seshadri , Robert T. Fitzsimons, Jr. , Larry J. Carson , Stephen M. Larsen
IPC分类号： B01D15/08
CPC分类号： B01J20/28033 , B01D15/1828
摘要： A simulated moving bed apparatus and methods are described for continuously separating a target molecule from a liquid mixture, using a simulated moving bed system. The simulated moving bed system includes a plurality of filter cartridge modules in serial fluid communication. Each filter cartridge module includes a volume of stationary phase particulates adjacent a porous substrate layer. Each filter cartridge module also includes recirculation piping in fluid connection with a filter cartridge outlet and a filter cartridge inlet.
摘要翻译：描述了一种模拟移动床装置和方法，用于使用模拟移动床系统从目标分子与液体混合物连续分离。模拟移动床系统包括串联流体连通的多个滤芯模块。每个过滤器滤芯模块包括邻近多孔基底层的体积的固定相颗粒。每个过滤筒模块还包括与过滤器滤芯出口和过滤器滤芯入口流体连接的再循环管道。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式