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    • 1. 发明授权
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US06174822B1
    • 2001-01-16
    • US09175250
    • 1998-10-20
    • Yoshihisa NaganoToshie KutsunaiYuji JudaiYasuhiro UemotoEiji Fujii
    • Yoshihisa NaganoToshie KutsunaiYuji JudaiYasuhiro UemotoEiji Fujii
    • H01L2131
    • H01L27/1085H01L21/76895H01L23/5223H01L28/55H01L2924/0002H01L2924/00
    • A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
    • 半导体器件包括:设置在其上具有集成电路的支撑衬底上并包括下电极,电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜,并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。