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    • 9. 发明申请
    • Au-Ag Core-Shell Nanorod Particles and Method for Producing Same
    • Au-Ag核壳纳米棒颗粒及其制备方法
    • US20120244225A1
    • 2012-09-27
    • US13514838
    • 2010-12-10
    • Hidenori OtsukaToshihiko KurosawaYoshihiro Saito
    • Hidenori OtsukaToshihiko KurosawaYoshihiro Saito
    • A61K33/38A61K9/14A61P35/00B82Y40/00B82Y5/00
    • B22F1/0025A61K49/0065B22F1/025B82Y30/00
    • Disclosed are: Au—Ag core-shell nanorod particles wherein a cationic surfactant such as CTAB is substituted by an other compound; and a method for producing the Au—Ag core-shell nanorod particles. Specifically disclosed are Au—Ag core-shell nanorod particles which are characterized in that each of the nanorod particles comprises a gold nanorod particle that serves as the core, a shell layer that covers the surface of the gold nanorod particle and is formed from silver, and a copolymer that adsorbs on the surface of the shell layer. The Au—Ag core-shell nanorod particles are also characterized in that the copolymer is a block copolymer or graft copolymer that is obtained by polymerizing at least a polymerizable monomer (A) that has a group represented by general formula (I). In the formula, Ra represents an alkylene group having 2-7 carbon atoms.
    • 公开了其中阳离子表面活性剂如CTAB被其他化合物取代的Au-Ag核 - 壳纳米棒颗粒; 以及Au-Ag核 - 壳纳米棒粒子的制造方法。 具体公开了Au-Ag核 - 壳纳米棒颗粒,其特征在于,每个纳米棒颗粒包含用作芯的金纳米棒颗粒,覆盖金纳米棒颗粒表面并由银形成的壳层, 以及吸附在壳层的表面上的共聚物。 Au-Ag核 - 壳纳米棒颗粒的特征还在于该共聚物是通过使至少具有由通式(I)表示的基团的可聚合单体(A)聚合而获得的嵌段共聚物或接枝共聚物。 式中,Ra表示碳原子数2〜7的亚烷基。
    • 10. 发明授权
    • Ohmic contact on a p-type principal surface tilting with respect to the c-plane
    • 在相对于c面倾斜的p型主表面上的欧姆接触
    • US08227898B2
    • 2012-07-24
    • US12836222
    • 2010-07-14
    • Shinji TokuyamaMasahiro AdachiTakashi KyonoYoshihiro Saito
    • Shinji TokuyamaMasahiro AdachiTakashi KyonoYoshihiro Saito
    • H01L29/20H01L29/04
    • H01L33/40H01L33/16H01L33/32
    • A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.
    • 半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴(轴<0001>)倾斜的平面延伸。 金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离,使得金属层用作非合金电极 。 由于六方晶III族氮化物含有镓作为III族元素,所以与六方晶III族氮化物的c面相比,包含六方晶III族氮化物的主表面13a更易于氧化。 界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。