专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06580095B2 Circuit-containing photodetector, method of manufacturing the same, and optical device using circuit-containing photodetector 失效
公开(公告)号：US06580095B2
公开(公告)日：2003-06-17
申请号：US09874997
申请日：2001-06-07
申请人： Yoshihiko Tani , Shigeki Hayashida , Tatsuya Morioka , Seizo Kakimoto , Toshihiko Fukushima
发明人： Yoshihiko Tani , Shigeki Hayashida , Tatsuya Morioka , Seizo Kakimoto , Toshihiko Fukushima
IPC分类号： H01L2715
CPC分类号： H01L27/14698 , H01L27/14609 , H01L27/14689
摘要： A circuit-containing photodetector is provided which can have a high sensitivity and response to light of a short wavelength and can be manufactured in a good yield. The circuit-containing photodetector includes a semiconductor substrate, a semiconductor layer formed thereon, and a conductive impurity region formed in the semiconductor layer for transmitting a signal. In the semiconductor layer, a trench is formed to have a depth to reach the substrate. An impurity region of a photodetector element is formed at the surface of the semiconductor substrate exposed at the bottom of the trench. A signal processing circuit for processing an electric signal from the photodetector element is formed on the semiconductor layer. The conductive impurity region for transmitting the electric signal from the photodetector element is formed to extend from the bottom of the trench to the upper surface of the semiconductor layer.

2. 发明授权

US5903029A Insulated-gate field-effect transistor and method for producing the same 失效
标题翻译：绝缘栅场效应晶体管及其制造方法
公开(公告)号：US5903029A
公开(公告)日：1999-05-11
申请号：US902673
申请日：1997-07-30
申请人： Shigeki Hayashida , Seizo Kakimoto
发明人： Shigeki Hayashida , Seizo Kakimoto
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/6659 , H01L29/0847 , H01L29/7833 , H01L21/2652
摘要： An insulated-gate field-effect transistor formed in a substrate of a first conductive type or in a well of the first conductive type formed in the substrate is provided. The transistor includes a channel region containing an impurity of the first conductive type; and a source-drain region containing an impurity of a second conductive type. The source-drain region further contains an impurity of the first conductive type; and a concentration of the impurity of the first conductive type contained in the source-drain region is greater than a concentration of the impurity of the first conductive type contained in the channel region but is less than a concentration of the impurity of the second conductive type contained in the source-drain region.
摘要翻译：提供了形成在第一导电类型的衬底中或形成在衬底中的第一导电类型的阱中的绝缘栅场效应晶体管。晶体管包括含有第一导电类型杂质的沟道区; 以及包含第二导电类型的杂质的源极 - 漏极区域。源极 - 漏极区还包含第一导电类型的杂质; 并且源极 - 漏极区域中包含的第一导电类型的杂质的浓度大于沟道区域中包含的第一导电类型的杂质的浓度，但是小于第二导电类型的杂质的浓度包含在源极 - 漏极区域中。

3. 发明授权

US07462857B2 Memory device including resistance-changing function body 失效
标题翻译：记忆体包括电阻变化功能体
公开(公告)号：US07462857B2
公开(公告)日：2008-12-09
申请号：US10528052
申请日：2003-09-18
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/02
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

4. 发明授权

US06291861B1 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06291861B1
公开(公告)日：2001-09-18
申请号：US09345414
申请日：1999-06-30
申请人： Hiroshi Iwata , Seizo Kakimoto , Masayuki Nakano , Kouichiro Adachi
发明人： Hiroshi Iwata , Seizo Kakimoto , Masayuki Nakano , Kouichiro Adachi
IPC分类号： H01L21336
CPC分类号： H01L29/66772 , H01L21/2257 , H01L27/088 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/4941 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66575 , H01L29/78654
摘要： A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide film at a first face, a portion of the source/drain regions being located above the first face. The electrode is in contact with the source/drain region at a second face, the second face constituting an angle with respect to the first face.
摘要翻译：具有器件分离区域和有源区域的半导体器件包括栅极氧化膜，源极/漏极区域和电耦合到源极/漏极区域的电极。有源区在第一面处与栅极氧化膜接触，源/漏区的一部分位于第一面的上方。电极在第二面处与源极/漏极区域接触，第二面部相对于第一面构成一个角度。

5. 发明授权

US5334869A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5334869A
公开(公告)日：1994-08-02
申请号：US112480
申请日：1993-08-27
申请人： Katsuji Iguchi , Seizo Kakimoto , Naoyuki Shinmura
发明人： Katsuji Iguchi , Seizo Kakimoto , Naoyuki Shinmura
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/68
CPC分类号： H01L27/10844 , H01L27/10817 , Y10S438/947
摘要： A semiconductor memory device includes a plurality of memory cells each including a transistor formed on a surface of a semiconductor substrate and having one terminal, and a capacitor formed on the semiconductor substrate and having first and second electrodes, with the first electrode being connected with one terminal of the transistor. The first electrode of the capacitor includes a principal portion of either a generally rectangular cubic configuration or a generally cup-shaped configuration, a peripheral portion spaced from and surrounding a peripheral side wall of the principal portion and a bottom portion connecting an end of the principal portion with an end of the peripheral portion. On the other hand, the second electrode of the capacitor includes respective portions confronting the principal portion, the peripheral portion and the bottom portion of the first electrode.
摘要翻译：半导体存储器件包括多个存储单元，每个存储单元包括形成在半导体衬底的表面上并具有一个端子的晶体管，以及形成在半导体衬底上并具有第一和第二电极的电容器，第一电极与一个第一电极连接晶体管的端子。电容器的第一电极包括大致矩形立方体形状或大致杯形构造的主要部分，与主要部分的周边侧壁间隔开并围绕主体部分的周边侧壁的周边部分，以及连接主体端部的底部部分该部分具有周边部分的端部。另一方面，电容器的第二电极包括与第一电极的主要部分，周边部分和底部相对的各个部分。

6. 发明授权

US5166087A Method of fabricating semiconductor element having lightly doped drain (LDD) without using sidewalls 失效
标题翻译：在不使用边缘的情况下制造具有轻型排水（LDD）的半导体元件的方法
公开(公告)号：US5166087A
公开(公告)日：1992-11-24
申请号：US820076
申请日：1992-01-13
申请人： Seizo Kakimoto , Katsuji Iguchi , Sung T. Ahn
发明人： Seizo Kakimoto , Katsuji Iguchi , Sung T. Ahn
IPC分类号： H01L21/265 , H01L21/336
CPC分类号： H01L29/6659 , H01L21/26586
摘要： A method of fabricating an insulating gate type field-effect transistor in which a region having a low carrier density for mitigating electric field is provided so as to abut on a source/drain region having a high carrier density, the method comprising the steps of: forming a gate insulating film and a gate electrode on a semiconductor substrate; depositing an insulating thin film on the gate electrode and the gate insulating film to a vertical thickness; and performing from above the insulating thin film, ion implantation at an implantation energy inducing a projected range of ions approximately equal to the vertical thickness of the insulating thin film so as to form the source/drain region; wherein a horizontal thickness of the insulating thin film on opposite sides of the gate electrode is larger than a sum of a lateral diffusion distance of the source/drain region at the time of the ion implantation and a lateral diffusion distance of the source/drain region after the ion implantation.

7. 发明授权

US07187043B2 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body 失效
标题翻译：记忆功能体及其形成粒子的方法，以及存储器件，半导体器件和具有记忆功能体的电子设备
公开(公告)号：US07187043B2
公开(公告)日：2007-03-06
申请号：US10796963
申请日：2004-03-11
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L21/8238
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332
摘要： A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.
摘要翻译：记忆功能体具有介于第一导体（例如，导电基板）和第二导体（例如电极）之间并由第一材料（例如氧化硅或氮化硅）组成的介质。介质含有颗粒。每个颗粒被第二材料（例如氧化银）覆盖并由第三种材料（例如银）形成。第二材料用作阻止电荷通过的屏障，第三材料具有保持电荷的功能。第三种材料通过例如负离子注入法引入介质中。

8. 发明申请

US20060154432A1 Variable resistance functional body and its manufacturing method 失效
标题翻译：可变电阻功能体及其制造方法
公开(公告)号：US20060154432A1
公开(公告)日：2006-07-13
申请号：US10528052
申请日：2003-09-18
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/768
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90
摘要： A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
摘要翻译：电阻变化功能体包括由第一物质制成的物体，介于第一电极和第二电极之间，以及多个由第二物质制成的颗粒并且布置在物体内，使得第一电极和第二电极之间的电阻在第一电极和第二电极之间施加指定电压之前和之后改变第二电极。第一物质对第二物质产生电阻。利用这种结构，通过在第一电极和第二电极之间施加规定的电压，可以根据由第二物质制成的粒子的状态来改变电阻。另外，由于结构简单，所以以低成本提供小尺寸的电阻变化功能体。

9. 发明授权

US07074676B2 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment 失效
标题翻译：存储膜，制造存储膜的方法，存储元件，半导体存储器件，半导体集成电路和便携式电子设备
公开(公告)号：US07074676B2
公开(公告)日：2006-07-11
申请号：US10468738
申请日：2002-02-13
申请人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
发明人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
IPC分类号： H01L21/8247 , H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L27/115 , H01L29/42332 , Y10S438/962
摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.
摘要翻译：以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极第三绝缘膜。

10. 发明授权

US07030456B2 Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment 失效
标题翻译：电阻变化功能体，存储元件，其制造方法，存储器件，半导体器件和电子设备
公开(公告)号：US07030456B2
公开(公告)日：2006-04-18
申请号：US10797137
申请日：2004-03-11
申请人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
发明人： Nobutoshi Arai , Hiroshi Iwata , Seizo Kakimoto
IPC分类号： H01L29/00
CPC分类号： G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/71 , H01L27/101 , H01L27/112 , H01L27/11213
摘要： A memory function body 113, which includes a plurality of silver particles 103 covered with silver oxide 104, is interposed between a first electrode 300 and a second electrode 411. A magnitude of a current through the memory function body 113 changes on applying a prescribed voltage between the first electrode 300 and the second electrode 411, and a storage state is discriminated according to the magnitude of the current. The silver particles 103, which capture electric charges, are covered with the silver oxide 104 that serves as a barrier against the passage of electric charges, and therefore, the memory function body 113 can stably retain electric charges at the normal temperature.
摘要翻译：记录功能体113包括被氧化银104覆盖的多个银颗粒103，介于第一电极300和第二电极411之间。通过存储功能体113的电流的大小在第一电极300和第二电极411之间施加规定的电压而变化，并且根据电流的大小区分存储状态。捕获电荷的银颗粒103被作为阻止电荷通过的屏障的氧化银104覆盖，因此，记忆功能体113能够在常温下稳定地保持电荷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式