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1. 发明授权

US08183898B2 Apparatus for supplying voltage free noise and method of operation the same 失效
标题翻译：用于提供无电压噪声的装置及其操作方法
公开(公告)号：US08183898B2
公开(公告)日：2012-05-22
申请号：US13180584
申请日：2011-07-12
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： H03L7/00
CPC分类号： H03K17/145 , H03K19/00384 , Y10T307/696
摘要： A voltage supply apparatus includes a power noise sensing unit, a voltage selecting unit, a first power voltage supply unit and a second power voltage supply unit. The power noise sensing unit senses noise from first and second powers and outputs a power noise sensing signal. The voltage selecting unit outputs first and second driving signals in response to a voltage-supply-enable-signal and the power noise sensing signal. The first power voltage supply unit applies a voltage of the first power in response to the first and second driving signals. The second power voltage supply unit applies a voltage of the second power in response to the first and second driving signals.
摘要翻译：电压供给装置包括电源噪声检测单元，电压选择单元，第一电源电压单元和第二电源电压单元。功率噪声感测单元感测来自第一和第二功率的噪声，并输出功率噪声感测信号。电压选择单元响应于电压供应使能信号和功率噪声感测信号输出第一和第二驱动信号。第一电源电压单元响应于第一和第二驱动信号施加第一功率的电压。第二电源电压单元响应于第一和第二驱动信号施加第二功率的电压。

2. 发明授权

US07502268B2 Voltage control apparatus and method of controlling voltage using the same 有权
标题翻译：电压控制装置及使用该电压控制装置的电压控制方法
公开(公告)号：US07502268B2
公开(公告)日：2009-03-10
申请号：US11822358
申请日：2007-07-05
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G11C29/00
CPC分类号： G11C29/12 , G11C11/401 , G11C11/4074 , G11C2029/1202
摘要： A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.
摘要翻译：电压控制装置及使用该电压控制装置的电压的控制方法。一种电压控制装置，包括：信号发生器，被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器，被配置为将第一电压或第二电压响应于老化控制信号和老化预充电信号到字线的第一电压。

3. 发明申请

US20080080289A1 Internal voltage generator of semiconductor memory device 有权
标题翻译：半导体存储器件的内部电压发生器
公开(公告)号：US20080080289A1
公开(公告)日：2008-04-03
申请号：US11822005
申请日：2007-06-29
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C5/14
CPC分类号： G11C5/14
摘要： An internal voltage generator of a semiconductor memory device controls generating an internal voltage according to an increase of the internal voltage during an active mode, to thereby decrease current consumption. The internal voltage generator of a semiconductor memory device includes a voltage sensor, a plurality of first control units, a plurality of second control units, and a plurality of voltage drivers. The voltage sensor detects an internal voltage. The plurality of first control units generate a plurality of internal control signals according to the voltage level of an output of the voltage sensor. The plurality of second control units generate a plurality of driver control signals in response to the plurality of internal control signals. The plurality of voltage drivers are turned on/off in response to the plurality of driver control signals.
摘要翻译：半导体存储器件的内部电压发生器控制在活动模式期间根据内部电压的增加而产生内部电压，从而降低电流消耗。半导体存储器件的内部电压发生器包括电压传感器，多个第一控制单元，多个第二控制单元和多个电压驱动器。电压传感器检测内部电压。多个第一控制单元根据电压传感器的输出的电压电平产生多个内部控制信号。多个第二控制单元响应于多个内部控制信号产生多个驱动器控制信号。响应于多个驱动器控制信号，多个电压驱动器被接通/断开。

4. 发明授权

US07916566B2 Voltage control apparatus and method of controlling voltage using the same 有权
标题翻译：电压控制装置及使用该电压控制装置的电压控制方法
公开(公告)号：US07916566B2
公开(公告)日：2011-03-29
申请号：US12364670
申请日：2009-02-03
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G11C7/00
CPC分类号： G11C29/12 , G11C11/401 , G11C11/4074 , G11C2029/1202
摘要： A voltage control apparatus and a method of controlling a voltage using the same. A voltage control apparatus includes a signal generator configured to output a burn-in control signal and a burn-in precharge signal in response to an all bank precharge command, and a voltage controller configured to supply either a first voltage or a second voltage lower than the first voltage to a word line in response to the burn-in control signal and the burn-in precharge signal.
摘要翻译：电压控制装置及使用该电压控制装置的电压的控制方法。一种电压控制装置，包括：信号发生器，被配置为响应于全部分组预充电命令输出老化控制信号和老化预充电信号;以及电压控制器，被配置为将第一电压或第二电压响应于老化控制信号和老化预充电信号到字线的第一电压。

5. 发明申请

US20080304335A1 Semiconductor memory device including apparatus for detecting threshold voltage 失效
标题翻译：半导体存储器件包括用于检测阈值电压的装置
公开(公告)号：US20080304335A1
公开(公告)日：2008-12-11
申请号：US12003675
申请日：2007-12-31
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C7/12
CPC分类号： G11C11/4074 , G11C5/145
摘要： A semiconductor device including a threshold voltage detector and a boosted voltage generating unit. The threshold voltage detector detects a threshold voltage level of cell transistors and outputs a detected threshold voltage level. The boosted voltage generating unit changes a target level of a boosted voltage in response to the detected threshold voltage level. The threshold voltage detector includes a detected current generating unit and a detected voltage generating unit. The detected current generating unit has a plurality of cell transistors in a cell array and generates a detected current whose amplitude varies corresponding to an average level of the threshold voltages of the cell transistors. The detected voltage generating unit generates the detected threshold voltage level whose level is determined corresponding to the amplitude of the detected current.
摘要翻译：一种包括阈值电压检测器和升压电压产生单元的半导体器件。阈值电压检测器检测单元晶体管的阈值电压电平，并输出检测到的阈值电压电平。升压电压发生单元响应于检测到的阈值电压电平而改变升压电压的目标电平。阈值电压检测器包括检测电流产生单元和检测电压产生单元。检测电流产生单元具有单元阵列中的多个单元晶体管，并产生其幅度根据单元晶体管的阈值电压的平均电平而变化的检测电流。检测电压产生单元产生检测到的阈值电压电平，其电平根据检测到的电流的幅度确定。

6. 发明申请

US20070069802A1 Internal voltage generator 有权
标题翻译：内部电压发生器
公开(公告)号：US20070069802A1
公开(公告)日：2007-03-29
申请号：US11478077
申请日：2006-06-30
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G05F1/10 , G11C5/14 , G05F3/02
CPC分类号： G11C5/147 , G05F1/465
摘要： An internal voltage generator supplies a stable internal voltage without increasing standby current. The internal voltage generator includes an internal voltage driver for supplying an internal voltage based on a control signal, a feedback circuit for supplying a feedback voltage having a voltage level proportional to the internal voltage, a control signal generating circuit for generating the control signal to control the internal voltage driver such that the feedback voltage is maintained at a desired reference voltage, an auxiliary driving circuit for additionally supplying the internal voltage in response to the control signal, and an auxiliary driving control circuit for activating the auxiliary driving circuit only when it is expected to dissipate a large amount of a current.
摘要翻译：内部电压发生器提供稳定的内部电压，而不增加待机电流。内部电压发生器包括用于基于控制信号提供内部电压的内部电压驱动器，用于提供具有与内部电压成比例的电压电平的反馈电压的反馈电路，用于产生控制信号以控制的控制信号发生电路所述内部电压驱动器使得所述反馈电压保持在期望的参考电压，辅助驱动电路，用于响应于所述控制信号另外提供所述内部电压;以及辅助驱动控制电路，用于仅在所述辅助驱动电路预计会消散大量的电流。

7. 发明授权

US07835198B2 Apparatus and method for detecting leakage current of semiconductor memory device, and internal voltage generating circuit using the same 失效
标题翻译：用于检测半导体存储器件的漏电流的装置和方法，以及使用其的内部电压产生电路
公开(公告)号：US07835198B2
公开(公告)日：2010-11-16
申请号：US11966779
申请日：2007-12-28
申请人： Jun-Gi Choi , Yoon-Jae Shin
发明人： Jun-Gi Choi , Yoon-Jae Shin
IPC分类号： G11C5/14
CPC分类号： G11C5/14 , G11C11/4074
摘要： A semiconductor memory device is capable of generating a back bias voltage based on a target level changed according to a leakage current of the semiconductor memory devices, thereby minimizing the amount of the leakage current. The semiconductor memory device includes a leakage current detector and a back bias voltage generator. The leakage current detector is configured to detect a leakage current of a cell array. The back bias voltage generator is configured to generate a back bias voltage having a target level changed according to the leakage current.
摘要翻译：半导体存储器件能够基于根据半导体存储器件的漏电流而改变的目标电平产生反偏压，从而使漏电流的量最小化。半导体存储器件包括泄漏电流检测器和背偏置电压发生器。泄漏电流检测器被配置为检测电池阵列的漏电流。背偏置电压发生器被配置为产生具有根据泄漏电流而改变的目标电平的反向偏置电压。

8. 发明授权

US07791945B2 Semiconductor memory device including apparatus for detecting threshold voltage 失效
标题翻译：半导体存储器件包括用于检测阈值电压的装置
公开(公告)号：US07791945B2
公开(公告)日：2010-09-07
申请号：US12003675
申请日：2007-12-31
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C11/34
CPC分类号： G11C11/4074 , G11C5/145
摘要： A semiconductor device including a threshold voltage detector and a boosted voltage generating unit. The threshold voltage detector detects a threshold voltage level of cell transistors and outputs a detected threshold voltage level. The boosted voltage generating unit changes a target level of a boosted voltage in response to the detected threshold voltage level. The threshold voltage detector includes a detected current generating unit and a detected voltage generating unit. The detected current generating unit has a plurality of cell transistors in a cell array and generates a detected current whose amplitude varies corresponding to an average level of the threshold voltages of the cell transistors. The detected voltage generating unit generates the detected threshold voltage level whose level is determined corresponding to the amplitude of the detected current.
摘要翻译：一种包括阈值电压检测器和升压电压产生单元的半导体器件。阈值电压检测器检测单元晶体管的阈值电压电平，并输出检测到的阈值电压电平。升压电压发生单元响应于检测到的阈值电压电平而改变升压电压的目标电平。阈值电压检测器包括检测电流产生单元和检测电压产生单元。检测电流产生单元具有单元阵列中的多个单元晶体管，并产生其幅度根据单元晶体管的阈值电压的平均电平而变化的检测电流。检测电压产生单元产生检测到的阈值电压电平，其电平根据检测到的电流的幅度确定。

9. 发明授权

US07599240B2 Internal voltage generator of semiconductor memory device 有权
标题翻译：半导体存储器件的内部电压发生器
公开(公告)号：US07599240B2
公开(公告)日：2009-10-06
申请号：US11822005
申请日：2007-06-29
申请人： Yoon-Jae Shin , Jun-Gi Choi
发明人： Yoon-Jae Shin , Jun-Gi Choi
IPC分类号： G11C5/14
CPC分类号： G11C5/14
摘要： An internal voltage generator of a semiconductor memory device controls generating an internal voltage according to an increase of the internal voltage during an active mode, to thereby decrease current consumption. The internal voltage generator of a semiconductor memory device includes a voltage sensor, a plurality of first control units, a plurality of second control units, and a plurality of voltage drivers. The voltage sensor detects an internal voltage. The plurality of first control units generate a plurality of internal control signals according to the voltage level of an output of the voltage sensor. The plurality of second control units generate a plurality of driver control signals in response to the plurality of internal control signals. The plurality of voltage drivers are turned on/off in response to the plurality of driver control signals.
摘要翻译：半导体存储器件的内部电压发生器控制在活动模式期间根据内部电压的增加而产生内部电压，从而降低电流消耗。半导体存储器件的内部电压发生器包括电压传感器，多个第一控制单元，多个第二控制单元和多个电压驱动器。电压传感器检测内部电压。多个第一控制单元根据电压传感器的输出的电压电平产生多个内部控制信号。多个第二控制单元响应于多个内部控制信号产生多个驱动器控制信号。响应于多个驱动器控制信号，多个电压驱动器被接通/断开。

10. 发明申请

US20080219061A1 APPARATUS AND METHOD FOR DETECTING LEAKAGE CURRENT OF SEMICONDUCTOR MEMORY DEVICE, AND INTERNAL VOLTAGE GENERATING CIRCUIT USING THE SAME 失效
标题翻译：用于检测半导体存储器件的泄漏电流的装置和方法，以及使用其的内部电压产生电路
公开(公告)号：US20080219061A1
公开(公告)日：2008-09-11
申请号：US11966779
申请日：2007-12-28
申请人： Jun-Gi CHOI , Yoon-Jae Shin
发明人： Jun-Gi CHOI , Yoon-Jae Shin
IPC分类号： G11C5/14
CPC分类号： G11C5/14 , G11C11/4074
摘要： A semiconductor memory device is capable of generating a back bias voltage based on a target level changed according to a leakage current of the semiconductor memory devices, thereby minimizing the amount of the leakage current. The semiconductor memory device includes a leakage current detector and a back bias voltage generator. The leakage current detector is configured to detect a leakage current of a cell array. The back bias voltage generator is configured to generate a back bias voltage having a target level changed according to the leakage current.
摘要翻译：半导体存储器件能够基于根据半导体存储器件的漏电流而改变的目标电平产生反偏压，从而使漏电流的量最小化。半导体存储器件包括泄漏电流检测器和背偏置电压发生器。泄漏电流检测器被配置为检测电池阵列的漏电流。背偏置电压发生器被配置为产生具有根据泄漏电流而改变的目标电平的反向偏置电压。

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