
基本信息:
- 专利标题: Internal voltage generator of semiconductor memory device
- 专利标题(中):半导体存储器件的内部电压发生器
- 申请号:US11822005 申请日:2007-06-29
- 公开(公告)号:US20080080289A1 公开(公告)日:2008-04-03
- 发明人: Yoon-Jae Shin , Jun-Gi Choi
- 申请人: Yoon-Jae Shin , Jun-Gi Choi
- 专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人: HYNIX SEMICONDUCTOR INC.
- 优先权: JP2006-0095170 20060928
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
An internal voltage generator of a semiconductor memory device controls generating an internal voltage according to an increase of the internal voltage during an active mode, to thereby decrease current consumption. The internal voltage generator of a semiconductor memory device includes a voltage sensor, a plurality of first control units, a plurality of second control units, and a plurality of voltage drivers. The voltage sensor detects an internal voltage. The plurality of first control units generate a plurality of internal control signals according to the voltage level of an output of the voltage sensor. The plurality of second control units generate a plurality of driver control signals in response to the plurality of internal control signals. The plurality of voltage drivers are turned on/off in response to the plurality of driver control signals.
摘要(中):
半导体存储器件的内部电压发生器控制在活动模式期间根据内部电压的增加而产生内部电压,从而降低电流消耗。 半导体存储器件的内部电压发生器包括电压传感器,多个第一控制单元,多个第二控制单元和多个电压驱动器。 电压传感器检测内部电压。 多个第一控制单元根据电压传感器的输出的电压电平产生多个内部控制信号。 多个第二控制单元响应于多个内部控制信号产生多个驱动器控制信号。 响应于多个驱动器控制信号,多个电压驱动器被接通/断开。
公开/授权文献:
- US07599240B2 Internal voltage generator of semiconductor memory device 公开/授权日:2009-10-06