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1. 发明授权

US06720269B2 Semiconductor device having a self-aligned contact structure and methods of forming the same 失效
标题翻译：具有自对准接触结构的半导体器件及其形成方法
公开(公告)号：US06720269B2
公开(公告)日：2004-04-13
申请号：US10347219
申请日：2003-01-21
申请人： Byung-Jun Park , Yoo-Sang Hwang
发明人： Byung-Jun Park , Yoo-Sang Hwang
IPC分类号： H01L21311
CPC分类号： H01L27/10855 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L27/10885
摘要： A self-aligned contact structure in a semiconductor device and methods for making such contact structure wherein the semiconductor device has a semiconductor substrate having active regions, an interlayer insulating layer covering the semiconductor substrate excluding at least a portion of each active region, at least two parallel interconnections on the interlayer insulating layer, at least one active region being relatively disposed between the at least two parallel interconnections, each interconnection having sidewalls, bottom and a width (x), a mask pattern having a top portion (z) and a bottom portion (y) formed on each interconnection, and a conductive layer pattern penetrating at least a portion of the interlayer insulating layer between the mask pattern and being electrically connected to at least one active region, wherein: x≦y≦z and x
摘要翻译：半导体器件中的自对准接触结构以及用于制造这种接触结构的方法，其中半导体器件具有具有有源区的半导体衬底，覆盖半导体衬底的层间绝缘层，不包括每个有源区的至少一部分，至少两个所述层间绝缘层上的平行互连，至少一个有源区相对设置在所述至少两个平行互连之间，每个互连具有侧壁，底部和宽度（x），具有顶部（z）和底部形成在每个互连上的部分（y），以及穿透掩模图案之间的层间绝缘层的至少一部分并且与至少一个有源区电连接的导电层图案，其中：x <= y <= z和x

2. 发明授权

US06534813B1 Semiconductor device having a self-aligned contact structure and methods of forming the same 失效
标题翻译：具有自对准接触结构的半导体器件及其形成方法
公开(公告)号：US06534813B1
公开(公告)日：2003-03-18
申请号：US09889588
申请日：2001-08-02
申请人： Byung-Jun Park , Yoo-Sang Hwang
发明人： Byung-Jun Park , Yoo-Sang Hwang
IPC分类号： H01L27108
CPC分类号： H01L27/10855 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L27/10885
摘要： A self-aligned contact structure in a semiconductor device and methods of forming the same are provided, wherein the self-aligned contact structure in the semiconductor device comprises a semiconductor substrate having active regions; an interlayer insulating layer covering the semiconductor substrate excluding at least a portion of each active region; at least two parallel interconnections on the interlayer insulating layer, at least one active region being relatively disposed between the at least two parallel interconnections, each interconnection having sidewalls, a bottom and a width (x); a mask pattern having a top portion of width (z) and a bottom portion of width (y) formed on each interconnection; and a conductive layer pattern penetrating at least a portion of the interlayer insulating layer between the mask pattern and being electrically connected to at least one active region, wherein x≦y≦z and x
摘要翻译：提供半导体器件中的自对准接触结构及其形成方法，其中半导体器件中的自对准接触结构包括具有有源区的半导体衬底; 覆盖半导体衬底的层间绝缘层，所述层间绝缘层不包括每个有源区的至少一部分; 在所述层间绝缘层上的至少两个平行互连，至少一个有源区相对设置在所述至少两个平行互连之间，每个互连具有侧壁，底部和宽度（x）; 具有形成在每个互连上的宽度（z）的顶部和宽度（y）的底部的掩模图案; 以及导电层图案，其穿透所述掩模图案之间的所述层间绝缘层的至少一部分并与至少一个有源区电连接，其中x <= y

3. 发明授权

US06703657B2 DRAM cell having electrode with protection layer 有权
标题翻译： DRAM单元具有带保护层的电极
公开(公告)号：US06703657B2
公开(公告)日：2004-03-09
申请号：US10189737
申请日：2002-07-08
申请人： Yoo-Sang Hwang , Byung-Jun Park
发明人： Yoo-Sang Hwang , Byung-Jun Park
IPC分类号： H01L27108
CPC分类号： H01L28/90 , H01L21/76897 , H01L27/0207 , H01L27/10814 , H01L27/10855 , H01L27/10885
摘要： A DRAM cell is provided, along with a method for fabricating such a DRAM cell. A protection layer pattern is formed to cover a common drain region of first and second access transistors. Storage node holes are then formed to expose each source region of the first and second access transistors, by using an etching insulator that has an etching selectivity with respect to the protection layer. Accordingly, even if there is a misalignment of the storage node holes to the source regions, the common drain region is not exposed by the misaligned storage node holes because of the presence of the protection layer pattern.
摘要翻译：提供DRAM单元以及用于制造这种DRAM单元的方法。形成保护层图案以覆盖第一和第二存取晶体管的公共漏极区域。然后通过使用相对于保护层具有蚀刻选择性的蚀刻绝缘体，形成存储节点孔以暴露第一和第二存取晶体管的每个源极区域。因此，即使存在存储节点孔与源极区域不对准，由于保护层图案的存在，共同漏极区域也不会被未对准的存储节点孔露出。

4. 发明授权

US06489195B1 Method for fabricating DRAM cell using a protection layer 有权
标题翻译：使用保护层制造DRAM单元的方法
公开(公告)号：US06489195B1
公开(公告)日：2002-12-03
申请号：US09702795
申请日：2000-11-01
申请人： Yoo-Sang Hwang , Byung-Jun Park
发明人： Yoo-Sang Hwang , Byung-Jun Park
IPC分类号： H01L21265
CPC分类号： H01L28/90 , H01L21/76897 , H01L27/0207 , H01L27/10814 , H01L27/10855 , H01L27/10885
摘要： A DRAM cell is provided, along with a method for fabricating such a DRAM cell. A protection layer pattern is formed to cover a common drain region of first and second access transistors. Storage node holes are then formed to expose each source region of the first and second access transistors, by using an etching insulator that has an etching selectivity with respect to the protection layer. Accordingly, even if there is a misalignment of the storage node holes to thesource regions, the common drain region is not exposed by the misaligned storage node holes because of the presence of the protection layer pattern.
摘要翻译：提供DRAM单元以及用于制造这种DRAM单元的方法。形成保护层图案以覆盖第一和第二存取晶体管的公共漏极区域。然后通过使用相对于保护层具有蚀刻选择性的蚀刻绝缘体，形成存储节点孔以暴露第一和第二存取晶体管的每个源极区域。因此，即使存在存储节点孔与源极区域不对准，由于保护层图案的存在，公共漏极区域也不会被未对准的存储节点孔露出。

5. 发明授权

US11638736B2 Compositions for preventing or treating diseases or disorders associated with neuro-inflammation, neuro-apoptosis, or neuro- oxidative damage and uses thereof 有权
公开(公告)号：US11638736B2
公开(公告)日：2023-05-02
申请号：US17350751
申请日：2021-06-17
申请人： Byung-Jun Park
发明人： Byung-Jun Park
IPC分类号： A61K36/65 , A61K36/74 , A61K36/284 , A61K36/076 , A61K36/234 , A61P25/16 , A61K36/54 , A61K36/258 , A61K36/484 , A61K36/67 , A61K36/48 , A61K36/725
摘要： Provided herein are compositions for treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, pharmaceutical compositions comprising the compositions and pharmaceutically acceptable excipients, and nutraceutical compositions comprising the compositions and nutraceutically acceptable excipients. Provided also herein are methods of treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject in need thereof, methods of reducing, alleviating, or delaying a sign or a symptom of a disorder characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject in need thereof, and methods of regulating inflammation, antioxidant enzymes, and apoptosis in a subject having a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage.

6. 发明授权

US11045516B2 Compositions for preventing or treating diseases or disorders associated with neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage and uses thereof 有权
公开(公告)号：US11045516B2
公开(公告)日：2021-06-29
申请号：US16653596
申请日：2019-10-15
申请人： Byung-Jun Park
发明人： Byung-Jun Park
IPC分类号： A61K36/65 , A61K36/74 , A61K36/284 , A61K36/076 , A61K36/234 , A61P25/16 , A61K36/54 , A61K36/258 , A61K36/484 , A61K36/67 , A61K36/48 , A61K36/725
摘要： Provided herein are compositions for treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, pharmaceutical compositions comprising the compositions and pharmaceutically acceptable excipients, and pharmaceutical formulations comprising the compositions. Provided also herein are methods of treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, and methods of regulating inflammation, antioxidant enzymes, and apoptosis in a subject having a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage.

7. 发明申请

US20120091515A1 Semiconductor Devices Having Backside Illuminated Image Sensors 有权
标题翻译：具有背面照明图像传感器的半导体器件
公开(公告)号：US20120091515A1
公开(公告)日：2012-04-19
申请号：US13180898
申请日：2011-07-12
申请人： Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
发明人： Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
IPC分类号： H01L31/0224 , H01L23/48 , H01L31/0232
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14618 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L2224/13 , H04N5/2253 , H04N5/2254
摘要： A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.
摘要翻译：半导体衬底包括在支撑衬底上的光电二极管。在支撑基板和半导体基板之间设置绝缘层。第一导电图案设置在绝缘层中。第一穿透电极穿透支撑衬底以与第一导电图案接触。

8. 发明授权

US08043927B2 Method of manufacturing a CMOS image sensor 失效
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US08043927B2
公开(公告)日：2011-10-25
申请号：US12457773
申请日：2009-06-22
申请人： Byung-Jun Park , Tae-Hun Lee , Seung-Hun Shin
发明人： Byung-Jun Park , Tae-Hun Lee , Seung-Hun Shin
IPC分类号： H01L21/76
CPC分类号： H01L27/14683 , H01L27/1463 , H01L27/1464 , Y10S438/975
摘要： In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.
摘要翻译：在制造互补金属氧化物半导体（CMOS）图像传感器（CIS）的方法中，可以在包括芯片区域和划线区域的第一基板上形成外延层。可以通过将第一杂质注入到外延层中而与第一衬底相邻地形成第一杂质层。可以在芯片区域上的外延层中形成光电二极管。电连接到光电二极管的电路元件可以形成在外延层上。可以在外延层上形成保护电路元件的保护层。第二基底可以附着在保护层上。可以去除第一衬底以暴露外延层。可以使用第一杂质层作为对准键，在暴露的外延层上形成滤色器层。可以在滤色器层上形成微透镜。

9. 发明申请

US20090085143A1 Image sensor and method of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090085143A1
公开(公告)日：2009-04-02
申请号：US12285148
申请日：2008-09-30
申请人： Byung-Jun Park
发明人： Byung-Jun Park
IPC分类号： H01L27/146 , B44C1/22
CPC分类号： H01L27/14603 , H01L27/14636 , H01L27/1464 , H01L27/14683
摘要： Image sensors and methods of fabricating the same are provided. An image sensor may include a substrate, a first pad provided on a front side of the substrate, a second pad provided on a backside of the substrate, one or more contacts, each of the contacts passing through the substrate and electrically connecting the first pad with the second pad, and one or more guard rings, each of the guard rings surrounding one or more contacts and having insulating characteristics.
摘要翻译：提供了图像传感器及其制造方法。图像传感器可以包括基板，设置在基板的前侧上的第一焊盘，设置在基板的背面上的第二焊盘，一个或多个触点，每个触点穿过基板并电连接第一焊盘与第二焊盘和一个或多个保护环，每个保护环围绕一个或多个触点并具有绝缘特性。

10. 发明授权

US07411173B2 Image sensor and method of manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07411173B2
公开(公告)日：2008-08-12
申请号：US11447411
申请日：2006-06-06
申请人： Byung-Jun Park
发明人： Byung-Jun Park
IPC分类号： H01L31/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： An image sensor is provided. The image sensor includes a photodiode disposed in a semiconductor substrate and a first device isolating layer formed having an impurity with a conductivity type in the semiconductor substrate adjacent to the photodiode. The image sensor further includes a second device isolating layer composed of an insulating layer that covers the first device isolating layer. In addition, the image sensor further includes an interlayer insulating layer formed on the second device isolating layer and which is composed of a material with refractivity greater than that of the second device isolating layer.
摘要翻译：提供图像传感器。图像传感器包括设置在半导体衬底中的光电二极管和在半导体衬底中邻近光电二极管形成具有导电类型杂质的第一器件隔离层。图像传感器还包括由覆盖第一器件隔离层的绝缘层构成的第二器件隔离层。此外，图像传感器还包括形成在第二器件隔离层上并由折射率大于第二器件隔离层的折射率的材料构成的层间绝缘层。

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