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1. 发明申请

US20110156088A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110156088A1
公开(公告)日：2011-06-30
申请号：US12980136
申请日：2010-12-28
申请人： Yong Tae MOON , Chunli Liu
发明人： Yong Tae MOON , Chunli Liu
IPC分类号： H01L33/48 , B82Y99/00
CPC分类号： H01L33/08 , H01L33/16 , H01L2224/48091 , H01L2224/48247 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.
摘要翻译：发光器件包括光发射器上的至少一个粒子。第一波长的光沿着与颗粒相邻的第一路径从发射体行进，并且沿着穿过颗粒的第二路径沿第二波长传播。粒子将第二路径上的光从第一波长转换成第二波长。第一波长的光与第二波长的光混合以形成第三波长的光，其可以是白光或另一种颜色。

2. 发明申请

US20120104356A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120104356A1
公开(公告)日：2012-05-03
申请号：US13344814
申请日：2012-01-06
申请人： Dae Seob HAN , Yong Tae MOON , Ha Jong BONG
发明人： Dae Seob HAN , Yong Tae MOON , Ha Jong BONG
IPC分类号： H01L33/04
CPC分类号： H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括在第一和第二导电半导体层之间具有第一导电半导体层，第二导电半导体层和有源层的发光结构。有源层包括多个阱层和阻挡层。阻挡层的最外层的阻挡层包括多个第一层; 和多个第二层。

3. 发明申请

US20120043526A1 LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的照明系统
公开(公告)号：US20120043526A1
公开(公告)日：2012-02-23
申请号：US13288193
申请日：2011-11-03
申请人： Yong Tae MOON , Dae Seob Han , Jeong Sik Lee
发明人： Yong Tae MOON , Dae Seob Han , Jeong Sik Lee
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/04 , H01L33/12 , H01L33/32
摘要： Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.
摘要翻译：公开了一种发光器件和具有该发光器件的照明系统。发光器件包括第一导电型半导体层，包括与第一导电类型半导体层相邻的至少两个超晶格结构的界面层，与界面层相邻的有源层和与界面层相邻的第二导电型半导体层到活动层。第一导电型半导体层，界面层，有源层和第二导电型半导体层以相同的方向堆叠，第一和第二半导体层具有不同的导电类型，超晶格结构的能带隙相邻有源层小于与第一导电型半导体层相邻的超晶格结构的能带隙。

4. 发明申请

US20120132890A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME 有权
标题翻译：发光装置，发光装置包装和包括其的照明系统
公开(公告)号：US20120132890A1
公开(公告)日：2012-05-31
申请号：US13367829
申请日：2012-02-07
申请人： Yong Seon SONG , Yong Tae MOON
发明人： Yong Seon SONG , Yong Tae MOON
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32
摘要： A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.
摘要翻译：发光器件包括有源层，包括量子势垒和量子阱，设置在有源层一侧的第一导电类型半导体层和设置在有源层另一侧的第二导电类型半导体层，其中第一导电类型半导体层或第二导电类型半导体层包括主阻挡层，并且主阻挡层包括多个子阻挡层和设置在多个子阻挡层之间的基极层。多个子阻挡层包括其中多个子阻挡层中的能带间隙增加的第一部分和多个子阻挡层中的能带隙减小的第二部分。

5. 发明申请

US20120126202A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置和发光装置包装
公开(公告)号：US20120126202A1
公开(公告)日：2012-05-24
申请号：US13365465
申请日：2012-02-03
申请人： Yong Tae MOON , Seoung Hwan Park
发明人： Yong Tae MOON , Seoung Hwan Park
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.
摘要翻译：提供了发光器件，发光器件的制造方法，发光器件封装和照明系统。本实施例的发光器件包括第一导电半导体层; 第二导电半导体层; 以及包括第一导电半导体层和第二导电半导体层之间的量子阱和量子阱的有源层，其中量子阱的能带隙朝向量子阱的中心逐渐变成抛物线。

6. 发明申请

US20140361246A1 LIGHT EMITTING DEVICE AND LIGHTING SYSTEM 有权
标题翻译：发光装置和照明系统
公开(公告)号：US20140361246A1
公开(公告)日：2014-12-11
申请号：US14300566
申请日：2014-06-10
申请人： Yong Tae MOON , Hyun Chul Lim
发明人： Yong Tae MOON , Hyun Chul Lim
IPC分类号： H01L33/32 , H01L33/06 , H01L33/14 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0008 , H01L33/04 , H01L33/06 , H01L33/14
摘要： A light emitting device includes a first conductive semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum barrier (114b) on the first conductive semiconductor layer (112). An undoped last barrier layer (127) is provided on the active layer (114), and an AlxInyGa(1-x-y)N (0≦x≦1, 0≦y≦1)-based layer (128) is provided on the undoped last barrier layer (127). A second conductive semiconductor layer (116) is provided on the AlxInyGa(1-x-y)N-based layer (128).
摘要翻译：发光器件包括第一导电半导体层（112），在第一导电半导体层（112）上包括量子阱（114w）和量子势垒（114b）的有源层（114）。在有源层（114）上提供未掺杂的最后阻挡层（127），并且在所述有源层上提供Al x In y Ga（1-xy）N（0和n 1E; x和n 1E; 1,0＆未掺杂的最后阻挡层（127）。在Al x In y Ga（1-x-y）N基层（128）上设置第二导电半导体层（116）。

7. 发明申请

US20120012815A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120012815A1
公开(公告)日：2012-01-19
申请号：US13182879
申请日：2011-07-14
申请人： Yong Tae MOON
发明人： Yong Tae MOON
IPC分类号： H01L33/04 , H01L33/62
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer.
摘要翻译：本文公开了一种发光器件，其包括发光结构，该发光结构包括第一导电型半导体层，第二导电型半导体层和活性层，该有源层包括由氮化物形成的第一组合物的阱层的至少一个组合具有第一电子能的半导体材料和由具有比第一电子能量更高的电子能量的氮化物半导体材料形成的第二组合物的阻挡层以及设置在第二导电类型半导体层和有源层之间的界面层，在第一导电型半导体层和有源层之间。界面层包括具有不同能量带隙的第一层，第二层和第三层，第一层和第二层的能带隙大于阻挡层的能带隙，而第三层的能带隙小于能带隙阻挡层。

8. 发明申请

US20110284821A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置和发光装置包装
公开(公告)号：US20110284821A1
公开(公告)日：2011-11-24
申请号：US12979012
申请日：2010-12-27
申请人： Yong Tae MOON , Jeong Sik LEE , Joong Seo PARK , Ho Ki KWON , Seoung Hwan PARK
发明人： Yong Tae MOON , Jeong Sik LEE , Joong Seo PARK , Ho Ki KWON , Seoung Hwan PARK
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/382
摘要： The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.
摘要翻译：该实施例涉及发光器件和发光器件封装，其中发光器件包括第一导电类型半导体层，形成在第一导电类型半导体层上的有源层和形成在第一导电型半导体层上的第二导电类型半导体层活性层，其中所述有源层包括量子阱层和量子势垒层，并且所述第一导电类型半导体层或所述第二导电类型半导体层的面向晶格常数大于所述量子势垒的面向晶格常数并且小于量子阱层的面向晶格常数。

9. 发明申请

US20130228746A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US20130228746A1
公开(公告)日：2013-09-05
申请号：US13850344
申请日：2013-03-26
申请人： Yong Tae MOON , Jeong Sik LEE , Dae Seob HAN
发明人： Yong Tae MOON , Jeong Sik LEE , Dae Seob HAN
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
摘要翻译：提供发光器件，发光器件封装和照明系统。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一和第二导电类型半导体层之间的有源层。有源层包括与第二导电类型半导体层相邻的第一有源层，与第一导电类型半导体层相邻的第二有源层和在第一和第二有源层之间的栅极量子势垒。

10. 发明申请

US20120015466A1 METHOD FOR FABRICATING LIGHT EMITTING DEVICE 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20120015466A1
公开(公告)日：2012-01-19
申请号：US13240965
申请日：2011-09-22
申请人： Yong Tae MOON
发明人： Yong Tae MOON
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02483 , H01L21/02538 , H01L21/0254 , H01L21/02614 , H01L33/007
摘要： Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate.
摘要翻译：提供一种制造发光器件的方法。该方法包括形成氧化镓层; 在所述氧化镓层上形成第一导电型半导体层，有源层和第二导电型半导体层; 在所述第二导电型半导体层上形成非导电性基板; 在所述第一导电型半导体层上分离形成导电性基板的所述氧化镓层; 并分离非导电性基板。

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