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1. 发明授权

US09166100B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09166100B2
公开(公告)日：2015-10-20
申请号：US13344814
申请日：2012-01-06
申请人： Dae Seob Han , Yong Tae Moon , Ha Jong Bong
发明人： Dae Seob Han , Yong Tae Moon , Ha Jong Bong
IPC分类号： H01L33/06
CPC分类号： H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括在第一和第二导电半导体层之间具有第一导电半导体层，第二导电半导体层和有源层的发光结构。有源层包括多个阱层和阻挡层。阻挡层的最外层的阻挡层包括多个第一层; 和多个第二层。

2. 发明申请

US20120007040A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US20120007040A1
公开(公告)日：2012-01-12
申请号：US13177766
申请日：2011-07-07
申请人： Yong Tae MOON , Jeong Sik Lee , Dae Seob Han
发明人： Yong Tae MOON , Jeong Sik Lee , Dae Seob Han
IPC分类号： H01L33/06 , B82Y20/00
CPC分类号： H01L33/04 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
摘要翻译：提供发光器件，发光器件封装和照明系统。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一和第二导电类型半导体层之间的有源层。有源层包括与第二导电类型半导体层相邻的第一有源层，与第一导电类型半导体层相邻的第二有源层和在第一和第二有源层之间的栅极量子势垒。

3. 发明授权

US09337383B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09337383B2
公开(公告)日：2016-05-10
申请号：US13404615
申请日：2012-02-24
申请人： Dae Seob Han , Yong Tae Moon , Jong-In Shim
发明人： Dae Seob Han , Yong Tae Moon , Jong-In Shim
IPC分类号： H01L33/06 , H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , F21K9/23 , F21V29/507 , F21V29/83 , F21Y2115/10 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
摘要翻译：公开了一种包括第一导电类型半导体层的发光器件; 设置在所述第一导电型半导体层上的第二导电型半导体层; 以及设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，所述有源层包括量子阱层和量子势垒层，其中每个所述量子阱势垒层包括第一势垒层和设置在所述第二势垒层并且所述第二阻挡层的能量带隙大于所述量子阱层的能量带隙，并且小于所述第一阻挡层的能量带隙。

4. 发明授权

US08779425B2 Light emitting device, light emitting device package, and lighting system including the same 有权
标题翻译：发光器件，发光器件封装以及包括其的照明系统
公开(公告)号：US08779425B2
公开(公告)日：2014-07-15
申请号：US13850344
申请日：2013-03-26
申请人： Yong Tae Moon , Jeong Sik Lee , Dae Seob Han
发明人： Yong Tae Moon , Jeong Sik Lee , Dae Seob Han
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L33/04 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
摘要翻译：提供发光器件，发光器件封装和照明系统。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一和第二导电类型半导体层之间的有源层。有源层包括与第二导电类型半导体层相邻的第一有源层，与第一导电类型半导体层相邻的第二有源层和在第一和第二有源层之间的栅极量子势垒。

5. 发明申请

US20120104356A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120104356A1
公开(公告)日：2012-05-03
申请号：US13344814
申请日：2012-01-06
申请人： Dae Seob HAN , Yong Tae MOON , Ha Jong BONG
发明人： Dae Seob HAN , Yong Tae MOON , Ha Jong BONG
IPC分类号： H01L33/04
CPC分类号： H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括在第一和第二导电半导体层之间具有第一导电半导体层，第二导电半导体层和有源层的发光结构。有源层包括多个阱层和阻挡层。阻挡层的最外层的阻挡层包括多个第一层; 和多个第二层。

6. 发明申请

US20120043526A1 LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的照明系统
公开(公告)号：US20120043526A1
公开(公告)日：2012-02-23
申请号：US13288193
申请日：2011-11-03
申请人： Yong Tae MOON , Dae Seob Han , Jeong Sik Lee
发明人： Yong Tae MOON , Dae Seob Han , Jeong Sik Lee
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/04 , H01L33/12 , H01L33/32
摘要： Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.
摘要翻译：公开了一种发光器件和具有该发光器件的照明系统。发光器件包括第一导电型半导体层，包括与第一导电类型半导体层相邻的至少两个超晶格结构的界面层，与界面层相邻的有源层和与界面层相邻的第二导电型半导体层到活动层。第一导电型半导体层，界面层，有源层和第二导电型半导体层以相同的方向堆叠，第一和第二半导体层具有不同的导电类型，超晶格结构的能带隙相邻有源层小于与第一导电型半导体层相邻的超晶格结构的能带隙。

7. 发明授权

US08987757B2 Light emitting device and lighting system having the same 有权
标题翻译：发光装置和具有相同的照明系统
公开(公告)号：US08987757B2
公开(公告)日：2015-03-24
申请号：US13288193
申请日：2011-11-03
申请人： Yong Tae Moon , Dae Seob Han , Jeong Sik Lee
发明人： Yong Tae Moon , Dae Seob Han , Jeong Sik Lee
IPC分类号： H01L33/00 , H01L33/06 , H01L33/04 , H01L33/32 , H01L33/12
CPC分类号： H01L33/06 , H01L33/04 , H01L33/12 , H01L33/32
摘要： Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.
摘要翻译：公开了一种发光器件和具有该发光器件的照明系统。发光器件包括第一导电型半导体层，包括与第一导电类型半导体层相邻的至少两个超晶格结构的界面层，与界面层相邻的有源层和与界面层相邻的第二导电型半导体层到活动层。第一导电型半导体层，界面层，有源层和第二导电型半导体层以相同的方向堆叠，第一和第二半导体层具有不同的导电类型，超晶格结构的能带隙相邻有源层小于与第一导电型半导体层相邻的超晶格结构的能带隙。

8. 发明授权

US08421075B2 Light emitting device, light emitting device package, and lighting system including the same 有权
标题翻译：发光器件，发光器件封装以及包括其的照明系统
公开(公告)号：US08421075B2
公开(公告)日：2013-04-16
申请号：US13177766
申请日：2011-07-07
申请人： Yong Tae Moon , Jeong Sik Lee , Dae Seob Han
发明人： Yong Tae Moon , Jeong Sik Lee , Dae Seob Han
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L33/04 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.
摘要翻译：提供发光器件，发光器件封装和照明系统。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一和第二导电类型半导体层之间的有源层。有源层包括与第二导电类型半导体层相邻的第一有源层，与第一导电类型半导体层相邻的第二有源层和在第一和第二有源层之间的栅极量子势垒。

9. 发明授权

US08212265B2 Light emitting device and method for fabricating the light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08212265B2
公开(公告)日：2012-07-03
申请号：US13192985
申请日：2011-07-28
申请人： Dae Seob Han , Yong Tae Moon
发明人： Dae Seob Han , Yong Tae Moon
IPC分类号： H01L27/15 , H01L29/167 , H01L31/12 , H01L33/00
CPC分类号： H01L33/04 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.
摘要翻译：公开了一种发光器件，其包括具有第一导电半导体层，有源层和第二导电半导体层的发光结构，其中所述有源层设置在所述第一导电半导体层和所述第二导电半导体层之间，以及包括多个阱层和至少一个势垒层，其中所述阻挡层包括第一氮化物层和设置在所述第一氮化物层上的第二氮化物层，并且其中所述第一氮化物层具有比所述第二氮化物更大的能带隙而第二氮化物层的能带隙大于每个阱层的能带隙。

10. 发明申请

US20120319079A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120319079A1
公开(公告)日：2012-12-20
申请号：US13404615
申请日：2012-02-24
申请人： Dae Seob HAN , Yong Tae Moon , Jong-In Shim
发明人： Dae Seob HAN , Yong Tae Moon , Jong-In Shim
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , F21K9/23 , F21V29/507 , F21V29/83 , F21Y2115/10 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
摘要翻译：公开了一种包括第一导电类型半导体层的发光器件; 设置在所述第一导电型半导体层上的第二导电型半导体层; 以及设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，所述有源层包括量子阱层和量子势垒层，其中每个所述量子阱势垒层包括第一势垒层和设置在所述第二势垒层并且所述第二阻挡层的能量带隙大于所述量子阱层的能量带隙，并且小于所述第一阻挡层的能量带隙。

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