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1. 发明授权

US09178108B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US09178108B2
公开(公告)日：2015-11-03
申请号：US12979012
申请日：2010-12-27
申请人： Yong Tae Moon , Jeong Sik Lee , Joong Seo Park , Ho Ki Kwon , Seoung Hwan Park
发明人： Yong Tae Moon , Jeong Sik Lee , Joong Seo Park , Ho Ki Kwon , Seoung Hwan Park
IPC分类号： H01L33/06 , B82Y20/00 , H01L33/38 , H01L33/12
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/382
摘要： The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.
摘要翻译：该实施例涉及发光器件和发光器件封装，其中发光器件包括第一导电类型半导体层，形成在第一导电类型半导体层上的有源层和形成在第一导电型半导体层上的第二导电类型半导体层活性层，其中所述有源层包括量子阱层和量子势垒层，并且所述第一导电类型半导体层或所述第二导电类型半导体层的面向晶格常数大于所述量子势垒的面向晶格常数并且小于量子阱层的面向晶格常数。

2. 发明申请

US20100171132A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20100171132A1
公开(公告)日：2010-07-08
申请号：US12601901
申请日：2008-05-22
申请人： Do Yeol Ahn , Seoung Hwan Park
发明人： Do Yeol Ahn , Seoung Hwan Park
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/28
摘要： A light-emitting device is provided. The light-emitting device comprises a light-emitting layer having a first quaternary clad layer with a first material having a first composition ratio and a second material having a second composition ratio, a second quaternary clad layer with a third material having a third composition ratio and a fourth material having a fourth composition ratio, and an activation layer contacted with first clad layer and the second clad layer between them; a first electrode electrically contacted with the light-emitting layer; and, a second electrode electrically contacted with the light-emitting layer, wherein the first quaternary clad layer and the second quaternary clad layer have a predetermined energy band gap by controlling the first, second, third and fourth composition ratio, for removing the piezoelectric field and spontaneous polarization applied to the activation layer.
摘要翻译：提供了一种发光装置。发光装置包括发光层，其具有具有第一组成比的第一材料的第一季包层和具有第二组成比的第二材料，具有第三组成比的第三材料的第二季包层和具有第四组成比的第四材料，并且活化层与它们之间的第一包层和第二包层接触; 与发光层电接触的第一电极; 以及与所述发光层电接触的第二电极，其中，通过控制所述第一，第二，第三和第四组成比，所述第一季包层和所述第二季包层具有预定的能带隙，以去除所述压电场并且施加到活化层的自发极化。

3. 发明授权

US08415655B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08415655B2
公开(公告)日：2013-04-09
申请号：US13058595
申请日：2009-08-12
申请人： Jung Tae Jang , Bun Hei Koo , Do Yeol Ahn , Seoung Hwan Park
发明人： Jung Tae Jang , Bun Hei Koo , Do Yeol Ahn , Seoung Hwan Park
IPC分类号： H01L33/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/14
摘要： The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezoelectric effect; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.
摘要翻译：本公开涉及一种半导体发光器件，其包括：由有源层和形成为超晶格层的阻挡层构成的发光层，并且设置在有源层上和下方，以减轻施加到有源层的应力并减小通过自发极化和压电效应在有源层中产生的电场总和; 将电子注入到发光层中的N型接触层; 以及相对于发光层与N型接触层相对设置并向发光层注入空穴的P型接触层，其中，所述有源层含有InGaN，所述阻挡层通过交替堆叠而形成的AlGaN薄膜和InGaN薄膜。

4. 发明申请

US20120126202A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置和发光装置包装
公开(公告)号：US20120126202A1
公开(公告)日：2012-05-24
申请号：US13365465
申请日：2012-02-03
申请人： Yong Tae MOON , Seoung Hwan Park
发明人： Yong Tae MOON , Seoung Hwan Park
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.
摘要翻译：提供了发光器件，发光器件的制造方法，发光器件封装和照明系统。本实施例的发光器件包括第一导电半导体层; 第二导电半导体层; 以及包括第一导电半导体层和第二导电半导体层之间的量子阱和量子阱的有源层，其中量子阱的能带隙朝向量子阱的中心逐渐变成抛物线。

5. 发明授权

US06995297B1 Herb medicine composition to be contained in sanitary materials for infants 失效
标题翻译：用于婴儿卫生材料的草药成分
公开(公告)号：US06995297B1
公开(公告)日：2006-02-07
申请号：US10030737
申请日：2000-07-12
申请人： Deuk Hun Ahn , In Jin Baek , Seoung Hwan Park , Dong Hun Seo , Jung Hwan Baek
发明人： Deuk Hun Ahn , In Jin Baek , Seoung Hwan Park , Dong Hun Seo , Jung Hwan Baek
IPC分类号： A61F13/50 , A61F13/20
CPC分类号： A61K36/75 , A61K36/282 , A61K36/489 , A61K36/756 , A61K36/8945 , A61L15/40 , A61L15/46 , A61L2300/30 , A61K2300/00
摘要： The present invention relates to her medecine composition to be contained in sanitary materials for infants, which comprises Sophorae flavescens. Preferably, the composition of the present invention further contains one or more components selected from a group consisting of Phellodendri Cortex, Artemisia Folia, Dictamnus alpus and alum, besides Sophorae flavescens.
摘要翻译：本发明涉及其包含在婴儿卫生材料中的她的药物组合物，其包含槐花（Sophorae flavescens）。优选地，本发明的组合物还含有一种或多种选自Phellodendri Cortex，Artemisia Folia，Dictamnus alpus和明矾的组分，除了Sophorae flavescens之外。

6. 发明授权

US08536557B2 Light emitting device and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US08536557B2
公开(公告)日：2013-09-17
申请号：US13365465
申请日：2012-02-03
申请人： Yong Tae Moon , Seoung Hwan Park
发明人： Yong Tae Moon , Seoung Hwan Park
IPC分类号： H01L29/02
CPC分类号： H01L33/06 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well.
摘要翻译：提供了发光器件，发光器件的制造方法，发光器件封装和照明系统。本实施例的发光器件包括第一导电半导体层; 第二导电半导体层; 以及包括第一导电半导体层和第二导电半导体层之间的量子阱和量子阱的有源层，其中量子阱的能带隙朝向量子阱的中心逐渐变成抛物线。

7. 发明申请

US20110284821A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置和发光装置包装
公开(公告)号：US20110284821A1
公开(公告)日：2011-11-24
申请号：US12979012
申请日：2010-12-27
申请人： Yong Tae MOON , Jeong Sik LEE , Joong Seo PARK , Ho Ki KWON , Seoung Hwan PARK
发明人： Yong Tae MOON , Jeong Sik LEE , Joong Seo PARK , Ho Ki KWON , Seoung Hwan PARK
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/382
摘要： The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.
摘要翻译：该实施例涉及发光器件和发光器件封装，其中发光器件包括第一导电类型半导体层，形成在第一导电类型半导体层上的有源层和形成在第一导电型半导体层上的第二导电类型半导体层活性层，其中所述有源层包括量子阱层和量子势垒层，并且所述第一导电类型半导体层或所述第二导电类型半导体层的面向晶格常数大于所述量子势垒的面向晶格常数并且小于量子阱层的面向晶格常数。

8. 发明申请

US20110168973A1 LIGHT GENERATING DEVICE INCLUDING COMPOUND SEMICONDUCTOR AND METHOD OF DETERMINING COMPOUND RATIO OF COMPOUND SEMICONDUCTOR FOR LIGHT GENERATING DEVICE 有权
标题翻译：包括化合物半导体的发光装置和用于确定用于发光装置的化合物半导体的化合物比例的方法
公开(公告)号：US20110168973A1
公开(公告)日：2011-07-14
申请号：US12996051
申请日：2008-10-09
申请人： Do-Yeol Ahn , Seoung-Hwan Park , Jung-Tae Jang
发明人： Do-Yeol Ahn , Seoung-Hwan Park , Jung-Tae Jang
IPC分类号： H01L33/06 , B82Y99/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/0035 , H01S5/34333
摘要： A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.
摘要翻译：公开了一种制造具有所需波长的发光装置的方法。根据该方法，a）确定所需的波长。 b）确定对应于氮化物半导体中所需波长的极角和方位角。然后，c）根据极角和方位角生长氮化物半导体晶体。因此，可以在不调整化合物半导体的元素量的情况下制造具有所需波长的发光装置。

9. 发明申请

US20100117105A1 LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20100117105A1
公开(公告)日：2010-05-13
申请号：US12667141
申请日：2008-06-17
申请人： Do Yeol Ahn , Seoung Hwan Park
发明人： Do Yeol Ahn , Seoung Hwan Park
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01L33/16 , H01L33/12 , H01L33/26 , H01L33/32
摘要： Disclosed are a light-emitting diode and a method for fabricating the same. The ternary or quaternary Group III-V nitride semiconductor light-emitting diode comprises a buffer layer doped with conductive impurities and developed with an orientation inclined toward the axis [1122] at an angle of 40° to 70° with respect to the axis [0001] on a [0001]-oriented substrate, a light-emitting layer arranged on the buffer layer, a first electrode arranged under the buffer layer, and a second electrode arranged on the light-emitting layer, wherein the light-emitting layer includes a first clad layer arranged on the buffer layer, an activation layer arranged on the first clad layer and a second clad layer arranged on the activation layer. According to the semiconductor light-emitting diode, the light-emitting layer is formed on the substrate with an orientation inclined toward the axis [1122] at an angle of 40° to 70° with respect to the axis [0001], and compositions of Group III-V and Group II-VI compounds constituting the first and second clad layers are controlled. As a result, it is possible to offset the stresses applied to the activation layer and prevent spontaneous polarization. As a result, the light-emitting diode can exhibit improved light efficiency.
摘要翻译：公开了一种发光二极管及其制造方法。三元或四元组III-V族氮化物半导体发光二极管包括掺杂有导电杂质并以相对于轴[0001]以40°至70°的角度朝向轴线倾斜展开的缓冲层 ]，设置在缓冲层上的发光层，布置在缓冲层下方的第一电极和布置在发光层上的第二电极，其中发光层包括：布置在缓冲层上的第一包层，布置在第一包层上的活化层和布置在活化层上的第二包层。根据半导体发光二极管，发光层形成在基板上，相对于轴[0001]以相对于轴线[...]倾斜40°〜70°的方向，控制构成第一和第二包层的III-V族和II-VI族化合物。结果，可以抵消施加到激活层的应力并防止自发极化。结果，发光二极管可以表现出提高的光效率。

10. 发明授权

US08178375B2 Method of determining compound ratio of compound semiconductor for light generating device 有权
标题翻译：确定化合物半导体用于发光装置的化合物比例的方法
公开(公告)号：US08178375B2
公开(公告)日：2012-05-15
申请号：US12996051
申请日：2008-10-09
申请人： Do-Yeol Ahn , Seoung-Hwan Park , Jung-Tae Jang
发明人： Do-Yeol Ahn , Seoung-Hwan Park , Jung-Tae Jang
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/0035 , H01S5/34333
摘要： A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.
摘要翻译：公开了一种制造具有所需波长的发光装置的方法。根据该方法，a）确定所需的波长。 b）确定对应于氮化物半导体中所需波长的极角和方位角。然后，c）根据极角和方位角生长氮化物半导体晶体。因此，可以在不调整化合物半导体的元素量的情况下制造具有所需波长的发光装置。

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