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1. 发明授权

US07678597B2 Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact 有权
标题翻译：制造包括氮化镓半导体结构和钯接触的半导体器件的方法
公开(公告)号：US07678597B2
公开(公告)日：2010-03-16
申请号：US12323634
申请日：2008-11-26
申请人： Kenichi Ohtsuka , Yoichiro Tarui , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
发明人： Kenichi Ohtsuka , Yoichiro Tarui , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
IPC分类号： H01L21/00 , H01L21/28 , H01L21/3205
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/325 , H01L33/40 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/3063
摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.
摘要翻译：半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此在p型GaN接触层的表面上形成氧化膜。然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

2. 发明申请

US20090170304A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090170304A1
公开(公告)日：2009-07-02
申请号：US12337878
申请日：2008-12-18
申请人： Yoichiro Tarui , Kenichi Ohtsuka , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
发明人： Yoichiro Tarui , Kenichi Ohtsuka , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
IPC分类号： H01L21/441
CPC分类号： H01L21/28575 , H01L29/2003 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.
摘要翻译：提供一种制造半导体器件的方法，其可以将欧姆电极的接触电阻降低到p型氮化物半导体层，并且可以实现长期稳定的操作。在电极形成步骤中，通过在第一p型欧姆电极上连续层压作为第一p型欧姆电极的Pd膜和作为第二p型欧姆电极的Ta膜，在电极形成步骤中形成金属膜的p型欧姆电极 p型GaN接触层，金属膜形成为包含氧原子。在金属膜中存在氧原子的情况下，在热处理工序中，金属膜的p型欧姆电极在不含氧原子气体的气氛中进行热处理。

3. 发明申请

US20090142871A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090142871A1
公开(公告)日：2009-06-04
申请号：US12323634
申请日：2008-11-26
申请人： Kenichi Ohtsuka , Yoichiro Tarui , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
发明人： Kenichi Ohtsuka , Yoichiro Tarui , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/325 , H01L33/40 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/3063
摘要： A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.
摘要翻译：半导体器件的制造方法为半导体器件提供了氮化镓基半导体结构，其允许长期稳定的操作而不会降低器件性能。在表面以外的表面上形成绝缘膜之后，供给诸如O 2，O 3，NO，N 2 O或NO 2的含氧气体以从表面氧化p型GaN接触层，由此在p型GaN接触层的表面上形成氧化膜。然后，通过在氧化物膜和绝缘膜上的蒸发或溅射形成与p型GaN接触层建立接触的p型电极。随后在含有含氮气体如N 2或NH 3或惰性气体例如Ar或He的气氛中，在400-700℃的温度下进行热处理。

4. 发明授权

US07939943B2 Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer 有权
标题翻译：氮化物半导体器件包括与P型氮化物半导体接触层欧姆接触的电极
公开(公告)号：US07939943B2
公开(公告)日：2011-05-10
申请号：US12268509
申请日：2008-11-11
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kenichi Ohtsuka , Yoichiro Tarui , Yasunori Tokuda
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kenichi Ohtsuka , Yoichiro Tarui , Yasunori Tokuda
IPC分类号： H01L23/48 , H01L29/43
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.
摘要翻译：提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由作为防止氧化Ta膜的抗氧化剂膜和氮化物半导体的p型接触层的第一Pd膜，Ta膜和第二Pd膜形成。在第二Pd膜上形成焊盘电极。作为抗氧化剂膜的第二Pd膜形成在形成p电极的Ta膜的整个上表面上，以防止Ta膜的氧化。这抑制了p电极和焊盘电极之间的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供低电阻p电极。

5. 发明申请

US20090140389A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090140389A1
公开(公告)日：2009-06-04
申请号：US12268509
申请日：2008-11-11
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kenichi Ohtsuka , Yoichiro Tarui , Yasunori Tokuda
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kenichi Ohtsuka , Yoichiro Tarui , Yasunori Tokuda
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01L2924/00
摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.
摘要翻译：提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由作为防止氧化Ta膜的抗氧化剂膜和氮化物半导体的p型接触层的第一Pd膜，Ta膜和第二Pd膜形成。在第二Pd膜上形成焊盘电极。作为抗氧化剂膜的第二Pd膜形成在形成p电极的Ta膜的整个上表面上，以防止Ta膜的氧化。这抑制了p电极和焊盘电极之间的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供低电阻p电极。

6. 发明授权

US08680538B2 Silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件
公开(公告)号：US08680538B2
公开(公告)日：2014-03-25
申请号：US12867061
申请日：2008-02-12
申请人： Yoichiro Tarui , Kenichi Ohtsuka , Naruhisa Miura , Yoshinori Matsuno , Masayuki Imaizumi
发明人： Yoichiro Tarui , Kenichi Ohtsuka , Naruhisa Miura , Yoshinori Matsuno , Masayuki Imaizumi
IPC分类号： H01L29/15
CPC分类号： H01L29/66068 , H01L23/3171 , H01L23/3192 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/6606 , H01L29/7811 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer.
摘要翻译：为了获得在作为半导体元件驱动的单元部分的周边中提供用于电场弛豫的其终端部分中的高温操作中的耐受电压的稳定性和可靠性的确保的碳化硅半导体器件，端部设有具有高耐热性的无机保护膜，所述无机保护膜形成在作为形成在电池单元侧的第一区域的阱区的暴露表面上，以及具有高电绝缘能力的有机保护膜，在形成于与阱区的外侧表面形成并且与电池部分隔开的电场弛豫区域的表面上以及在碳化硅层的暴露表面上的电荷的一点影响。

7. 发明授权

US07564072B2 Semiconductor device having junction termination extension 有权
标题翻译：具有连接终端延伸的半导体器件
公开(公告)号：US07564072B2
公开(公告)日：2009-07-21
申请号：US11142322
申请日：2005-06-02
申请人： Kenichi Ohtsuka , Yoichiro Tarui , Yoshinori Matsuno , Kenichi Kuroda , Hiroshi Sugimoto
发明人： Kenichi Ohtsuka , Yoichiro Tarui , Yoshinori Matsuno , Kenichi Kuroda , Hiroshi Sugimoto
IPC分类号： H01L29/74
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/872 , Y10S388/917
摘要： A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under an edge of the anode electrode and a second p-type zone formed outside the first p-type zone having a lower surface impurity concentration than the first p-type zone. The second p-type zone is provided 15 μm or more outwardly away from the edge of the anode electrode. The surface impurity concentration of the first p-type zone ranges from 1.8×1013 to 4×1013 cm−2, and that of the second p-type zone ranges from 1×1013 to 2.5×1013 cm−2.
摘要翻译：半导体器件包括与形成在SiC衬底中的n型漂移层肖特基接触的阳极电极和形成在阳极电极外部的JTE区域。 JTE区域由在阳极电极的边缘的漂移层的上部形成的第一p型区域和形成在具有较低表面杂质浓度的第一p型区域外的第二p型区域构成比第一个p型区域。第二个p型区域距离阳极电极的边缘向外提供15个或更多个外部。第一p型区域的表面杂质浓度范围为1.8×1013〜4×1013cm-2，第二p型区域的表面杂质浓度为1×10 13〜2.5×10 13 cm -2。

8. 发明申请

US20100314629A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 失效
标题翻译：硅碳化硅半导体器件
公开(公告)号：US20100314629A1
公开(公告)日：2010-12-16
申请号：US12867061
申请日：2008-02-12
申请人： Yoichiro Tarui , Kenichi Ohtsuka , Naruhisa Miura , Yoshinori Matsuno , Masayuki Imaizumi
发明人： Yoichiro Tarui , Kenichi Ohtsuka , Naruhisa Miura , Yoshinori Matsuno , Masayuki Imaizumi
IPC分类号： H01L31/0312
CPC分类号： H01L29/66068 , H01L23/3171 , H01L23/3192 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/6606 , H01L29/7811 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer.
摘要翻译：为了获得在作为半导体元件驱动的单元部分的周边中提供用于电场弛豫的其终端部分中的高温操作中的耐受电压的稳定性和可靠性的确保的碳化硅半导体器件，端部设有具有高耐热性的无机保护膜，所述无机保护膜形成在作为形成在电池单元侧的第一区域的阱区的暴露表面上，以及具有高电绝缘能力的有机保护膜，在形成于与阱区的外侧表面形成并且与电池部分隔开的电场弛豫区域的表面上以及在碳化硅层的暴露表面上的电荷的一点影响。

9. 发明申请

US20060118812A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060118812A1
公开(公告)日：2006-06-08
申请号：US11142322
申请日：2005-06-02
申请人： Kenichi Ohtsuka , Yoichiro Tarui , Yoshinori Matsuno , Kenichi Kuroda , Hiroshi Sugimoto
发明人： Kenichi Ohtsuka , Yoichiro Tarui , Yoshinori Matsuno , Kenichi Kuroda , Hiroshi Sugimoto
IPC分类号： H01L29/74
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/872 , Y10S388/917
摘要： A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under an edge of the anode electrode and a second p-type zone formed outside the first p-type zone having a lower surface impurity concentration than the first p-type zone. The second p-type zone is provided 15 μm or more outwardly away from the edge of the anode electrode. The surface impurity concentration of the first p-type zone ranges from 1.8×1013 to 4×1013 cm−2, and that of the second p-type zone ranges from 1×1013 to 2.5×1013 cm−2.
摘要翻译：半导体器件包括与形成在SiC衬底中的n型漂移层肖特基接触的阳极电极和形成在阳极电极外部的JTE区域。 JTE区域由在阳极电极的边缘的漂移层的上部形成的第一p型区域和形成在具有较低表面杂质浓度的第一p型区域外的第二p型区域构成比第一个p型区域。第二个p型区域距离阳极电极的边缘向外提供15个或更多个外部。第一p型区域的表面杂质浓度范围为1.8×10 13〜4×10 -3 cm -2，而第二p型区域的表面杂质浓度为型区域范围为1×10 13至2.5×10 13 cm -2。

10. 发明授权

US5020072A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5020072A
公开(公告)日：1991-05-28
申请号：US401745
申请日：1989-09-01
申请人： Yuji Abe , Hiroshi Sugimoto , Kenichi Ohtsuka , Toshiyuki Oishi , Teruhito Matsui
发明人： Yuji Abe , Hiroshi Sugimoto , Kenichi Ohtsuka , Toshiyuki Oishi , Teruhito Matsui
IPC分类号： H01S5/00 , H01S5/12
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer, and a second semiconductor layer having the same composition as the first semiconductor layer, successively grown on the active layer, parallel stripe grooves of predetermined period reaching the first semiconductor layer produced at the entire surface of the grown layers, a cladding layer having the same composition as the first semiconductor layer which is re-grown thereon, and a diffraction grating constituted by the remainder of the diffraction grating layer. The coupling coefficient of the light is determined by the film thickness of a layer produced between the active layer and the diffraction grating layer, and the amplitude of the diffraction grating is determined by the layer thickness of the diffraction grating layer. Therefore, the coupling coefficient can be set at a design value at high precision and at high reproducibility.
摘要翻译：半导体激光器件包括有源层，具有比有源层大的能带隙的第一半导体层，具有比有源层更大的能带隙的衍射光栅层和比第一半导体层更小的能带隙，以及具有与第一半导体层相同的组成的第二半导体层，在有源层上依次生长，在生长层的整个表面上到达第一半导体层的预定周期的平行条纹沟槽，具有相同组成的包覆层作为在其上重新生长的第一半导体层，以及由衍射光栅层的其余部分构成的衍射光栅。光的耦合系数由有源层和衍射光栅层之间产生的层的膜厚决定，衍射光栅的振幅由衍射光栅层的层厚决定。因此，可以以高精度和高重现性将耦合系数设定在设计值。

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