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    • 4. 发明授权
    • Methods for fabricating a magnetic recording device
    • 制造磁记录装置的方法
    • US07785666B1
    • 2010-08-31
    • US11955266
    • 2007-12-12
    • Hai SunLiubo HongHongping YuanYizhong WangWinnie YuXianzhong Zeng
    • Hai SunLiubo HongHongping YuanYizhong WangWinnie YuXianzhong Zeng
    • B05D1/32
    • G11B5/855B82Y10/00B82Y40/00G03F7/0002
    • A method and system for fabricating a magnetic recording device are described. The method and system include providing a mask layer on the magnetic recording device and imprinting a pattern in the mask layer to form a mask. The method and system also include transferring the pattern from the mask to the magnetic recording device. In another aspect, the method and system include providing a malleable mask layer on the magnetic recording device. In this aspect, the method and system also include depressing an imprint mask into the mask layer and curing the mask layer while the imprint mask is depressed into the mask layer to provide a mask having a pattern. The pattern may correspond to a read sensor and/or a perpendicular magnetic recording pole. The method and system also include transferring the pattern from the mask to the magnetic recording device.
    • 描述了用于制造磁记录装置的方法和系统。 所述方法和系统包括在磁记录装置上设置掩模层并在掩模层中印刷图案以形成掩模。 该方法和系统还包括将图案从掩模转移到磁记录装置。 在另一方面,该方法和系统包括在磁记录装置上提供可延展的掩模层。 在这方面,该方法和系统还包括将印模掩模压入掩模层中并固化掩模层,同时将印模掩模压入掩模层中以提供具有图案的掩模。 图案可以对应于读取传感器和/或垂直磁记录极。 该方法和系统还包括将图案从掩模转移到磁记录装置。
    • 7. 发明授权
    • Method and system for exposing a photoresist in a magnetic device
    • 用于在磁性装置中曝光光致抗蚀剂的方法和系统
    • US08169473B1
    • 2012-05-01
    • US12056494
    • 2008-03-27
    • Winnie YuHai SunHongping YuanXianzhong Zeng
    • Winnie YuHai SunHongping YuanXianzhong Zeng
    • G03B27/32G03B27/42
    • G03B27/32G03B27/53G03F7/70425
    • A method and system for exposing a plurality of fields on a substrate. The substrate has a center and an edge. The fields include a plurality of rows. The method and system include determining an exposure sequence for the plurality of fields. Each of the plurality of fields has a distance from the center and a placement in the exposure sequence. The placement of a field in the exposure sequence is based on the distance and excludes placing each of the plurality of fields in a row of the plurality of rows next to an adjacent field in the row in combination with placing each of the plurality of rows next to an adjacent row. The method and system also include exposing the plurality of fields in the exposure sequence in order of the placement.
    • 一种用于在衬底上暴露多个场的方法和系统。 基板具有中心和边缘。 这些字段包括多行。 该方法和系统包括确定多个场的曝光序列。 多个场中的每一个具有与中心的距离和曝光序列中的位置。 曝光序列中的场的放置基于该距离,并且排除将多个场中的每一个放置在与行中的相邻场相邻的多行中的每一行中,并将下一个行中的每一行相结合 到相邻行。 该方法和系统还包括以放置顺序暴露曝光序列中的多个场。
    • 8. 发明授权
    • Method and system for exposing photoresist in a microelectric device
    • 用于在微电子器件中曝光光致抗蚀剂的方法和系统
    • US09274438B1
    • 2016-03-01
    • US12146370
    • 2008-06-25
    • Hongping YuanHai SunXianzhong ZengWinnie Yu
    • Hongping YuanHai SunXianzhong ZengWinnie Yu
    • G03C5/04G03F7/20H01L21/027
    • G03F7/2022G03F7/70466H01L21/0274
    • A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.
    • 一种方法和系统在衬底上的场上提供微电子器件。 每个场包括至少一个具有关键装置特征的微电子装置和远离关键装置特征的剩余装置特征。 所述方法和系统包括提供用于制造微电子器件的光致抗蚀剂层并且使用暗场掩模曝光光致抗蚀剂层。 暗场掩模用于定义与关键设备特征对应的关键掩模特征并暴露场的第一部分。 第一部分不超过每个领域的百分之五。 该方法和系统还包括使用清晰的场屏蔽来曝光光致抗蚀剂层。 清除场掩模用于定义对应于剩余设备特征的剩余掩模特征。 清除场掩模曝光与第一部分不同的场的第二部分。