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1. 发明授权

US06430806B1 Method for manufacturing an inductive write element employing bi-layer photoresist to define a thin high moment pole pedestal 失效
标题翻译：用于制造使用双层光致抗蚀剂以定义薄的高力矩极基座的感应写入元件的方法
公开(公告)号：US06430806B1
公开(公告)日：2002-08-13
申请号：US09602536
申请日：2000-06-23
申请人： Yingjian Chen , Ron Barr , Hua-Ching Tong , Stone Shi , Kyusik Sin
发明人： Yingjian Chen , Ron Barr , Hua-Ching Tong , Stone Shi , Kyusik Sin
IPC分类号： G11B5147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3146 , G11B5/3967 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： An inductive write element for use with a magnetic data recording and retrieval system is provided. The write element includes a magnetic yoke having an electrically conductive coil passing there through. The yoke is constructed of first and second magnetic poles, and performance of the write element is improved by the inclusion of a very thin pedestal of a high magnetic moment material on the first pole in the pole tip region. Further performance gains are realized by providing a tapered edge on the pedestal to facilitate magnetic flux flow through the pedestal.
摘要翻译：提供了一种用于磁数据记录和检索系统的感应写入元件。写入元件包括具有通过其的导电线圈的磁轭。轭由第一和第二磁极构成，并且通过在极尖区域的第一极上包括非常薄的高磁矩材料基座来提高写入元件的性能。通过在基座上设置锥形边缘以促进通过基座的磁通量来实现进一步的性能增益。

2. 发明授权

US06650503B1 Inductive write head including a thin high moment pedestal having a tapered edge 失效
标题翻译：感应写入头包括具有锥形边缘的薄的高矩基座
公开(公告)号：US06650503B1
公开(公告)日：2003-11-18
申请号：US10170979
申请日：2002-06-13
申请人： Yingjian Chen , Ron Barr , Hua-Ching Tong , Stone Shi , Kyusik Sin
发明人： Yingjian Chen , Ron Barr , Hua-Ching Tong , Stone Shi , Kyusik Sin
IPC分类号： G11B5147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3146 , G11B5/3967 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： An inductive write element for use with a magnetic data recording and retrieval system is provided. The write element includes a magnetic yoke having an electrically conductive coil passing there through. The yoke is constructed of first and second magnetic poles, and performance of the write element is improved by the inclusion of a very thin pedestal of a high magnetic moment material on the first pole in the pole tip region. Further performance gains are realized by providing a tapered edge on the pedestal to facilitate magnetic flux flow through the pedestal.
摘要翻译：提供了一种用于磁数据记录和检索系统的感应写入元件。写入元件包括具有通过其的导电线圈的磁轭。轭由第一和第二磁极构成，并且通过在极尖区域的第一极上包括非常薄的高磁矩材料基座来提高写入元件的性能。通过在基座上设置锥形边缘以促进通过基座的磁通量来实现进一步的性能增益。

3. 发明授权

US07110289B1 Method and system for controlling MRAM write current to reduce power consumption 有权
标题翻译：用于控制MRAM写入电流以减少功耗的方法和系统
公开(公告)号：US07110289B1
公开(公告)日：2006-09-19
申请号：US10816271
申请日：2004-03-31
申请人： Kyusik Sin , Hugh Craig Hiner , Xizeng (Stone) Shi , William D. Jensen , Hua-Ching Tong , Matthew R Gibbons , Roberto Bez , Giulio Casagrande , Paolo Cappeletti , Marco Pasotti
发明人： Kyusik Sin , Hugh Craig Hiner , Xizeng (Stone) Shi , William D. Jensen , Hua-Ching Tong , Matthew R Gibbons , Roberto Bez , Giulio Casagrande , Paolo Cappeletti , Marco Pasotti
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.
摘要翻译：在用于减少由磁存储器消耗的功率的方法和系统中，磁存储器单元耦合到位线并与多个数字线相关联。位线中提供位线电流。与位线电流基本相同的时刻，在数字线中并联提供数字电流。数字和位线电流允许磁存储单元被并行写入多个状态。

4. 发明授权

US06661625B1 Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier 有权
标题翻译：具有低电阻金属氧化物隧道势垒的自旋相关隧道传感器
公开(公告)号：US06661625B1
公开(公告)日：2003-12-09
申请号：US09789207
申请日：2001-02-20
申请人： Kyusik Sin , Ming Mao , Hua-Ching Tong , Chester Xiaowen Chien
发明人： Kyusik Sin , Ming Mao , Hua-Ching Tong , Chester Xiaowen Chien
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (CrxOy) or niobium oxide (NbOz). The chromium oxide material (CrxOy) can be, for example: Cr3O4, Cr2O3, CrO2, CrO3, Cr5O12, Cr6O15, other stoichiometry, or any combination thereof. The niobium oxide (NbOz) can be, for example: NbO, NbO2, Nb2O5, Nb2O3, Nb12O29, Nb11O27, other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.
摘要翻译：具有高性能读取部分的薄膜读/写头，其包括由诸如氧化铬（Cr x O y）或氧化铌（NbO z）的新的低电阻金属氧化物隧道势垒材料组成的自旋相关隧道传感器。氧化铬材料（Cr x O y）可以是例如：Cr 3 O 4，Cr 2 O 3，CrO 2，CrO 3，Cr 5 O 12，Cr 6 O 15，其它化学计量或其任何组合。铌氧化物（NbOz）可以是例如NbO，NbO 2，Nb 2 O 5，Nb 2 O 3，Nb 12 O 29，Nb 11 O 27，其它化学计量或其任何组合。氧化铬和氧化铌材料提供了具有可接受的磁阻比的非常低的传感器电阻，这将使得能够制造高密度读取传感器，并且因此读取具有高数据传输速率的磁头。

5. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

6. 发明授权

US06639291B1 Spin dependent tunneling barriers doped with magnetic particles 有权
标题翻译：掺杂有磁性颗粒的自旋相关隧道势垒
公开(公告)号：US06639291B1
公开(公告)日：2003-10-28
申请号：US10071796
申请日：2002-02-06
申请人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
IPC分类号： H01L2972
CPC分类号： H01L27/226 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L29/66984 , H01L43/08
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
摘要翻译：公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。增加隧道屏障的厚度可以提高制造成本，例如提高产量。

7. 发明授权

US06888184B1 Shielded magnetic ram cells 有权
标题翻译：屏蔽磁性柱塞电池
公开(公告)号：US06888184B1
公开(公告)日：2005-05-03
申请号：US10074394
申请日：2002-02-11
申请人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
发明人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
IPC分类号： G11C11/16 , H01L21/336 , H01L27/22
CPC分类号： G11C11/16 , H01L27/222
摘要： A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.
摘要翻译：公开了一种在半导体衬底上制造的磁存储器。该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。多个磁隧道结中的每一个包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。多个屏蔽件与多个磁性隧道结电隔离。多个磁隧道结在多个屏蔽之间。

8. 发明授权

US07289303B1 Spin valve sensors having synthetic antiferromagnet for longitudinal bias 失效
标题翻译：旋转阀传感器具有用于纵向偏置的合成反铁磁体
公开(公告)号：US07289303B1
公开(公告)日：2007-10-30
申请号：US09828635
申请日：2001-04-05
申请人： Kyusik Sin , Ningjia Zhu , Yingjian Chen
发明人： Kyusik Sin , Ningjia Zhu , Yingjian Chen
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , H01F10/3272 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.
摘要翻译：公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻（MR）传感器。传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层，以及具有与交换耦合层邻接的固定磁矩的铁磁层。交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构，提供降低自由层边缘的磁性不稳定性的偏压。这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压，以及比常规硬磁偏置层更精确地定义的轨道宽度。合成反铁磁性结构也可以在加工过程中为自由层提供保护，与如果不除去部分自由层的常规反铁磁层的修整相反。

9. 发明授权

US08455119B1 Disk having an underlayer that includes a plurality of nonmagnetic layers interleaved with magnetic layers 有权
标题翻译：具有包括与磁性层交错的多个非磁性层的底层的磁盘
公开(公告)号：US08455119B1
公开(公告)日：2013-06-04
申请号：US13118218
申请日：2011-05-27
申请人： Hai Jiang , Kyusik Sin , Yingjian Chen
发明人： Hai Jiang , Kyusik Sin , Yingjian Chen
IPC分类号： G11B5/66
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/313 , G11B5/3967 , G11B2005/3996 , Y10T428/12465
摘要： A magnetic disk includes a substrate, a soft magnetic underlayer disposed over the substrate, and a media layer disposed over the underlayer. The underlayer includes a plurality of magnetic layers each containing FeCoN having an atomic concentration of iron that is greater than an atomic concentration of cobalt, and has an atomic concentration of nitrogen that is less than the atomic concentration of cobalt. The atomic concentration of nitrogen is less than eight percent. The underlayer includes a plurality of nonmagnetic layers that are interleaved with the magnetic layers. Each of the nonmagnetic layers has a thickness that is less than one-tenth that of an adjoining layer of the magnetic layers. The media layer contains a magnetically hard material having an easy axis of magnetization oriented substantially perpendicular to both the media layer and the underlayer.
摘要翻译：磁盘包括衬底，设置在衬底上的软磁性底层，以及设置在衬底上的介质层。底层包括多个磁性层，每个磁性层含有铁原子浓度大于钴的原子浓度的FeCoN，并且其原子浓度小于钴的原子浓度。原子浓度低于8％。底层包括与磁性层交错的多个非磁性层。每个非磁性层的厚度小于磁性层相邻层的十分之一。介质层包含磁性硬的材料，其易磁化轴定向成基本垂直于介质层和底层。

10. 发明授权

US08018677B1 Magnetic recording head formed by damascene process 有权
标题翻译：磁记录头由镶嵌工艺形成
公开(公告)号：US08018677B1
公开(公告)日：2011-09-13
申请号：US11923043
申请日：2007-10-24
申请人： Ki Sup Chung , Kyusik Sin , Danning Yang , Yingjian Chen , Brant Nease
发明人： Ki Sup Chung , Kyusik Sin , Danning Yang , Yingjian Chen , Brant Nease
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and system for manufacturing a pole for a magnetic recording head. The method and system include providing an insulator and fabricating at least one hard mask on the insulator. The at least one hard mask has an aperture therein. The method and system also include removing a portion of the insulator to form a trench within the insulator. The trench is formed under the aperture. The method and system further include depositing at least one ferromagnetic material. The pole includes a portion of the ferromagnetic material within the trench.
摘要翻译：一种用于制造用于磁记录头的磁极的方法和系统。该方法和系统包括提供绝缘体并在绝缘体上制造至少一个硬掩模。至少一个硬掩模在其中具有孔。该方法和系统还包括去除绝缘体的一部分以在绝缘体内形成沟槽。沟槽形成在孔下面。所述方法和系统还包括沉积至少一种铁磁材料。极包括沟槽内的铁磁材料的一部分。

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