专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06661625B1 Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier 有权
标题翻译：具有低电阻金属氧化物隧道势垒的自旋相关隧道传感器
公开(公告)号：US06661625B1
公开(公告)日：2003-12-09
申请号：US09789207
申请日：2001-02-20
申请人： Kyusik Sin , Ming Mao , Hua-Ching Tong , Chester Xiaowen Chien
发明人： Kyusik Sin , Ming Mao , Hua-Ching Tong , Chester Xiaowen Chien
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (CrxOy) or niobium oxide (NbOz). The chromium oxide material (CrxOy) can be, for example: Cr3O4, Cr2O3, CrO2, CrO3, Cr5O12, Cr6O15, other stoichiometry, or any combination thereof. The niobium oxide (NbOz) can be, for example: NbO, NbO2, Nb2O5, Nb2O3, Nb12O29, Nb11O27, other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.
摘要翻译：具有高性能读取部分的薄膜读/写头，其包括由诸如氧化铬（Cr x O y）或氧化铌（NbO z）的新的低电阻金属氧化物隧道势垒材料组成的自旋相关隧道传感器。氧化铬材料（Cr x O y）可以是例如：Cr 3 O 4，Cr 2 O 3，CrO 2，CrO 3，Cr 5 O 12，Cr 6 O 15，其它化学计量或其任何组合。铌氧化物（NbOz）可以是例如NbO，NbO 2，Nb 2 O 5，Nb 2 O 3，Nb 12 O 29，Nb 11 O 27，其它化学计量或其任何组合。氧化铬和氧化铌材料提供了具有可接受的磁阻比的非常低的传感器电阻，这将使得能够制造高密度读取传感器，并且因此读取具有高数据传输速率的磁头。

2. 发明授权

US08222599B1 Precise metrology with adaptive milling 有权
标题翻译：具有自适应铣削的精确计量
公开(公告)号：US08222599B1
公开(公告)日：2012-07-17
申请号：US12424323
申请日：2009-04-15
申请人： Chester Xiaowen Chien
发明人： Chester Xiaowen Chien
IPC分类号： H01J37/30 , H01J37/252 , G01N23/00
CPC分类号： H01J37/28 , H01J37/3056 , H01J2237/281 , H01J2237/31745 , H01J2237/31749 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a three-dimensional device in a wafer is provided. The method comprises the step of forming a trench in the wafer. The trench has a facet passing through the three-dimensional device a predetermined offset from a desired image position. The method further comprises iteratively, until a remaining distance between the facet and the desired image position is less than a predetermined threshold, adjusting one or more parameters of a polishing beam based on the remaining distance, polishing the facet with the polishing beam to position the facet closer to the desired image position, and measuring the remaining distance.
摘要翻译：提供了一种测量晶片中的三维器件的方法。该方法包括在晶片中形成沟槽的步骤。沟槽具有从所需图像位置穿过三维装置预定偏移的小平面。该方法还包括迭代地，直到小面和期望图像位置之间的剩余距离小于预定阈值，基于剩余距离调整抛光光束的一个或多个参数，用抛光光束抛光小面以将抛光光束定位小面更靠近所需的图像位置，并测量剩余距离。

3. 发明授权

US06721138B1 Inductive transducer with stitched pole tip and pedestal defining zero throat height 有权
标题翻译：具有缝合极尖和底座的感应传感器，定义零喉部高度
公开(公告)号：US06721138B1
公开(公告)日：2004-04-13
申请号：US09999694
申请日：2001-10-24
申请人： Yingjian Chen , Xizeng Shi , Hugh Craig Hiner , Zi-Wen Dong , Francis Liu , Matthew R. Gibbons , Joyce Anne Thompson , William D. Jensen , Chester Xiaowen Chien , Yugang Wang
发明人： Yingjian Chen , Xizeng Shi , Hugh Craig Hiner , Zi-Wen Dong , Francis Liu , Matthew R. Gibbons , Joyce Anne Thompson , William D. Jensen , Chester Xiaowen Chien , Yugang Wang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3153 , G11B5/3163 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： An inductive transducer having first and second magnetic pedestals disposed between first and second magnetic pole layers and adjacent to a media-facing surface, the pedestals separated by a submicron, nonmagnetic gap. The first pedestal extends less than the second pedestal from the media-facing surface, defining a short throat height. The second pedestal extends further to provide sufficient area for stitching to the second pole layer. The stitching and the thickness provided by the pedestals allow plural coil layers to be disposed between the pole layers, and the second pedestal, as well as other features, can be defined by high-resolution photolithography. The two coil layers have lower resistance, lower inductance and allow the pole layers to be shorter, improving performance. All or part of either or both of the pedestals may be formed of high magnetic saturation material, further enhancing performance.
摘要翻译：一种感应换能器，其具有设置在第一和第二磁极层之间并且邻近介质面向表面的第一和第二磁性基座，所述基座由亚微米非磁性间隙分开。第一基座从面向介质的表面延伸小于第二基座，限定短的喉部高度。第二基座进一步延伸以提供足够的面积用于缝合到第二极层。由基座提供的缝合和厚度允许在极层之间设置多个线圈层，并且第二基座以及其它特征可以通过高分辨率光刻来定义。两个线圈层具有较低的电阻，较低的电感，并允许极层更短，从而提高性能。基座中的一个或两个的全部或一部分可以由高磁饱和材料形成，进一步提高性能。

4. 发明授权

US08097846B1 Metrology and 3D reconstruction of devices in a wafer 有权
标题翻译：晶圆中的器件的计量和3D重建
公开(公告)号：US08097846B1
公开(公告)日：2012-01-17
申请号：US12392887
申请日：2009-02-25
申请人： Alexandre Anguelouch , Lei Wang , Chester Xiaowen Chien
发明人： Alexandre Anguelouch , Lei Wang , Chester Xiaowen Chien
IPC分类号： G01N23/00 , H01J37/252 , H01J37/30
CPC分类号： G11B5/3166 , G11B5/1278 , G11B5/3116 , G11B5/3173 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817 , H01J2237/3174 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for measuring three-dimensional devices in a wafer comprises the step of obtaining a plurality of cross-sectional images of a corresponding plurality of three-dimensional devices in the wafer. The plurality of three-dimensional devices have essentially identical geometries. Each cross-sectional image is obtained from a plane in the corresponding three-dimensional device at a predetermined distance from a fiducial mark thereof. The predetermined distance is different for each of the plurality of cross-sectional images. The method further comprises the step of determining the geometries of the plurality of three-dimensional devices based on the cross-sectional images thereof.
摘要翻译：用于测量晶片中的三维器件的方法包括获得晶片中相应的多个三维器件的多个横截面图像的步骤。多个三维装置具有基本相同的几何形状。每个横截面图像从相对应的三维装置的与其基准标记预定距离处的平面获得。对于多个横截面图像中的每一个，预定距离是不同的。该方法还包括基于其横截面图像来确定多个三维装置的几何形状的步骤。

5. 发明授权

US06448765B1 Microscopic tips having stable magnetic moments and disposed on cantilevers for sensing magnetic characteristics of adjacent structures 失效
标题翻译：具有稳定磁矩并设置在悬臂上的微观尖端，用于感测相邻结构的磁特性
公开(公告)号：US06448765B1
公开(公告)日：2002-09-10
申请号：US09429783
申请日：1999-10-28
申请人： Hong Chen , Chester Xiaowen Chien
发明人： Hong Chen , Chester Xiaowen Chien
IPC分类号： G01R3302
CPC分类号： G01Q60/56 , G01R33/0385 , Y10S977/865 , Y10S977/934
摘要： A magnetic force microscope (MFM) needle has a magnetic material with a magnetic moment that is pinned in a preferred direction. The magnetic moment can be of lower than conventional magnitude without risking an undesirable change in the direction of magnetization. The magnetic needle can have a ferromagnetic layer (or layers) that is stabilized by an antiferromagnetic layer (or layers). The needle can be employed as a magnetoresistance sensitivity microscope (MSM) to map the sensitivity of a magnetic sensor, such as a magnetoresistive (MR) or giant magnetoresistive (GMR) sensor. Alternatively, the needle can be employed in measuring magnetic fields, such as with a high frequency magnetic force microscope (HFMFM).
摘要翻译：磁力显微镜（MFM）针具有磁性材料，其磁矩被钉在优选的方向上。磁矩可以低于传统的幅值，而不会造成磁化方向的不希望的变化。磁针可以具有由反铁磁层（或多层）稳定的铁磁层（或多层）。该针可以用作磁阻灵敏度显微镜（MSM）来映射诸如磁阻（MR）或巨磁阻（GMR）传感器之类的磁传感器的灵敏度。或者，针可以用于测量磁场，例如用高频磁力显微镜（HFMFM）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式