专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

2. 发明授权

US06639291B1 Spin dependent tunneling barriers doped with magnetic particles 有权
标题翻译：掺杂有磁性颗粒的自旋相关隧道势垒
公开(公告)号：US06639291B1
公开(公告)日：2003-10-28
申请号：US10071796
申请日：2002-02-06
申请人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
IPC分类号： H01L2972
CPC分类号： H01L27/226 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L29/66984 , H01L43/08
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
摘要翻译：公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。增加隧道屏障的厚度可以提高制造成本，例如提高产量。

3. 发明授权

US06418048B1 Spin-dependent tunneling sensor suitable for a magnetic memory 有权
标题翻译：旋转依赖隧道传感器适用于磁存储器
公开(公告)号：US06418048B1
公开(公告)日：2002-07-09
申请号：US09969315
申请日：2001-10-02
申请人： Kyusik Sin , Shin Funada , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh C. Hiner , Xizeng Shi
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.
摘要翻译：公开了一种用于提供顶部钉扎自旋相关隧道传感器的方法和系统。该方法和系统包括提供自由层，隧道势垒，合成钉扎层和反铁磁层。自由层是铁磁性的。隧道屏障是绝缘体。隧道势垒设置在自由层和合成钉扎层之间。合成钉扎层是铁磁性的并且包括铁磁顶层。合成钉扎层位于隧道势垒和反铁磁层之间。铁磁顶层用作反铁磁层的种子层。

4. 发明授权

US08778198B2 Method for manufacturing a magnetoresistive sensor using simultaneously formed hard bias and electrical lapping guide 有权
标题翻译：使用同时形成的硬偏置和电研磨导向器制造磁阻传感器的方法
公开(公告)号：US08778198B2
公开(公告)日：2014-07-15
申请号：US13172739
申请日：2011-06-29
申请人： Quang Le , Shin Funada , Jui-Lung Li
发明人： Quang Le , Shin Funada , Jui-Lung Li
IPC分类号： B44C1/22
CPC分类号： G03F7/20 , B82Y10/00 , G11B5/3169 , G11B5/3909 , G11B2005/3996
摘要： A method for manufacturing a magnetic sensor using an electrical lapping guide deposited and patterned simultaneously with a hard bias structure of the sensor material. The method includes depositing a sensor material, and patterning and ion milling the sensor material to define a track width of the sensor. A magnetic, hard bias material is then deposited and a second patterning and ion milling process is performed to simultaneously define the back edge of an electrical lapping guide and a back edge of the sensor.
摘要翻译：一种用传感器材料的硬偏置结构沉积和图案化的电研磨导向器制造磁传感器的方法。该方法包括沉积传感器材料，以及图案化和离子铣削传感器材料以限定传感器的轨道宽度。然后沉积磁性，硬偏置材料，并且执行第二图案化和离子铣削工艺以同时限定电研磨引导件的后边缘和传感器的后边缘。

5. 发明授权

US08296930B2 Method for manufacturing a magnetoresistive sensor having a flat shield 有权
标题翻译：具有平面屏蔽的磁阻传感器的制造方法
公开(公告)号：US08296930B2
公开(公告)日：2012-10-30
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

6. 发明授权

US07417832B1 Magnetoresistive structure having a novel specular and filter layer combination 失效
标题翻译：具有新颖镜面和滤光层组合的磁阻结构
公开(公告)号：US07417832B1
公开(公告)日：2008-08-26
申请号：US11114255
申请日：2005-04-26
申请人： Dustin W. Erickson , Chang-Man Park , Shin Funada , Lena Miloslavsky
发明人： Dustin W. Erickson , Chang-Man Park , Shin Funada , Lena Miloslavsky
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/32 , H01F41/325 , H01L43/08
摘要： A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a filter layer, a specular layer, a barrier layer, and a capping layer. The nonmagnetic spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the filter layer and the nonmagnetic spacer layer. The specular layer includes a first material and is electrically insulating. The barrier layer resides between the specular oxide layer and the capping layer. The barrier layer is nonmagnetic and includes a second material different material from the first material. The capping layer includes a third material different from the second material.
摘要翻译：公开了一种用于提供磁阻结构的方法和系统。磁阻结构包括钉扎层，非磁性间隔层，自由层，过滤层，镜面层，阻挡层和覆盖层。非磁性间隔层位于被钉扎层和自由层之间。自由层是导电的并且位于过滤层和非磁性间隔层之间。镜面层包括第一材料并且是电绝缘的。阻挡层位于镜面氧化物层和覆盖层之间。阻挡层是非磁性的并且包括与第一材料不同的材料的第二材料。封盖层包括与第二材料不同的第三材料。

7. 发明授权

US07318947B1 Method and apparatus for controlling magnetostriction in a spin valve sensor 失效
标题翻译：用于控制自旋阀传感器中的磁致伸缩的方法和装置
公开(公告)号：US07318947B1
公开(公告)日：2008-01-15
申请号：US10931622
申请日：2004-08-31
申请人： Chang-Man Park , Shin Funada , Amritpal S. Rana , Daniel E. Scott
发明人： Chang-Man Park , Shin Funada , Amritpal S. Rana , Daniel E. Scott
IPC分类号： B05D5/12
CPC分类号： G01R33/09 , B82Y25/00 , B82Y40/00 , G01R33/18 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/12 , Y10T29/49067
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, fabricating a metallic spacer layer and oxidizing a portion of the spacer layer in an environment including at least oxygen and a gas inert with respect to the spacer layer to provide an oxide layer. The method and system also include creating a free layer. The oxide layer is between a remaining metallic portion of the spacer layer and the free layer. In one aspect, the system includes a chamber and a gas diffusion apparatus within the chamber. The gas diffusion apparatus includes a plurality of nozzles and defines a plane. The gas exits each of the plurality of nozzles in a cone having an apex angle. The nozzles are directed at a nozzle tilt angle of at least half of the apex angle from the plane and the spacer layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供被钉扎层，制造金属间隔层并在包括至少氧和相对于间隔层惰性的气体的环境中氧化间隔层的一部分以提供氧化物层。该方法和系统还包括创建一个自由层。氧化物层位于间隔层的剩余金属部分和自由层之间。在一个方面，该系统包括室内的气体扩散装置。气体扩散装置包括多个喷嘴并限定一个平面。气体以具有顶角的锥体离开多个喷嘴中的每一个。喷嘴以与顶板和间隔层的顶角的至少一半的喷嘴倾斜角度定向。

8. 发明授权

US07307818B1 Method and system for providing a stable spin filter 失效
标题翻译：提供稳定的自旋过滤器的方法和系统
公开(公告)号：US07307818B1
公开(公告)日：2007-12-11
申请号：US10837381
申请日：2004-04-30
申请人： Chang-Man Park , Shin Funada , Amritpal S. Rana , Lena Miloslavsky
发明人： Chang-Man Park , Shin Funada , Amritpal S. Rana , Lena Miloslavsky
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/3272 , H01F10/3295 , H01F41/32 , H01F41/325 , H01L43/08
摘要： A method and system for providing a spin filter is disclosed. The method and system include providing a pinned layer, a free layer, and a conductive nonmagnetic spacer layer between the pinned layer and the free layer. The method and system also include providing a spin filter layer and a capping layer on the spin filter layer. The spin filter layer is adjacent to the free layer. The spin filter layer is on an opposite side of the free layer as the nonmagnetic spacer layer and includes at least Pt and/or Rh. The capping layer has a specular reflection layer therein. In one aspect, the specular reflection layer allows specular reflection of current carriers traveling from the spin filter layer to the specular reflection layer. In another aspect, the specular reflection layer includes at least Ta, Ti, Zr, Hf, Nb, Al, Mo, W, Si, Cr, V, Ni, Co, and Fe.
摘要翻译：公开了一种用于提供自旋过滤器的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和导电非磁性间隔层。该方法和系统还包括在自旋过滤层上提供自旋过滤层和覆盖层。自旋过滤层与自由层相邻。自旋过滤层位于自由层的与非磁性间隔层相反的一侧，并且至少包括Pt和/或Rh。盖层在其中具有镜面反射层。在一个方面，镜面反射层允许从自旋过滤层行进到镜面反射层的电流载流子的镜面反射。另一方面，镜面反射层至少包括Ta，Ti，Zr，Hf，Nb，Al，Mo，W，Si，Cr，V，Ni，Co和Fe。

9. 发明授权

US5529854A Magneto-optic recording systems 失效
标题翻译：磁光记录系统
公开(公告)号：US5529854A
公开(公告)日：1996-06-25
申请号：US231866
申请日：1994-04-25
申请人： Tatsuya Shimoda , Satoshi Shimokawato , Shin Funada , Mamoru Sugimoto , Akira Aoyama , Satoshi Nebashi
发明人： Tatsuya Shimoda , Satoshi Shimokawato , Shin Funada , Mamoru Sugimoto , Akira Aoyama , Satoshi Nebashi
IPC分类号： G11B11/105 , G11B5/66 , C23C14/00 , G11B11/00 , G11C13/06
CPC分类号： G11B11/10582 , G11B11/10586 , Y10S428/90
摘要： A magnetic recording film and a magneto-optic recording system utilizing films. The film includes light and heavy rare earth elements and transition metal elements. The system can include dielectric layers and low magnetic coercivity layers in addition to the recording layer.
摘要翻译：磁记录膜和利用膜的磁光记录系统。该薄膜包括轻和重稀土元素和过渡金属元素。该系统除了记录层之外还可以包括电介质层和低磁矫顽力层。

10. 发明申请

US20120156390A1 MULTI-ANGLE HARD BIAS DEPOSITION FOR OPTIMAL HARD-BIAS DEPOSITION IN A MAGNETIC SENSOR 审中-公开
标题翻译：用于磁传感器中最佳硬度偏移的多角度硬偏置沉积
公开(公告)号：US20120156390A1
公开(公告)日：2012-06-21
申请号：US12975084
申请日：2010-12-21
申请人： Satoru Araki , Shin Funada , Insik Jin , Quang Le , Simon H. Liao , Chang-Man Park
发明人： Satoru Araki , Shin Funada , Insik Jin , Quang Le , Simon H. Liao , Chang-Man Park
IPC分类号： B05D3/06 , B05D3/10 , B05D5/00
CPC分类号： G01R33/098 , B82Y40/00 , G11B5/3163 , G11B5/3932 , G11B5/398 , H01F10/123 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A method for manufacturing a magnetic sensor that result in improved magnetic bias field to the sensor, improved shield to hard bias spacing and a flatter top shield profile. The method includes a multi-angled deposition of the hard bias structure. After forming the sensor stack a first hard bias layer is deposited at an angle of about 70 degrees relative to horizontal. This is a conformal deposition. Then, a second deposition is performed at an angle of about 90 degrees relative to horizontal. This is a notching deposition, that results in notches being formed adjacent to the sensor stack. Then, a hard bias capping layer is deposited at an angle of about 55 degrees relative to horizontal. This is a leveling deposition that further flattens the surface on which the top shield can be electroplated.
摘要翻译：一种用于制造磁传感器的方法，其导致对传感器的改善的磁偏置场，改善了对硬偏置间隔的屏蔽和较平坦的顶部屏蔽轮廓。该方法包括硬偏置结构的多角度沉积。在形成传感器堆叠之后，第一硬偏压层以相对于水平面约70度的角度沉积。这是一个保形沉积。然后，以相对于水平方向大约90度的角度执行第二沉积。这是一种凹陷沉积，导致在传感器堆叠附近形成凹口。然后，相对于水平度以大约55度的角度沉积硬偏压盖层。这是一种平整沉积物，其进一步平坦化可以电镀顶部屏蔽的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式