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    • 4. 发明授权
    • Tailoring piezoelectric properties using MgxZn1-xO/ZnO material and MgxZn1-xO/ZnO structures
    • 使用MgxZn1-xO / ZnO材料和MgxZn1-xO / ZnO结构调整压电性能
    • US06716479B2
    • 2004-04-06
    • US10266130
    • 2002-10-07
    • Yicheng LuNuri William Emanetoglu
    • Yicheng LuNuri William Emanetoglu
    • B05D512
    • C30B29/22C23C16/40C30B25/02C30B29/16H01L41/187
    • The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.
    • 本发明提供了通过使ZnO和MgO合金形成的作为新的压电材料的氧化镁锌(Mg x Zn 1-x O)。 MgxZn1-xO允许薄膜SAW和BAW器件设计的灵活性,因为其压电性能可以通过控制Mg含量以及通过使用MgxZn1-xO / ZnO多层结构来定制。 为了进行实验证明,通过金属有机化学气相沉积,MgXZn1-xO(x <= 0.35)薄膜通过在450℃-500℃范围内的温度在r面蓝宝石衬底上生长。 Mg摩尔%至0.35的MgxZn1-xO薄膜具有外延质量和纤锌矿晶体结构。 SAW特性,包括速度色散和压电耦合,其特征和结论是声速增加,而压电耦合随压电MgxZn1-xO薄膜中Mg摩尔百分数的增加而减小。
    • 5. 发明授权
    • Zinc oxide nanotip and fabricating method thereof
    • 氧化锌纳米尖端及其制造方法
    • US06979489B2
    • 2005-12-27
    • US10243269
    • 2002-09-13
    • Yicheng LuSriram MuthukumarNuri William Emanetoglu
    • Yicheng LuSriram MuthukumarNuri William Emanetoglu
    • C30B25/02H01J1/304H01J9/02B32B15/00B32B9/04B32B3/00
    • B82Y30/00B82Y15/00C30B25/02C30B29/16C30B29/60H01J1/3044H01J9/025H01J2201/30446Y10S977/811Y10T428/24802Y10T428/24917
    • In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01{overscore (1)}2) Al2O3 substrates as long as the ZnO grows in a columnar stucture along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.
    • 在本发明中,提供了通过金属有机化学气相沉积(MOCVD)在各种基底上在较低温度下生长的自组装ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成,使ZnO比其他宽带隙半导体(如GaN和SiC)具有独特的优势。 纳米片具有均匀的尺寸,分布和取向。 这些ZnO纳米芯片具有单晶质量,显示n型导电性,并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石(SOS)上的图案化(100)硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由R平面上沉积的半导体,绝缘体或金属制成的图案化的层或岛上(01(过滤(12)Al 2 O 2 只要ZnO沿着这些材料上的ZnO的c轴[0001]在柱状结构中生长,这些自组装的ZnO纳米尖端和纳米尖端阵列对于在场发射显示器和电子发射中的应用是有希望的 光源带隙器件,近场显微镜,紫外光电子学和生物化学传感器。
    • 7. 发明授权
    • Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films
    • 具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
    • US07400030B2
    • 2008-07-15
    • US11042533
    • 2005-01-25
    • Yicheng LuHaifeng ShengSriram MuthukumarNuri William EmanetogluJian ZhongShaohua Liang
    • Yicheng LuHaifeng ShengSriram MuthukumarNuri William EmanetogluJian ZhongShaohua Liang
    • H01L29/04
    • H01L31/0392H01L31/022408H01L31/108H01L31/1123Y02E10/50
    • In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
    • 在本发明中,提供了半导体器件,例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上,肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案,其中内圆是肖特基接触,外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造,而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比,这些检测器显示低频光响应,高速光响应,较低的漏电流和低噪声性能。 本发明还可应用于光学调制器,金属半导体场效应晶体管(MESFET)等。