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1. 发明授权

US09276131B2 Stress release structures for metal electrodes of semiconductor devices 有权
标题翻译：半导体器件金属电极的应力释放结构
公开(公告)号：US09276131B2
公开(公告)日：2016-03-01
申请号：US13986500
申请日：2013-05-10
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/788 , H01L29/737
CPC分类号： H01L29/788 , H01L29/66234 , H01L29/66242 , H01L29/7371 , H01L29/778 , H01L2924/1305 , H01L2924/13051
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.
摘要翻译：本发明教导了在场效应晶体管中用于栅极，漏极和源极的应力释放金属电极，以及在双极晶体管中用于发射极，基极和集电极的应力释放金属电极。由于半导体材料和金属电极之间的热膨胀系数的差异很大，在制造和操作期间可能会在器件中引起显着的应变和应力。本发明提供具有应力释放结构的金属电极，以减少这些装置中的应变和应力。

2. 发明申请

US20140332854A1 Stress release structures for metal electrodes of semiconductor devices 审中-公开
标题翻译：半导体器件金属电极的应力释放结构
公开(公告)号：US20140332854A1
公开(公告)日：2014-11-13
申请号：US13986500
申请日：2013-05-10
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/737
CPC分类号： H01L29/788 , H01L29/66234 , H01L29/66242 , H01L29/7371 , H01L29/778 , H01L2924/1305 , H01L2924/13051
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.
摘要翻译：本发明教导了在场效应晶体管中用于栅极，漏极和源极的应力释放金属电极，以及在双极晶体管中用于发射极，基极和集电极的应力释放金属电极。由于半导体材料和金属电极之间的热膨胀系数的差异很大，在制造和操作期间可能会在器件中引起显着的应变和应力。本发明提供具有应力释放结构的金属电极，以减少这些装置中的应变和应力。

3. 发明申请

US20110291159A1 Stress release structures for metal electrodes of semiconductor devices 有权
标题翻译：半导体器件金属电极的应力释放结构
公开(公告)号：US20110291159A1
公开(公告)日：2011-12-01
申请号：US12802152
申请日：2010-06-01
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/778 , H01L29/737
CPC分类号： H01L29/2003 , H01L29/0603 , H01L29/0653 , H01L29/0817 , H01L29/0821 , H01L29/0843 , H01L29/1004 , H01L29/42316 , H01L29/42372 , H01L29/7371 , H01L29/7787
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.
摘要翻译：本发明教导了在场效应晶体管中用于栅极，漏极和源极的应力释放金属电极，以及在双极晶体管中用于发射极，基极和集电极的应力释放金属电极。由于半导体材料和金属电极之间的热膨胀系数的差异很大，在制造和操作期间可能会在器件中引起显着的应变和应力。本发明提供具有应力释放结构的金属电极，以减少这些装置中的应变和应力。

4. 发明申请

US20160005771A1 Millimetre wave integrated circuits with thin film transistors 审中-公开
公开(公告)号：US20160005771A1
公开(公告)日：2016-01-07
申请号：US14756093
申请日：2015-08-03
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L27/12 , H01L49/02 , H01L29/24 , H01L21/4763 , H01L21/02 , H01L29/66 , H01L21/4757
CPC分类号： H01L27/1259 , H01L21/02565 , H01L21/47573 , H01L21/47635 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/20 , H01L28/40 , H01L29/24 , H01L29/42384 , H01L29/66969
摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

5. 发明授权

US08759877B2 Stress release structures for metal electrodes of semiconductor devices 有权
公开(公告)号：US08759877B2
公开(公告)日：2014-06-24
申请号：US12802152
申请日：2010-06-01
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/20 , H01L29/778
CPC分类号： H01L29/2003 , H01L29/0603 , H01L29/0653 , H01L29/0817 , H01L29/0821 , H01L29/0843 , H01L29/1004 , H01L29/42316 , H01L29/42372 , H01L29/7371 , H01L29/7787
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.

6. 发明授权

US07211825B2 Indium oxide-based thin film transistors and circuits 有权
标题翻译：氧化铟基薄膜晶体管和电路
公开(公告)号：US07211825B2
公开(公告)日：2007-05-01
申请号：US10866267
申请日：2004-06-14
申请人： Yi-Chi Shih , Cindy Xing Qiu , Ishiang Shih , Chunong Qiu
发明人： Yi-Chi Shih , Cindy Xing Qiu , Ishiang Shih , Chunong Qiu
IPC分类号： H01L29/04 , H01L29/15 , H01L29/10 , H01L31/00 , H01L31/036
CPC分类号： H01L29/7869 , H01L29/78633 , H01L29/78645 , H01L29/78648
摘要： In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
摘要翻译：在电子显示器或成像单元中，通过晶体管阵列来实现像素的控制。这些晶体管是薄膜形式并且被布置成二维配置以形成开关电路，驱动电路或甚至读出电路。在本发明中，提供了具有氧化铟基沟道层的薄膜晶体管和电路。这些薄膜晶体管和电路可以在各种基板上的低温下制造，并具有高电荷载流子迁移率。除了传统的刚性衬底之外，本发明的薄膜晶体管和电路特别适用于用于电子显示和成像应用的柔性和透明衬底上的制造。提供了制造具有基于氧化铟的通道的薄膜晶体管的方法。

7. 发明授权

US07277065B2 Tunable photonic band gap structures for microwave signals 有权
标题翻译：微波信号的可调光子带隙结构
公开(公告)号：US07277065B2
公开(公告)日：2007-10-02
申请号：US10652460
申请日：2003-09-02
申请人： Jay Hsing Wu , Chunong Qiu , Cindy Xing Qiu , Ishiang Shih
发明人： Jay Hsing Wu , Chunong Qiu , Cindy Xing Qiu , Ishiang Shih
IPC分类号： H01Q15/02
CPC分类号： H01P1/2039 , H01P1/2005
摘要： Photonic Band Gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals because they have the ability to produce a bandstop effect at certain frequency range depending on the structural dimensions. The unique property of PBG structures is due to the periodic change of the dielectric permittivity so interferences are created with the traveling electromagnetic waves. Such periodic arrangement could exist either inside of the dielectric substrate or in the ground plane of a microstrip transmission line structure. This invention provides tunable or switchable planar PBG structures, which contains lattice pattern of periodic perforations inside of the ground plane. The tuning or switching of the bandstop characteristics is achieved by depositing a conducting island surrounded by a layer of controllable thin film with variable conductivities. The controllable thin film layer could be photoconductive or temperature sensitive that allows change in its conductivity to occur by means of light illumination or temperature variation. Instead of depositing the controllable thin film with variable conductivity, freestanding thin film such as MEMS structures can also be utilized as the medium between the conducting islands and the ground plane. According to this invention, bandstop characteristics of the planar PBG structure are switched off when the controllable thin film is conductive or the freestanding thin film is in contact with the conducting islands and the ground plane. Meanwhile the bandstop characteristics are switched on when the controllable thin film is resistive or the freestanding thin film is not in contact with the conducting islands. At the end, switching uniplanar-compact PBG (UC-PBG) structures with photoconductive or temperature sensitive material, which is deposited inside of the gaps located in the ground plane, is also described.
摘要翻译：光子带隙（PBG）结构用于微波部件作为滤波器以抑制不期望的信号，因为它们具有根据结构尺寸在特定频率范围产生带阻效应的能力。 PBG结构的独特性质是由于介电常数的周期性变化，因此随行进电磁波产生干扰。这种周期性布置可以存在于电介质基板的内部或微带传输线结构的接地平面内。本发明提供了可调谐或可切换的平面PBG结构，其包含接地平面内的周期性穿孔的格子图案。通过沉积由具有可变电导率的可控薄膜层包围的导电岛来实现带阻特性的调谐或切换。可控薄膜层可以是光导或温度敏感的，其允许通过光照或温度变化发生其导电性的变化。代替沉积具有可变电导率的可控薄膜，也可以使用诸如MEMS结构的独立薄膜作为导电岛和接地平面之间的介质。根据本发明，当可控薄膜导电或独立薄膜与导电岛和接地平面接触时，平面PBG结构的阻带特性被切断。同时，当可控薄膜是电阻性的或独立的薄膜不与导电岛接触时，阻带特性被接通。最后，还介绍了沉积在位于接地平面中的间隙内的光导或温敏材料的开关单面紧凑型PBG（UC-PBG）结构。

8. 发明授权

US06949985B2 Electrostatically actuated microwave MEMS switch 失效
公开(公告)号：US06949985B2
公开(公告)日：2005-09-27
申请号：US10629162
申请日：2003-07-30
申请人： Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01P1/12 , H01P1/10 , H01P5/12
CPC分类号： H01P1/127
摘要： As the basic building block of microwave and millimeter wave units and circuits, the microwave switch must fulfill several requirements including low insertion loss, high isolation and small dimensions. For conventional electrostatically actuated microwave MEMS switches, the isolation between DC and RF is achieved using an RF choke. In this invention, a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines on a first substrate and act as the actuation electrodes is provided. The resistive lines as the actuation electrodes according to this invention allows one to minimize the switch dimensions, to facilitate the integration and minimize the interference of the propagating microwave or millimeter wave signals. Another feature of this invention is a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines as actuation electrodes on a first substrate, and a third resistive line on a second substrate for the de-actuation of the cantilever.

9. 发明授权

US06891191B2 Organic semiconductor devices and methods of fabrication 失效
标题翻译：有机半导体器件及其制造方法
公开(公告)号：US06891191B2
公开(公告)日：2005-05-10
申请号：US10652959
申请日：2003-09-02
申请人： Steven Xiao , Chunong Qiu , Cindy Xing Qiu
发明人： Steven Xiao , Chunong Qiu , Cindy Xing Qiu
IPC分类号： H01L35/24 , H01L51/00 , H01L51/30
CPC分类号： H01L51/0575 , H01L51/0037 , H01L51/0038 , H01L51/4246 , Y02E10/549
摘要： The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directions.The present invention also provides methods for constructing the device structures. The main steps include 1) assembling a porous structure or a framework with semiconductor materials of one conduction type on a first electrode, 2) filling pores or coating the framework made from the materials in step 1 with semiconductors or precursors of conducting polymer of a opposite conduction type, 3) chemically and physically treating the system to form closed packed multi-PN channels.
摘要翻译：本发明公开了一种具有多PN通道的垂直结结构，其提供p型和n型材料之间的最大界面，以协助电荷分离，并且在p型和n型材料中提供连续相电荷运输在相反的方向。本发明还提供了构造装置结构的方法。主要步骤包括：1）在第一电极上组装一种导电类型的半导体材料的多孔结构或框架，2）用步骤1中的材料填充孔或涂覆由该材料制成的框架，导电类型，3）化学和物理处理系统以形成封闭多PN通道。

10. 发明授权

US06949403B2 Non-vacuum methods for the fabrication of organic semiconductor devices 失效
公开(公告)号：US06949403B2
公开(公告)日：2005-09-27
申请号：US10624003
申请日：2003-07-22
申请人： Steven Shuyong Xiao , Chunong Qiu , Cindy Xing Qiu
发明人： Steven Shuyong Xiao , Chunong Qiu , Cindy Xing Qiu
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0021 , H01L51/0006 , H01L51/0022 , H01L51/0024 , H01L51/0037 , H01L51/0038 , H01L51/424 , H01L51/441 , H01L51/442 , H01L51/5203 , Y02E10/549
摘要： This invention discloses methods for the fabrication of organic semiconductor material-based devices under non-vacuum environment. In one embodiment, electrodes are formed by electrodeposition from an electrolyte containing ions or complexes of the electrode materials to be deposited. In another embodiment, electrodes are formed by solution processing from a solution (or ink) containing nano-particle of the electrode materials or the precursor of electrode materials to be deposited. In addition, two different modes, either layer by layer or layer to layer, are disclosed for the fabrication of organic semiconductor material-based devices, wherein all semiconductor organic materials required by the function of the desired device are deposited under an non-vacuum environment.

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