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    • 6. 发明授权
    • Indium oxide-based thin film transistors and circuits
    • 氧化铟基薄膜晶体管和电路
    • US07211825B2
    • 2007-05-01
    • US10866267
    • 2004-06-14
    • Yi-Chi ShihCindy Xing QiuIshiang ShihChunong Qiu
    • Yi-Chi ShihCindy Xing QiuIshiang ShihChunong Qiu
    • H01L29/04H01L29/15H01L29/10H01L31/00H01L31/036
    • H01L29/7869H01L29/78633H01L29/78645H01L29/78648
    • In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
    • 在电子显示器或成像单元中,通过晶体管阵列来实现像素的控制。 这些晶体管是薄膜形式并且被布置成二维配置以形成开关电路,驱动电路或甚至读出电路。 在本发明中,提供了具有氧化铟基沟道层的薄膜晶体管和电路。 这些薄膜晶体管和电路可以在各种基板上的低温下制造,并具有高电荷载流子迁移率。 除了传统的刚性衬底之外,本发明的薄膜晶体管和电路特别适用于用于电子显示和成像应用的柔性和透明衬底上的制造。 提供了制造具有基于氧化铟的通道的薄膜晶体管的方法。
    • 7. 发明授权
    • Tunable photonic band gap structures for microwave signals
    • 微波信号的可调光子带隙结构
    • US07277065B2
    • 2007-10-02
    • US10652460
    • 2003-09-02
    • Jay Hsing WuChunong QiuCindy Xing QiuIshiang Shih
    • Jay Hsing WuChunong QiuCindy Xing QiuIshiang Shih
    • H01Q15/02
    • H01P1/2039H01P1/2005
    • Photonic Band Gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals because they have the ability to produce a bandstop effect at certain frequency range depending on the structural dimensions. The unique property of PBG structures is due to the periodic change of the dielectric permittivity so interferences are created with the traveling electromagnetic waves. Such periodic arrangement could exist either inside of the dielectric substrate or in the ground plane of a microstrip transmission line structure. This invention provides tunable or switchable planar PBG structures, which contains lattice pattern of periodic perforations inside of the ground plane. The tuning or switching of the bandstop characteristics is achieved by depositing a conducting island surrounded by a layer of controllable thin film with variable conductivities. The controllable thin film layer could be photoconductive or temperature sensitive that allows change in its conductivity to occur by means of light illumination or temperature variation. Instead of depositing the controllable thin film with variable conductivity, freestanding thin film such as MEMS structures can also be utilized as the medium between the conducting islands and the ground plane. According to this invention, bandstop characteristics of the planar PBG structure are switched off when the controllable thin film is conductive or the freestanding thin film is in contact with the conducting islands and the ground plane. Meanwhile the bandstop characteristics are switched on when the controllable thin film is resistive or the freestanding thin film is not in contact with the conducting islands. At the end, switching uniplanar-compact PBG (UC-PBG) structures with photoconductive or temperature sensitive material, which is deposited inside of the gaps located in the ground plane, is also described.
    • 光子带隙(PBG)结构用于微波部件作为滤波器以抑制不期望的信号,因为它们具有根据结构尺寸在特定频率范围产生带阻效应的能力。 PBG结构的独特性质是由于介电常数的周期性变化,因此随行进电磁波产生干扰。 这种周期性布置可以存在于电介质基板的内部或微带传输线结构的接地平面内。 本发明提供了可调谐或可切换的平面PBG结构,其包含接地平面内的周期性穿孔的格子图案。 通过沉积由具有可变电导率的可控薄膜层包围的导电岛来实现带阻特性的调谐或切换。 可控薄膜层可以是光导或温度敏感的,其允许通过光照或温度变化发生其导电性的变化。 代替沉积具有可变电导率的可控薄膜,也可以使用诸如MEMS结构的独立薄膜作为导电岛和接地平面之间的介质。 根据本发明,当可控薄膜导电或独立薄膜与导电岛和接地平面接触时,平面PBG结构的阻带特性被切断。 同时,当可控薄膜是电阻性的或独立的薄膜不与导电岛接触时,阻带特性被接通。 最后,还介绍了沉积在位于接地平面中的间隙内的光导或温敏材料的开关单面紧凑型PBG(UC-PBG)结构。