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1. 发明授权

US4789709A Process for the production of heat resistant thermoplastic copolymer 失效
标题翻译：生产耐热性热塑性共聚物的方法
公开(公告)号：US4789709A
公开(公告)日：1988-12-06
申请号：US924752
申请日：1986-10-30
申请人： Yasuyuki Kato , Masahiro Yuyama , Masahiko Moritani , Hideaki Matsuura , Susumu Iijima , Tsuyoshi Hashimoto
发明人： Yasuyuki Kato , Masahiro Yuyama , Masahiko Moritani , Hideaki Matsuura , Susumu Iijima , Tsuyoshi Hashimoto
IPC分类号： C08F8/48
CPC分类号： C08F8/48
摘要： A process for the production of a thermoplastic copolymer having excellent heat distortion resistance is disclosed. The process includes heat-treating a raw copolymer comprising a vinyl monomer unit including methacrylic and/or acrylic acid units in the presence of a specific ring-closing promoter selected from basic compounds, whereby the methacrylic and/or acrylic acid unit is converted into six-membered cyclic anhydride unit. The copolymer has excellent heat distortion resistance, transparency, mechanical properties and processability, and can produce a formed product without splash on the surface. The copolymer is useful for the production of various parts, such as automobile parts, electrical parts, industrial parts, and miscellaneous goods.
摘要翻译：公开了一种制造具有优异耐热变形性的热塑性共聚物的方法。该方法包括在选自碱性化合物的特定闭环促进剂存在下热处理包含乙烯基单体单元（包括甲基丙烯酸和/或丙烯酸单元）的原料共聚物，由此将甲基丙烯酸和/或丙烯酸单元转化为六环状酸酐单元。该共聚物具有优异的耐热变形性，透明性，机械性能和加工性，并且可以在表面上产生无飞溅的成形产品。该共聚物可用于生产汽车部件，电气部件，工业部件和杂项等各种部件。

2. 发明申请

US20050136657A1 Film-formation method for semiconductor process 审中-公开
标题翻译：半导体工艺的成膜方法
公开(公告)号：US20050136657A1
公开(公告)日：2005-06-23
申请号：US11033406
申请日：2005-01-12
申请人： Hiroaki Yokoi , Tetsu Zenko , Hiroaki Ashizawa , Tsuyoshi Hashimoto
发明人： Hiroaki Yokoi , Tetsu Zenko , Hiroaki Ashizawa , Tsuyoshi Hashimoto
IPC分类号： C23C16/34 , C23C16/44 , H01L21/44
CPC分类号： C23C16/34 , C23C16/4404
摘要： A film-formation method for a semiconductor process includes pre-coating of covering a worktable with a pre-coat before loading a target substrate into a process chamber, and film formation thereafter of loading the target substrate into the process chamber, and forming a main film on the target substrate. The pre-coating repeats the first and second steps a plurality of times, thereby laminating segment films to form the pre-coat. The first step supplies first and second process gases into the process chamber, thereby forming a segment film containing a metal element on the worktable. The second step supplies the second process gas containing no metal element into the process chamber, thereby exhausting and removing, from the process chamber, a byproduct produced in the first step other than a component forming the segment film.
摘要翻译：半导体工艺的成膜方法包括在将目标衬底加载到处理室中之前用预涂层覆盖工作台，以及之后将目标衬底装载到处理室中的膜形成，以及形成主体目标底物上的胶片。预涂层重复第一和第二步骤多次，从而层压段膜以形成预涂层。第一步骤将第一和第二工艺气体供应到处理室中，从而在工作台上形成含有金属元素的分段薄膜。第二步骤将不含金属元素的第二工艺气体供应到处理室中，从而从处理室排出除去除了形成段膜的部件之外的第一步骤中产生的副产物。

3. 发明授权

US6022586A Method and apparatus for forming laminated thin films or layers 失效
标题翻译：用于形成叠层薄膜或层的方法和装置
公开(公告)号：US6022586A
公开(公告)日：2000-02-08
申请号：US28645
申请日：1998-02-24
申请人： Tsuyoshi Hashimoto , Kimihiro Matsuse , Kazuya Okubo , Tsuyoshi Takahashi
发明人： Tsuyoshi Hashimoto , Kimihiro Matsuse , Kazuya Okubo , Tsuyoshi Takahashi
IPC分类号： H01L21/28 , C23C16/44 , C23C16/455 , H01L21/205 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , C23C16/42
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , C23C16/45561
摘要： Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.
摘要翻译：在预处理中，通过将第一成膜气体提供到处理容器的处理室中，同时加热处理室以在暴露于该处理容器的处理容器的内表面上形成第一预涂膜，从而在预处理中形成预涂膜处理室，然后将第二成膜气体供应到处理室中，以在第一预涂膜上形成第二预涂膜。将半导体晶片装载到处理室中。然后，在加热处理室的同时，将第一气体供给到处理室中，以在晶片上形成第一层，然后将第二气体供应到处理室中，以在第一层上形成第二层。将硅烷气体供应到处理室中以允许硅材料沉积在堆叠在第一层上的第二层的表面上。最后，将具有第一和第二多层膜的晶片从处理容器中卸载出来。

4. 发明授权

US5997651A Heat treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5997651A
公开(公告)日：1999-12-07
申请号：US729287
申请日：1996-10-10
申请人： Kimihiro Matsuse , Tsuyoshi Hashimoto , Mitsuhiro Tachibana
发明人： Kimihiro Matsuse , Tsuyoshi Hashimoto , Mitsuhiro Tachibana
IPC分类号： H01L21/285 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/205 , H01L21/26 , H01L21/31 , H01L21/683 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/481
摘要： A heat treatment apparatus includes a treatment container having a reaction chamber, and a gas chamber a mount table provided in the treatment container for mounting thereon a wafer such that an upper surface of the wafer is exposed to the reaction chamber, and an annular clamp member provided in the reaction chamber, movable between a clamp position in which it contacts the peripheral edge of the wafer in circular line contact and a waiting position in which it is separated from the wafer. The line contact prevents leakage of the process gas from the reaction chamber through a clearance between the clamp member and the wafer.
摘要翻译：热处理设备包括具有反应室的处理容器和设置在处理容器中的安装台的气室，用于将晶片的上表面暴露于反应室，并将环形夹紧构件设置在反应室中，可在其与圆形接触的晶片的周边边缘接触的夹持位置与其与晶片分离的等待位置之间移动。线接触防止工艺气体从夹紧构件和晶片之间的间隙从反应室泄漏。

5. 发明授权

US06404021B1 Laminated structure and a method of forming the same 失效
标题翻译：叠层结构及其形成方法
公开(公告)号：US06404021B1
公开(公告)日：2002-06-11
申请号：US09023712
申请日：1998-02-13
申请人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
发明人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
IPC分类号： H01L2976
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译：形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤，用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层。

6. 发明授权

US5290736A Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric 失效
标题翻译：在高于大气压的压力下使用臭氧和有机硅烷形成层间绝缘膜的方法
公开(公告)号：US5290736A
公开(公告)日：1994-03-01
申请号：US764901
申请日：1991-09-24
申请人： Nobuyoshi Sato , Kyoji Tokunaga , Tomoharu Katagiri , Tsuyoshi Hashimoto , Tomohiro Ohta
发明人： Nobuyoshi Sato , Kyoji Tokunaga , Tomoharu Katagiri , Tsuyoshi Hashimoto , Tomohiro Ohta
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02216 , H01L21/02271 , H01L21/31612 , Y10S148/118
摘要： A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O.sub.3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 350.degree. C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 atm to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatening process after the formation of the silicon oxide film can be made simpler.
摘要翻译：在半导体器件中用作层间绝缘膜的氧化硅膜通过高压有机硅烷-O 3 CVD形成。将半导体晶片放置在反应容器中并在350℃的温度下加热。将有机硅烷气体如TEOS，HMDS和OMCTS与臭氧气体的混合物引入反应容器中，并进行反应在高于大气压的压力下，优选在约2atm的压力下形成具有优异性能的氧化硅膜。用作氧化剂和/或催化剂的臭氧气体的寿命可以在高压下延长，因此氧化硅膜的沉积速率可以提高，并且可以提高氧化硅膜的平坦度。因此，可以有效地进行氧化硅膜形成工艺，并且可以使形成氧化硅膜之后的平坦化处理更简单。

7. 发明申请

US20100213176A1 SINKER ELECTRIC DISCHARGE MACHINING METHOD, AND SINKER ELECTRIC DISCHARGE MACHINING APPARATUS 有权
标题翻译： SINKER电动放电加工方法和SINKER电动放电加工设备
公开(公告)号：US20100213176A1
公开(公告)日：2010-08-26
申请号：US12672669
申请日：2008-08-07
申请人： Tomoyuki Yanagisawa , Tsuyoshi Hashimoto
发明人： Tomoyuki Yanagisawa , Tsuyoshi Hashimoto
IPC分类号： B23H1/02
CPC分类号： B23H1/022
摘要： A sinker electric discharge machining apparatus for machining a workpiece by generating electric discharge in a work gap by applying a voltage having an OFF time, may include a discriminator for generating a first signal representing an abnormal state of the work gap, and a second signal representing a normal state of the work gap; and a pulse controller, in which a first extension factor and a second extension factor that is smaller than the first extension factor are set and a first reduction factor and a second reduction factor that is smaller than the first reduction factor are set. The pulse controller extends the OFF time using either the first or the second extension factor if the first signal is received. The pulse controller reduces the OFF time using either the first or the second reduction factor if the second signal is received.
摘要翻译：一种用于通过施加具有OFF时间的电压在工作间隙中产生放电来加工工件的沉降片放电加工装置可以包括用于产生表示工作间隙的异常状态的第一信号的鉴别器，以及表示正常状态的工作差距; 以及脉冲控制器，其中设置小于第一扩展因子的第一扩展因子和第二扩展因子，并且设置小于第一缩减因子的第一缩减因子和第二缩减因子。如果接收到第一个信号，则脉冲控制器使用第一或第二扩展因子来延长断开时间。如果接收到第二个信号，则脉冲控制器使用第一或第二缩减因子来减少OFF时间。

8. 发明授权

US07720133B2 Wireless communication apparatus, wireless communication method, propagation measurement apparatus and propagation measurement method 有权
标题翻译：无线通信装置，无线通信方法，传播测量装置和传播测量方法
公开(公告)号：US07720133B2
公开(公告)日：2010-05-18
申请号：US11210864
申请日：2005-08-25
申请人： Akihiro Koyama , Akira Hayashi , Shinsuke Tashiro , Tsuyoshi Hashimoto , Masayuki Takada , Katsumi Watanabe
发明人： Akihiro Koyama , Akira Hayashi , Shinsuke Tashiro , Tsuyoshi Hashimoto , Masayuki Takada , Katsumi Watanabe
IPC分类号： H04B1/00 , H04B7/216
CPC分类号： H04B1/708 , H04B1/692 , H04B1/71637 , H04B1/7172 , H04B1/719 , H04B2201/70707
摘要： Disclosed is a wireless communication apparatus for receiving a code-spread transmission signal. The wireless communication apparatus includes: an RF section; and a baseband section, wherein, in the baseband section, despreaders of an integral submultiple, which is 1/n1, of the number of chips of a spread code are arranged in parallel, and there is provided a propagation measurement section that measures a propagation channel by using the plurality of despreaders a plurality of times in a time-division manner and performing despread of each period corresponding to a chip rate of the spread code.
摘要翻译：公开了一种用于接收码扩展传输信号的无线通信装置。无线通信装置包括：RF部分; 以及基带部分，其中在基带部分中并行布置扩展码的码片数量为1 / n1的整数倍的解扩器，并且设置有传播测量部分，其测量传播通过以时分方式多次使用多个解扩器，并对与扩展码的码片速率相对应的每个周期执行解扩。

9. 发明申请

US20050019737A1 Evaluation system, method and program for evaluating ability 审中-公开
标题翻译：评估体系，评价能力的方法和程序
公开(公告)号：US20050019737A1
公开(公告)日：2005-01-27
申请号：US10875589
申请日：2004-06-25
申请人： Hiroyuki Iida , Tsuyoshi Hashimoto
发明人： Hiroyuki Iida , Tsuyoshi Hashimoto
IPC分类号： G09B7/04 , G06Q50/00 , G06Q50/10 , G06Q50/20 , G09B5/08 , G09B7/00 , G09B3/00
CPC分类号： G09B7/00
摘要： An evaluation system for evaluating ability is provided. The system includes: a) storing part for storing a plurality of problem groups, which are rated as a plurality of ranks based on difficulty levels, with associated right answers therein; b) first presenting part for presenting two or more problems of the plurality of problem groups, which are rated as a first rank, in the storing part to a user; and c) determination part for receiving answers to said two or more problems presented, to determine whether or not said received answers are correct with reference to the right answers in the storing part, and to obtain a correct answer rate based on the determination result. The system further includes d) first control part for controlling said first presenting part to use a problem group which is rated as a second rank being higher than said first rank when said correct answer rate is greater than a first threshold; e) second control part for controlling said first presenting part to use a problem group which is rated as a third rank being lower than said first rank when said correct answer rate is less than a second threshold; f) third control part for controlling said first presenting part to use problem groups rated as a plurality of ranks by repeating the control operation in the first and/or second control part twice or more; and g) an ability evaluation part for evaluating ability of said user based on said correct answer rate, which are obtained by each rank of problem group by the determination part, of the received answers.
摘要翻译：提供评估能力评估系统。该系统包括：a）存储部分，用于存储根据难度等级被评为多个等级的多个问题组，其中具有相应的正确答案; b）首先呈现部分，用于在存储部分中向用户呈现被评为第一等级的多个问题组的两个或多个问题; 以及c）确定部分，用于接收所呈现的所述两个或多个问题的答案，以参考存储部分中的正确答案来确定所接收的答案是否正确，并且基于确定结果获得正确的答复率。该系统还包括：d）第一控制部分，用于控制所述第一呈现部分，以使用当所述正确答案率大于第一阈值时被评级为高于所述第一等级的第二等级的问题组; e）第二控制部分，用于当所述正确答案率小于第二阈值时，控制所述第一呈现部分使用被评定为第三等级的问题组低于所述第一等级; f）第三控制部分，用于通过在第一和/或第二控制部分中重复执行两次或更多次的控制操作来控制所述第一呈现部分以使用被评定为多个等级的问题组; 以及g）能力评估部分，用于根据由所述确定部分的每个问题组等级获得的所述正确答案率来评估所述用户的能力。

10. 发明授权

US06489208B2 Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon 失效
标题翻译：形成叠层结构以增强多晶硅上的金属硅化物附着力的方法
公开(公告)号：US06489208B2
公开(公告)日：2002-12-03
申请号：US10042148
申请日：2002-01-11
申请人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
发明人： Masato Koizumi , Kazuya Okubo , Tsuyoshi Takahashi , Tsuyoshi Hashimoto , Kimihiro Matsuse
IPC分类号： H01L2128
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译：形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 P型杂质，在栅极膜靶的表面上，保持成膜装置中的处理对象以防止在多晶硅层上形成氧化膜的步骤; 以及向所述成膜装置供给硅化钨成膜用处理气体和P型杂质的工序，在所述多晶硅层上形成掺杂有P型杂质的杂质的硅化钨层，不形成氧化膜。

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