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1. 发明授权

US08263174B2 Light emitting device and method for manufacturing light emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08263174B2
公开(公告)日：2012-09-11
申请号：US12304316
申请日：2007-06-13
申请人： Yasushi Yagi , Shingo Watanabe , Toshihisa Nozawa , Chuichi Kawamura , Kimihiko Yoshino , Tadahiro Ohmi
发明人： Yasushi Yagi , Shingo Watanabe , Toshihisa Nozawa , Chuichi Kawamura , Kimihiko Yoshino , Tadahiro Ohmi
IPC分类号： B05D5/06 , B05D5/12 , C23C16/00 , H01J9/00
CPC分类号： H01L51/001 , C23C14/12 , C23C14/28 , H01L51/56
摘要： Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.
摘要翻译：公开了一种发光器件制造设备，包括：多个处理室，用于执行用于在目标衬底上形成包括有机层的多层的发光器件的衬底处理，其中，所述多个处理室中的每一个被配置为在目标衬底上执行衬底处理，同时保持目标衬底，使得要在其上形成发光器件的器件形成表面朝向与重力方向相反的方向。

2. 发明申请

US20090156084A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE 有权
标题翻译：发光装置及制造发光装置的方法
公开(公告)号：US20090156084A1
公开(公告)日：2009-06-18
申请号：US12304316
申请日：2007-06-13
申请人： Yasushi Yagi , Shingo Watanabe , Toshihisa Nozawa , Chuichi Kawamura , Kimihiko Yoshino , Tadahiro Ohmi
发明人： Yasushi Yagi , Shingo Watanabe , Toshihisa Nozawa , Chuichi Kawamura , Kimihiko Yoshino , Tadahiro Ohmi
IPC分类号： H01J9/00 , H05B33/10
CPC分类号： H01L51/001 , C23C14/12 , C23C14/28 , H01L51/56
摘要： Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.
摘要翻译：公开了一种发光器件制造设备，包括：多个处理室，用于执行用于在目标衬底上形成包括有机层的多层的发光器件的衬底处理，其中，所述多个处理室中的每一个被配置为在目标衬底上执行衬底处理，同时保持目标衬底，使得要在其上形成发光器件的器件形成表面朝向与重力方向相反的方向。

3. 发明申请

US20090202708A1 Apparatus for Manufacturing Light Emitting Elements and Method of Manufacturing Light Emitting Elements 审中-公开
标题翻译：用于制造发光元件的装置和制造发光元件的方法
公开(公告)号：US20090202708A1
公开(公告)日：2009-08-13
申请号：US12304324
申请日：2007-06-13
申请人： Kazuki Moyama , Yasushi Yagi , Toshihisa Nozawa , Tadahiro Ohmi , Chuichi Kawamura , Kimihiko Yoshino
发明人： Kazuki Moyama , Yasushi Yagi , Toshihisa Nozawa , Tadahiro Ohmi , Chuichi Kawamura , Kimihiko Yoshino
IPC分类号： B05D5/06 , C23C16/54
CPC分类号： H01L51/001 , C23C14/12 , C23C14/28 , H01L51/0021 , H01L51/56
摘要： An apparatus of manufacturing a light emitting element having a plurality of layers including an organic layer on a substrate to be processed is disclosed. The apparatus includes a plurality of process chambers to which the substrate to be processed is transferred in series, wherein the plurality of process chambers are substantially linearly connected to one another and wherein adjacent two of the process chambers are filled with gas that does not react with a layer on the substrate to be processed when the substrate to be processed is transferred between the two process chambers.
摘要翻译：公开了一种制造发光元件的装置，该发光元件具有包括待处理衬底上的有机层的多个层。该设备包括多个处理室，待处理的基板被串联传送，其中多个处理室基本上彼此直线连接，并且其中相邻的两个处理室被不与当要处理的基板在两个处理室之间转移时，待处理的基板上的层。

4. 发明申请

US20090206728A1 LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：发光装置，制造发光装置的方法和基板处理装置
公开(公告)号：US20090206728A1
公开(公告)日：2009-08-20
申请号：US12279347
申请日：2007-02-13
申请人： Toshihisa Nozawa , Kazuki Moyama , Tadahiro Ohmi , Chuichi Kawamura , Kimihiko Yoshino
发明人： Toshihisa Nozawa , Kazuki Moyama , Tadahiro Ohmi , Chuichi Kawamura , Kimihiko Yoshino
IPC分类号： H01J1/62 , B29D11/00 , H01L21/306
CPC分类号： H01L51/0017 , H01L51/5012 , H01L51/56
摘要： A substrate process apparatus that forms a light emitting device configured with an organic layer including a light emitting layer on a substrate to be processed, the organic layer being formed between a first electrode and a second electrode, includes an organic layer forming apparatus wherein the organic layer is formed on the first electrode formed on the substrate to be processed; an electrode forming apparatus wherein the second electrode is formed on the organic layer; and an etching apparatus wherein the organic layer is etched.
摘要翻译：一种衬底处理装置，其形成配置有在被处理衬底上的发光层的有机层的发光器件，形成在第一电极和第二电极之间的有机层包括有机层形成装置，其中有机层在形成在待处理基板上的第一电极上形成层; 电极形成装置，其中第二电极形成在有机层上; 以及其中蚀刻有机层的蚀刻装置。

5. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

6. 发明申请

US20100216300A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100216300A1
公开(公告)日：2010-08-26
申请号：US12675289
申请日：2008-08-07
申请人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
发明人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
IPC分类号： H01L21/28
CPC分类号： H01L21/02164 , C23C16/511 , H01J37/32192 , H01L21/02274 , H01L21/31055 , H01L21/31116
摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.
摘要翻译：一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜半导体衬底的表面。

7. 发明申请

US20100178775A1 SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：与气体释放孔部件一体烧结的淋浴板及其制造方法
公开(公告)号：US20100178775A1
公开(公告)日：2010-07-15
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： H01L21/465 , C23C16/00 , C23C16/511 , H01L21/469 , C23F1/00 , C23F1/08 , C23C16/455 , B28B1/44
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

8. 发明申请

US20070137575A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070137575A1
公开(公告)日：2007-06-21
申请号：US10578184
申请日：2004-11-02
申请人： Tadahiro Ohmi , Toshihisa Nozawa , Osamu Morita , Tamaki Yuasa , Koji Kotani
发明人： Tadahiro Ohmi , Toshihisa Nozawa , Osamu Morita , Tamaki Yuasa , Koji Kotani
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32192 , C23C16/4411 , C23C16/45572 , C23C16/511 , H01J37/3244 , H01J37/32724
摘要： The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part. Therefore, used in the present invention is a plasma processor having a processing vessel having a holder holding a substrate to be processed, a microwave antenna provided on the processing vessel so as to oppose the substrate to be processed, and a processing gas supply part provided between the substrate to be processed on the holder and the microwave antenna so as to oppose the substrate to be processed, characterized in that the process gas supply part has multiple first openings through which plasma formed in the processing vessel passes, a process gas channel connectable to a process gas source, multiple second openings communicating with the process gas channel, and a cooling medium channel through which a cooling medium cooling the process gas supply part flows, wherein the cooling medium includes mist.
摘要翻译：本发明的目的是提高等离子体处理器的处理气体供给部的冷却效率，从而抑制处理气体供给部的温度上升。因此，本发明中使用的是具有处理容器的等离子体处理容器，该处理容器具有保持待处理基板的保持器，设置在处理容器上的与要处理的基板相对的微波天线，以及设置有处理气体供给部在待加工的基板与微波天线之间，以与待处理的基板相对，其特征在于，处理气体供给部具有多个第一开口，处理容器中形成的等离子体通过该第一开口，可连接的处理气体通道处理气体源，与处理气体通道连通的多个第二开口以及冷却介质通道，冷却介质冷却工艺气体供应部分，冷却介质包括雾。

9. 发明授权

US08497214B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08497214B2
公开(公告)日：2013-07-30
申请号：US12675289
申请日：2008-08-07
申请人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
发明人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
IPC分类号： H01L21/302
CPC分类号： H01L21/02164 , C23C16/511 , H01J37/32192 , H01L21/02274 , H01L21/31055 , H01L21/31116
摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.
摘要翻译：一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜半导体衬底的表面。

10. 发明申请

US20100055816A1 Light Emitting Device Manufacturing Apparatus and Method 审中-公开
标题翻译：发光装置制造装置及方法
公开(公告)号：US20100055816A1
公开(公告)日：2010-03-04
申请号：US12303568
申请日：2007-06-07
申请人： Toshihisa Nozawa , Yasushi Yagi
发明人： Toshihisa Nozawa , Yasushi Yagi
IPC分类号： H01L51/56 , C23C16/458 , C23C14/34 , C23F1/08
CPC分类号： C23C16/00 , C23C14/12 , C23C14/3464 , H01L51/56 , H05B33/10
摘要： A disclosed light-emitting-device manufacturing apparatus for manufacturing a light emitting device by forming, on an in-process substrate, an organic layer including an emitting layer includes multiple processing chambers to which the in-process substrate is sequentially transferred to be subjected to multiple substrate processing steps; and multiple substrate transfer chambers, each of which is connected to a different one of the processing chambers. A substrate holding container configured to contain the in-process substrate is sequentially connected to the substrate transfer chambers in order so that the in-process substrate is sequentially transferred to the processing chambers to be subjected to the substrate processing steps.
摘要翻译：所公开的用于通过在工艺衬底上形成包括发光层的有机层来制造发光器件的发光器件制造装置包括多个处理室，其中处理前衬底被依次转印到其上多个基板加工步骤; 以及多个衬底传送室，每个衬底传送室连接到不同的一个处理室。被配置为容纳处理前基板的基板保持容器依次连接到基板传送室，使得处理前基板被顺序地转移到处理室以进行基板处理步骤。

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