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1. 发明授权

US06892582B1 Semiconductor pressure sensor and pressure sensing device 失效
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US06892582B1
公开(公告)日：2005-05-17
申请号：US09936480
申请日：1999-08-20
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film.This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过CVD技术等沉积氧化硅膜，从而密封蚀刻通道。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

2. 发明授权

US06640642B1 Capacitance-type pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06640642B1
公开(公告)日：2003-11-04
申请号：US09653808
申请日：2000-09-01
申请人： Yasuo Onose , Atsuo Watanabe , Seiji Kuryu , Shinya Satou , Junichi Horie , Satoshi Shimada
发明人： Yasuo Onose , Atsuo Watanabe , Seiji Kuryu , Shinya Satou , Junichi Horie , Satoshi Shimada
IPC分类号： G01L912
CPC分类号： G01L9/0042 , G01L1/146 , G01L9/0073
摘要： A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.
摘要翻译：一种电容式压力传感器，其包括彼此并联连接的多个压力传感器单元，每个压力传感器单元通过电极形成在基板上，空腔区域和具有导电膜的隔膜，所述导电膜设置成与电极相对设置其中腔区插入在电极和隔膜之间，其中隔膜固定部分设置在空腔区域的内部，使得隔膜的单片分别地分区地分配到多个压力传感器单元的区域。利用电容型压力传感器的这种结构，电容检测的无效区域被最小化，因此可以随着传感器的检测精度提高而降低寄生电容。

3. 发明申请

US20050132814A1 Semiconductor pressure sensor and pressure sensing device 审中-公开
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US20050132814A1
公开(公告)日：2005-06-23
申请号：US11049872
申请日：2005-02-04
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, there by sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供了一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过密封蚀刻通道，通过CVD技术等沉积氧化硅膜。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

4. 发明授权

US06941815B2 Sensor with built-in circuits and pressure detector using the same 失效
标题翻译：传感器内置电路和压力检测器使用相同
公开(公告)号：US06941815B2
公开(公告)日：2005-09-13
申请号：US10173732
申请日：2002-06-19
申请人： Yasuo Onose , Junichi Horie , Seiji Kuryu , Akihiko Saito , Norio Ichikawa , Atsuo Watanabe , Satoshi Shimada
发明人： Yasuo Onose , Junichi Horie , Seiji Kuryu , Akihiko Saito , Norio Ichikawa , Atsuo Watanabe , Satoshi Shimada
IPC分类号： G01L9/00 , H01L29/84 , G01L9/04
CPC分类号： G01L9/0073 , G01L9/0042
摘要： A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.
摘要翻译：具有内置电路的传感器可以提高操作的稳定性或特性。电路区域和传感器区域被钝化膜覆盖。传感器区域被钝化膜部分覆盖。传感器区域和电路区域被钝化膜保护，并且可以减轻钝化膜对隔膜部分的机械位移的影响，使得具有内置电路的传感器可以在操作的稳定性方面得到改善，或者特点

5. 发明授权

US06377056B1 Electrostatic capacitance type dynamical quantity sensor 有权
标题翻译：静电电容型动力传感器
公开(公告)号：US06377056B1
公开(公告)日：2002-04-23
申请号：US09384289
申请日：1999-08-26
申请人： Keiji Hanzawa , Masahiro Matsumoto , Satoshi Shimada , Akihiko Saito , Yasuo Onose , Norio Ichikawa , Junichi Horie , Seiji Kuryu
发明人： Keiji Hanzawa , Masahiro Matsumoto , Satoshi Shimada , Akihiko Saito , Yasuo Onose , Norio Ichikawa , Junichi Horie , Seiji Kuryu
IPC分类号： G01R2726
CPC分类号： G01P15/125 , G01D5/24 , G01L9/0073 , G01L9/12
摘要： Dynamic quantitative displacement is converted stably and straight into voltage (D.C. output) by using a high speed detection driving frequency without restricting a response of an operational amplifier. When a dynamic quantity detection electrostatic capacitance changes according to a dynamic quantity, electric charges stored in this element and in a reference electrostatic capacitance become unbalanced to produce a difference value, and an output of an operational amplifier changes according to the difference in electric charge quantity. However, the output becomes finally stable when the electric charges in the dynamic quantity detection electrostatic capacitance and in the reference electrostatic capacitance become equal. The output is proportional to a reciprocal of the dynamic quantity detection electrostatic capacitance and it is a D.C. voltage. Further, output without depending on integration feedback capacitance (feedback condenser) CF can be obtained.
摘要翻译：通过使用高速检测驱动频率将动态定量位移稳定地转换成电压（直流输出），而不限制运算放大器的响应。当动态量检测静电电容根据动态量而变化时，存储在该元件中的电荷和参考静电电容变得不均衡以产生差值，并且运算放大器的输出根据电荷量的差异而变化。然而，当动态量检测静电电容和参考静电电容中的电荷变得相等时，输出最终稳定。输出与动态量检测静电电容的倒数成比例，为直流电压。此外，可以获得不依赖积分反馈电容（反馈电容器）CF的输出。

6. 发明授权

US06877383B2 Capacitive type pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06877383B2
公开(公告)日：2005-04-12
申请号：US10247637
申请日：2002-09-20
申请人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
发明人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
IPC分类号： G01L9/00 , G01L9/12
CPC分类号： G01L9/0073
摘要： By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 μm, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
摘要翻译：通过以较少的工艺密封隔膜，降低成本，减少由于剩余应力引起的变形，提出了一种稳定可靠的压力传感器结构。压力传感器测量误差小，浮动电容和漏电流小，特性好。作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜密封多晶硅隔膜，然后完全覆盖。隔膜被放置在半导体衬底的表面上，具有0.15-1.3μm的几乎恒定的间隙，并且由于剩余应力而具有变形减小装置的不同级别的构造。

7. 发明授权

US06167761A Capacitance type pressure sensor with capacitive elements actuated by a diaphragm 失效
标题翻译：电容型压力传感器，其电容元件由隔膜驱动
公开(公告)号：US06167761A
公开(公告)日：2001-01-02
申请号：US09103612
申请日：1998-06-24
申请人： Keiji Hanzawa , Akio Yasukawa , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Masahiro Matsumoto , Atsushi Miyazaki , Norio Ichikawa , Junichi Horie , Seiji Kuryu
发明人： Keiji Hanzawa , Akio Yasukawa , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Masahiro Matsumoto , Atsushi Miyazaki , Norio Ichikawa , Junichi Horie , Seiji Kuryu
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： In a capacitance type pressure sensor, a diaphragm is formed of a fragile material using an impurity-diffused monocrystal silicon and constitutes a stable pressure-responsive structure which does not undergo a plastic deformation. Between the diaphragm and a movable electrode is formed an oxide film to diminish stray capacitance between the movable electrode and a substrate and also between the movable electrode and a impurity-diffused layer. The oxide film and the movable electrode are each divided into plural regions so that the divided regions of the movable electrode are formed on the divided regions of the oxide film, thereby diminishing stress strain induced by a difference in therm expansion coefficient among the diaphragm, oxide film and movable electrode. The upper surface of a fixed electrode is covered with a structure for the fixed electrode which structure is formed by an insulating polycrystal silicon film not doped with impurity whereby the rigidity of the electrode is enhanced and it is possible to diminish a leak current.
摘要翻译：在电容式压力传感器中，使用杂质扩散的单晶硅由脆性材料形成隔膜，构成不发生塑性变形的稳定的压力响应结构。在隔膜和可动电极之间形成氧化膜，以减小可动电极和基板之间以及可移动电极和杂质扩散层之间的杂散电容。氧化物膜和可动电极分别分成多个区域，使得可动电极的分割区域形成在氧化膜的分割区域上，从而减小由隔膜，氧化物中的热膨胀系数差引起的应力应变薄膜和可动电极。固定电极的上表面被固定电极的结构覆盖，该结构由不掺杂杂质的绝缘多晶硅膜形成，由此电极的刚性增强并且可以减小漏电流。

8. 发明授权

US06564643B1 Capacitive pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06564643B1
公开(公告)日：2003-05-20
申请号：US09807325
申请日：2001-04-12
申请人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
发明人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.
摘要翻译：一种消除参考电容器和半导体衬底之间的寄生电容的高精度高稳定性电容式压力传感器。一种电容式压力传感器，包括在半导体衬底10上的电容随着周围压力变化而变化的有源电容器100，其电容量不会随周围压力变化而变化不大的参考电容器200以及电连接到所述有源和参考电容器100和200都检测其差异或比例，并且使用半导体衬底的电位，其中所述参考电容器的电极30a形成在半导体衬底10上，其间具有电介质20。

9. 发明授权

US07791097B2 Nitride semiconductor device and manufacturing method of the same 有权
标题翻译：氮化物半导体器件及其制造方法相同
公开(公告)号：US07791097B2
公开(公告)日：2010-09-07
申请号：US11772644
申请日：2007-07-02
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00
摘要： A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
摘要翻译：氮化物半导体器件包括其上形成有半导体器件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n型电极。在GaN衬底和n型电极之间插入表面改性层和反应层。表面改性层用作载体供给层，并且通过使GaN衬底的后表面与待改性的含Si等离子体反应而形成。反应层是通过清洗部分除去沉积在表面改性层上的沉积材料产生沉积层，然后使包含在第一金属层中的Ti和沉积层通过热处理部分地反应而产生的。

10. 发明申请

US20090253264A1 THIN FILM FORMATION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：薄膜形成方法和半导体器件的制造方法
公开(公告)号：US20090253264A1
公开(公告)日：2009-10-08
申请号：US12189335
申请日：2008-08-11
申请人： Junichi Horie
发明人： Junichi Horie
IPC分类号： H01L21/311
CPC分类号： H01L22/12 , H01L22/26
摘要： A method of forming a thin film including a first portion having a first film thickness and a second portion having a second film thickness thinner than the first film thickness. A thin film having the first film thickness is formed on a substrate, an interference waveform upon film formation from reflected light by irradiating with laser light is acquired, the second portion of the thin film is etched, an interference waveform upon etching is acquired by irradiating, with laser light, the second portion, and calculating an interference waveform upon target etching on condition that the second portion has the second film thickness, based on the interference waveform upon film formation. The etching is stopped when the interference waveform upon etching becomes the same as the interference waveform upon target etching.
摘要翻译：一种形成薄膜的方法，所述薄膜包括具有第一薄膜厚度的第一部分和具有比第一薄膜厚度薄的第二薄膜厚度的第二部分。在基板上形成具有第一膜厚度的薄膜，通过照射激光获得反射光成膜时的干涉波形，蚀刻第二部分薄膜，通过照射获得蚀刻时的干涉波形基于成膜时的干涉波形，在第二部分具有第二膜厚的条件下，利用激光照射第二部分，并且在目标蚀刻时计算干涉波形。当蚀刻时的干涉波形与目标蚀刻时的干涉波形相同时，停止蚀刻。

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