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1. 发明授权

US06167761A Capacitance type pressure sensor with capacitive elements actuated by a diaphragm 失效
标题翻译：电容型压力传感器，其电容元件由隔膜驱动
公开(公告)号：US06167761A
公开(公告)日：2001-01-02
申请号：US09103612
申请日：1998-06-24
申请人： Keiji Hanzawa , Akio Yasukawa , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Masahiro Matsumoto , Atsushi Miyazaki , Norio Ichikawa , Junichi Horie , Seiji Kuryu
发明人： Keiji Hanzawa , Akio Yasukawa , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Masahiro Matsumoto , Atsushi Miyazaki , Norio Ichikawa , Junichi Horie , Seiji Kuryu
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： In a capacitance type pressure sensor, a diaphragm is formed of a fragile material using an impurity-diffused monocrystal silicon and constitutes a stable pressure-responsive structure which does not undergo a plastic deformation. Between the diaphragm and a movable electrode is formed an oxide film to diminish stray capacitance between the movable electrode and a substrate and also between the movable electrode and a impurity-diffused layer. The oxide film and the movable electrode are each divided into plural regions so that the divided regions of the movable electrode are formed on the divided regions of the oxide film, thereby diminishing stress strain induced by a difference in therm expansion coefficient among the diaphragm, oxide film and movable electrode. The upper surface of a fixed electrode is covered with a structure for the fixed electrode which structure is formed by an insulating polycrystal silicon film not doped with impurity whereby the rigidity of the electrode is enhanced and it is possible to diminish a leak current.
摘要翻译：在电容式压力传感器中，使用杂质扩散的单晶硅由脆性材料形成隔膜，构成不发生塑性变形的稳定的压力响应结构。在隔膜和可动电极之间形成氧化膜，以减小可动电极和基板之间以及可移动电极和杂质扩散层之间的杂散电容。氧化物膜和可动电极分别分成多个区域，使得可动电极的分割区域形成在氧化膜的分割区域上，从而减小由隔膜，氧化物中的热膨胀系数差引起的应力应变薄膜和可动电极。固定电极的上表面被固定电极的结构覆盖，该结构由不掺杂杂质的绝缘多晶硅膜形成，由此电极的刚性增强并且可以减小漏电流。

2. 发明授权

US06877383B2 Capacitive type pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06877383B2
公开(公告)日：2005-04-12
申请号：US10247637
申请日：2002-09-20
申请人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
发明人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
IPC分类号： G01L9/00 , G01L9/12
CPC分类号： G01L9/0073
摘要： By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 μm, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
摘要翻译：通过以较少的工艺密封隔膜，降低成本，减少由于剩余应力引起的变形，提出了一种稳定可靠的压力传感器结构。压力传感器测量误差小，浮动电容和漏电流小，特性好。作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜密封多晶硅隔膜，然后完全覆盖。隔膜被放置在半导体衬底的表面上，具有0.15-1.3μm的几乎恒定的间隙，并且由于剩余应力而具有变形减小装置的不同级别的构造。

3. 发明授权

US6051853A Semiconductor pressure sensor including reference capacitor on the same substrate 失效
标题翻译：半导体压力传感器包括在同一基板上的参考电容
公开(公告)号：US6051853A
公开(公告)日：2000-04-18
申请号：US943205
申请日：1997-10-03
申请人： Satoshi Shimada , Akihiko Saito , Masahiro Matsumoto , Seikou Suzuki , Terumi Nakazawa , Atsushi Miyazaki , Norio Ichikawa , Keiji Hanzawa
发明人： Satoshi Shimada , Akihiko Saito , Masahiro Matsumoto , Seikou Suzuki , Terumi Nakazawa , Atsushi Miyazaki , Norio Ichikawa , Keiji Hanzawa
IPC分类号： G01L9/00 , G01L19/04 , H01G7/00
CPC分类号： G01L9/0073 , G01L9/0042 , G01L9/125
摘要： A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing electrostatic capacitances each have a diaphragm, which may have a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than the central portion.
摘要翻译：利用静电电容的半导体压力传感器具有形成在硅芯片一侧的多个压力感测静电电容和基准静电电容。作为可动电极，压力感测静电电容各自具有隔膜，该膜片可以具有由其中心区域构成的位移部分和比中心部分更易变形的周边部分。

4. 发明申请

US20060239063A1 Sensor adjusting circuit 有权
标题翻译：传感器调节电路
公开(公告)号：US20060239063A1
公开(公告)日：2006-10-26
申请号：US11430975
申请日：2006-05-10
申请人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
发明人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
IPC分类号： G11C11/00
CPC分类号： G01D3/022 , G01D3/02
摘要： A sensor adjusting circuit for adjusting a digital sensor, whose circuit scale is small and which can maintain high accuracy in a wide adjustment range is provided. A sensor adjusting circuit for adjusting an analog input signal inputted from a sensor and outputting it as another analog output signal in accordance with a physical quantity to be sensed, comprises: a first analog-to-digital converter having an analog integrator (2) for integrating the analog input signal, a comparator (3) for comparing an output of the analog integrator with a predetermined value, and a D/A converter (7) for outputting an output of the comparator as the input signal; and a second digital-to-analog converter (5) for converting the output of the comparator and outputting it as the analog output signal.
摘要翻译：提供了一种用于调整数字传感器的传感器调节电路，其电路规模小并且可以在宽的调节范围内保持高精度。一种传感器调节电路，用于调节从传感器输入的模拟输入信号，并根据要感测的物理量将其输出为另一个模拟输出信号，包括：第一模数转换器，具有模拟积分器（2），用于积分模拟输入信号，比较器（3），用于将模拟积分器的输出与预定值进行比较;以及D / A转换器（7），用于输出比较器的输出作为输入信号; 以及用于转换比较器的输出并将其作为模拟输出信号输出的第二数模转换器（5）。

5. 发明授权

US06188340B1 Sensor adjusting circuit 有权
标题翻译：传感器调节电路
公开(公告)号：US06188340B1
公开(公告)日：2001-02-13
申请号：US09167984
申请日：1998-10-08
申请人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
发明人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
IPC分类号： H03M100
CPC分类号： G01D3/022 , G01D3/02
摘要： A sensor adjusting circuit for adjusting a digital sensor, whose circuit scale is small and which can maintain high accuracy in a wide adjustment range is provided. A sensor adjusting circuit for adjusting an analog input signal inputted from a sensor and outputting it as another analog output signal in accordance with a physical quantity to be sensed, comprises: a first analog-to-digital converter having an analog integrator (2) for integrating the analog input signal, a comparator (3) for comparing an output of the analog integrator with a predetermined value, and a D/A converter (7) for outputting an output of the comparator as the input signal; and a second digital-to-analog converter (5) for converting the output of the comparator and outputting it as the analog output signal.
摘要翻译：提供了一种用于调整数字传感器的传感器调节电路，其电路规模小并且可以在宽的调节范围内保持高精度。一种传感器调节电路，用于调节从传感器输入的模拟输入信号，并根据要感测的物理量将其输出为另一个模拟输出信号，包括：第一模数转换器，具有模拟积分器（2），用于积分模拟输入信号，比较器（3），用于将模拟积分器的输出与预定值进行比较;以及D / A转换器（7），用于输出比较器的输出作为输入信号; 以及用于转换比较器的输出并将其作为模拟输出信号输出的第二数模转换器（5）。

6. 发明授权

US07426154B2 Sensor adjusting circuit 有权
标题翻译：传感器调节电路
公开(公告)号：US07426154B2
公开(公告)日：2008-09-16
申请号：US11430975
申请日：2006-05-10
申请人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
发明人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
IPC分类号： G11C8/00 , G06F9/46
CPC分类号： G01D3/022 , G01D3/02
摘要： A sensor adjusting circuit for adjusting a digital sensor, whose circuit scale is small and which can maintain high accuracy in a wide adjustment range is provided. A sensor adjusting circuit for adjusting an analog input signal inputted from a sensor and outputting it as another analog output signal in accordance with a physical quantity to be sensed, comprises: a first analog-to-digital converter having an analog integrator (2) for integrating the analog input signal, a comparator (3) for comparing an output of the analog integrator with a predetermined value, and a D/A converter (7) for outputting an output of the comparator as the input signal; and a second digital-to-analog converter (5) for converting the output of the comparator and outputting it as the analog output signal.
摘要翻译：提供了一种用于调整数字传感器的传感器调节电路，其电路规模小并且可以在宽的调节范围内保持高精度。一种传感器调节电路，用于调节从传感器输入的模拟输入信号，并根据要感测的物理量将其输出为另一个模拟输出信号，包括：第一模数转换器，具有模拟积分器（2），用于积分模拟输入信号，比较器（3），用于将模拟积分器的输出与预定值进行比较;以及D / A转换器（7），用于输出比较器的输出作为输入信号; 以及用于转换比较器的输出并将其作为模拟输出信号输出的第二数模转换器（5）。

7. 发明授权

US06564643B1 Capacitive pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06564643B1
公开(公告)日：2003-05-20
申请号：US09807325
申请日：2001-04-12
申请人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
发明人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.
摘要翻译：一种消除参考电容器和半导体衬底之间的寄生电容的高精度高稳定性电容式压力传感器。一种电容式压力传感器，包括在半导体衬底10上的电容随着周围压力变化而变化的有源电容器100，其电容量不会随周围压力变化而变化不大的参考电容器200以及电连接到所述有源和参考电容器100和200都检测其差异或比例，并且使用半导体衬底的电位，其中所述参考电容器的电极30a形成在半导体衬底10上，其间具有电介质20。

8. 发明授权

US06892582B1 Semiconductor pressure sensor and pressure sensing device 失效
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US06892582B1
公开(公告)日：2005-05-17
申请号：US09936480
申请日：1999-08-20
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film.This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过CVD技术等沉积氧化硅膜，从而密封蚀刻通道。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

9. 发明申请

US20050132814A1 Semiconductor pressure sensor and pressure sensing device 审中-公开
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US20050132814A1
公开(公告)日：2005-06-23
申请号：US11049872
申请日：2005-02-04
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, there by sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供了一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过密封蚀刻通道，通过CVD技术等沉积氧化硅膜。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

10. 发明授权

US06631645B1 Semiconductor pressure sensor utilizing capacitance change 失效
标题翻译：半导体压力传感器利用电容变化
公开(公告)号：US06631645B1
公开(公告)日：2003-10-14
申请号：US09653165
申请日：2000-09-01
申请人： Shinya Satou , Keiji Hanzawa , Satoshi Shimada , Naohiro Monma , Atsushi Miyazaki
发明人： Shinya Satou , Keiji Hanzawa , Satoshi Shimada , Naohiro Monma , Atsushi Miyazaki
IPC分类号： G01L912
CPC分类号： G01L9/0073 , G01L9/125
摘要： An S/N ratio of an output of a semiconductor pressure sensor is improved, the sensor being of an electrostatic capacitance type pressure sensor for generating an output based upon a ratio between capacitances of a pressure sensitive capacitance element and a reference capacitance element. This semiconductor pressure sensor has: a pressure sensitive capacitance element having an electrostatic capacitance Cs changing with a pressure to be detected; a reference capacitance element having an electrostatic capacitance Cr not changing with the pressure; and a unit for detecting the pressure by outputting a signal corresponding to a ratio between the capacitances Cs and Cr, wherein an initial value Cr0 of the capacitance Cr and an initial value Cs0 of the capacitance Cs are defined by 1.2
摘要翻译：提高半导体压力传感器的输出的S / N比，该传感器是用于根据压敏电容元件的电容与参考电容元件之间的比率产生输出的静电电容式压力传感器。该半导体压力传感器具有：静电电容Cs随着要检测的压力而变化的压敏电容元件; 具有不随压力变化的静电电容Cr的参考电容元件; 以及用于通过输出对应于电容Cs和Cr之间的比率的信号来检测压力的单元，其中电容Cr的初始值Cr 0 和初始值Cs 电容Cs的 0 由1.2 0 / Cs 0 <1.8。通过改变两个元件的电极面积等来调节CR 0 / Cs 0 的比例。以这种方式，可以获得较大的压力表输出DeltaV，降低放大器的放大系数，并提供传感器的高精度。

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