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1. 发明授权

US06877383B2 Capacitive type pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06877383B2
公开(公告)日：2005-04-12
申请号：US10247637
申请日：2002-09-20
申请人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
发明人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
IPC分类号： G01L9/00 , G01L9/12
CPC分类号： G01L9/0073
摘要： By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 μm, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
摘要翻译：通过以较少的工艺密封隔膜，降低成本，减少由于剩余应力引起的变形，提出了一种稳定可靠的压力传感器结构。压力传感器测量误差小，浮动电容和漏电流小，特性好。作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜密封多晶硅隔膜，然后完全覆盖。隔膜被放置在半导体衬底的表面上，具有0.15-1.3μm的几乎恒定的间隙，并且由于剩余应力而具有变形减小装置的不同级别的构造。

2. 发明授权

US06377056B1 Electrostatic capacitance type dynamical quantity sensor 有权
标题翻译：静电电容型动力传感器
公开(公告)号：US06377056B1
公开(公告)日：2002-04-23
申请号：US09384289
申请日：1999-08-26
申请人： Keiji Hanzawa , Masahiro Matsumoto , Satoshi Shimada , Akihiko Saito , Yasuo Onose , Norio Ichikawa , Junichi Horie , Seiji Kuryu
发明人： Keiji Hanzawa , Masahiro Matsumoto , Satoshi Shimada , Akihiko Saito , Yasuo Onose , Norio Ichikawa , Junichi Horie , Seiji Kuryu
IPC分类号： G01R2726
CPC分类号： G01P15/125 , G01D5/24 , G01L9/0073 , G01L9/12
摘要： Dynamic quantitative displacement is converted stably and straight into voltage (D.C. output) by using a high speed detection driving frequency without restricting a response of an operational amplifier. When a dynamic quantity detection electrostatic capacitance changes according to a dynamic quantity, electric charges stored in this element and in a reference electrostatic capacitance become unbalanced to produce a difference value, and an output of an operational amplifier changes according to the difference in electric charge quantity. However, the output becomes finally stable when the electric charges in the dynamic quantity detection electrostatic capacitance and in the reference electrostatic capacitance become equal. The output is proportional to a reciprocal of the dynamic quantity detection electrostatic capacitance and it is a D.C. voltage. Further, output without depending on integration feedback capacitance (feedback condenser) CF can be obtained.
摘要翻译：通过使用高速检测驱动频率将动态定量位移稳定地转换成电压（直流输出），而不限制运算放大器的响应。当动态量检测静电电容根据动态量而变化时，存储在该元件中的电荷和参考静电电容变得不均衡以产生差值，并且运算放大器的输出根据电荷量的差异而变化。然而，当动态量检测静电电容和参考静电电容中的电荷变得相等时，输出最终稳定。输出与动态量检测静电电容的倒数成比例，为直流电压。此外，可以获得不依赖积分反馈电容（反馈电容器）CF的输出。

3. 发明授权

US06941815B2 Sensor with built-in circuits and pressure detector using the same 失效
标题翻译：传感器内置电路和压力检测器使用相同
公开(公告)号：US06941815B2
公开(公告)日：2005-09-13
申请号：US10173732
申请日：2002-06-19
申请人： Yasuo Onose , Junichi Horie , Seiji Kuryu , Akihiko Saito , Norio Ichikawa , Atsuo Watanabe , Satoshi Shimada
发明人： Yasuo Onose , Junichi Horie , Seiji Kuryu , Akihiko Saito , Norio Ichikawa , Atsuo Watanabe , Satoshi Shimada
IPC分类号： G01L9/00 , H01L29/84 , G01L9/04
CPC分类号： G01L9/0073 , G01L9/0042
摘要： A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.
摘要翻译：具有内置电路的传感器可以提高操作的稳定性或特性。电路区域和传感器区域被钝化膜覆盖。传感器区域被钝化膜部分覆盖。传感器区域和电路区域被钝化膜保护，并且可以减轻钝化膜对隔膜部分的机械位移的影响，使得具有内置电路的传感器可以在操作的稳定性方面得到改善，或者特点

4. 发明授权

US06564643B1 Capacitive pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06564643B1
公开(公告)日：2003-05-20
申请号：US09807325
申请日：2001-04-12
申请人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
发明人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.
摘要翻译：一种消除参考电容器和半导体衬底之间的寄生电容的高精度高稳定性电容式压力传感器。一种电容式压力传感器，包括在半导体衬底10上的电容随着周围压力变化而变化的有源电容器100，其电容量不会随周围压力变化而变化不大的参考电容器200以及电连接到所述有源和参考电容器100和200都检测其差异或比例，并且使用半导体衬底的电位，其中所述参考电容器的电极30a形成在半导体衬底10上，其间具有电介质20。

5. 发明授权

US06892582B1 Semiconductor pressure sensor and pressure sensing device 失效
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US06892582B1
公开(公告)日：2005-05-17
申请号：US09936480
申请日：1999-08-20
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film.This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过CVD技术等沉积氧化硅膜，从而密封蚀刻通道。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

6. 发明申请

US20050132814A1 Semiconductor pressure sensor and pressure sensing device 审中-公开
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US20050132814A1
公开(公告)日：2005-06-23
申请号：US11049872
申请日：2005-02-04
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, there by sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供了一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过密封蚀刻通道，通过CVD技术等沉积氧化硅膜。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

7. 发明授权

US06640642B1 Capacitance-type pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06640642B1
公开(公告)日：2003-11-04
申请号：US09653808
申请日：2000-09-01
申请人： Yasuo Onose , Atsuo Watanabe , Seiji Kuryu , Shinya Satou , Junichi Horie , Satoshi Shimada
发明人： Yasuo Onose , Atsuo Watanabe , Seiji Kuryu , Shinya Satou , Junichi Horie , Satoshi Shimada
IPC分类号： G01L912
CPC分类号： G01L9/0042 , G01L1/146 , G01L9/0073
摘要： A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.
摘要翻译：一种电容式压力传感器，其包括彼此并联连接的多个压力传感器单元，每个压力传感器单元通过电极形成在基板上，空腔区域和具有导电膜的隔膜，所述导电膜设置成与电极相对设置其中腔区插入在电极和隔膜之间，其中隔膜固定部分设置在空腔区域的内部，使得隔膜的单片分别地分区地分配到多个压力传感器单元的区域。利用电容型压力传感器的这种结构，电容检测的无效区域被最小化，因此可以随着传感器的检测精度提高而降低寄生电容。

8. 发明申请

US20110072897A1 Heating Resistance Type Air Flow Rate Measuring Device 审中-公开
标题翻译：加热电阻型空气流量测量装置
公开(公告)号：US20110072897A1
公开(公告)日：2011-03-31
申请号：US12829105
申请日：2010-07-01
申请人： Rintaro MINAMITANI , Keiji Hanzawa , Akio Yasukawa , Yasuo Onose
发明人： Rintaro MINAMITANI , Keiji Hanzawa , Akio Yasukawa , Yasuo Onose
IPC分类号： G01F1/692
CPC分类号： G01F1/692 , G01F1/6845 , G01F15/006 , G01F15/12
摘要： A temperature of the heating resistor is set at a temperature equal to or higher than a temperature, at which liquid droplets contacting a surface of the heating resistor evaporate and disappear by film boiling. Alternatively, when a heating resistance type air flow rate measuring device starts to operate or stops operating, the temperature of the heating resistor may be set at a temperature equal to or higher than the temperature, at which liquid droplets contacting a surface of the heating resistor evaporate and disappear by film boiling. Moreover, a water-repellent and oil-repellent protective coating may be provided on the surface of the heating resistor.
摘要翻译：加热电阻器的温度被设定为等于或高于与加热电阻器的表面接触的液滴蒸发并通过薄膜沸腾而消失的温度。或者，当加热电阻型空气流量测量装置开始运行或停止运行时，加热电阻器的温度可以设定在等于或高于液滴接触加热电阻器的表面的温度通过薄膜沸腾蒸发并消失。此外，可以在加热电阻器的表面上设置防水和防油涂层。

9. 发明申请

US20140284753A1 Thermal Air Flow Sensor 有权
标题翻译：热空气流量传感器
公开(公告)号：US20140284753A1
公开(公告)日：2014-09-25
申请号：US14355104
申请日：2011-11-28
申请人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
发明人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
IPC分类号： G01F1/69
CPC分类号： G01F1/69 , G01F1/692
摘要： A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.
摘要翻译：提供了产生较少测量误差的热空气流量传感器。热空气流量传感器包括：半导体衬底; 加热电阻器，电阻温度检测器和包括氧化硅膜的电绝缘体，其中在半导体衬底上形成有加热电阻器，电阻温度检测器和电绝缘体; 以及通过去除半导体衬底的一部分而形成的膜片部分。加热电阻器和电阻温度检测器形成在隔膜部分上。热空气流量传感器还包括形成为加热电阻器上方的电绝缘体的电阻温度检测器的氮化硅膜。氮化硅膜具有符合加热电阻器和电阻温度检测器的图案的步骤。氮化硅膜具有多层结构。

10. 发明授权

US09766106B2 Thermal air flow sensor 有权
公开(公告)号：US09766106B2
公开(公告)日：2017-09-19
申请号：US14355104
申请日：2011-11-28
申请人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
发明人： Norio Ishitsuka , Keiji Hanzawa , Yasuo Onose , Noriyuki Sakuma
IPC分类号： G01F1/692 , G01F1/69
CPC分类号： G01F1/69 , G01F1/692
摘要： A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.

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