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    • 1. 发明授权
    • Lubricating structure of hydraulic clutch
    • 液压离合器润滑结构
    • US06779642B2
    • 2004-08-24
    • US10320470
    • 2002-12-17
    • Yasunori AraiYoichiro YamamotoMasaki InoueKeiichi TakahashiYuji Yamamoto
    • Yasunori AraiYoichiro YamamotoMasaki InoueKeiichi TakahashiYuji Yamamoto
    • F16D2512
    • F16D25/123F16D25/12
    • A lubricating structure of a hydraulic clutch including a drum-shaped clutch housing connected to an input shaft, and a clutch hub connected to an output shaft coaxial with the input shaft. The clutch hub has a cylindrical portion and a flange formed integrally with the cylindrical portion near one end of the cylindrical portion. The lubricating structure of the hydraulic clutch further includes a clutch piston for making pressure contact of first and second clutch plates respectively mounded to the clutch housing and the clutch hub and a hydraulic pump provided on the opposite side of the first and second clutch plates with respect to the clutch piston. The cylindrical portion of the clutch hub is formed with a plurality of first lubricating oil passages passing through the cylindrical portion, and the flange of the clutch hub is formed with a plurality of second lubricating oil passages passing through the flange.
    • 液压离合器的润滑结构,包括连接到输入轴的鼓形离合器壳体和连接到与输入轴同轴的输出轴的离合器毂。 离合器毂具有与圆柱形部分的一端附近的圆柱形部分一体形成的圆柱形部分和凸缘。 液压离合器的润滑结构还包括离合器活塞,其用于分别与离合器壳体和离合器轮毂相连的第一和第二离合器片的压力接触;以及液压泵,其设置在第一和第二离合器片的相对侧, 到离合器活塞。 离合器毂的圆筒部形成有多个通过圆筒部的第一润滑油通路,离合器毂的凸缘形成有多个通过凸缘的第二润滑油通路。
    • 4. 发明授权
    • Material gas concentration control system
    • 物质气体浓度控制系统
    • US08800589B2
    • 2014-08-12
    • US12609965
    • 2009-10-30
    • Masakazu MinamiMasaki Inoue
    • Masakazu MinamiMasaki Inoue
    • C23C16/448G05D11/13C30B25/14
    • G05D11/139C23C16/4482C30B25/14Y10T137/2499Y10T137/2509
    • An object of this invention is to provide a responsive material gas concentration control system that can be mounted on a bubbling system and that can control a concentration of a material gas in a mixed gas at a constant value even though a partial pressure of the material gas fluctuates. The material gas concentration control system is used for a material evaporation system, and comprises a body that is connected to an outlet line and that has an internal flow channel for flowing the mixed gas, a concentration measuring part that measures the concentration of the material gas in the mixed gas, and a first valve that is arranged downstream of the concentration measuring part and that adjusts the measured concentration measured by the concentration measuring part at a previously determined set concentration, wherein the concentration measuring part and the first valve are mounted on the body.
    • 本发明的目的是提供一种响应性材料气体浓度控制系统,其可以安装在鼓泡系统上,并且即使材料气体的分压也可以将混合气体中的原料气体的浓度控制在恒定值 波动 材料气体浓度控制系统用于材料蒸发系统,并且包括连接到出口管线并具有用于使混合气体流动的内部流动通道的主体,测量材料气体浓度的浓度测量部件 在所述混合气体中配置有第一阀,所述第一阀配置在所述浓度测定部的下游,并且以预先设定的浓度调整由所述浓度测定部测定的测定浓度,其中,所述浓度测定部和所述第一阀安装在 身体。
    • 7. 发明授权
    • Flowmeter for measuring a flow rate using a heat exchange principle
    • 使用热交换原理测量流量的流量计
    • US08015870B2
    • 2011-09-13
    • US12524158
    • 2008-01-21
    • Masaki InoueHidetaka Yada
    • Masaki InoueHidetaka Yada
    • G01F1/68
    • G01F1/6847G01F1/6888
    • Provided is a flowmeter with a flow tube through which fluid flows; a cooling apparatus adapted to cool a part of the flow tube; a first temperature detecting section for detecting the temperature of the flow tube cooled by the cooling apparatus; a second temperature detecting section for detecting the temperature of the cooling apparatus; a third temperature detecting section for detecting the temperature of a non-cooling area upstream of a cooling area in the flow tube; and an information processing section, which controls the cooling apparatus make a difference between the temperature detected by the second temperature detecting section and the temperature detected by the third temperature detecting section to be a prescribed value, and calculates the flow rate of the fluid flowing in the flow tube.
    • 提供一种具有流体管的流量计,流体流过该流量计; 适于冷却所述流管的一部分的冷却装置; 第一温度检测部,用于检测由冷却装置冷却的流管的温度; 第二温度检测部,用于检测冷却装置的温度; 第三温度检测部分,用于检测流管中冷却区域上游的非冷却区域的温度; 以及信息处理部,其控制所述冷却装置使由所述第二温度检测部检测出的温度与由所述第三温度检测部检测出的温度之间的差为规定值,并且计算流过的流体的流量 流管。
    • 8. 发明申请
    • SURFACTANT COMPOSITION
    • 表面活性剂组合物
    • US20110212880A1
    • 2011-09-01
    • US13128195
    • 2009-12-24
    • Masaki InoueYasuhiro Doi
    • Masaki InoueYasuhiro Doi
    • C11D3/60C11D3/20C11D3/04
    • A61Q19/10A61K8/345A61K8/39A61K8/463C11D1/146C11D1/29C11D1/72C11D1/83C11D3/0094
    • Provided is a surfactant composition having excellent fluidity after long-term storage at a low temperature (5° C.) and excellent foamability when diluted.The surfactant composition containing the following components (A), (B) and (C), wherein the content of the component (A) is 40 to 75 wt. %, (A) a sulfate surfactant represented by the following general formula (1): R1O—(PO)m(EO)nSO3M   (1), wherein R1 represents a hydrocarbon group having 8 to 18 carbon atoms; PO represents a propyleneoxy group; EO represents an ethyleneoxy group; m and n represent an average mole number of added PO and EO, respectively, are the same as or different from each other, and independently represent a number within the ranges of 0
    • 本发明提供一种表面活性剂组合物,其在低温(5℃)下长期保存后的流动性优异,稀释后的起泡性优异。 含有下列组分(A),(B)和(C)的表面活性剂组合物,其中组分(A)的含量为40-75wt。 %,(A)由以下通式(1)表示的硫酸盐表面活性剂:R1O-(PO)m(EO)nSO3M(1),其中R1表示碳原子数为8〜18的烃基; PO表示丙烯氧基; EO表示乙烯氧基; m和n分别表示添加的PO和EO的平均摩尔数彼此相同或不同,并且独立地表示0
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE THAT INCLUDES LDMOS TRANSISTOR AND MANUFACTURING METHOD THEREOF
    • 半导体器件包括LDMOS晶体管及其制造方法
    • US20100187606A1
    • 2010-07-29
    • US12690766
    • 2010-01-20
    • Yasushi KOBAYASHIMasaki InoueKohei Miyagawa
    • Yasushi KOBAYASHIMasaki InoueKohei Miyagawa
    • H01L29/78H01L21/336H01L21/8238
    • H01L21/823857H01L21/26586H01L21/823814H01L29/42368H01L29/7816
    • A manufacturing method of a semiconductor device including an LDMOS transistor includes: a process (a) of forming a first conductive well diffusion layer in the semiconductor substrate; a process (b) of sequentially forming a gate insulator film, a gate conductive film, and a photoresist film on a region on the semiconductor substrate corresponding to the well diffusion layer; a process (c) of performing photolithography to remove a part of the photoresist film formed in a predetermined region, and etching the gate conductive film using a remaining part of the photoresist film as a mask so as to form an opening in the predetermined region; a process (d) of doping second conductive impurity ions using a remaining part of the gate conductive film and the remaining part of the photoresist film as a mask so as to form the body layer; and a process (e) of removing the remaining part of the gate conductive film except a part corresponding to the gate electrode formed based on a part that constitutes a lateral surface of the gate conductive film facing the opening.
    • 包括LDMOS晶体管的半导体器件的制造方法包括:在半导体衬底中形成第一导电阱扩散层的工艺(a); 在对应于阱扩散层的半导体衬底上的区域上依次形成栅极绝缘膜,栅极导电膜和光刻胶膜的工艺(b) 进行光刻以去除在预定区域中形成的光致抗蚀剂膜的一部分的工艺(c),并且使用剩余部分的光致抗蚀剂膜作为掩模蚀刻栅极导电膜,以便在预定区域中形成开口; 使用栅极导电膜的剩余部分和光刻胶膜的剩余部分作为掩模来掺杂第二导电杂质离子以形成体层的工艺(d); 以及除了基于构成面对该开口的栅极导电膜的侧面的部分形成的栅极电极以外的部分除去栅极导电膜的剩余部分的工序(e)。