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1. 发明申请

US20130029494A1 PLASMA ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PLASMA ETCHING DEVICE 有权
标题翻译：等离子体蚀刻方法，生产半导体器件的方法和等离子体蚀刻器件
公开(公告)号：US20130029494A1
公开(公告)日：2013-01-31
申请号：US13582523
申请日：2011-03-03
申请人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
发明人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32238 , H01L29/6653 , H01L29/6659 , H01L29/66795 , H01L29/7833
摘要： Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.
摘要翻译：提供了提高氮化硅膜相对于用作基底的氧化硅膜或硅的选择性的等离子体蚀刻方法。在等离子体蚀刻方法中，通过在将处理气体供应到处理容器中的同时排出处理气体而将处理容器中的压力设定为预定水平，通过向处理容器供给外部能量来产生等离子体，并且设定施加到保持将处理容器中的基板保持为预定值，以相对于硅和/或氧化硅膜选择性地蚀刻氮化硅膜，处理气体包括等离子体激发气体，CH x F y气体和至少一种选择的氧化气体来自由O 2，CO 2，CO组成的组和氧化气体相对于CH x F y气体的流量设定为4/9以上。

2. 发明授权

US09324572B2 Plasma etching method, method for producing semiconductor device, and plasma etching device 有权
标题翻译：等离子体蚀刻方法，半导体装置的制造方法以及等离子体蚀刻装置
公开(公告)号：US09324572B2
公开(公告)日：2016-04-26
申请号：US13582523
申请日：2011-03-03
申请人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
发明人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
IPC分类号： H01L21/461 , H01L21/311 , H01J37/32 , H01L29/66 , H01L29/78
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32238 , H01L29/6653 , H01L29/6659 , H01L29/66795 , H01L29/7833
摘要： Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.
摘要翻译：提供了提高氮化硅膜相对于用作基底的氧化硅膜或硅的选择性的等离子体蚀刻方法。在等离子体蚀刻方法中，通过在将处理气体供应到处理容器中的同时排出处理气体而将处理容器中的压力设定为预定水平，通过向处理容器供给外部能量来产生等离子体，并且设定施加到保持将处理容器中的基板保持为预定值，以相对于硅和/或氧化硅膜选择性地蚀刻氮化硅膜，处理气体包括等离子体激发气体，CH x F y气体和至少一种选择的氧化气体来自由O 2，CO 2，CO组成的组和氧化气体相对于CH x F y气体的流量设定为4/9以上。

3. 发明授权

US09456600B2 Agricultural chemical-spreading agent composition 有权
标题翻译：农药扩散剂组成
公开(公告)号：US09456600B2
公开(公告)日：2016-10-04
申请号：US13820357
申请日：2011-09-01
申请人： Masaki Inoue , Masatoshi Kamei
发明人： Masaki Inoue , Masatoshi Kamei
IPC分类号： A01N25/30 , A01N25/04 , A01N25/24
CPC分类号： A01N25/30 , A01N25/04 , A01N25/24 , A01N47/38 , A01N57/14 , A01N57/20
摘要： The present invention provides the agricultural chemical-spreading agent composition, containing: (A) a polysaccharide in an amount of 5 to 30% by weight; (B) a polyoxyalkylene sorbitan fatty acid ester in an amount of 5 to 40% by weight; and (C) at least one nonionic surfactant selected from polyoxyalkylene alkyl ethers, sorbitan fatty acid esters, and silicone surfactants in an amount of 5 to 40% by weight, wherein the component (A) has a viscosity of not less than 5000 mPa·s in the form of a 5% by weight aqueous solution at 25° C., and a weight ratio of contents of the component (A) to the sum of components (B) and (C), (A)/[(B)+(C)], is 10/90 to 40/60.
摘要翻译：本发明提供农药扩散剂组合物，其含有：（A）5〜30重量％的多糖; （B）5-40重量％的聚氧化烯脱水山梨醇脂肪酸酯; 和（C）至少一种选自聚氧化烯烷基醚，脱水山梨醇脂肪酸酯和硅氧烷表面活性剂的非离子表面活性剂，其量为5-40重量％，其中组分（A）的粘度不小于5000mPa·s （A）与组分（B）和（C），（A）/ [（B）的总和的含量的重量比）为5重量％）+（C）]为10/90〜40/60。

4. 发明授权

US08830538B2 Illuminating device 有权
标题翻译：照明装置
公开(公告)号：US08830538B2
公开(公告)日：2014-09-09
申请号：US12926120
申请日：2010-10-27
申请人： Masaki Inoue , Hiroshige Hata , Kiyoyuki Kabuki , Yutaka Shiozaki
发明人： Masaki Inoue , Hiroshige Hata , Kiyoyuki Kabuki , Yutaka Shiozaki
IPC分类号： H04N1/04 , H04N1/028
CPC分类号： H04N1/02815 , H04N1/02835 , H04N1/02885
摘要： A illuminating device used for an document reading apparatus that has two rod shape light guides and light emitting elements where each of the light guides has a light emitting face and two flat light reflection faces, which may have a group of minute prisms that are formed along the longitudinal direction of the faces, and where light from each light emitting element is guided in the longitudinal direction by the light guide and reflected by that faces, such that the light is emitted from the light emitting face of each light guide and a virtual plane that is vertical to a longitudinal direction of each of the two light guides has two light intensity peaks.
摘要翻译：一种用于具有两个棒状光导和文件读取装置的照明装置，其中每个光导具有发光面和两个平坦的光反射面，所述两个平面光反射面可以具有一组沿着面的纵向方向，并且来自每个发光元件的光在光线导向下被纵向引导并被该面反射，使得光从每个光导的发光面发射出来，并且虚拟平面与两个光导中的每一个的纵向方向垂直的方向具有两个光强度峰值。

5. 发明授权

US08800589B2 Material gas concentration control system 有权
标题翻译：物质气体浓度控制系统
公开(公告)号：US08800589B2
公开(公告)日：2014-08-12
申请号：US12609965
申请日：2009-10-30
申请人： Masakazu Minami , Masaki Inoue
发明人： Masakazu Minami , Masaki Inoue
IPC分类号： C23C16/448 , G05D11/13 , C30B25/14
CPC分类号： G05D11/139 , C23C16/4482 , C30B25/14 , Y10T137/2499 , Y10T137/2509
摘要： An object of this invention is to provide a responsive material gas concentration control system that can be mounted on a bubbling system and that can control a concentration of a material gas in a mixed gas at a constant value even though a partial pressure of the material gas fluctuates. The material gas concentration control system is used for a material evaporation system, and comprises a body that is connected to an outlet line and that has an internal flow channel for flowing the mixed gas, a concentration measuring part that measures the concentration of the material gas in the mixed gas, and a first valve that is arranged downstream of the concentration measuring part and that adjusts the measured concentration measured by the concentration measuring part at a previously determined set concentration, wherein the concentration measuring part and the first valve are mounted on the body.
摘要翻译：本发明的目的是提供一种响应性材料气体浓度控制系统，其可以安装在鼓泡系统上，并且即使材料气体的分压也可以将混合气体中的原料气体的浓度控制在恒定值波动材料气体浓度控制系统用于材料蒸发系统，并且包括连接到出口管线并具有用于使混合气体流动的内部流动通道的主体，测量材料气体浓度的浓度测量部件在所述混合气体中配置有第一阀，所述第一阀配置在所述浓度测定部的下游，并且以预先设定的浓度调整由所述浓度测定部测定的测定浓度，其中，所述浓度测定部和所述第一阀安装在身体。

6. 发明授权

US08188024B2 Surfactant composition 有权
标题翻译：表面活性剂组成
公开(公告)号：US08188024B2
公开(公告)日：2012-05-29
申请号：US13128195
申请日：2009-12-24
申请人： Masaki Inoue , Yasuhiro Doi
发明人： Masaki Inoue , Yasuhiro Doi
IPC分类号： C11D1/29 , C11D1/72 , C11D1/83
CPC分类号： A61Q19/10 , A61K8/345 , A61K8/39 , A61K8/463 , C11D1/146 , C11D1/29 , C11D1/72 , C11D1/83 , C11D3/0094
摘要： According to the present invention, provided is a surfactant composition having excellent fluidity after long-term storage at a low temperature (5 degrees Celsius) and excellent foamability when diluted. It is considered that the reason why the composition of the present invention has excellent fluidity after long-term storage at a low temperature (5 degrees Celsius) and excellent foamability when diluted is because the sulfate surfactant has a predetermined amount of oxypropylene groups, thereby suppressing crystallization.
摘要翻译：根据本发明，提供了在低温（5摄氏度）长期保存后具有优异的流动性，稀释时的起泡性优异的表面活性剂组合物。认为本发明的组合物在低温（5摄氏度）长期保存后具有优异的流动性，当稀释时具有优异的发泡性，因为硫酸盐表面活性剂具有预定量的氧化丙烯基，因此抑制结晶。

7. 发明授权

US08015870B2 Flowmeter for measuring a flow rate using a heat exchange principle 有权
标题翻译：使用热交换原理测量流量的流量计
公开(公告)号：US08015870B2
公开(公告)日：2011-09-13
申请号：US12524158
申请日：2008-01-21
申请人： Masaki Inoue , Hidetaka Yada
发明人： Masaki Inoue , Hidetaka Yada
IPC分类号： G01F1/68
CPC分类号： G01F1/6847 , G01F1/6888
摘要： Provided is a flowmeter with a flow tube through which fluid flows; a cooling apparatus adapted to cool a part of the flow tube; a first temperature detecting section for detecting the temperature of the flow tube cooled by the cooling apparatus; a second temperature detecting section for detecting the temperature of the cooling apparatus; a third temperature detecting section for detecting the temperature of a non-cooling area upstream of a cooling area in the flow tube; and an information processing section, which controls the cooling apparatus make a difference between the temperature detected by the second temperature detecting section and the temperature detected by the third temperature detecting section to be a prescribed value, and calculates the flow rate of the fluid flowing in the flow tube.
摘要翻译：提供一种具有流体管的流量计，流体流过该流量计; 适于冷却所述流管的一部分的冷却装置; 第一温度检测部，用于检测由冷却装置冷却的流管的温度; 第二温度检测部，用于检测冷却装置的温度; 第三温度检测部分，用于检测流管中冷却区域上游的非冷却区域的温度; 以及信息处理部，其控制所述冷却装置使由所述第二温度检测部检测出的温度与由所述第三温度检测部检测出的温度之间的差为规定值，并且计算流过的流体的流量流管。

8. 发明申请

US20110212880A1 SURFACTANT COMPOSITION 有权
标题翻译：表面活性剂组合物
公开(公告)号：US20110212880A1
公开(公告)日：2011-09-01
申请号：US13128195
申请日：2009-12-24
申请人： Masaki Inoue , Yasuhiro Doi
发明人： Masaki Inoue , Yasuhiro Doi
IPC分类号： C11D3/60 , C11D3/20 , C11D3/04
CPC分类号： A61Q19/10 , A61K8/345 , A61K8/39 , A61K8/463 , C11D1/146 , C11D1/29 , C11D1/72 , C11D1/83 , C11D3/0094
摘要： Provided is a surfactant composition having excellent fluidity after long-term storage at a low temperature (5° C.) and excellent foamability when diluted.The surfactant composition containing the following components (A), (B) and (C), wherein the content of the component (A) is 40 to 75 wt. %, (A) a sulfate surfactant represented by the following general formula (1): R1O—(PO)m(EO)nSO3M (1), wherein R1 represents a hydrocarbon group having 8 to 18 carbon atoms; PO represents a propyleneoxy group; EO represents an ethyleneoxy group; m and n represent an average mole number of added PO and EO, respectively, are the same as or different from each other, and independently represent a number within the ranges of 0
摘要翻译：本发明提供一种表面活性剂组合物，其在低温（5℃）下长期保存后的流动性优异，稀释后的起泡性优异。含有下列组分（A），（B）和（C）的表面活性剂组合物，其中组分（A）的含量为40-75wt。％，（A）由以下通式（1）表示的硫酸盐表面活性剂：R1O-（PO）m（EO）nSO3M（1），其中R1表示碳原子数为8〜18的烃基; PO表示丙烯氧基; EO表示乙烯氧基; m和n分别表示添加的PO和EO的平均摩尔数彼此相同或不同，并且独立地表示0

9. 发明申请

US20100222246A1 SKIN OR HAIR WASHING COMPOSITION 有权
标题翻译：皮肤或毛发洗涤组合物
公开(公告)号：US20100222246A1
公开(公告)日：2010-09-02
申请号：US12159105
申请日：2006-10-31
申请人： Yasuhiro Doi , Masaki Inoue
发明人： Yasuhiro Doi , Masaki Inoue
IPC分类号： A61K8/33 , A61K8/73 , A61K8/72
CPC分类号： A61Q19/10 , A61K8/39 , A61K8/44 , A61K8/447 , A61K8/463 , A61K8/4946 , A61K8/604 , A61K8/731 , A61K8/737 , A61K8/8158 , A61K8/817 , A61K2800/5426 , A61Q5/02
摘要： A skin or hair washing composition having excellent foamability and a good feeling upon use in the process from washing to after drying, is provided.A skin or hair washing composition, comprising the following components (A), (B) and (C):(A) a compound represented by formula (1): R1O-(AO)n—R2 (1) (B) a surfactant other than the component (A); and (C) a cationic polymer, wherein the weight ratio of the component (A) and the component (C), (A)/(C), is from 0.5 to 60.
摘要翻译：提供具有优异的起泡性和在从洗涤到干燥的过程中使用时的良好感觉的皮肤或洗发剂组合物。包含以下组分（A），（B）和（C）的皮肤或洗发剂组合物：（A）由式（1）表示的化合物：R1O-（AO）n -R2（1）（B）a 除了组分（A）之外的表面活性剂; 和（C）阳离子聚合物，其中组分（A）和组分（C）（A）/（C）的重量比为0.5至60。

10. 发明申请

US20100187606A1 SEMICONDUCTOR DEVICE THAT INCLUDES LDMOS TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件包括LDMOS晶体管及其制造方法
公开(公告)号：US20100187606A1
公开(公告)日：2010-07-29
申请号：US12690766
申请日：2010-01-20
申请人： Yasushi KOBAYASHI , Masaki Inoue , Kohei Miyagawa
发明人： Yasushi KOBAYASHI , Masaki Inoue , Kohei Miyagawa
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/26586 , H01L21/823814 , H01L29/42368 , H01L29/7816
摘要： A manufacturing method of a semiconductor device including an LDMOS transistor includes: a process (a) of forming a first conductive well diffusion layer in the semiconductor substrate; a process (b) of sequentially forming a gate insulator film, a gate conductive film, and a photoresist film on a region on the semiconductor substrate corresponding to the well diffusion layer; a process (c) of performing photolithography to remove a part of the photoresist film formed in a predetermined region, and etching the gate conductive film using a remaining part of the photoresist film as a mask so as to form an opening in the predetermined region; a process (d) of doping second conductive impurity ions using a remaining part of the gate conductive film and the remaining part of the photoresist film as a mask so as to form the body layer; and a process (e) of removing the remaining part of the gate conductive film except a part corresponding to the gate electrode formed based on a part that constitutes a lateral surface of the gate conductive film facing the opening.
摘要翻译：包括LDMOS晶体管的半导体器件的制造方法包括：在半导体衬底中形成第一导电阱扩散层的工艺（a）; 在对应于阱扩散层的半导体衬底上的区域上依次形成栅极绝缘膜，栅极导电膜和光刻胶膜的工艺（b）进行光刻以去除在预定区域中形成的光致抗蚀剂膜的一部分的工艺（c），并且使用剩余部分的光致抗蚀剂膜作为掩模蚀刻栅极导电膜，以便在预定区域中形成开口; 使用栅极导电膜的剩余部分和光刻胶膜的剩余部分作为掩模来掺杂第二导电杂质离子以形成体层的工艺（d）; 以及除了基于构成面对该开口的栅极导电膜的侧面的部分形成的栅极电极以外的部分除去栅极导电膜的剩余部分的工序（e）。

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